KR960003467Y1 - Apparatus for sheltering of radiation of machine for growing crystal-layer - Google Patents
Apparatus for sheltering of radiation of machine for growing crystal-layer Download PDFInfo
- Publication number
- KR960003467Y1 KR960003467Y1 KR2019930014733U KR930014733U KR960003467Y1 KR 960003467 Y1 KR960003467 Y1 KR 960003467Y1 KR 2019930014733 U KR2019930014733 U KR 2019930014733U KR 930014733 U KR930014733 U KR 930014733U KR 960003467 Y1 KR960003467 Y1 KR 960003467Y1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- tube
- substrate
- heater
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
내용 없음.No content.
Description
제1도는 본 고안의 단면 예시도.1 is a cross-sectional view of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1, 6, 9 : 복사 차폐관 2 : 상판1, 6, 9: radiant shield tube 2: top plate
3, 8 : 히터 4 : 기판3, 8: heater 4: substrate
5 : 도가니 6' : 금막5: crucible 6 ': gold curtain
7 : 시료7: sample
본 고안은 도가니의 주위에 설치된 히터와 도가니 상단부측에 설치된 기판 가열용 히터의 외부에 복사 차폐관을 형성하고 도가니의 상단부에 기판을 재치하여 도가니에 투입된 시료를 전열 히터에 의하여 가열증발시키어 기판에 박막을 색장기키는 박막 생장 장치의 일종인 핫웰 에피탁시(Hot wall epitaxy) 장치에 있어서, 도가니의 복사 차폐관을 종래의 스테인 레스 관 대신 금막(金膜)이 적층된 석영관으로 형성하여 생장된 박막의 물리적 특성을 현저하게 향상시킬 수 있게 한 박막 생장 장치의 복사 차폐관에 관한 것이다.The present invention forms a radiation shielding tube outside the heater installed around the crucible and the substrate heating heater installed on the upper end side of the crucible, and the substrate placed on the upper end of the crucible is heated and evaporated by the electrothermal heater to the sample injected into the crucible. In the hot-wall epitaxy apparatus, which is a kind of thin film growing apparatus, the radiant shield tube of the crucible is formed of a quartz tube laminated with a gold film instead of the conventional stainless steel tube. The present invention relates to a radiation shielding tube of a thin film growing apparatus that enables to significantly improve the physical properties of the grown thin film.
종래 반도체의 박막 생장장치는 분자선 에피탁시(MBE)장치, 유기금속 화학증기부착(MOCVD)장치 등이 있으나 NBE장치는 고가이고 후자에서 사용되는 유기금속은 유독하여 연구실에서 손 쉽게 사용할 수 없는 난점이 있었다. PbTe과 CdTe와 같은 II-VI족이나 II-VI족 화합물 반도체는 비교적 증기압이 높아서 핫웰 에피탁시(HWE)장치를 이용하면 손 쉽게 양질의 박막을 염가로 생장시킬 수 있다.Conventional thin film growth devices of semiconductor include molecular beam epitaxy (MBE) and organometallic chemical vapor deposition (MOCVD) devices, but NBE devices are expensive and organic metals used in the latter are toxic and cannot be easily used in the laboratory. There was this. Group II-VI or II-VI compound semiconductors, such as PbTe and CdTe, have relatively high vapor pressures, so that hot-wall epitaxial (HWE) devices can be used to easily produce high-quality thin films at low cost.
그러나 종래의 핫웰 에피탁시(HWE)장치는 복사 차폐관으로써 스테인 레스 관을 사용하였기 때문에 양질의 박막으로 생장시키기 어려운 문제점이 있었다.However, the conventional Hotwell Epitaxy (HWE) device has a problem in that it is difficult to grow a high quality thin film because the stainless steel tube is used as the radiation shielding tube.
