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KR950015742A - High Voltage Detection Circuit of Semiconductor Integrated Circuits - Google Patents

High Voltage Detection Circuit of Semiconductor Integrated Circuits Download PDF

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Publication number
KR950015742A
KR950015742A KR1019930023599A KR930023599A KR950015742A KR 950015742 A KR950015742 A KR 950015742A KR 1019930023599 A KR1019930023599 A KR 1019930023599A KR 930023599 A KR930023599 A KR 930023599A KR 950015742 A KR950015742 A KR 950015742A
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South Korea
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high voltage
output signal
voltage
terminal
voltage terminal
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KR1019930023599A
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Korean (ko)
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KR970010650B1 (en
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김치욱
김문곤
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김광호
삼성전자 주식회사
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Dram (AREA)

Abstract

본 발명은 반도체 집적회로에서 특히 공급되는 고전압이 소망의 레벨로 될시에 이를 정확하게 검출하는 고전압 검출회로에 관한 것으로, 본 발명에 의한 고전압 검출회로는, 미리 예정된 고전압이 인가되는 고전압단자와, 상기 고전압단자에 접속되고 상기 고전압단자에 인가되는 전압레벨이 상기 예정된 값으로 될시에 출력신호를 활성하시키는 바이어스부와, 상기 고전압단자에 접속되고 상기 바이어스부의 출력신호와 소정의 기준신호를 각각 입력하여 이를 비교하고 상기 바이어스부의 출력신호가 상기 기준 신호보다 전압레벨이 더 높을 시에 출력신호를 활성화시키는 전압레벨 비교기와, 상기 고전압단자에 접속되고 상기 전압레벨비교기의 출력신호를 입력하여 이 신호의 스윙레벨을 증폭시키는 전압보상부와, 상기 전압보상부의 출력신호에 응답하여 승압전압을 출력하는 레벨변환부를 구비하는 구성을 개시하고 있다. 이로부터 본 발명은 소망의 고전압이 공급될 시에만 이를 정확하게 검출하는 고전압 검출회로를 제공할 수 있게 된다. 또한 고전압이 필요로 되는 모드를 수행함에 있어서 칩의 오동작에 의해 발생되는 칩의 신뢰성 저하문제를 해결할 수 있다.The present invention relates to a high voltage detection circuit that accurately detects a high voltage supplied from a semiconductor integrated circuit, when the desired level becomes a desired level. The high voltage detection circuit according to the present invention includes a high voltage terminal to which a predetermined high voltage is applied; A bias unit for activating an output signal when the voltage level connected to the high voltage terminal and applied to the high voltage terminal reaches the predetermined value, and an output signal and a predetermined reference signal connected to the high voltage terminal and respectively input to the bias terminal; A voltage level comparator for activating an output signal when the output signal of the bias unit is higher than the reference signal, and connected to the high voltage terminal and inputting an output signal of the voltage level comparator A voltage compensator for amplifying a swing level and an output signal of the voltage compensator. Disclosed is a configuration including a level converting section for outputting a boosted voltage in response. From this, the present invention can provide a high voltage detection circuit which accurately detects only when a desired high voltage is supplied. In addition, in performing a mode requiring high voltage, a problem of deterioration of chip reliability caused by chip malfunction may be solved.

Description

반도체집적회로의 고전압 검출회로High voltage detection circuit of semiconductor integrated circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 고전압 검출회로의 실시예를 보여주는 회로도2 is a circuit diagram showing an embodiment of a high voltage detection circuit according to the present invention.

Claims (5)

