KR970011675B1 - Method of manufacturing dram capacitor - Google Patents
Method of manufacturing dram capacitor Download PDFInfo
- Publication number
- KR970011675B1 KR970011675B1 KR93030479A KR930030479A KR970011675B1 KR 970011675 B1 KR970011675 B1 KR 970011675B1 KR 93030479 A KR93030479 A KR 93030479A KR 930030479 A KR930030479 A KR 930030479A KR 970011675 B1 KR970011675 B1 KR 970011675B1
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- film
- polysilicon
- electrode
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000003990 capacitor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 5
- 229920005591 polysilicon Polymers 0.000 abstract 5
- 238000000151 deposition Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
Landscapes
- Semiconductor Memories (AREA)
Abstract
The DRAM cell manufacturing method comprises the steps of: forming multiple MOSFETs consisting of source/drain region, gate oxide and gate electrode on a silicon substrate; successively forming an isolation oxide film, a nitride film and a flattening isolation film; forming a contact hole of which source/drain region is exposed to a prescribed bit line contact region; forming a bit line where the contact hole is filled with polysilicon film; depositing polysilicon on the whole region and forming a polysilicon film by etching process using a storing electrode mask; forming a storing electrode by depositing polysilicon on the whole region and forming a polysilicon film by etching process using a storing electrode mask, which separates neighbored cells; and forming a dielectric film and plate electrode on the top of the storing electrode.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR93030479A KR970011675B1 (en) | 1993-12-28 | 1993-12-28 | Method of manufacturing dram capacitor |
| US08/365,344 US5536671A (en) | 1993-12-28 | 1994-12-28 | Method for fabricating capacitor of a semiconductor device |
| JP6327619A JP2620529B2 (en) | 1993-12-28 | 1994-12-28 | Manufacturing method of Dealam capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR93030479A KR970011675B1 (en) | 1993-12-28 | 1993-12-28 | Method of manufacturing dram capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950021630A KR950021630A (en) | 1995-07-26 |
| KR970011675B1 true KR970011675B1 (en) | 1997-07-14 |
Family
ID=19373487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR93030479A Expired - Lifetime KR970011675B1 (en) | 1993-12-28 | 1993-12-28 | Method of manufacturing dram capacitor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970011675B1 (en) |
-
1993
- 1993-12-28 KR KR93030479A patent/KR970011675B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR950021630A (en) | 1995-07-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20060920 Year of fee payment: 10 |
|
| LAPS | Lapse due to unpaid annual fee |