KR950015758A - LC device, semiconductor device and LC device manufacturing method - Google Patents

Abstract

The present invention relates to an LC device, a semiconductor device, and a method for manufacturing an LC device, which can be assembled to a semiconductor device or the like or to reduce a predetermined frequency band by a single agent. And a second electrode having a predetermined shape formed directly on the surface of the semiconductor substrate so as to be formed as part of an IC or LSI and a first electrode having a predetermined shape formed with an insulating layer interposed on the surface of the semiconductor substrate. And a channel and a second electrode formed according to the first electrode when the predetermined gate voltage is applied to the control electrode connected to the first electrode, respectively functioning as inductors, and distribution constant therebetween. Capacitively, a capacitor is formed and configured by using a channel as a signal transmission path.

By using this LC element and a semiconductor device, manufacture is simple, the assembly work of components in a later process can be omitted, it can be formed as a part of IC or LSI, and control of a characteristic is also possible.

Description

LC device, semiconductor device and LC device manufacturing method

Since this is an open matter, no full text was included.

1 is a plan view of an LC element of a first embodiment to which the present invention is applied;

2A and 2B are enlarged cross-sectional views taken along line A-A of FIG. 1,

3 is an enlarged cross-sectional view taken along line B-B of FIG. 1,

4 is an enlarged cross-sectional view taken along the line C-C in FIG.

5 is an enlarged cross-sectional view taken along the line D-D of FIG. 1,

6 shows a cross-sectional structure in the longitudinal direction of the LC element of the first embodiment;

7A, 7B and 7C show an equivalent circuit of the LC element of the first embodiment,

8 and 8 are diagrams for explaining the resistance of the channel;

9A to 9G show a manufacturing process of the LC element of the first embodiment;

10 is a view showing a modification of the LC element of the first embodiment;

11 is a view showing a modification of the LC element of the first embodiment.

Claims (69)

