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KR960012479A - Capacitors for Semiconductor Devices and Manufacturing Method Thereof - Google Patents

Capacitors for Semiconductor Devices and Manufacturing Method Thereof Download PDF

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Publication number
KR960012479A
KR960012479A KR1019940022305A KR19940022305A KR960012479A KR 960012479 A KR960012479 A KR 960012479A KR 1019940022305 A KR1019940022305 A KR 1019940022305A KR 19940022305 A KR19940022305 A KR 19940022305A KR 960012479 A KR960012479 A KR 960012479A
Authority
KR
South Korea
Prior art keywords
capacitor
conductive layer
semiconductor device
silicon substrate
manufacturing
Prior art date
Application number
KR1019940022305A
Other languages
Korean (ko)
Inventor
심현수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940022305A priority Critical patent/KR960012479A/en
Publication of KR960012479A publication Critical patent/KR960012479A/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 반도체 소자용 캐패서터 및 그 제조 방법에 관한 것으로, 반도체 소자의 고집적화에 따른 감소되는 단위면적당 충전용량을 증가시키기 위해 실리콘 기판상에 유전체막 및 도전층을 적층구조로 형성시키고, 그 양측부의 실리콘기판에 불순물 영역을 형성시킨 다음 불순물 영역 및 상부 도전층을 접속시키면 단위면적당 충전용량이 증대되어 소자의 동작특성을 향상시킬 수 있도록 한 반도체 소자용 캐패시터 및 그 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a capacitor for a semiconductor device and a method of manufacturing the same, wherein a dielectric film and a conductive layer are formed in a stacked structure on a silicon substrate in order to increase a reduced charge capacity per unit area due to high integration of the semiconductor device. The present invention relates to a capacitor for a semiconductor device and a method of manufacturing the same, wherein an impurity region is formed on a silicon substrate at both sides, and then an impurity region and an upper conductive layer are connected to each other, thereby increasing the charge capacity per unit area, thereby improving the operation characteristics of the device.

Description

반도체 소자용 캐패시터 및 그 제조 방법Capacitors for Semiconductor Devices and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 따른 반도체 소자용 캐패시터를 설명하기 위한 소자의 단면도.1 is a cross-sectional view of a device for explaining a capacitor for a semiconductor device according to the present invention.

제2도는 제1도의 등가회로도.2 is an equivalent circuit diagram of FIG.

Claims (5)

반도체 소자용 캐패시터에 있어서, 실리콘 기판상에 제1유전체막, 제1도전층, 제2유전체막 및 제2도전층이 순차적으로 적층되며, 그 양측의 상기 실리콘 기판의 상부에 불순물 영역이 형성되고, 상기불순물 영역 및 제2도전층을 캐패시터의 한 단자로 하고 상기 제1도전층을 캐패시터의 다른 한 단자로 하여 구성되는 것을 특징으로 하는 반도체 소자용 캐피시터.In a semiconductor device capacitor, a first dielectric film, a first conductive layer, a second dielectric film, and a second conductive layer are sequentially stacked on a silicon substrate, and impurity regions are formed on top of the silicon substrate on both sides thereof. And the impurity region and the second conductive layer as one terminal of the capacitor, and the first conductive layer as the other terminal of the capacitor. 제1항에 있어서, 상기 제1도전층, 제2유전체막 및 제2도전층으로 하나의 캐패시터가 구성되며, 상기 제1도전층, 제1유전체막 및 불순물 영역으로 다른 하나의 캐패시터가 구성되는 것을 특징으로 하는 반도체 소자용 캐패시터.The capacitor of claim 1, wherein one capacitor is formed of the first conductive layer, the second dielectric layer, and the second conductive layer, and the other capacitor is configured of the first conductive layer, the first dielectric layer, and the impurity region. A capacitor for a semiconductor device, characterized in that. 제2항에 있어서, 상기 하나의 캐패시터와 다른 하나의 캐패시터는 병렬 접속된 것을 특징으로 하는 반도체 소자용 캐패시터.3. The capacitor as claimed in claim 2, wherein the one capacitor and the other capacitor are connected in parallel. 제1항에 있어서, 상기 제1 및 제2유전체막은 산화막 또는 ONO 막이며, 상기 제1 및 제2도전층은 폴리실리콘층인 것을 특징으로 하는 반도체 소자용 캐패서터.2. The capacitor of claim 1, wherein the first and second dielectric films are an oxide film or an ONO film, and the first and second conductive layers are polysilicon layers. 반도체 소자용 캐패시터의 제조방법에 있어서, 실리콘 기판상에 제1유전체막, 제1도전층, 제2유전체막 및 제2도전층을 순차적으로 형성한 후 소정의 마스크를 사용하여 패터닝시키는 단계와, 상기 단계로 부터 노출된 상기 실리콘 기판의 상부에 불순물 영역을 형성시킨 후 소정의 절연 및 메탈공정을 진행하여 상기 제2도전층과 불순물 영역을 접속시켜 캐패시터의 한 단자로 하고 상기 제1도전층을 캐패시터의 다른 한 단자로 형성시키는 단계로 이루어지는 것을 특징으로 하는 반도체 소자용 캐패시터의 제조방법.A method of manufacturing a capacitor for a semiconductor device, comprising: sequentially forming a first dielectric film, a first conductive layer, a second dielectric film, and a second conductive layer on a silicon substrate, and patterning the same using a predetermined mask; After the impurity region is formed on the silicon substrate exposed from the above step, a predetermined insulation and metal process is performed to connect the second conductive layer and the impurity region to form a terminal of a capacitor, and the first conductive layer is formed. A method for manufacturing a capacitor for a semiconductor device, comprising the step of forming the other terminal of the capacitor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940022305A 1994-09-06 1994-09-06 Capacitors for Semiconductor Devices and Manufacturing Method Thereof KR960012479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940022305A KR960012479A (en) 1994-09-06 1994-09-06 Capacitors for Semiconductor Devices and Manufacturing Method Thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940022305A KR960012479A (en) 1994-09-06 1994-09-06 Capacitors for Semiconductor Devices and Manufacturing Method Thereof

Publications (1)

Publication Number Publication Date
KR960012479A true KR960012479A (en) 1996-04-20

Family

ID=66686577

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940022305A KR960012479A (en) 1994-09-06 1994-09-06 Capacitors for Semiconductor Devices and Manufacturing Method Thereof

Country Status (1)

Country Link
KR (1) KR960012479A (en)

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