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KR960001463Y1 - ñíñTYPE SUPPORT PIN FOR PREVENTING WAFER DAMAGE - Google Patents

ñíñTYPE SUPPORT PIN FOR PREVENTING WAFER DAMAGE Download PDF

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Publication number
KR960001463Y1
KR960001463Y1 KR92016310U KR920016310U KR960001463Y1 KR 960001463 Y1 KR960001463 Y1 KR 960001463Y1 KR 92016310 U KR92016310 U KR 92016310U KR 920016310 U KR920016310 U KR 920016310U KR 960001463 Y1 KR960001463 Y1 KR 960001463Y1
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South Korea
Prior art keywords
wafer
pin
support pin
memory
disk
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KR92016310U
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Korean (ko)
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KR940006484U (en
Inventor
박병준
이성덕
전석표
정창열
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김주용
현대전자산업 주식회사
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

내용 없음.No content.

Description

고속 회전 이온 주입시 웨이퍼 파손 방지를 위한 기억자형 웨이퍼 지지핀Memory wafer support pin to prevent wafer breakage during high-speed rotary ion implantation

제 1 도는 이온 주입기의 전체 구성도1 is a schematic diagram of an ion implanter

제 2 도는 종래의 웨이퍼 지지 핀의 구성도2 is a block diagram of a conventional wafer support pin

제 3 도는 본 고안에 따른 웨이퍼 지지 핀의 구성도3 is a block diagram of a wafer support pin according to the present invention

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

l : 주플레이트 2 : 입력 카세트 플레이트l: Main plate 2: Input cassette plate

3 : 플레그 어라인어 4 : 입력 에어 트랙3: flagline 4: input air track

5 : 입력 이송기 6 : 디스크5: input feeder 6: disc

7 : 웨이퍼 클램프 8 : 출력 에어 트랙7: wafer clamp 8: output air track

9 : 출력 이송기 10 : 출력 카세트 플레이트9: output feeder 10: output cassette plate

11 : 진공척크 12 : 디스크 페더스털11: vacuum chuck 12: disk feather

13 : 내측 핀 14 : 외측 핀13 inner pin 14 outer pin

15 : 흡입관 16 : 웨이퍼15 suction tube 16 wafer

17 : RTV 18 : 기억자 핀17: RTV 18: Memory Pin

본 고안은 고진공하에서 디스크(disk)에 장착된 웨이퍼(wafer)를 고속 회전 이온 주입시 웨이퍼 파손 방지를 위한 기억자형 웨이퍼 지지 핀에 관한 것이다.The present invention relates to a memory-type wafer support pin for preventing wafer breakage during high-speed rotational ion implantation of a wafer mounted on a disk under high vacuum.

일반적인 반도체 공정에서 사용하는 고 전류 이온 주입기는 웨이퍼에 불순물을 일정하게 주입하기 위하여 디스크에 웨이퍼를 장착하고 고속회전을 하면서 강한 에너지 빔(beam)으로 불순물을 주입시킨다.The high current ion implanter used in a general semiconductor process injects impurities into a strong energy beam while mounting the wafer on a disk and rotating at high speed in order to constantly inject impurities into the wafer.

제 1 도를 통하여 불순물 이온 주입기의 전체 구성도를 개략적으로 살펴보면, 도면에서 1은 주플레이트, 2는 입력 카세트 플레이트, 3은 플레그 어라인어, 4는 입력 에어 트랙, 5는 입력 이송기, 6은 디스크, 7은 웨이퍼클램프, 8은 출력 에어 트랙, 9는 출력 이송기, 10은 출력 카세트 플레이트를 각각 나타낸다.1 shows a schematic diagram of an impurity ion implanter in the drawings, in which 1 is a main plate, 2 is an input cassette plate, 3 is a flag array, 4 is an input air track, 5 is an input feeder, and 6 is Disc, 7 is a wafer clamp, 8 is an output air track, 9 is an output conveyor, and 10 is an output cassette plate.