본 고안은 종래의 이러한 문제점을 시정하기 위하여 핫웰 에피탁시장치에 있어서 복사 차폐관을 종래의 스테인레스 관 대신 내면에 금막을 적층 형성한 석영관을 차폐관으로 형성하여 생장된 박막의 물리적 특성을 현저하게 개량시킨 것이다.In order to correct this problem in the related art, in the hot-well epitaxy apparatus, the radiant shielding tube is formed of a quartz tube in which a gold film is laminated on the inner surface instead of a conventional stainless tube, and thus the physical characteristics of the thin film grown are remarkable. It is an improvement.
즉 차폐관 내면에 적층된 금막에 의하여 히터의 열선(칸탈 또는 Mo)으로부터 나오는 적외선의 95% 이상을 반사 및 집속하여 열효율과 보온 효과를 향상시키어 설정 온도에 신속하게 도달하고 온도의 변동이 적은 안정상태를 유지하기 때문에 물리적 특성이 양호한 박막을 생장시킬 수 있게 한 것이다.In other words, the gold film laminated on the inner surface of the shield tube reflects and focuses more than 95% of the infrared rays emitted from the heating wire (Kantal or Mo) of the heater to improve thermal efficiency and thermal insulation effect, thereby quickly reaching a set temperature and having a low temperature fluctuation. Because of maintaining the state it is possible to grow a thin film with good physical properties.
이 장치는 진공증착 장치와는 달리 열적으로 비평형 상태에서의 증착이 아니라 기화된 화합물 반도체의 증기가 기판에 증착할때까지 거의 일정한 온도로 유지되는 준평형 상태에서 증착된다.Unlike vacuum deposition, the device is not deposited in a thermally equilibrium state, but rather in a quasi-equilibrium state where the vapor of the vaporized compound semiconductor is maintained at a substantially constant temperature until it is deposited on the substrate.
복사 차폐관인 투명 석영관 내면에 금막을 약 2000A°정도 적층한 것을 사용하는 본 고안은 격자 상수가 다른 이종 기판에 박막을 성장시킬때 그 효과가 현저하다. 예를 들면 격자상수가 14.5%나 차이가 있는 (100)GaAs 기판위에 II-VI족 화합물 반도체인 CdTe박막을 생장시키면 박막의 두께가 얇은 생장 초기에는 격자 부정합으로 덩어리 CdTe 결정의 격자상수 값보다 훨씬 크다. 그러나 두께가 두꺼워 질수록 이 변형이 이완되어 정상값에 가까워진다. 이러한 변형의 이완은 스테인레스 차폐관의 경우에는 15um의 두께에서 얻을 수 있는 격자 상수 값은 금막 석영 차폐관을 사용하였을때 3um 정도의 두께에서 이미 나타나게 되어 금막 복사 차폐관의 우수함을 보여주고 있다.The present invention using a lamination of about 2000A of gold film on the inner surface of a transparent quartz tube, which is a radiation shielding tube, has a significant effect when growing a thin film on a heterogeneous substrate having a different lattice constant. For example, if a CdTe thin film, which is a group II-VI compound semiconductor, is grown on a (100) GaAs substrate with a lattice constant of 14.5%, the lattice mismatch at the beginning of thin film growth is much higher than the lattice constant value of the bulk CdTe crystal. Big. However, the thicker the thickness, the more the strain relaxes and approaches the normal value. In the case of the stainless shield tube, the lattice constant value obtained at the thickness of 15 μm is already excellent at the thickness of about 3 μm using the gold quartz shield tube, which shows the superiority of the radiation shield tube.
X선 회절을 이용한 이중결정 요동곡선 피이크의 반폭치(FWHM)는 박막결정의 완전성을 평가하는데 사용된다. 본 고안장치에 의하여 얻은 15um 두께의 CdTe/GaAs의 FWHM 값은 89 arc sec으로 스테인 레스 차폐관의 경우와 130 arc sec과 비교하여 현저하게 우수함을 알수 있다.The half width (FWHM) of the double crystal rocking peaks using X-ray diffraction is used to evaluate the integrity of the thin film crystals. The FWHM value of 15um thick CdTe / GaAs obtained by our device is 89 arc sec, which is remarkably superior to that of the stainless steel shield tube and 130 arc sec.
