KR960702950A - 광 및 방사선 검출기 및 그 제조방법 - Google Patents
광 및 방사선 검출기 및 그 제조방법Info
- Publication number
- KR960702950A KR960702950A KR1019950705423A KR19950705423A KR960702950A KR 960702950 A KR960702950 A KR 960702950A KR 1019950705423 A KR1019950705423 A KR 1019950705423A KR 19950705423 A KR19950705423 A KR 19950705423A KR 960702950 A KR960702950 A KR 960702950A
- Authority
- KR
- South Korea
- Prior art keywords
- optical
- manufacturing
- radiation detector
- detector
- radiation
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5736894 | 1994-03-28 | ||
| PCT/JP1995/000559 WO1995026573A1 (en) | 1994-03-28 | 1995-03-27 | Semiconductor device for detecting light and radiation, and method of manufacturing the device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR960702950A true KR960702950A (ko) | 1996-05-23 |
Family
ID=13053653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950705423A KR960702950A (ko) | 1994-03-28 | 1995-11-28 | 광 및 방사선 검출기 및 그 제조방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6001667A (ko) |
| KR (1) | KR960702950A (ko) |
| CN (1) | CN1130442A (ko) |
| TW (1) | TW275717B (ko) |
| WO (1) | WO1995026573A1 (ko) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3759435B2 (ja) * | 2001-07-11 | 2006-03-22 | ソニー株式会社 | Ｘ−ｙアドレス型固体撮像素子 |
| US6737626B1 (en) * | 2001-08-06 | 2004-05-18 | Pixim, Inc. | Image sensors with underlying and lateral insulator structures |
| US20030049925A1 (en) * | 2001-09-10 | 2003-03-13 | Layman Paul Arthur | High-density inter-die interconnect structure |
| US6656761B2 (en) * | 2001-11-21 | 2003-12-02 | Motorola, Inc. | Method for forming a semiconductor device for detecting light |
| US20070210342A1 (en) * | 2003-02-26 | 2007-09-13 | Dialog Imaging Systems Gmbh | Vertical charge transfer active pixel sensor |
| US20040164321A1 (en) * | 2003-02-26 | 2004-08-26 | Dialog Semiconductor | Vertical charge transfer active pixel sensor |
| JP4247017B2 (ja) | 2003-03-10 | 2009-04-02 | 浜松ホトニクス株式会社 | 放射線検出器の製造方法 |
| US6864156B1 (en) * | 2003-04-04 | 2005-03-08 | Xilinx, Inc. | Semiconductor wafer with well contacts on back side |
| US7944012B2 (en) * | 2003-05-08 | 2011-05-17 | The Science And Technology Facilities Council | Accelerated particle and high energy radiation sensor |
| KR100561004B1 (ko) * | 2003-12-30 | 2006-03-16 | 동부아남반도체 주식회사 | 씨모스 이미지 센서 및 그 제조 방법 |
| US20080001247A1 (en) * | 2006-06-30 | 2008-01-03 | Abadeer Wagdi W | Mesa Optical Sensors and Methods of Manufacturing the Same |
| US7586108B2 (en) * | 2007-06-25 | 2009-09-08 | Asml Netherlands B.V. | Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector |
| JP2009060001A (ja) * | 2007-09-03 | 2009-03-19 | Casio Comput Co Ltd | フォトトランジスタ |
| CN102110649A (zh) * | 2009-12-28 | 2011-06-29 | 北大方正集团有限公司 | 一种改善铝栅互补金属氧化物半导体静态电流失效的方法 |
| US9006827B2 (en) * | 2011-11-09 | 2015-04-14 | International Business Machines Corporation | Radiation hardened memory cell and design structures |
| CN103137776B (zh) * | 2013-01-31 | 2015-05-27 | 西安电子科技大学 | 谐振腔式的双mos光电探测器 |
| CN106908388A (zh) * | 2017-03-16 | 2017-06-30 | 亿信标准认证集团有限公司 | 关于工厂废水排放的液体浓度标准认证检测系统 |
| DE102019206494A1 (de) | 2019-05-06 | 2020-11-12 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | DEPFET-Transistor und Verfahren zur Herstellung eines DEPFET- Transistors |
| US12154917B2 (en) * | 2020-04-10 | 2024-11-26 | Optohub Co., Ltd | Semiconductor image sensor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS505557B1 (ko) * | 1969-05-22 | 1975-03-05 | ||
| JPS5066190A (ko) * | 1973-10-11 | 1975-06-04 | ||
| JPS5336180A (en) * | 1976-09-16 | 1978-04-04 | Hitachi Ltd | Production of semiconductor device |
| JPH01238154A (ja) * | 1988-03-18 | 1989-09-22 | Canon Inc | 光電変換装置 |
| JP2617798B2 (ja) * | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
| DE4209536C3 (de) * | 1992-03-24 | 2000-10-05 | Stuttgart Mikroelektronik | Bildzelle für einen Bildaufnehmer-Chip |
| US5541122A (en) * | 1995-04-03 | 1996-07-30 | Motorola Inc. | Method of fabricating an insulated-gate bipolar transistor |
-
1995
- 1995-03-27 WO PCT/JP1995/000559 patent/WO1995026573A1/ja active Application Filing
- 1995-03-27 CN CN95190414A patent/CN1130442A/zh active Pending
- 1995-03-27 US US08/553,565 patent/US6001667A/en not_active Expired - Lifetime
- 1995-05-18 TW TW084104931A patent/TW275717B/zh not_active IP Right Cessation
- 1995-11-28 KR KR1019950705423A patent/KR960702950A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1995026573A1 (en) | 1995-10-05 |
| TW275717B (ko) | 1996-05-11 |
| CN1130442A (zh) | 1996-09-04 |
| US6001667A (en) | 1999-12-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 19951128 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |