KR960008544A - Method and apparatus for selecting multiple memory banks - Google Patents
Method and apparatus for selecting multiple memory banks Download PDFInfo
- Publication number
- KR960008544A KR960008544A KR1019950024789A KR19950024789A KR960008544A KR 960008544 A KR960008544 A KR 960008544A KR 1019950024789 A KR1019950024789 A KR 1019950024789A KR 19950024789 A KR19950024789 A KR 19950024789A KR 960008544 A KR960008544 A KR 960008544A
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- KR
- South Korea
- Prior art keywords
- bank
- memory
- signal
- inputs
- asynchronous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
Abstract
메모의 뱅크 선택 시스템은 두 개의 비동기 RAS 핀, 하나의 CAS핀 각 메모리 뱅크에 대한 스위칭 회로, 및 출력이 각 스위칭 회로로 향하는 뱅크 어드레스 디코더를 포함한다. RAS 핀은 모든 스위칭 회로에 사용가능하다. 주어진 스위칭 회로는 액티브인 RAS 핀은 모든 스위칭 회로에 사용가능하다. 주어진 스위칭 회로는 액티브인 RAS 신호가 존재하고 뱅크 어드레스 디코더 출력이 스위칭 회로로 전송되어진 경우에 자신에 연결된 뱅크를 선택한다. 동시에 액티브로 될 수 있는 메모리 뱅크의 수는 RAS 입력의 수에 직접적인 관계를 가진다. 다르게는, CAS 핀의 수는 비동기 RAS 핀의 수와 동일하다.The memo bank selection system includes two asynchronous RAS pins, one CAS pin switching circuit for each memory bank, and a bank address decoder whose output is directed to each switching circuit. The RAS pin is available for all switching circuits. Given a switching circuit, the active RAS pin can be used for any switching circuit. A given switching circuit selects the bank connected to it when there is an active RAS signal and the bank address decoder output is sent to the switching circuit. The number of memory banks that can be active at the same time is directly related to the number of RAS inputs. Alternatively, the number of CAS pins is equal to the number of asynchronous RAS pins.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3도는 본 발명에 의한 뱅크 선택 시스템의 간략화된 블록도.3 is a simplified block diagram of a bank selection system according to the present invention.
제4도는 제3도의 예시적인 뱅크 선택 시스템의 세부 사항을 도시하는 도면.4 shows details of the example bank selection system of FIG.
제5도는 제3도 및 제4도의 뱅크 선택 시스뎀에 대한 판독 동작의 타이밍 도.5 is a timing diagram of a read operation for the bank select system of FIGS. 3 and 4. FIG.
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/289,830 | 1994-08-12 | ||
US8/289,830 | 1994-08-12 | ||
US08/289,830 US5530836A (en) | 1994-08-12 | 1994-08-12 | Method and apparatus for multiple memory bank selection |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960008544A true KR960008544A (en) | 1996-03-22 |
KR0174631B1 KR0174631B1 (en) | 1999-04-01 |
Family
ID=23113293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950024789A Expired - Fee Related KR0174631B1 (en) | 1994-08-12 | 1995-08-11 | Method and apparatus for multiple memory bank selection |
Country Status (3)
Country | Link |
---|---|
US (1) | US5530836A (en) |
KR (1) | KR0174631B1 (en) |
TW (1) | TW256894B (en) |
Cited By (1)
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KR100485282B1 (en) * | 2000-01-19 | 2005-04-27 | 인피니언 테크놀로지스 아게 | Method and device for alternately operating a write-read-memory in one-memory-operating mode or crossed multi-memory-operating mode |
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US5996042A (en) * | 1996-12-16 | 1999-11-30 | Intel Corporation | Scalable, high bandwidth multicard memory system utilizing a single memory controller |
JPH10222429A (en) * | 1997-02-03 | 1998-08-21 | Zexel Corp | Selecting method for semiconductor memory cell and semiconductor memory cell selector circuit |
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KR100451799B1 (en) * | 1999-11-22 | 2004-10-08 | 엘지전자 주식회사 | Memory module in a operating memory part |
US6728159B2 (en) * | 2001-12-21 | 2004-04-27 | International Business Machines Corporation | Flexible multibanking interface for embedded memory applications |
