KR960012296A - 전자선 묘화장치 및 전자선 묘화 방법 - Google Patents

전자선 묘화장치 및 전자선 묘화 방법 Download PDF

Info

Publication number: KR960012296A
Authority: KR; South Korea
Prior art keywords: electron beam; beam writing; writing device; writing method; electron
Prior art date: 1994-09-16

Application number

KR1019950030357A

Other languages

English (en)

Other versions

KR100223201B1 (ko

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-09-16

Filing date

1995-09-16

Publication date

1996-04-20

1995-09-16 Application filed filed Critical

1996-04-20 Publication of KR960012296A publication Critical patent/KR960012296A/ko

1999-10-15 Application granted granted Critical

1999-10-15 Publication of KR100223201B1 publication Critical patent/KR100223201B1/ko

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Nanotechnology (AREA)
Physics & Mathematics (AREA)
Analytical Chemistry (AREA)
Crystallography & Structural Chemistry (AREA)
Manufacturing & Machinery (AREA)
General Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Mathematical Physics (AREA)
Theoretical Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Electron Beam Exposure (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

KR1019950030357A 1994-09-16 1995-09-16 전자선 묘화 장치 및 전자선 묘화 방법 KR100223201B1 (ko)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JP94-222254		1994-09-16
JP22225494		1994-09-16
JP95-232157		1995-09-11
JP23215795A JP3378413B2 (ja)	1994-09-16	1995-09-11	電子線描画装置及び電子線描画方法

Publications (2)

Publication Number	Publication Date
KR960012296A true KR960012296A (ko)	1996-04-20
KR100223201B1 KR100223201B1 (ko)	1999-10-15

Family

ID=26524778

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019950030357A KR100223201B1 (ko)	1994-09-16	1995-09-16	전자선 묘화 장치 및 전자선 묘화 방법

Country Status (3)