본 고안 장치에 의하여 CdTe/GaAs 박막생장은 물론이고 MBE나 MOCVD장치로 가능한 CdTe/GaAs양자 우물 또는 CdTe/CdZxTe 초격자 구조를 성공적으로 생장시키어 그 특성을 구명(究明)하여 한국물리학회지(J.Korea Phys. Soc. 26, S 150)(1993년)에 일부를 발표하였으며 1993년 9월 13일 미국 Newport에서 열리는 II-VI 족의 화합물 반도체 국제회의에서 발표된다.We have successfully grown CdTe / GaAs thin film growth, CdTe / GaAs quantum wells or CdTe / CdZxTe superlattice structures that can be used by MBE or MOCVD devices by using the device of this invention. Korea Phys. Soc. 26, S 150) (1993), will be presented at the International Conference on Compound Semiconductors of the II-VI Group of Semiconductors in Newport, USA, on September 13, 1993.
본 고안을 도면에 의하여 상세히 설명하면 다음과 같다.Referring to the present invention in detail by the drawings as follows.
제1도에 표시된 바와 같이 투명 석영관으로 된 도가니(5)의 상부와 하부 주위에는 열선 히터(8)가 설치되고 히터의 외부에는 복사 차폐관(6)이 각각 형성되며 도가니(5)의 상담부측에는 기판(4)을 놓는 개구가 형성된 재치판이 형성되고 그 상부측에 열선 히터(3)가 상판(2)과 복사 차폐관(1)으로 차폐되게 형성된 공지의 핫웰 에피탁시 장치에 있어서, 차폐관(1)(6)(9)을 석영관으로 형성하여 석영 차폐관(1)(6)(9)의 내면에 금막(6')을 소정의 두께로 적층형성하여 열선에서 복사되는 적외선의 반사 및 집속 효율을 보다 높일 수 있게 구성하여서 된 것이다.As shown in FIG. 1, hot wire heaters 8 are installed around upper and lower portions of the crucible 5 made of transparent quartz tubes, and radiation shielding tubes 6 are formed outside the heaters, respectively. In the well-known hot-well epitaxy apparatus in which the board | substrate with an opening which forms the board | substrate 4 is formed in the side side, and the hot wire heater 3 is shielded by the upper board 2 and the radiation shielding tube 1 in the upper side, Infrared rays radiated from hot rays by forming shielding tubes (1) (6) and (9) into quartz tubes and laminating a gold film (6 ') to a predetermined thickness on the inner surface of the quartz shielding tubes (1) (6) and (9). It is designed to increase the reflection and focusing efficiency.
도면중 미설명 부호 7은 시료, 우측의 부호 10-15는 좌측과 동일구조로서 10은 덮개, 11은 상판, 12는히터, 13은 시료실, 14는 격판, 15는 히터이다.In the figure, reference numeral 7 denotes a sample, and reference numerals 10-15 on the right have the same structure as the left side, 10 is a cover, 11 is a top plate, 12 is a heater, 13 is a sample chamber, 14 is a diaphragm, and 15 is a heater.
이와 같이 된 본 고안은 도가니(5)에 시료 CdTe(7)을 넣고 기판(100) GaAs(4)를 도가니(5)의 상단 부에 설치된 재치판의 개구에 장착한 다음 진공펌프에 의하여 본 고안 장치를 밀봉한 쳄버의 내부공기를 10-7Torr로 배기 시킨다. 이어서 시료 표면의 산화물이나 불순물을 600℃로 10분동안 가열하여 제거한다. 특 상부축 히터(3)를 작동시키어 시료가 600℃에서 10분간 가열되어 시료의 표면이 열부식 되게 한다. 이어서 상하 히터(8)를 작동시키어 시료부분을 박막 생장 속도에 따라서 420-500℃로 유지하여 GaAs 기판(4) 위에 CdTe 에피층이 생장되게 한다. 기판(4)의 온도는 상부측 히터(3)로 300℃가 되도록 한다.The present invention as described above, the sample CdTe (7) in the crucible (5) and the substrate 100, GaAs (4) is mounted in the opening of the mounting plate installed on the upper end of the crucible (5) and then the present invention by a vacuum pump Exhaust the air inside the sealed chamber to 10 -7 Torr. Subsequently, oxides or impurities on the surface of the sample are removed by heating to 600 ° C. for 10 minutes. The special upper shaft heater 3 is operated so that the sample is heated at 600 ° C. for 10 minutes to cause the surface of the sample to be thermally corroded. The upper and lower heaters 8 are then operated to maintain the sample portion at 420-500 ° C. according to the thin film growth rate so that the CdTe epilayer is grown on the GaAs substrate 4. The temperature of the substrate 4 is set to 300 ° C. with the upper heater 3.
