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KR960036146A - α-헥사티에닐을 포함하는 아티클 - Google Patents

α-헥사티에닐을 포함하는 아티클 Download PDF

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Publication number
KR960036146A
KR960036146A KR1019960005463A KR19960005463A KR960036146A KR 960036146 A KR960036146 A KR 960036146A KR 1019960005463 A KR1019960005463 A KR 1019960005463A KR 19960005463 A KR19960005463 A KR 19960005463A KR 960036146 A KR960036146 A KR 960036146A
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KR
South Korea
Prior art keywords
article
nuclear
thienyl
phase
thin film
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Application number
KR1019960005463A
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English (en)
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KR100397243B1 (ko
Inventor
미첼 브리덴바우 폴
맥레모아 플레밍 로버트
코트 하돈 로버트
알프레드 라우디세 로버트
시그리스트 테오
Original Assignee
유겐 이. 파쳐
에이티 앤드 티 아이피엠 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 유겐 이. 파쳐, 에이티 앤드 티 아이피엠 코포레이션 filed Critical 유겐 이. 파쳐
Publication of KR960036146A publication Critical patent/KR960036146A/ko
Application granted granted Critical
Publication of KR100397243B1 publication Critical patent/KR100397243B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

α-6T/TH라 지정된 공지되지 않은 α-핵사티에닐의 페이즈는 CuK 파우더 X-레이 굴절 패턴에서 2θ=4.31, 8.64, 17.32, 26.15 및 29.08°에서의 굴절 피크를 보여주고 예를들어 박막 트랜지스터를 사용하는데 바람직한 페이즈를 제조하는 특성(예를들어, 고정공 모빌리티)를 갖는 것이 예측된다. 박막 트랜지스터 및 그외 다른 장치의 종래 유기박막을 α-6T/TH의 박막으로 대체하는 것이 고려된다.

Description

α-핵사티에닐을 포함하는 아티클
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 2도 내지 4도는 α-6T/TH에 대한 계산된 에너지 맨드 다이어그램.

Claims (7)

  1. α-핵사티에닐을 포함하는 아티클에 있어서, 상기 α-핵사티에닐양은 CuK 파우더 X-레이 굴절 패턴에서 2θ=4.31, 8.64, 17.32, 26.15 및 29.08°에서의 굴절 패턴을 보여주는 α-핵사티에닐의 페이즈로 이루어지는 것을 특징으로 하는 α-핵사티에닐을 포함하는 아티클.
  2. 제 1항에 있어서, 상기 α-핵사티에닐 페이즈는 오차 범위가 약 ±1%내인 a=0.914㎚, b=0.568㎚ 및 c=2.067㎚인 단위셀축 및 β=90°인 단사정계 각도를 지닌 단사정계 결정 대칭을 갖는 것을 특징으로 하는 α-핵사티에닐을 포함하는 아티클.
  3. 제 1항에 있어서, 상기 페이즈는 응용된 α-핵사티에닐의 부피의 적어도 일부분을 고체화하는 단계를 포함하는 공정에 의해 제조되는 것을 특징으로 하는 α-핵사티에닐을 포함하는 아티클.
  4. 제 1항에 있어서, 상기 페이즈는 295℃이상의 온도인 기판상에 α-핵사티에닐을 증착시키는 단계를 포함하는 공정에 의해 제조되는 것을 특징으로 하는 α-핵사티에닐을 포함하는 아티클.
  5. 제 1항에 있어서, 상기 양은 상기 페이즈 막을 포함하는 것을 특징으로 하는 α-핵사티에닐을 포함하는 아티클.
  6. 제 5항에 있어서, 하나 이상의 박막 트랜지스터를 포함하며, 상기 박막 트랜지스터중 소정의 하나의 박막 트랜지스터는 α-핵사티에닐의 상기 페이즈 막을 포함하는 것을 특징으로 하는 α-핵사티에닐을 포함하는 아티클.
  7. 제 6항에 있어서, 상기 아티클은 플랫 스크린 디스플레이인 것을 특징으로 하는 α-핵사티에닐을 포함하는 아티클.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960005463A 1995-03-02 1996-03-02 α-헥사티에닐을포함하는물품 KR100397243B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US393,494 1995-03-02
US08/393,494 US5659181A (en) 1995-03-02 1995-03-02 Article comprising α-hexathienyl

Publications (2)

Publication Number Publication Date
KR960036146A true KR960036146A (ko) 1996-10-28
KR100397243B1 KR100397243B1 (ko) 2004-03-04

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US (1) US5659181A (ko)
EP (1) EP0730313B1 (ko)
JP (1) JP3168245B2 (ko)
KR (1) KR100397243B1 (ko)
CA (1) CA2166752C (ko)
DE (1) DE69637892D1 (ko)
MX (1) MX9600741A (ko)
SG (1) SG50605A1 (ko)

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Also Published As

Publication number Publication date
EP0730313B1 (en) 2009-04-08
SG50605A1 (en) 1998-07-20
KR100397243B1 (ko) 2004-03-04
EP0730313A2 (en) 1996-09-04
JPH08264805A (ja) 1996-10-11
DE69637892D1 (de) 2009-05-20
CA2166752C (en) 2000-06-27
JP3168245B2 (ja) 2001-05-21
CA2166752A1 (en) 1996-09-03
MX9600741A (es) 1997-02-28
US5659181A (en) 1997-08-19
EP0730313A3 (en) 1998-03-18

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