Country	Link
US (1)	US5767521A (ko)
JP (1)	JP3378413B2 (ko)
KR (1)	KR100223201B1 (ko)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7705383B2 (en) *	1995-09-20	2010-04-27	Micron Technology, Inc.	Integrated circuitry for semiconductor memory
US6967369B1 (en)	1995-09-20	2005-11-22	Micron Technology, Inc.	Semiconductor memory circuitry
US6225637B1 (en)	1996-10-25	2001-05-01	Canon Kabushiki Kaisha	Electron beam exposure apparatus
US6373071B1 (en)	1999-06-30	2002-04-16	Applied Materials, Inc.	Real-time prediction of proximity resist heating and correction of raster scan electron beam lithography
US6950195B2 (en) *	2000-03-30	2005-09-27	Hitachi, Ltd.	Interference measuring device
US6799312B1 (en) *	2000-06-05	2004-09-28	Taiwan Semiconductor Manufacturing Company	Dark line CD and XY-CD improvement method of the variable shaped beam lithography in mask or wafer making
JP2002117800A (ja)	2000-10-05	2002-04-19	Jeol Ltd	電子線バイプリズム装置を備えた電子顕微鏡
US6566655B1 (en)	2000-10-24	2003-05-20	Advanced Micro Devices, Inc.	Multi-beam SEM for sidewall imaging
KR100597014B1 (ko) *	2001-01-10	2006-07-06	재단법인서울대학교산학협력재단	물질의 결정 구조를 이용한 패턴 형성 방법 및 그 구조를갖는 기능성 소자
KR100462055B1 (ko) *	2001-04-03	2004-12-17	재단법인서울대학교산학협력재단	물질의 결정구조를 이용한 패턴 형성 방법 및 장치
KR100405977B1 (ko) *	2001-12-06	2003-11-14	엘지전자 주식회사	나노 와이어 제조방법
US7084413B2 (en) *	2002-08-08	2006-08-01	Micron Technology, Inc.	Photolithographic techniques for producing angled lines
US6936496B2 (en)	2002-12-20	2005-08-30	Hewlett-Packard Development Company, L.P.	Nanowire filament
US7015469B2 (en) *	2003-01-09	2006-03-21	Jeol Usa, Inc.	Electron holography method
US7132298B2 (en) *	2003-10-07	2006-11-07	Hewlett-Packard Development Company, L.P.	Fabrication of nano-object array
US7223611B2 (en) *	2003-10-07	2007-05-29	Hewlett-Packard Development Company, L.P.	Fabrication of nanowires
US7407738B2 (en) *	2004-04-02	2008-08-05	Pavel Kornilovich	Fabrication and use of superlattice
US7727820B2 (en) *	2004-04-30	2010-06-01	Hewlett-Packard Development Company, L.P.	Misalignment-tolerant methods for fabricating multiplexing/demultiplexing architectures
US7683435B2 (en) *	2004-04-30	2010-03-23	Hewlett-Packard Development Company, L.P.	Misalignment-tolerant multiplexing/demultiplexing architectures
US20050241959A1 (en) *	2004-04-30	2005-11-03	Kenneth Ward	Chemical-sensing devices
US7247531B2 (en) *	2004-04-30	2007-07-24	Hewlett-Packard Development Company, L.P.	Field-effect-transistor multiplexing/demultiplexing architectures and methods of forming the same
US20060024814A1 (en) *	2004-07-29	2006-02-02	Peters Kevin F	Aptamer-functionalized electrochemical sensors and methods of fabricating and using the same
GB2421630B (en) *	2004-12-21	2006-11-29	Leica Microsys Lithography Ltd	Dual-mode electron beam column
US7375012B2 (en) *	2005-02-28	2008-05-20	Pavel Kornilovich	Method of forming multilayer film
JP4920370B2 (ja) *	2006-10-30	2012-04-18	株式会社日立製作所	透過型電子顕微鏡の情報伝達限界測定法およびこの測定法が適用された透過型電子顕微鏡
JP5562243B2 (ja) *	2007-09-25	2014-07-30	サントルナショナルドゥラルシェルシュシアンティフィク	ナノスケール変形を測定する方法、デバイス及びシステム
KR101095367B1 (ko) *	2009-08-07	2011-12-16	서울대학교산학협력단	물질의 결정구조를 이용한 패턴 형성방법
CN107473179B (zh) *	2016-06-08	2019-04-23	清华大学	一种表征二维纳米材料的方法
CN107481913B (zh) *	2016-06-08	2019-04-02	清华大学	一种电子束加工系统
CN107479330B (zh) *	2016-06-08	2019-02-05	清华大学	一种采用电子束的光刻方法
CN107481914B (zh) *	2016-06-08	2023-06-06	清华大学	一种透射型低能量电子显微系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3847689A (en) *	1972-01-28	1974-11-12	Nasa	Method of forming aperture plate for electron microscope
US3996468A (en) *	1972-01-28	1976-12-07	Nasa	Electron microscope aperture system
DE3008404C2 (de) *	1980-03-05	1984-07-19	Helmut 8046 Garching Formanek	Verfahren und Einrichtung zum Erzeugen von Elektronenstrahl-Beugungsbildern
JP3235144B2 (ja) *	1991-08-02	2001-12-04	ソニー株式会社	量子箱列の作製方法
US5260151A (en) *	1991-12-30	1993-11-09	At&T Bell Laboratories	Device manufacture involving step-and-scan delineation
JP3285157B2 (ja) *	1992-08-11	2002-05-27	科学技術振興事業団	位相情報観測方法及び位相情報観測用干渉装置

1995
- 1995-09-11 JP JP23215795A patent/JP3378413B2/ja not_active Expired - Fee Related
- 1995-09-14 US US08/528,409 patent/US5767521A/en not_active Expired - Fee Related
- 1995-09-16 KR KR1019950030357A patent/KR100223201B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
JPH08139013A (ja)	1996-05-31
JP3378413B2 (ja)	2003-02-17
US5767521A (en)	1998-06-16
KR100223201B1 (ko)	1999-10-15