KR100437468B1 (en) | 2002-07-26 | 2004-06-23 | 삼성전자주식회사 | Semiconductor memory device with data input/output organization of a multiple of 9 |
US6962399B2 (en) * | 2002-12-30 | 2005-11-08 | Lexmark International, Inc. | Method of warning a user of end of life of a consumable for an ink jet printer |
KR100527569B1 (en) * | 2003-05-09 | 2005-11-09 | 주식회사 하이닉스반도체 | Non-volatile ferroelectric memory and controlling device thereof |
US7394716B1 (en) | 2005-04-01 | 2008-07-01 | Cypress Semiconductor Corporation | Bank availability indications for memory device and method therefor |
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US8041881B2 (en) | 2006-07-31 | 2011-10-18 | Google Inc. | Memory device with emulated characteristics |
US20080028136A1 (en) | 2006-07-31 | 2008-01-31 | Schakel Keith R | Method and apparatus for refresh management of memory modules |
US7392338B2 (en) | 2006-07-31 | 2008-06-24 | Metaram, Inc. | Interface circuit system and method for autonomously performing power management operations in conjunction with a plurality of memory circuits |
US8081474B1 (en) | 2007-12-18 | 2011-12-20 | Google Inc. | Embossed heat spreader |
US8090897B2 (en) | 2006-07-31 | 2012-01-03 | Google Inc. | System and method for simulating an aspect of a memory circuit |
US8386722B1 (en) | 2008-06-23 | 2013-02-26 | Google Inc. | Stacked DIMM memory interface |
US8327104B2 (en) | 2006-07-31 | 2012-12-04 | Google Inc. | Adjusting the timing of signals associated with a memory system |
US9542352B2 (en) | 2006-02-09 | 2017-01-10 | Google Inc. | System and method for reducing command scheduling constraints of memory circuits |
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US8335894B1 (en) | 2008-07-25 | 2012-12-18 | Google Inc. | Configurable memory system with interface circuit |
US8169233B2 (en) | 2009-06-09 | 2012-05-01 | Google Inc. | Programming of DIMM termination resistance values |
US8359187B2 (en) | 2005-06-24 | 2013-01-22 | Google Inc. | Simulating a different number of memory circuit devices |
US8111566B1 (en) | 2007-11-16 | 2012-02-07 | Google, Inc. | Optimal channel design for memory devices for providing a high-speed memory interface |
US9171585B2 (en) | 2005-06-24 | 2015-10-27 | Google Inc. | Configurable memory circuit system and method |
KR101318116B1 (en) | 2005-06-24 | 2013-11-14 | 구글 인코포레이티드 | An integrated memory core and memory interface circuit |
US8244971B2 (en) | 2006-07-31 | 2012-08-14 | Google Inc. | Memory circuit system and method |
US8397013B1 (en) | 2006-10-05 | 2013-03-12 | Google Inc. | Hybrid memory module |
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US7386656B2 (en) | 2006-07-31 | 2008-06-10 | Metaram, Inc. | Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit |
US8438328B2 (en) | 2008-02-21 | 2013-05-07 | Google Inc. | Emulation of abstracted DIMMs using abstracted DRAMs |
US7580312B2 (en) | 2006-07-31 | 2009-08-25 | Metaram, Inc. | Power saving system and method for use with a plurality of memory circuits |
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-
1994
- 1994-08-12 US US08/289,830 patent/US5530836A/en not_active Expired - Fee Related
-
1995
- 1995-03-23 TW TW084102815A patent/TW256894B/en active
- 1995-08-11 KR KR1019950024789A patent/KR0174631B1/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100485282B1 (en) * | 2000-01-19 | 2005-04-27 | 인피니언 테크놀로지스 아게 | Method and device for alternately operating a write-read-memory in one-memory-operating mode or crossed multi-memory-operating mode |
Also Published As
Publication number | Publication date |
---|---|
US5530836A (en) | 1996-06-25 |
KR0174631B1 (en) | 1999-04-01 |
TW256894B (en) | 1995-09-11 |
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