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KR970006732B1 - Method of producing solid-state imaging device - Google Patents

Method of producing solid-state imaging device Download PDF

Info

Publication number
KR970006732B1
KR970006732B1 KR93009319A KR930009319A KR970006732B1 KR 970006732 B1 KR970006732 B1 KR 970006732B1 KR 93009319 A KR93009319 A KR 93009319A KR 930009319 A KR930009319 A KR 930009319A KR 970006732 B1 KR970006732 B1 KR 970006732B1
Authority
KR
South Korea
Prior art keywords
imaging device
state imaging
producing solid
producing
solid
Prior art date
Application number
KR93009319A
Other languages
Korean (ko)
Other versions
KR940006392A (en
Inventor
Shouichi Ishibe
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of KR940006392A publication Critical patent/KR940006392A/en
Application granted granted Critical
Publication of KR970006732B1 publication Critical patent/KR970006732B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1536—Frame transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
KR93009319A 1992-05-27 1993-05-27 Method of producing solid-state imaging device KR970006732B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4135379A JPH05335531A (en) 1992-05-27 1992-05-27 Solid-state imaging device
JP92-135379 1992-05-27

Publications (2)

Publication Number Publication Date
KR940006392A KR940006392A (en) 1994-03-23
KR970006732B1 true KR970006732B1 (en) 1997-04-29

Family

ID=15150337

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93009319A KR970006732B1 (en) 1992-05-27 1993-05-27 Method of producing solid-state imaging device

Country Status (5)

Country Link
US (2) US5422285A (en)
EP (1) EP0573219B1 (en)
JP (1) JPH05335531A (en)
KR (1) KR970006732B1 (en)
DE (1) DE69313024T2 (en)

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US5739548A (en) * 1995-05-02 1998-04-14 Matsushita Electronics Corporation Solid state imaging device having a flattening layer and optical lenses
JP3405620B2 (en) * 1995-05-22 2003-05-12 松下電器産業株式会社 Solid-state imaging device
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US5693967A (en) * 1995-08-10 1997-12-02 Lg Semicon Co., Ltd. Charge coupled device with microlens
KR0186195B1 (en) * 1995-12-11 1999-05-01 문정환 Color linear charge coupled device and driving method thereof
KR100223853B1 (en) * 1996-08-26 1999-10-15 구본준 Structure of solid-state image sensor and manufacturing of the same
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DE19651667C2 (en) 1996-12-12 2003-07-03 Rudolf Groskopf Device for three-dimensional examination of an object
JPH10270672A (en) * 1997-03-25 1998-10-09 Sony Corp Solid-state imaging device
DE19816309B4 (en) * 1997-04-14 2008-04-03 CiS Institut für Mikrosensorik gGmbH Method for direct mounting of silicon sensors and sensors manufactured thereafter
JPH1164608A (en) * 1997-08-26 1999-03-05 Dainippon Printing Co Ltd Lenticular lens
JP3120778B2 (en) * 1998-04-20 2000-12-25 日本電気株式会社 Solid-state imaging device, inspection method and manufacturing method thereof
KR100553672B1 (en) * 1998-09-21 2006-09-20 삼성전자주식회사 Method of fabricating solid-state color imaging device
JP2001147515A (en) * 1999-09-07 2001-05-29 Ricoh Co Ltd Method for designing photomask, apparatus for designing photomask, memory medium readable with computer, photomask, photoresist, photosensitive resin, substrate, microlens and optical element
JP4123667B2 (en) * 2000-01-26 2008-07-23 凸版印刷株式会社 Manufacturing method of solid-state imaging device
US6417022B1 (en) * 2000-04-12 2002-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method for making long focal length micro-lens for color filters
KR100477784B1 (en) * 2000-08-31 2005-03-22 매그나칩 반도체 유한회사 Image sensor having lens formed by air in trench and method for fabricating the same
JP2003197897A (en) * 2001-12-28 2003-07-11 Fuji Film Microdevices Co Ltd Semiconductor photoelectric transducer
US6969899B2 (en) * 2003-12-08 2005-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with light guides
JP4830306B2 (en) * 2004-06-23 2011-12-07 凸版印刷株式会社 Manufacturing method of solid-state imaging device
US7450161B1 (en) 2004-12-02 2008-11-11 Magnachip Semiconductor Ltd. System and method to enhance the uniformity of intensity distribution on digital imaging sensors
US7564629B1 (en) * 2004-12-02 2009-07-21 Crosstek Capital, LLC Microlens alignment procedures in CMOS image sensor design
US7763918B1 (en) * 2004-12-02 2010-07-27 Chen Feng Image pixel design to enhance the uniformity of intensity distribution on digital image sensors
KR20060077536A (en) * 2004-12-30 2006-07-05 동부일렉트로닉스 주식회사 CMOS image sensor and its manufacturing method
KR100693927B1 (en) * 2005-02-03 2007-03-12 삼성전자주식회사 Micro lens manufacturing method, micro lens array manufacturing method and image sensor manufacturing method
US7829965B2 (en) 2005-05-18 2010-11-09 International Business Machines Corporation Touching microlens structure for a pixel sensor and method of fabrication
JP2014056014A (en) * 2012-09-11 2014-03-27 Canon Inc Imaging element and imaging apparatus

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Also Published As

Publication number Publication date
DE69313024T2 (en) 1998-02-26
US5422285A (en) 1995-06-06
EP0573219A1 (en) 1993-12-08
JPH05335531A (en) 1993-12-17
KR940006392A (en) 1994-03-23
EP0573219B1 (en) 1997-08-13
US5583354A (en) 1996-12-10
DE69313024D1 (en) 1997-09-18

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