이때 히터(3)(8)에서 복사되는 적외선은 복사 차폐관(1)(6)(9)내면에 적층된 금막(6')에 의하여 95% 이상 반사되고 또 차폐관이 원통이므로 복사열이 중앙부에 접속되어 낮은 전력으로도 높은 온도를 얻을수 있고 보온성과 접속성때문에 열용량이 작아서 승온 및 냉각시간이 짧으며 열안정성이 뛰어나다.In this case, the infrared rays radiated from the heaters 3 and 8 are reflected by 95% or more by the gold film 6 'laminated on the inner surface of the radiation shielding tubes 1, 6 and 9, and the shielding tube is cylindrical, so radiant heat is transmitted to the center portion. High temperature can be obtained with low power and low heat capacity due to heat retention and connectivity, resulting in short temperature and cooling time and excellent thermal stability.
CdTe/GaAs의 경우에 시료(7)의 온도를 420℃로 할 경우 박막생장속도는 약 0.7um/hr이며, 이렇게 얻은 CdTe 박막은 결정학적, 광학적 특성이 우수하여 MBE와 같은 고가의 장치로 생장 시킨 박막에 비하여 손색이 없는 고품질의 박막을 생장시킬 수 있다.In the case of CdTe / GaAs, the film growth rate is about 0.7um / hr when the temperature of the sample 7 is 420 ° C. The CdTe thin film thus obtained has excellent crystallographic and optical properties, so it is grown in an expensive device such as MBE. Compared with the thin film, a high quality thin film can be grown.
또한 본 고안의 요부인 차폐관(1)(9)은 500-600℃이하의 온도에서 (사용됨으로 구태여 석영관으로 사용할 필요가 없으며 Pyrex등의 경질유리관으로도 무방하다. 그러나 시료를 420℃ 이상으로 가열하는 만큼 히터(8)의 상단부는 500℃ 이상으로 가열해야 하므로 복사 차폐관(6)은 석영관이어야 하며 투명 석영관을 사용하면 히터에서 나오는 가시광선이 투과됨으로 내부와 시로(7) 부위를 직접 관찰할수 있는 이점이 있다.In addition, the shielding tube (1) (9), which is the main part of the present invention, is used at a temperature of 500-600 ° C. or lower, so it is not necessary to use it as a quartz tube and may be a hard glass tube such as Pyrex. Since the upper end of the heater 8 should be heated to 500 ° C. or more as much as it is heated, the radiant shield tube 6 should be a quartz tube. There is an advantage that can be observed directly.