먼저, 각 구성을 지지하는 주플레이트(1)에 엘리베이트 시스템에 의해 웨이퍼를 이송시킬 수 있도록 웨이퍼를 장착한 입력 카세트 플레이트(2)가 위치하게 되는데, 이 입력 카세트 플레이트(2)에서 이송할 웨이퍼의 방향을 결정하는 플레그 어라인어(flag aligner)(3), 입력 에어 트랙(input air track)(4), 입력 이송기(input transport)(5)에 의해 웨이퍼를 회전 디스크(6)상에 위치한 웨이퍼 클램프(7)에 위치시켜 웨이퍼에 증착 공정을 수행하고 공정이 끝난 웨이퍼를 마찬가지로 출력 에어 트랙(output air track)(8)과 출력 이송기(output transport)(9)를 사용하여 출력 카세트 플레이트(10)에 상기 웨이퍼를 장착한다.First, an input cassette plate 2 on which a wafer is mounted is placed on a main plate 1 supporting each component so that the wafer can be transferred by an elevator system. The wafer positioned on the rotating disk 6 by means of a flag aligner 3, an input air track 4, and an input transport 5 that determine the orientation. Placed in the clamp (7) to perform a deposition process on the wafer and the finished wafer is similarly output cassette plate (10) using an output air track (8) and an output transport (9) ) To the wafer.

그리고 상기 제 1 도의 웨이퍼를 웨이퍼 클램프(7)에 올려 놓거나 떼어내기 위해서는 진공척크로 웨이퍼를 흡착하여 이동시키게 된다.In order to place or remove the wafer of FIG. 1 onto the wafer clamp 7, the wafer is sucked and moved by a vacuum chuck.

상기 이온 주입기에서 사용되는 종래의 웨이퍼 이송을 제 2 도를 통하여 상세히 설명하면, 도면에서 11은 진공척크, 12는 디스크 페더스털, l3은 내측 핀, 14는 외측 핀, 15는 흡입관, 16은 웨이퍼, 17은 RTV, 18은 기억자 핀을 각각 나타낸다.Conventional wafer transfer used in the ion implanter will be described in detail with reference to FIG. 2, in the drawing, 11 is a vacuum chuck, 12 is a disk feather, l3 is an inner fin, 14 is an outer fin, 15 is a suction tube, and 16 is a wafer. , 17 are RTV, and 18 are memory pins, respectively.

먼저, 도면에서 알 수 있듯이 진공척크(11)는 흡입관(15)를 통하여 웨이퍼(16)를 홀딩(holding)하여 상기 제 1 도의 웨이퍼 클램프(7) 즉 제 2 도의 디스크 페더스털(disk pedestal)(12) 놓게 된다. 그런데 상기 디스크페더스털(12)상에는 고속 회전하는 디스크(6)에서 웨이퍼(16)를 정위치에서 고정되도록 하는 접착성 RTV(Room Temperature Volcanizing)(17)와 내측 핀(13) 및 외측 핀(14)이 형성되어 있어 상기 외측핀(14)이 웨이퍼(16)를 고정시키게 된다.First, as can be seen in the drawing, the vacuum chuck 11 holds the wafer 16 through the suction pipe 15 to hold the wafer clamp 7 of FIG. 1, that is, the disk pedestal of FIG. 12) It is released. However, on the disk feather 12, an adhesive room temperature volcanizing (RTV) 17, an inner fin 13, and an outer fin 14 for fixing the wafer 16 in place on the disk 6 rotating at high speed. ) Is formed so that the outer pin 14 fixes the wafer 16.

그러나 상기 종래의 웨이퍼 고정 수단에서의 RTV는 웨이퍼를 진공 펌프로 흡입하여 회전하는 디스크상에서 고정을 시키게 되는데 이 RTV는 장시간 사용하게 되면 노화되어 웨이퍼가 디스크에서 떨어져 나와 미세한 조각으로 변하여 다른 웨이퍼 뿐만 아니라 고가의 디스크를 요염시키는 문제점이 있었다.However, the RTV in the conventional wafer holding means sucks the wafer with a vacuum pump to fix it on a rotating disk. The RTV ages after a long time of use, and the wafer comes off the disk and turns into fine pieces, which is expensive as well as other wafers. There was a problem that bewitched the disk.

상기 문제점을 해결하기 위하여 안출된 본 고안은 고속 회전하는 디스크에 의해 웨이퍼가 디스크 페더스털내에서 떨어져 나오지 않도록 하는 고속 회전 이온 주입시 웨이퍼 파손 방지를 위한 기억자형 웨이퍼 지지 핀을 제공하는데 그 목적이 있다.The present invention devised to solve the above problems is to provide a memory-type wafer support pin for preventing wafer breakage during high-speed rotational ion implantation that prevents the wafer from falling out in the disk feather by the high-speed rotating disk.

따라서 상기 목적을 달성하기 위하여 본 고안은 진공척크(11)에 의해 이송된 웨이퍼를 고정시키기 위한 디스크 페더스털, 상기 디스크 페더스털 상에 위치한 RTV와 내측 핀 및 외측 핀을 갖는 고속 회전 이온 주입시 웨이퍼 파손 방지를 위한 기억자형 웨이퍼 지지 핀에 있어서, 상기 외측 핀은 웨이퍼가 놓인 쪽으로 돌출부를 형성하여 이루어진 기억자 핀인 것을 특징으로 한다.Therefore, in order to achieve the above object, the present invention provides a disk federtal for fixing the wafer transferred by the vacuum chuck 11, a wafer during high-speed rotational ion implantation having an RTV and an inner pin and an outer pin located on the disk fedster. The memory-type wafer support pin for preventing damage, wherein the outer pin is a memory pin formed by forming a protrusion toward the wafer.

이하, 첨부된 도면 제 3 도를 참조하여 본 고안에 따른 일실시예를 상세히 설명하면, 도면에서 18은 기억자 핀을 나타낸다.Hereinafter, an embodiment according to the present invention will be described in detail with reference to FIG. 3 of the accompanying drawings. In the drawings, 18 denotes a memory pin.

종래의 웨이퍼(16) 이탈을 방지하는 외측핀(14)을 웨이퍼(16)가 놓인 쪽으로 돌출부를 형성하여 기억자 핀(18)을 형성한다.A memory pin 18 is formed by forming a protruding portion toward the wafer 16 on which the outer pin 14 which prevents the conventional wafer 16 from being separated.

상기와 같이 이루어지는 본 고안은 간단한 핀의 구성을 이루어 웨이퍼 이탈시 발생하게 되는 돌발 사고를 방지할 수 있어 장비의 가동율과 생산량 증가에 크게 기여할 수 있는 효과가 있다.The present invention made as described above has the effect of making a simple pin configuration to prevent the accident that occurs when leaving the wafer can greatly contribute to the increase in the operation rate and output of the equipment.

Claims (1)

진공척크(11)에 의해 이송된 웨이퍼(16)를 고정시키기 위한 디스크 페더스털(12), 상기 디스크 페더스털(12) 상에 위치한 RTV(17)와 내측 핀(13) 및 외측 핀(14)을 갖는 고속 회전 이온 주입시 웨이퍼 파손 방지를 위한 기억자형 웨이퍼 지지 핀에 있어서,Disc feather 12 for holding wafer 16 transferred by vacuum chuck 11, RTV 17 and inner pin 13 and outer pin 14 located on the disk feather 12. In the memory-type wafer support pin for preventing wafer breakage during high-speed rotary ion implantation having a 상기 외측 팬(14)은 웨이퍼(16)가 놓인 쪽으로 돌출부를 형성하여 이루어진 기억자 핀(18)인 것을 특징으로 하는 고속 회전 이온 주입시 웨이퍼 파손 방지를 위한 기억자형 웨이퍼 지지 핀.The outer fan (14) is a memory wafer support pin for preventing wafer breakage during high-speed rotational ion implantation, characterized in that the memory pin (18) formed by forming a protrusion toward the wafer (16).
KR92016310U 1992-08-28 1992-08-28 ñíñTYPE SUPPORT PIN FOR PREVENTING WAFER DAMAGE Expired - Lifetime KR960001463Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR92016310U KR960001463Y1 (en) 1992-08-28 1992-08-28 ñíñTYPE SUPPORT PIN FOR PREVENTING WAFER DAMAGE

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Application Number Priority Date Filing Date Title
KR92016310U KR960001463Y1 (en) 1992-08-28 1992-08-28 ñíñTYPE SUPPORT PIN FOR PREVENTING WAFER DAMAGE

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KR940006484U KR940006484U (en) 1994-03-25
KR960001463Y1 true KR960001463Y1 (en) 1996-02-17

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KR92016310U Expired - Lifetime KR960001463Y1 (en) 1992-08-28 1992-08-28 ñíñTYPE SUPPORT PIN FOR PREVENTING WAFER DAMAGE

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KR102609193B1 (en) * 2022-04-14 2023-12-01 최영이 Door handle fixing system

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