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KR960037874A - 망간-아연 페라이트 단결정의 제조방법 - Google Patents

망간-아연 페라이트 단결정의 제조방법 Download PDF

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KR960037874A
KR960037874A KR1019950008151A KR19950008151A KR960037874A KR 960037874 A KR960037874 A KR 960037874A KR 1019950008151 A KR1019950008151 A KR 1019950008151A KR 19950008151 A KR19950008151 A KR 19950008151A KR 960037874 A KR960037874 A KR 960037874A
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single crystal
initial raw
zinc ferrite
manganese
raw material
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KR0144614B1 (ko
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임병묵
마재용
이병우
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이형도
삼성전기 주식회사
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003Heating or cooling of the melt or the crystallised material
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007Mechanisms for moving either the charge or the heater
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides

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  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
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Abstract

본 발명은 VTR 헤드 사용되는 망간-아연 페라이트 단결정의 제조방법에 관한 것으로, 단결정 초기원료의 성장시점에 백금도가니 내에 백금관을 용액과 접하지 않도록 위치시키므로서 단결정의 초반부위에서의 가용부분이 크고 수율 또한 우수한 망간-아연 페라이트 단결정의 제조방법을 제공하고자 하는데 그 목적이 있다.
상기한 목적달성을 위한 본 발명은 종결정과 초기원료를 백금도가니에 넣어 로의 저부에 위치시키고 로의온도를 단결정의 용융온도까지 높인 후, 백금도가니를 상승시켜 종결정과 초기원료를 용융시킨 다음, 다시 하강시켜 초기원료를 성장시키고, 추가원료를 투입하여 조성을 조절하면서 망간-아연 페라이트 단결정을 제조하는 방법에 있어서, 상기 초기원료의 성장시작 시점에서 백금도가니의 내경보다 작은 직경의 백금관을 용액과 접촉되지 않도록 상면에 근접 위치시켜 초기원료의 성장종료까지 유지하는 것을 포함하여 이루어지는 망간-아연 페라이트 단결정의 제조방법을 제공함을 그 요지로 한다.

Description

망간-아연 페라이트 단결정의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 방법이 적용된 망간-아연 페라이트 단결정 제조장치의 개략도, 제2도는 본 발명의 방법이 적용된 망간-아연 페라이트 단결정 제조장치의 개략도,

Claims (2)

  1. 종결정과 초기원료을 백금도가니에 넣어 저부에 위치시키고 로의 온도를 단결정의 용융온도까지 높인 후, 백금도가니를 상승시켜 종결정과 초기원료를 용융시킨 다음, 다시 하강시켜 초기 원료를 성장시키고, 추가 원료를 투입하여 조성을 조절하면서 망간-아연 페라이트 단결정을 제조하는 방법에 있어서, 상기 초기원료의 성장시작 시점에서 백금도가니의 내경보다 작은 직경의 백금관을 용액과 접촉되지 않도록 상면에 근접 위치시켜 초기 원료의 성장종료까지 유지하는 것을 포함하여 이루어짐을 특징으로 하는 망간-아연 페라이트 단결정의 제조방법.
  2. 제1항에 있어서, 상기 백금관의 직경은 20∼25㎜인 것을 특징으로 하는 망간-아연 페라이트 단결정의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019950008151A 1995-04-07 1995-04-07 망간-아연 페라이트 단결정의 제조방법 Expired - Fee Related KR0144614B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950008151A KR0144614B1 (ko) 1995-04-07 1995-04-07 망간-아연 페라이트 단결정의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950008151A KR0144614B1 (ko) 1995-04-07 1995-04-07 망간-아연 페라이트 단결정의 제조방법

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KR960037874A true KR960037874A (ko) 1996-11-19
KR0144614B1 KR0144614B1 (ko) 1998-07-15

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KR1019950008151A Expired - Fee Related KR0144614B1 (ko) 1995-04-07 1995-04-07 망간-아연 페라이트 단결정의 제조방법

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Publication number Priority date Publication date Assignee Title
KR20170024370A (ko) 2015-08-25 2017-03-07 농업회사법인 주식회사 생생초 팽이버섯 추출물을 이용한 가바(gaba)성분 함유 유산균 발효액의 제조방법

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