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KR970011051B1 - Photo lithography method of semiconductor device - Google Patents

Photo lithography method of semiconductor device Download PDF

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Publication number
KR970011051B1
KR970011051B1 KR93019784A KR930019784A KR970011051B1 KR 970011051 B1 KR970011051 B1 KR 970011051B1 KR 93019784 A KR93019784 A KR 93019784A KR 930019784 A KR930019784 A KR 930019784A KR 970011051 B1 KR970011051 B1 KR 970011051B1
Authority
KR
South Korea
Prior art keywords
photoresist
photoresist pattern
exposure
mask
allow
Prior art date
Application number
KR93019784A
Other languages
Korean (ko)
Other versions
KR950009931A (en
Inventor
Dal-Rae Ryu
Tae-Kook Lee
Chol-Kyu Bok
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR93019784A priority Critical patent/KR970011051B1/en
Publication of KR950009931A publication Critical patent/KR950009931A/en
Application granted granted Critical
Publication of KR970011051B1 publication Critical patent/KR970011051B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method of forming a photoresist pattern of a semiconductor device includes the steps of coating a first photoresist on a wafer which passed through predetermined processes, and performing the first exposure and development to the first photoresist layer using a mask to form a first photoresist pattern, coating a second photoresist having light sensing characteristic opposite to that of the first photoresist on the area between the first photoresist layer patterns, aligning the mask to allow its light shielding portion and light transmitting portion of the mask to be aligned to the wafer identically in case of the first exposure process, and carrying out the second exposure and development to the second photoresist layer to form a second photoresist pattern, the second exposure time being different from the first exposure time to allow the line width of the first photoresist pattern to be identical to the size of the light transmitting portion and to allow the line width of the second photoresist pattern to be smaller than the size of the light shielding portion.
KR93019784A 1993-09-25 1993-09-25 Photo lithography method of semiconductor device KR970011051B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93019784A KR970011051B1 (en) 1993-09-25 1993-09-25 Photo lithography method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93019784A KR970011051B1 (en) 1993-09-25 1993-09-25 Photo lithography method of semiconductor device

Publications (2)

Publication Number Publication Date
KR950009931A KR950009931A (en) 1995-04-26
KR970011051B1 true KR970011051B1 (en) 1997-07-05

Family

ID=19364633

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93019784A KR970011051B1 (en) 1993-09-25 1993-09-25 Photo lithography method of semiconductor device

Country Status (1)

Country Link
KR (1) KR970011051B1 (en)

Also Published As

Publication number Publication date
KR950009931A (en) 1995-04-26

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