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KR970000700B1 - Negative mask forming method using laser lithography apparatus - Google Patents

Negative mask forming method using laser lithography apparatus Download PDF

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Publication number
KR970000700B1
KR970000700B1 KR93011279A KR930011279A KR970000700B1 KR 970000700 B1 KR970000700 B1 KR 970000700B1 KR 93011279 A KR93011279 A KR 93011279A KR 930011279 A KR930011279 A KR 930011279A KR 970000700 B1 KR970000700 B1 KR 970000700B1
Authority
KR
South Korea
Prior art keywords
photoresist
negative mask
laser lithography
forming method
lithography apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR93011279A
Other languages
Korean (ko)
Other versions
KR950001938A (en
Inventor
Kyung-Hyun Park
Sun-Ho Kim
Young-Tae Byun
Dong-Hwan Kim
Sang-Sam Choe
Original Assignee
Korea Inst Sci & Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Inst Sci & Tech filed Critical Korea Inst Sci & Tech
Priority to KR93011279A priority Critical patent/KR970000700B1/en
Publication of KR950001938A publication Critical patent/KR950001938A/en
Application granted granted Critical
Publication of KR970000700B1 publication Critical patent/KR970000700B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

Disclosed is negative mask manufacturing method which is essentially used for a semiconductor laser diode and a semiconductor waveguide etc. The negative mask manufacturing method comprises the steps of performing a first light exposure by using a laser lithography after performs spin coating with a photoresist(10) on a substrate coated with crom(Cr), developing after performs a second light exposure and deleting the photoresist(10) whose property is not changed, deleting the remained photoresist(10) after etching the crom in the part which the photoresist(10) is deleted. Thus, the mask manufacturing time is reduced.
KR93011279A 1993-06-19 1993-06-19 Negative mask forming method using laser lithography apparatus Expired - Lifetime KR970000700B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93011279A KR970000700B1 (en) 1993-06-19 1993-06-19 Negative mask forming method using laser lithography apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93011279A KR970000700B1 (en) 1993-06-19 1993-06-19 Negative mask forming method using laser lithography apparatus

Publications (2)

Publication Number Publication Date
KR950001938A KR950001938A (en) 1995-01-04
KR970000700B1 true KR970000700B1 (en) 1997-01-18

Family

ID=19357723

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93011279A Expired - Lifetime KR970000700B1 (en) 1993-06-19 1993-06-19 Negative mask forming method using laser lithography apparatus

Country Status (1)

Country Link
KR (1) KR970000700B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100855406B1 (en) * 2007-12-27 2008-08-29 주식회사 동부하이텍 Image sensor manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395109B1 (en) 2000-02-15 2002-05-28 Cargill, Incorporated Bar product, cylinder rods, hydraulic cylinders, and method for manufacturing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100855406B1 (en) * 2007-12-27 2008-08-29 주식회사 동부하이텍 Image sensor manufacturing method

Also Published As

Publication number Publication date
KR950001938A (en) 1995-01-04

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Legal Events

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A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
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Payment date: 19970829

Year of fee payment: 6

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