A single layer of either the n region or the p region is formed on the surface of the semiconductor substrate, the first electrode formed on the semiconductor substrate via an insulating layer, and functions as a gate having a predetermined shape, and the first electrode. A second electrode having a predetermined shape formed on the semiconductor substrate in substantially the same plane and parallel to each other, and a first formed near one end of a channel formed in the semiconductor substrate corresponding to the first electrode. And an inductor formed by the channel and each of the second and capacitors formed therebetween, each having a diffusion region of the semiconductor substrate and a second diffusion region formed near the other end of the channel in the semiconductor substrate. And an at least one channel formed corresponding to the first electrode as a signal transmission path. The LC device according to claim 1, wherein the first and second electrodes have a spiral shape. The LC device according to claim 1, wherein the first and second electrodes are meandering. The LC device according to claim 1, wherein the first and second electrodes have a curved shape. The LC device according to claim 1, wherein the first and second electrodes have a straight shape. A predetermined first electrode which is formed on one side of the semiconductor substrate via an insulating layer and functions as a gate, and is formed on the other side of the semiconductor substrate and formed at a position opposite to the first electrode. A second electrode having a shape, a first diffusion region formed near one end of a channel formed corresponding to the first electrode in the semiconductor substrate, and near the other end of the channel in the semiconductor substrate; A second diffusion region formed, a channel formed corresponding to the first electrode, an inductor formed by each of the second electrodes, and a capacitor formed therebetween, And at least a channel formed corresponding to the first electrode as a signal transmission path. 7. The LC device according to claim 6, wherein the first and second electrodes have a spiral shape. 7. The LC device according to claim 6, wherein the first and second electrodes are meandering. 7. An LC element according to claim 6, wherein the first and second electrodes have a curved shape. 7. The LC device according to claim 6, wherein the first and second electrodes have a straight shape. A single layer of either the n region or the p region is formed on the surface of the semiconductor substrate, the first electrode having a predetermined shape, which is formed on the semiconductor substrate via an insulating layer and functions as a gate, and the first electrode. A second electrode having a predetermined shape formed on the semiconductor substrate in parallel with the same plane in the same plane, and a diffusion region formed near one end of a channel formed in the semiconductor substrate corresponding to the first electrode. And an inductor formed by each of the channel and the second electrode and a capacitor formed therebetween are distributed in an integer number, and the second electrode is used as a signal transmission path. 12. The LC element according to claim 11, wherein the first and second electrodes are always spiral. The LC device according to claim 11, wherein the first and second electrodes are meandering. The LC device according to claim 11, wherein the first and second electrodes have a curved shape. 12. The LC device according to claim 11, wherein the first and second electrodes have a straight shape. A first electrode having a predetermined shape formed on one side of the semiconductor substrate via an insulating layer and serving as a gate, and formed on the other side of the semiconductor substrate and formed at a position facing the first electrode; A channel formed in correspondence with the first electrode and having a diffusion region formed near one end of a channel formed in correspondence with the first electrode in the second electrode having the shape and the semiconductor substrate; And an inductor formed by each of the second electrodes and a capacitor formed therebetween are distributed in an integer number, and the second electrode is used as a signal transmission path. 17. The LC device according to claim 16, wherein the first and second electrodes have a spiral shape. 17. The LC device according to claim 16, wherein the first and second electrodes are meandering. The LC device according to claim 16, wherein the first and second electrodes have a curved shape. 17. The LC device according to claim 16, wherein the first and second electrodes are always linear. The LC device according to any one of claims 1 to 5, wherein a semiconductor substrate having an inversion layer composed of an n region or a p region is formed in accordance with the first and second electrodes instead of the semiconductor substrate. . The inversion of any one of Claims 6-10 which consists of n area | regions or p area | regions between the conductor parts which the said 1st electrode adjoins, and between the conductor parts which the 2nd electrode adjoins, instead of the said semiconductor substrate. An LC device comprising a layered semiconductor substrate. The LC device according to any one of claims 11 to 15, wherein a semiconductor substrate having an inversion layer composed of n regions or p regions is formed in accordance with the first and second electrodes instead of the semiconductor substrate. The inversion according to any one of claims 16 to 20, wherein in place of the semiconductor substrate, n or p regions are formed between conductor portions adjacent to the first electrode and conductor portions adjacent to the second electrode. An LC device comprising a layered semiconductor substrate. The electronic device according to any one of claims 1 to 10, wherein the first and second input / output electrodes electrically connected to the first and second diffusion regions and one end of the second electrode are electrically connected. LC having a grounded electrode, wherein the signal is input to either one of the first and second input / output electrodes, the signal is output to the other, and the ground electrode is connected or grounded to a power source having a fixed potential. device. 22. The device of claim 21, further comprising first and second input / output electrodes electrically connected to the first and second diffusion regions, and a ground electrode electrically connected to one end of the second electrode. And a signal is input from either one of the first and second input / output electrodes, the signal is output from the other, and the ground electrode is connected or grounded to a power source having a fixed potential. 