Publication	Publication Date	Title
KR960012296A (ko)	1996-04-20	전자선 묘화장치 및 전자선 묘화 방법
DE69727112D1 (de)	2004-02-12	Elektronenstrahl-Belichtungsgerät und Belichtungsverfahren
DE69420971D1 (de)	1999-11-04	Markierungsmittel und lasermarkierungsverfahren
FI960358L (fi)	1997-07-27	Kuulokeväline ja menetelmä kuulokevälineen asettamiseksi
DE69632555D1 (de)	2004-07-01	Aufzeichnungsgerät und -verfahren
DE69527353D1 (de)	2002-08-14	Beschichtungsverfahren und -vorrichtung
DE69430962D1 (de)	2002-08-22	Bilddefokusierungsverfahren und -vorrichtung
DE69628956D1 (de)	2003-08-07	Abtastvorrichtung und -verfahren
FI951769A (fi)	1995-10-14	Röntgenkuvauslaitteisto ja tukilaite sekä menetelmä
DE69836310D1 (de)	2006-12-14	Punktaufzeichnungsverfahren und punktaufzeichnungsvorrichtung
DE69406739D1 (de)	1997-12-18	Elektronenstrahlgerät
DE19681641T1 (de)	1998-10-15	Laserabtastverfahren und -einrichtung
DE69602772D1 (de)	1999-07-15	Elektronenstrahlgerät und Steuerverfahren dafür
DE69523060D1 (de)	2001-11-08	Luziferase-markierungsmethode
BR9506832A (pt)	1997-10-14	N-pirazolilanilinas e n-pirazolilaminopiridinas
KR960013620A (ko)	1996-05-22	성형 방법 및 성형 장치
DE69838897D1 (de)	2008-02-07	Aufzeichnungsverfahren und -vorrichtung
DE69535201D1 (de)	2006-10-12	Positionsbestimmungsgerät und -verfahren
KR960008810A (ko)	1996-03-22	편집 방법 및 편집 제어 기기
DE19681593T1 (de)	1998-10-08	Gravierverfahren und -vorrichtung
DE69618636D1 (de)	2002-02-28	Druckverfahren und -vorrichtung
DE69518883D1 (de)	2000-10-26	Druckvorrichtung und -verfahren
DE69518183D1 (de)	2000-09-07	Beschichtungsvorrichtung und -verfahren
DE59303531D1 (de)	1996-10-02	Elektronenstrahl-Vorrichtung
FI962103A0 (fi)	1996-05-17	Höyrystyslaite ja menetelmä

Legal Events

Date	Code	Title	Description
1995-09-16	A201	Request for examination
1995-09-16	PA0109	Patent application	Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19950916
1995-09-16	PA0201	Request for examination	Patent event code: PA02012R01D Patent event date: 19950916 Comment text: Request for Examination of Application
1996-04-20	PG1501	Laying open of application
1998-09-29	E902	Notification of reason for refusal
1998-09-29	PE0902	Notice of grounds for rejection	Comment text: Notification of reason for refusal Patent event date: 19980929 Patent event code: PE09021S01D
1999-05-24	E701	Decision to grant or registration of patent right
1999-05-24	PE0701	Decision of registration	Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19990524
1999-07-08	GRNT	Written decision to grant
1999-07-08	PR0701	Registration of establishment	Comment text: Registration of Establishment Patent event date: 19990708 Patent event code: PR07011E01D
1999-07-08	PR1002	Payment of registration fee	Payment date: 19990709 End annual number: 3 Start annual number: 1
1999-10-15	PG1601	Publication of registration
2002-06-26	PR1001	Payment of annual fee	Payment date: 20020626 Start annual number: 4 End annual number: 4
2003-07-01	PR1001	Payment of annual fee	Payment date: 20030701 Start annual number: 5 End annual number: 5
2004-06-30	PR1001	Payment of annual fee	Payment date: 20040630 Start annual number: 6 End annual number: 6
2005-06-30	PR1001	Payment of annual fee	Payment date: 20050630 Start annual number: 7 End annual number: 7
2006-06-30	FPAY	Annual fee payment	Payment date: 20060630 Year of fee payment: 8
2006-06-30	PR1001	Payment of annual fee	Payment date: 20060630 Start annual number: 8 End annual number: 8
2007-07-09	LAPS	Lapse due to unpaid annual fee
2007-07-09	PC1903	Unpaid annual fee	Termination category: Default of registration fee Termination date: 20080610