KR960005036B1 - 노광공정에서의 포카스상태 측정용 패턴 및 포카스상태 측정 방법 - Google Patents
노광공정에서의 포카스상태 측정용 패턴 및 포카스상태 측정 방법 Download PDFInfo
- Publication number
- KR960005036B1 KR960005036B1 KR1019920024394A KR920024394A KR960005036B1 KR 960005036 B1 KR960005036 B1 KR 960005036B1 KR 1019920024394 A KR1019920024394 A KR 1019920024394A KR 920024394 A KR920024394 A KR 920024394A KR 960005036 B1 KR960005036 B1 KR 960005036B1
- Authority
- KR
- South Korea
- Prior art keywords
- state
- focus
- pattern
- exposure
- focus state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (2)
- 반도체 제조공정이 노광공정시 포카스상태를 측정하기 위한 패턴에 있어서, 아주 작은 홀과 순차적으로 지름이 크지는 다수의 홀을 직선상에 소정의 개수만큼 나열하여서 된 것이 특징인 포카스상태 측정용 패턴.
- 반도체 제조공정의 노광공정시 포카스상태를 측정하는 방법에 있어서, 아주 작은 홀과 순차적으로 지름이 크지는 다수의 홀을 직선상에 소정의 개수만큼 나열하여서 된 포카스상태 측정용 패턴으로 웨이퍼상에 적정한 노광에너지로 포카스상태를 여러단계로 변화시키면서 스프리트시키고, 현상하여, 홀 지름이 작은 홀까지 뚜렷이 현상된 것이 최적의 노광상태라고 판단하는 것이 특징인 노광공정에서의 포카스상태 측정 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920024394A KR960005036B1 (ko) | 1992-12-16 | 1992-12-16 | 노광공정에서의 포카스상태 측정용 패턴 및 포카스상태 측정 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920024394A KR960005036B1 (ko) | 1992-12-16 | 1992-12-16 | 노광공정에서의 포카스상태 측정용 패턴 및 포카스상태 측정 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940016645A KR940016645A (ko) | 1994-07-23 |
KR960005036B1 true KR960005036B1 (ko) | 1996-04-18 |
Family
ID=19345684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920024394A Expired - Fee Related KR960005036B1 (ko) | 1992-12-16 | 1992-12-16 | 노광공정에서의 포카스상태 측정용 패턴 및 포카스상태 측정 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960005036B1 (ko) |
-
1992
- 1992-12-16 KR KR1019920024394A patent/KR960005036B1/ko not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR940016645A (ko) | 1994-07-23 |
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