23. The device of claim 22, further comprising: first and second input / output electrodes electrically connected to the first and second diffusion regions, and a ground electrode electrically connected to one end of the second electrode. And a signal is input from either one of the first and second input / output electrodes, the signal is output from the other, and the ground electrode is connected or grounded to a power source having a fixed potential. The first and second input and output electrodes electrically connected to one end and the other end of the second electrode, and the first electrode or the first electrode are divided according to any one of claims 11 to 20. A ground electrode electrically connected to said diffusion region formed near one end of a channel formed corresponding to one electrode portion, and inputs a signal at either one of said first and second input / output electrodes, and at the other LC output, characterized in that for connecting or grounding the ground electrode to a power supply of a fixed potential at the same time. 24. The first and second input and output electrodes electrically connected to one end and the other end of the second electrode, and the electrode portion dividing the first electrode or the first electrode. A ground electrode electrically connected to the diffusion region formed near one end of the channel to be formed, and inputs a signal from one of the first and second input / output electrodes, and outputs a signal from the other An LC element characterized by connecting or grounding the ground electrode to a power source having a fixed potential. 25. The method according to claim 24, wherein the first and second input / output electrodes electrically connected to one end and the other end of the second electrode, and the electrode portion obtained by dividing the first electrode or the first electrode. A ground electrode electrically connected to the diffusion region formed near one end of the channel to be formed, and inputs a signal from either one of the first and second input / output electrodes, outputs a signal from the other side, and simultaneously An LC element, characterized in that the electrode is connected or grounded to a power source with a fixed potential. The electronic device according to any one of claims 1 to 10, wherein the first and second input / output electrodes electrically connected to the first and second diffusion regions, and one end and the other end of the second electrode are electrically connected. And third and fourth input / output electrodes connected to each other, and are used as elements of a common mode terminology, wherein both the channel formed corresponding to the first electrode and the second electrode are used as signal transmission paths. LC element. 22. The device of claim 21, wherein the first and second input / output electrodes electrically connected to the first and second diffusion regions, and the third and fourth input / output electrically connected to one end of the second electrode. An LC element having an electrode and used as a common mode element having both a channel formed corresponding to the first electrode and the second electrode as signal transmission. 23. The device of claim 22, wherein the first and second input / output electrodes electrically connected to the first and second diffusion regions, and the third and fourth electrically connected to one end and the other end of the second electrode. And an input / output electrode of which is used as a common mode element in which both a channel formed corresponding to the first electrode and the second electrode serve as signal transmission. The method according to any one of claims 1 to 10, wherein only the channel is used as a signal transmission path, the second electrode is divided into a plurality, and each of the divided plurality of electrode portions is electrically connected to each other. LC element. 27. The LC device according to claim 25, wherein only the channel is used as a signal transmission path, the second electrode is divided into a plurality, and each of the divided plurality of electrode portions is electrically connected to each other. The said 1st electrode is divided into many, and the diffusion area is provided in the vicinity of one end of each of the several channel formed corresponding to each of the divided several electrode part. And a plurality of diffusion regions are electrically connected to each other. 29. The apparatus of claim 28, wherein the first electrode is divided into a plurality of diffusion regions, and diffusion regions are provided near one end of each of the plurality of channels formed corresponding to each of the divided plurality of electrode portions. LC element, characterized in that for electrically connecting. The LC element according to any one of claims 1 to 20, wherein the resistance value of the channel is variably controlled by setting the gate voltage applied to the first electrode to be variable. The LC device according to claim 25, wherein the resistance value of the channel is variably controlled by setting the gate voltage applied to the first electrode to be variable. The LC device according to claim 28, wherein the resistance value of the channel is variably controlled by setting the gate voltage applied to the first electrode to be variable. 32. The LC device according to claim 31, wherein the resistance value of the channel is variably controlled by setting the gate voltage applied to the first electrode to be variable. The LC device according to any one of claims 1 to 20, wherein a carrier is previously injected into a position corresponding to the first electrode near the surface of the semiconductor substrate. 27. The LC device according to claim 25, wherein carriers are previously injected into positions corresponding to the first electrodes near the surface of the semiconductor substrate. 29. The LC device according to claim 28, wherein the carrier is injected in advance in a position corresponding to the first electrode near the surface of the semiconductor substrate. 32. An LC element as claimed in claim 31, wherein carriers are pre-injected at positions corresponding to the first electrodes near the surface of the semiconductor substrate. The method according to any one of claims 1 to 20, wherein the channel and the second electrode are partially corresponded by setting the length of the second electrode to be long or short with respect to the first electrode. LC element. 27. The LC device according to claim 25, wherein the channel and the second electrode are partially corresponded by setting the length of the second electrode to be long or short with respect to the first electrode. 29. The LC device according to claim 28, wherein the channel and the second electrode are partially corresponded by setting the length of the second electrode to be long or short with respect to the first electrode. 32. The LC device according to claim 31, wherein the channel and the second electrode are partially corresponded by setting the length of the second electrode to be long or short with respect to the first electrode. The LC element according to any one of claims 1 to 20, wherein a buffer is connected to an output side of the signal transmission path. The LC element according to claim 25, wherein a buffer is connected to an output side of the signal transmission path. 29. The LC device according to claim 28, wherein a buffer is placed on the output side of the signal transmission path. 32. The LC element according to claim 31, wherein a buffer is connected to an output side of the signal transmission soil. The LC device according to any one of claims 1 to 20, wherein at least said first electrode is provided with a protection circuit for bypassing an overvoltage to an operation power supply line side or a ground side. The LC device according to claim 25, wherein at least said first electrode is provided with a protection circuit for bypassing an overvoltage to an operation power supply line side or a ground side. 29. The LC element according to claim 28, wherein at least said first electrode is provided with a protection circuit for bypassing an overvoltage to an operation power supply line side or a ground side. 32. The LC element according to claim 31, wherein at least said first electrode is provided with a protection circuit for bypassing an overvoltage to an operation power supply line side or a ground side. The film according to any one of claims 1 to 20, wherein an insulating film is formed on the entire surface, a portion of the insulating film is removed by etching or laser light irradiation, and the hole is drilled, and the hole is sealed so that the surface rises with solder. LC element characterized in that the terminal is attached. A terminal is formed by forming an insulating film on the entire surface, removing a portion of the insulating film by etching or laser light irradiation to drill a hole, and sealing the hole so that the surface rises with solder. LC element, characterized in that. A terminal is formed by forming an insulating film on the entire surface, removing a portion of the insulating film by etching or laser light irradiation to drill a hole, and sealing the hole so that the surface rises with solder. LC element, characterized in that. The terminal is formed by forming an insulating film on the entire surface, removing a portion of the insulating film by etching or laser light irradiation to drill a hole, and sealing the hole so that the surface rises with solder. LC element, characterized in that. 21. An LC element according to any one of claims 1 to 20 is formed as a part of a substrate, and at least one of the channel and the second electrode formed corresponding to the first electrode is inserted into a signal line or a power line to form an integrated body. A semiconductor device comprising one. A semiconductor device comprising the LC element of claim 25 formed as a part of a substrate and integrally formed by inserting at least one of a channel and a second electrode formed corresponding to the first electrode into a signal line or a power line. The semiconductor device according to claim 28, wherein the LC element is formed as a part of a substrate, and at least one of the channel and the second electrode formed corresponding to the first electrode is inserted into a signal line or a power line to be integrally formed. . A semiconductor device comprising the LC element of claim 31 formed as part of a substrate, and integrally formed by inserting at least one of a channel and a second electrode formed corresponding to the first electrode into a signal line or a power line. . A first step of forming first and second diffusion regions by partially injecting impurities into a semiconductor substrate, and forming an insulating layer on the entire surface or partially on the semiconductor substrate and simultaneously forming the first and second diffusion regions. A second process of forming a helical first electrode in a substantially parallel and adjacent position along the first electrode so as to connect the diffusion regions, respectively; and the first and second diffusion regions; And a third step of forming a wiring layer electrically connected to each of said first and second electrodes. A first step of forming first and second diffusion regions by partially injecting impurities into a semiconductor substrate, and forming an insulating layer on the entire surface or partially on the semiconductor substrate and simultaneously forming the first and second diffusion regions. A second process of forming a helical first electrode in a substantially parallel and adjacent position along the first electrode so as to connect the diffusion regions, respectively; and the first and second diffusion regions; And a third step of forming a wiring layer electrically connected to each of said first and second electrodes. A first step of forming first and second diffusion regions by partially injecting impurities into a semiconductor substrate, and forming an insulating layer on the entire surface or partially on the semiconductor substrate and simultaneously forming the first and second diffusion regions. A second process of forming a spiral first electrode in a substantially parallel and adjacent position along the first electrode to connect the diffusion regions, respectively; and the first and second diffusion regions And a third step of forming a wiring layer electrically connected to each of the first and second electrodes. A first step of forming first and second diffusion regions by partially injecting impurities into a semiconductor substrate, and forming an insulating layer on the entire surface or partially on the semiconductor substrate and simultaneously forming the first and second diffusion regions. A second process of forming a spiral first electrode and a meandering second electrode in a substantially parallel and adjacent position along the first electrode so as to connect the diffusion regions, and the first and second diffusion regions And a third step of forming a wiring layer connected to each of said first and second electrodes on a dry basis. ※ Note: The disclosure is based on the initial application.