KR960042202A - Reticle for Semiconductor Pattern Formation - Google Patents
Reticle for Semiconductor Pattern Formation Download PDFInfo
- Publication number
- KR960042202A KR960042202A KR1019950012603A KR19950012603A KR960042202A KR 960042202 A KR960042202 A KR 960042202A KR 1019950012603 A KR1019950012603 A KR 1019950012603A KR 19950012603 A KR19950012603 A KR 19950012603A KR 960042202 A KR960042202 A KR 960042202A
- Authority
- KR
- South Korea
- Prior art keywords
- reticle
- light
- semiconductor pattern
- refractive index
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract 7
- 230000007261 regionalization Effects 0.000 title claims 3
- 239000010453 quartz Substances 0.000 claims abstract 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract 4
- 239000011651 chromium Substances 0.000 claims abstract 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical group [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract 2
- 238000000206 photolithography Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
본 발명은 반도체 패턴형성용 레티클(reticle)에 관한 것으로서, 특히 포토리소그래피 공정중의 노광 공정에서 빛이 투과될 때 석영(Quartz)막과 공기 굴절율이 상이로 인한 빛의 반사 현상을 억제하여 빛의 손실을 막아 패턴 정밀도가 향상될 수 있는 반도체 패턴형성용 레티클에 관한 것으로서, 빛을 투과시키는 석영막에 빛을 투과시키지 않는 크롬이 소정의 패턴으로 형성된 반도체 패턴형성용 레티클에 있어서, 상기 석영막과 크롬 사이에 빛의 반사를 억제하도록 석영막과 공기의 굴절율 차이를 보상하는 굴절율을 가지는 보상막을 개재하여 빛의 손실을 줄여 패턴의 정밀도가 향상될 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reticle for forming a semiconductor pattern. Particularly, when light is transmitted in an exposure process during a photolithography process, the present invention suppresses reflection of light due to a difference between a quartz film and an air refractive index. The present invention relates to a semiconductor pattern forming reticle that prevents loss and improves pattern accuracy. The semiconductor pattern forming reticle in which chromium that does not transmit light is formed in a predetermined pattern in a quartz film that transmits light, wherein the quartz film and The precision of the pattern may be improved by reducing the loss of light through a compensation film having a refractive index that compensates for the difference in refractive index between the quartz film and the air so as to suppress reflection of light between chromium.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
첨부된 도면은 본 발명에 따른 레티클의 구성도.The accompanying drawings are schematic diagrams of a reticle according to the present invention.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950012603A KR960042202A (en) | 1995-05-19 | 1995-05-19 | Reticle for Semiconductor Pattern Formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950012603A KR960042202A (en) | 1995-05-19 | 1995-05-19 | Reticle for Semiconductor Pattern Formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR960042202A true KR960042202A (en) | 1996-12-21 |
Family
ID=66525318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950012603A Ceased KR960042202A (en) | 1995-05-19 | 1995-05-19 | Reticle for Semiconductor Pattern Formation |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR960042202A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100810412B1 (en) * | 2006-09-29 | 2008-03-04 | 주식회사 하이닉스반도체 | Reticle and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6327019A (en) * | 1986-07-18 | 1988-02-04 | Fujitsu Ltd | X-ray exposure mask |
| JPH03168641A (en) * | 1989-11-28 | 1991-07-22 | Fujitsu Ltd | photo mask |
| KR0153287B1 (en) * | 1990-06-21 | 1998-11-02 | 가나미야지 준 | Phase shift mask |
-
1995
- 1995-05-19 KR KR1019950012603A patent/KR960042202A/en not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6327019A (en) * | 1986-07-18 | 1988-02-04 | Fujitsu Ltd | X-ray exposure mask |
| JPH03168641A (en) * | 1989-11-28 | 1991-07-22 | Fujitsu Ltd | photo mask |
| KR0153287B1 (en) * | 1990-06-21 | 1998-11-02 | 가나미야지 준 | Phase shift mask |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100810412B1 (en) * | 2006-09-29 | 2008-03-04 | 주식회사 하이닉스반도체 | Reticle and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19950519 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20000316 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19950519 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20020531 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20020805 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20020531 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |