KR960009251A - 레이저재료가공시 수반되는 레이저융삭을 경유한 초전도부품의 제작방법 및 장치 - Google Patents

레이저재료가공시 수반되는 레이저융삭을 경유한 초전도부품의 제작방법 및 장치 Download PDF

Info

Publication number: KR960009251A
Authority: KR; South Korea
Prior art keywords: material processing; laser; accompanying; manufacturing superconducting; superconducting parts
Prior art date: 1994-08-26

Application number

KR1019950026697A

Other languages

English (en)

Other versions

KR100234850B1 (ko

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-08-26

Filing date

1995-08-26

Publication date

1996-03-22

1995-08-26 Application filed filed Critical

1996-03-22 Publication of KR960009251A publication Critical patent/KR960009251A/ko

1999-12-15 Application granted granted Critical

1999-12-15 Publication of KR100234850B1 publication Critical patent/KR100234850B1/ko

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/732—Evaporative coating with superconducting material

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Manufacturing & Machinery (AREA)
Organic Chemistry (AREA)
Optics & Photonics (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Health & Medical Sciences (AREA)
Physics & Mathematics (AREA)
Chemical Kinetics & Catalysis (AREA)
Toxicology (AREA)
Physical Vapour Deposition (AREA)
Inorganic Compounds Of Heavy Metals (AREA)
Superconductor Devices And Manufacturing Methods Thereof (AREA)
Superconductors And Manufacturing Methods Therefor (AREA)
Oxygen, Ozone, And Oxides In General (AREA)

KR1019950026697A 1994-08-26 1995-08-26 레이저재료 가공시 수반되는 레이저융삭을 경유한 초전도부품의 제작방법 및 장치 KR100234850B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP6225709A JPH0870144A (ja)	1994-08-26	1994-08-26	超電導部品の作製方法
JP94-225709		1994-08-26

Publications (2)

Publication Number	Publication Date
KR960009251A true KR960009251A (ko)	1996-03-22
KR100234850B1 KR100234850B1 (ko)	1999-12-15

Family

ID=16833580

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019950026697A KR100234850B1 (ko)	1994-08-26	1995-08-26	레이저재료 가공시 수반되는 레이저융삭을 경유한 초전도부품의 제작방법 및 장치

Country Status (7)

Country	Link
US (2)	US5672210A (ko)
EP (1)	EP0698931B1 (ko)
JP (1)	JPH0870144A (ko)
KR (1)	KR100234850B1 (ko)
CA (1)	CA2156878A1 (ko)
DE (1)	DE69506338T2 (ko)
TW (1)	TW383512B (ko)

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US6209203B1 (en) *	1998-01-08	2001-04-03	Lexmark International, Inc.	Method for making nozzle array for printhead
US6120857A (en) *	1998-05-18	2000-09-19	The Regents Of The University Of California	Low work function surface layers produced by laser ablation using short-wavelength photons
US6265033B1 (en)	1998-09-11	2001-07-24	Donald Bennett Hilliard	Method for optically coupled vapor deposition
WO2000031315A1 (en) *	1998-11-20	2000-06-02	Fernandez Felix E	Apparatus and method for pulsed laser deposition of materials on wires and pipes
US6335208B1 (en)	1999-05-10	2002-01-01	Intersil Americas Inc.	Laser decapsulation method
DE50014083D1 (de) *	1999-11-26	2007-04-05	Europ High Temperature Superco	Verfahren zur Erzeugung einer supraleitfähigen Schicht
US6491759B1 (en) *	2000-03-14	2002-12-10	Neocera, Inc.	Combinatorial synthesis system
KR100890981B1 (ko) *	2000-10-26	2009-03-27	네오포토닉스 코포레이션	모놀리식 광학 구조체, 이 모놀리식 광학 구조체의 형성 방법, 가요성 광섬유, 광섬유 형성 방법, 및 광섬유 예비 성형체
JP2002235168A (ja) *	2001-02-08	2002-08-23	Sumitomo Electric Ind Ltd	成膜方法および成膜装置
FR2827705B1 (fr) *	2001-07-19	2003-10-24	Commissariat Energie Atomique	Transistor et procede de fabrication d'un transistor sur un substrat sige/soi
US20030054105A1 (en) *	2001-08-14	2003-03-20	Hammond Robert H.	Film growth at low pressure mediated by liquid flux and induced by activated oxygen
JP2003156858A (ja) *	2001-11-22	2003-05-30	Tokyo Electron Ltd	基板処理方法及び基板処理システム
US20030129396A1 (en) *	2001-12-27	2003-07-10	Gerhard Kiessling	Coating composition for metal conductors and coating process involving the use thereof
US7271012B2 (en) *	2003-07-15	2007-09-18	Control Systemation, Inc.	Failure analysis methods and systems
US20050067389A1 (en) *	2003-09-25	2005-03-31	Greer James A.	Target manipulation for pulsed laser deposition
US7405165B2 (en) *	2004-11-05	2008-07-29	Taiwan Semiconductor Manufacturing Co, Ltd	Dual-tank etch method for oxide thickness control
ES2325894B1 (es) *	2006-02-24	2010-10-28	Universidad De Cadiz	Metodo y aparato para la fabricacion de elementos opticos difractivos.
ES2299335B2 (es) *	2006-03-09	2010-10-13	Universidad De Cadiz	Metodo para la fabricacion de estructuras opticas con funcionalidad puramente refractivas.
US8742282B2 (en)	2007-04-16	2014-06-03	General Electric Company	Ablative plasma gun
US9368772B1 (en)	2009-06-15	2016-06-14	Sakti3, Inc.	Packaging and termination structure for a solid state battery
JP2011012349A (ja) *	2010-10-01	2011-01-20	Hochiki Corp	薄膜形成装置およびそれを用いた薄膜形成方法
JP2013122065A (ja) *	2011-12-09	2013-06-20	Sumitomo Electric Ind Ltd	機能性薄膜の成膜方法および成膜装置
WO2014024144A1 (en) *	2012-08-08	2014-02-13	Milman Thin Film Systems Pvt. Ltd.	Physical vapor deposition station
KR102188372B1 (ko) *	2019-09-19	2020-12-08	주식회사 테토스	기판 양 측면부 증착 장치
KR102188373B1 (ko) *	2019-09-20	2020-12-08	주식회사 테토스	기판 양 측면부 증착 장치
CN115537737B (zh) *	2022-10-13	2023-11-17	西南交通大学	一种薄涂层的制备方法及系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4701592A (en) *	1980-11-17	1987-10-20	Rockwell International Corporation	Laser assisted deposition and annealing
JPS63250881A (ja) *	1987-04-07	1988-10-18	Semiconductor Energy Lab Co Ltd	超電導体の作製方法
JPS6443915A (en)	1987-08-10	1989-02-16	Univ Tokai	Manufacture of superconductive material
JP2822447B2 (ja) *	1989-05-19	1998-11-11	住友電気工業株式会社	酸化物超電導線材の製造方法および装置
JPH03174307A (ja) *	1989-11-30	1991-07-29	Chiyoudendou Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai	酸化物超電導体の製造方法

1994
- 1994-08-26 JP JP6225709A patent/JPH0870144A/ja active Pending
1995
- 1995-08-22 US US08/517,957 patent/US5672210A/en not_active Expired - Fee Related
- 1995-08-24 CA CA002156878A patent/CA2156878A1/en not_active Abandoned
- 1995-08-25 DE DE69506338T patent/DE69506338T2/de not_active Expired - Fee Related
- 1995-08-25 EP EP95113376A patent/EP0698931B1/en not_active Expired - Lifetime
- 1995-08-25 TW TW084108862A patent/TW383512B/zh not_active IP Right Cessation
- 1995-08-26 KR KR1019950026697A patent/KR100234850B1/ko not_active IP Right Cessation
1997
- 1997-03-07 US US08/813,076 patent/US5952271A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US5952271A (en)	1999-09-14
JPH0870144A (ja)	1996-03-12
EP0698931B1 (en)	1998-12-02
TW383512B (en)	2000-03-01
EP0698931A1 (en)	1996-02-28
US5672210A (en)	1997-09-30
DE69506338T2 (de)	1999-05-12
KR100234850B1 (ko)	1999-12-15
CA2156878A1 (en)	1996-02-27
DE69506338D1 (de)	1999-01-14

Publication	Publication Date	Title
KR960009251A (ko)	1996-03-22	레이저재료가공시 수반되는 레이저융삭을 경유한 초전도부품의 제작방법 및 장치
GB9116337D0 (en)	1991-09-11	Apparatus and method for monitoring laser material processing
KR970700962A (ko)	1997-02-12	멀티유저-간섭 감소 장치 및 방법과 코드분할 다중 액세스 통신 시스템(method and apparatus for multiuser-interference reduction)
KR960012379A (ko)	1996-04-20	가열장치 및 그 제조방법, 및 그것을 이용한 처리장치
GB9006042D0 (en)	1990-05-09	Laser material processing apparatus and method therefor
DE19581386T1 (de)	1996-12-05	Hemmsteg-Schneidevorrichtung und Hemmsteg-Schneideverfahren
DE69420971D1 (de)	1999-11-04	Markierungsmittel und lasermarkierungsverfahren
DE59502183D1 (de)	1998-06-18	Verfahren und vorrichtung zum materialbearbeiten mit plasma induzierender laserstrahlung
DE69530452D1 (de)	2003-05-28	Verfahren und Gerät zur Energiestrahlbearbeitung
FI990747L (fi)	1999-06-04	Menetelmä ja laitteisto selluloosakuitumateriaalin käsittelemiseksi
FI960756L (fi)	1997-08-20	Menetelmä selluloosamateriaalin käsittelemiseksi
GB2287828B (en)	1998-04-01	Semiconductor laser device and fabricating method therefor
GB9118315D0 (en)	1991-10-09	Apparatus and method for monitoring laser material processing
DE69628813D1 (de)	2003-07-31	Laserbearbeitungsvorrichtung und laserbearbeitungsverfahren
KR960016661A (ko)	1996-05-22	피이크형 유전성 댐(Peak-shaped Dam)을 갖는 장치 및 그 제조 방법
GB2287124B (en)	1998-01-28	Semiconductor laser and method for fabricating semiconductor laser
FI20002600L (fi)	2000-11-27	Euphausiidien keräys- ja käsittelymenetelmä ja -laite
DK0641978T3 (da)	1998-09-07	Kølefremgangsmåde og -apparat
FI953687L (fi)	1995-09-20	Menetelmä ja laite tuotteiden valmistamiseksi
FI944935A (fi)	1996-04-21	Menetelmä ja laite kappaleiden käärimiseksi
DE19580444T1 (de)	1997-08-21	Laserbearbeitungsvorrichtung, Laserbearbeitungsverfahren und Hemmsteg-Bearbeitungsverfahren
FI954370A0 (fi)	1995-09-15	Menetelmä ja laite materiaalin ruiskuttamiseksi
KR960011552A (ko)	1996-04-20	공작물의 절단방법 및 장치
FI954408L (fi)	1996-03-23	Laite ja menetelmä paistamista varten
FI942658A (fi)	1994-06-06	Menetelmä ja laite työstöalueen jäähdyttämiseksi

Legal Events

Date	Code	Title	Description
1995-08-26	A201	Request for examination
1995-08-26	PA0109	Patent application	Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19950826
1995-08-26	PA0201	Request for examination	Patent event code: PA02012R01D Patent event date: 19950826 Comment text: Request for Examination of Application
1996-03-22	PG1501	Laying open of application
1998-08-21	E902	Notification of reason for refusal
1998-08-21	PE0902	Notice of grounds for rejection	Comment text: Notification of reason for refusal Patent event date: 19980821 Patent event code: PE09021S01D
1999-01-18	AMND	Amendment
1999-02-25	E601	Decision to refuse application
1999-02-25	PE0601	Decision on rejection of patent	Patent event date: 19990225 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 19980821 Comment text: Notification of reason for refusal Patent event code: PE06011S01I
1999-06-01	J201	Request for trial against refusal decision
1999-06-01	PJ0201	Trial against decision of rejection	Patent event date: 19990601 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 19990225 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 19990909 Appeal identifier: 1999101001945 Request date: 19990601
1999-07-01	AMND	Amendment
1999-08-14	PB0901	Examination by re-examination before a trial	Comment text: Amendment to Specification, etc. Patent event date: 19990701 Patent event code: PB09011R02I Comment text: Request for Trial against Decision on Refusal Patent event date: 19990601 Patent event code: PB09011R01I Comment text: Amendment to Specification, etc. Patent event date: 19990118 Patent event code: PB09011R02I
1999-08-20	B701	Decision to grant
1999-08-20	PB0701	Decision of registration after re-examination before a trial	Patent event date: 19990820 Comment text: Decision to Grant Registration Patent event code: PB07012S01D Patent event date: 19990814 Comment text: Transfer of Trial File for Re-examination before a Trial Patent event code: PB07011S01I
1999-09-20	GRNT	Written decision to grant
1999-09-20	PR0701	Registration of establishment	Comment text: Registration of Establishment Patent event date: 19990920 Patent event code: PR07011E01D
1999-09-20	PR1002	Payment of registration fee	Payment date: 19990921 End annual number: 3 Start annual number: 1
1999-12-15	PG1601	Publication of registration
2002-09-05	FPAY	Annual fee payment	Payment date: 20020905 Year of fee payment: 4
2002-09-05	PR1001	Payment of annual fee	Payment date: 20020905 Start annual number: 4 End annual number: 4
2003-09-21	LAPS	Lapse due to unpaid annual fee
2003-09-21	PC1903	Unpaid annual fee	Termination category: Default of registration fee Termination date: 20040610