또 도면의 우측장치는 좌측장치와 동일한 것으로 시료실(13)에 CdZnTe 같은 시료를 넣어 기판 부위를 좌우로 이동시키면 단일양자 우물구조인 CdZnTe/CdTe/CdZnTe on GaAs, 또는 이들의 초격자를 생장시킬 수 있는 등의 효과가 있다.In addition, the device on the right side of the drawing is the same as the device on the left side, and when a sample such as CdZnTe is placed in the sample chamber 13 and the substrate portion is moved to the left or right, a single quantum well structure CdZnTe / CdTe / CdZnTe on GaAs, or a superlattice thereof is grown. It can be effective.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930014733U KR960003467Y1 (en) | 1993-07-29 | 1993-07-29 | Apparatus for sheltering of radiation of machine for growing crystal-layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930014733U KR960003467Y1 (en) | 1993-07-29 | 1993-07-29 | Apparatus for sheltering of radiation of machine for growing crystal-layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950003777U KR950003777U (en) | 1995-02-17 |
| KR960003467Y1 true KR960003467Y1 (en) | 1996-04-24 |
Family
ID=19360476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019930014733U Expired - Fee Related KR960003467Y1 (en) | 1993-07-29 | 1993-07-29 | Apparatus for sheltering of radiation of machine for growing crystal-layer |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR960003467Y1 (en) |
-
1993
- 1993-07-29 KR KR2019930014733U patent/KR960003467Y1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR950003777U (en) | 1995-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4662981A (en) | Method and apparatus for forming crystalline films of compounds | |
| US5514885A (en) | SOI methods and apparatus | |
| US3956032A (en) | Process for fabricating SiC semiconductor devices | |
| US5409867A (en) | Method of producing polycrystalline semiconductor thin film | |
| US5037502A (en) | Process for producing a single-crystal substrate of silicon carbide | |
| Rogalski | New ternary alloy systems for infrared detectors | |
| JP3263964B2 (en) | Crystal for forming semiconductor device and manufacturing method thereof | |
| JP2009520676A (en) | Semiconductor device and manufacturing method thereof | |
| US5279701A (en) | Method for the growth of silicon carbide single crystals | |
| Cook Jr et al. | Molecular‐beam epitaxy of ZnS using an elemental S source | |
| US5492752A (en) | Substrates for the growth of 3C-silicon carbide | |
| KR960003467Y1 (en) | Apparatus for sheltering of radiation of machine for growing crystal-layer | |
| JP3128179B2 (en) | Method for producing n-type silicon carbide single crystal | |
| Huffman et al. | Growth methods for high purity Ge and Ge: Ga homoepitaxy | |
| JPS61243000A (en) | Production of substrate of silicon carbide single crystal | |
| Takeyama et al. | Thin-film single-crystal growth of BiI3 by a hot wall technique | |
| JP2704223B2 (en) | Semiconductor element | |
| Just et al. | Epitaxially grown β-SiC on Si (100) and Si (111) substrates by low pressure chemical vapour deposition | |
| Sitter et al. | Characterization of epitaxial films of CdTe and CdS grown by hot-wall epitaxy | |
| JPS6027699A (en) | Preparation of single crystal film of silicon carbide | |
| Norton et al. | Spatially selective photochemical vapor deposition of GaAs on synthetic fused silica | |
| JP3633186B2 (en) | Method for producing II-VI compound semiconductor film containing zinc | |
| JPS60264399A (en) | Production of single crystal of silicon carbide | |
| JP2753832B2 (en) | III-V Vapor Phase Growth of Group V Compound Semiconductor | |
| JPS62196815A (en) | Thin-film growth device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| UA0108 | Application for utility model registration |
Comment text: Application for Utility Model Registration Patent event code: UA01011R08D Patent event date: 19930729 |
|
| UA0201 | Request for examination |
Patent event date: 19930729 Patent event code: UA02012R01D Comment text: Request for Examination of Application |
|
| UG1501 | Laying open of application | ||
| UG1604 | Publication of application |
Patent event code: UG16041S01I Comment text: Decision on Publication of Application Patent event date: 19960329 |
|
| E701 | Decision to grant or registration of patent right | ||
| UE0701 | Decision of registration |
Patent event date: 19960723 Comment text: Decision to Grant Registration Patent event code: UE07011S01D |
|
| REGI | Registration of establishment | ||
| UR0701 | Registration of establishment |
Patent event date: 19961022 Patent event code: UR07011E01D Comment text: Registration of Establishment |
|
| UR1002 | Payment of registration fee |
Start annual number: 1 End annual number: 3 Payment date: 19961022 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| UC1903 | Unpaid annual fee |