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KR970004023A - Nonvolatile memory device - Google Patents

Nonvolatile memory device Download PDF

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Publication number
KR970004023A
KR970004023A KR1019950014832A KR19950014832A KR970004023A KR 970004023 A KR970004023 A KR 970004023A KR 1019950014832 A KR1019950014832 A KR 1019950014832A KR 19950014832 A KR19950014832 A KR 19950014832A KR 970004023 A KR970004023 A KR 970004023A
Authority
KR
South Korea
Prior art keywords
memory device
nonvolatile memory
nonvolatile
memory
Prior art date
Application number
KR1019950014832A
Other languages
Korean (ko)
Other versions
KR0147646B1 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR1019950014832A priority Critical patent/KR0147646B1/en
Publication of KR970004023A publication Critical patent/KR970004023A/en
Application granted granted Critical
Publication of KR0147646B1 publication Critical patent/KR0147646B1/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0163—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
KR1019950014832A 1995-06-05 1995-06-05 Nonvolatile memory device KR0147646B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950014832A KR0147646B1 (en) 1995-06-05 1995-06-05 Nonvolatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950014832A KR0147646B1 (en) 1995-06-05 1995-06-05 Nonvolatile memory device

Publications (2)

Publication Number Publication Date
KR970004023A true KR970004023A (en) 1997-01-29
KR0147646B1 KR0147646B1 (en) 1998-08-01

Family

ID=19416530

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950014832A KR0147646B1 (en) 1995-06-05 1995-06-05 Nonvolatile memory device

Country Status (1)

Country Link
KR (1) KR0147646B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100486238B1 (en) * 1998-08-10 2005-08-01 삼성전자주식회사 Cell array unit of NOR flash memory device
KR100781982B1 (en) * 2006-11-02 2007-12-06 삼성전자주식회사 Layout Structure of Semiconductor Memory Device and Wordline Contacts

Also Published As

Publication number Publication date
KR0147646B1 (en) 1998-08-01

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