반도체집적회로의 고전압 검출회로에 있어서, 미리 예정된 고전압이 인가되는 고전압단자와, 상기 고전압단자에 접속되고 상기 고전압단자에 인가되는 전압레벨이 상기 예정된 값으로 될시에 출력신호를 활성화시키는 바이어스부와, 상기 고전압단자에 접속되고 상기 바이어스부의 출력신호와 소정의 기준신호를 각각 입력하여 이를 비교하여 상기 바이어스부의 출력신호가 상기 기준신호보다 전압레벨이 더 높을 시에 출력신호를 활성화시키는 전압레벨비교기와, 상기 고전압단자에 접속되고 상기 전압레벨비교기의 출력신호를 입력하여 이 신호의 스윙레벨을 증폭시키는 전압보상부와, 상기 전압보상부의 출력신호에 응답하여 승압전압을 출력하는 레벨변환부를 구비함을 특징으로 하는 고전압 검출회로.A high voltage detection circuit of a semiconductor integrated circuit, comprising: a high voltage terminal to which a predetermined high voltage is applied; a bias unit to activate an output signal when a voltage level connected to the high voltage terminal and applied to the high voltage terminal reaches the predetermined value; And a voltage level comparator connected to the high voltage terminal and inputting an output signal of the bias unit and a predetermined reference signal, respectively, and comparing them to activate the output signal when the output signal of the bias unit is higher than the reference signal. And a voltage compensator connected to the high voltage terminal and inputting an output signal of the voltage level comparator to amplify a swing level of the signal, and a level converter for outputting a boosted voltage in response to the output signal of the voltage compensator. High voltage detection circuit characterized in. 제1항에 있어서, 상기 바이어스부가, 상기 고전압단자와 출력노드와의 사이에 채널이 직렬로 연결되는 다수개의 전압강하소자와, 상기 출력노드와 접지전압단과의 사이에 접속된 풀다운트랜지스터로 이루어짐을 특징으로 하는 고전압 검출회로.The method of claim 1, wherein the bias unit comprises a plurality of voltage drop elements having a channel connected in series between the high voltage terminal and the output node, and a pull-down transistor connected between the output node and the ground voltage terminal. High voltage detection circuit characterized in. 제1항에 있어서, 상기 전압레벨비교기가, 상기 고전압단자와 접속노드와의 사이에 접속된 저항소자와, 상기 접속노드를 통해 공급되는 전원을 소오스전원으로 하고 상기 바이어스부의 출력신호와 기준전압신호를 각각 입력비교하는 차동증폭기로 이루어짐을 특징으로 하는 고전압 검출회로.The output voltage and the reference voltage signal of claim 1, wherein the voltage level comparator comprises a resistance element connected between the high voltage terminal and a connection node, and a power source supplied through the connection node as a source power source. A high voltage detection circuit comprising a differential amplifier for comparing the respective inputs. 제1항에 있어서, 상기 전압보상부가, 상기 고전압단자와 접속노드와의 사이에 채널이 직렬연결되고 상기 전압레벨비교기의 출력신호를 공통으로 게이트입력하는 다수개의 풀엎용트랜지스터와, 상기 접속노드와 접지전압단과의 사이에 채널이 서로 직렬로 연결되고 상기 전압레벨비교기의 출력신호를 공통으로 게이트 입력하는 다수개의 풀다운용트랜지스터와, 상기 접속노드에 입력단자가 연결되고 상기 고전압단자와 접지 전압단과의 사이에 전류통로가 형성되어 전압보상부의 출력신호를 출력하는 씨모오스인버터로 이루어짐을 특징으로 하는 고전압 검출회로.The plurality of pull-down transistors of claim 1, wherein the voltage compensator has a channel connected in series between the high voltage terminal and the connection node, and gate-inputs the output signal of the voltage level comparator in common. A plurality of pull-down transistors having channels connected in series with each other between the ground voltage terminals and a gate input of the output signal of the voltage level comparator in common; an input terminal is connected to the connection node, and the high voltage terminal and the ground voltage terminal A high voltage detection circuit comprising a current inverter is formed between the CMOS inverter to output the output signal of the voltage compensation unit. 제1항에 있어서, 상기 레벨변환부가, 상기 고전압단자와 접지전압단과의 사이에 형성되고 상기 전압보상부의 출력신호에 의해 구동되는 래치회로와, 상기 고전압단자와 접지전압단과의 사이에 형성되고 상기 래치회로의 출력신호를 증폭하는 드라이버회로로 이루어짐을 특징으로 하는 고전압 검출회로.2. The latch circuit of claim 1, wherein the level converter is formed between the high voltage terminal and the ground voltage terminal and is driven between the high voltage terminal and the ground voltage terminal. A high voltage detection circuit comprising a driver circuit for amplifying an output signal of a latch circuit. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930023599A 1993-11-08 1993-11-08 High voltage detection circuit of semiconductor integrated circuit KR970010650B1 (en)

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Application Number Priority Date Filing Date Title
KR1019930023599A KR970010650B1 (en) 1993-11-08 1993-11-08 High voltage detection circuit of semiconductor integrated circuit

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KR950015742A true KR950015742A (en) 1995-06-17
KR970010650B1 KR970010650B1 (en) 1997-06-28

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100449177B1 (en) * 1997-12-30 2005-01-13 주식회사 하이닉스반도체 High voltage detection circuit
KR100475896B1 (en) * 1997-12-12 2005-07-18 주식회사 하이닉스반도체 High Voltage Regulation Circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100475896B1 (en) * 1997-12-12 2005-07-18 주식회사 하이닉스반도체 High Voltage Regulation Circuit
KR100449177B1 (en) * 1997-12-30 2005-01-13 주식회사 하이닉스반도체 High voltage detection circuit

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