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KR950013390B1 - Auto control circuit of optical power - Google Patents

Auto control circuit of optical power Download PDF

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Publication number
KR950013390B1
KR950013390B1 KR1019930014149A KR930014149A KR950013390B1 KR 950013390 B1 KR950013390 B1 KR 950013390B1 KR 1019930014149 A KR1019930014149 A KR 1019930014149A KR 930014149 A KR930014149 A KR 930014149A KR 950013390 B1 KR950013390 B1 KR 950013390B1
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light
output
transistor
light emitting
control circuit
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KR950004122A (en
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김연옥
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대우전자주식회사
배순훈
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/126Circuits, methods or arrangements for laser control or stabilisation

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)

Abstract

내용 없음.No content.

Description

광출력 자동제어회로Light output automatic control circuit

제 1 도는 종래의 광출력회로의 일예를 나타낸 회로도.1 is a circuit diagram showing an example of a conventional optical output circuit.

제 2 도는 본 발명에 따른 광출력 자동제어회로를 나타낸 회로도이다.2 is a circuit diagram showing a light output automatic control circuit according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

A20 : 비교기 LD20 : 발광다이오드(발광소자)A20: comparator LD20: light emitting diode (light emitting device)

PT20 : 수광소자 Vref : 기준전압PT20: light receiving element Vref: reference voltage

Q20, Q22 : 제 1 및 제 2 트랜지스터.Q20, Q22: first and second transistors.

본 발명은 광출력 자동제어회로에 관한 것으로, 보다 상세하게는 데이터 독취를 광픽업장치에 적용되어 정보기록매체의 광디스크부터 정보를 독취하기 위한 광비임을 방사하는 레이저다이오드의 출력광량을 자동으로 제어하도록 된 광출력 자동제어회로에 관한 것이다.The present invention relates to a light output automatic control circuit, and more particularly, data reading is applied to an optical pickup device to automatically control an output light amount of a laser diode emitting a light beam for reading information from an optical disk of an information recording medium. It relates to a light output automatic control circuit.

일반적으로, 대규모 정보기록장치로서 적용되는 하드디스크드라이브라든지 레이저디스크 드라이브에는 광비임발생을 위한 레이저발광수단이 갖추어진 광픽업장치가 채용되어 그 레이저발광수단에서 발생된 광비임을 디스크를 향해 조사하고 그 디스크에서 반사되는 반사광을 후처리하여 데이터의 재생을 수행하게 된다.In general, a hard disk drive or a laser disk drive applied as a large-scale information recording apparatus employs an optical pickup device equipped with a laser light emitting means for generating a light beam, and irradiates the light beam generated by the laser light emitting means toward the disk. The reflected light reflected from the disk is post-processed to perform data reproduction.

제 1 도는 그러한 광비임의 발생을 위한 광출력회로의 예시적인 구성을 나타낸 회로도로서, 저항(R1)을 매개하여 인가되는 광비임발생신호에 의해 스위칭되는 제 1 트랜지스터(Q1)와, 이 제 1 트랜지스터(Q1)의 컬렉터에 베이스가 접속되고 그 컬렉터가 전원(Vcc)에 접속된 제 2 트랜지스터(Q2), 이 제 2 트랜지스터(Q2)의 에미터에 베이스가 접속된 제 3 트랜지스터(Q3) 및, 이 제 3 트랜지스터(Q3)의 컬렉터와 전원(Vcc)사이에 접속된 발광소자로서의 발광다이오드(LD)가 갖추어져 구성된다.FIG. 1 is a circuit diagram showing an exemplary configuration of an optical output circuit for generating such a light beam, and includes a first transistor Q1 switched by an optical beam generation signal applied through a resistor R1, and the first transistor. A second transistor Q2 having a base connected to the collector of Q1 and a collector connected to the power supply Vcc, a third transistor Q3 having a base connected to the emitter of the second transistor Q2, and The light emitting diode LD as a light emitting element connected between the collector of the third transistor Q3 and the power supply Vcc is provided.

이러한 구성을 갖춘 종래의 광출력회로에서는 광비임발생신호가 저항(R1)을 매개하여 제 1 트랜지스터(Q1)의 베이스에 인가되면 그 광비임발생신호에 따라 그 제 1 트랜지스터(Q1)가 스위칭 온/오프되고, 그에 따라 제 2 및 제 3 트랜지스터(Q2, Q3)가 스위칭 오프/온 되므로 발광다이오드(LD)가 광비임을 발생하여 광디스크를 향해 출력하게 된다.In the conventional optical output circuit having such a configuration, when the light beam generation signal is applied to the base of the first transistor Q1 via the resistor R1, the first transistor Q1 is switched on according to the light beam generation signal. Since the second and third transistors Q2 and Q3 are switched off / on accordingly, the light emitting diode LD generates an optical beam and outputs the light beam toward the optical disk.

그런데, 제 1 도에 도시된 광출력회로는 광비임이 도달하는 디스크, 정확하게는 정보기록면의 위치특성에 관계없이 발광다이오드(LD)로부터 출력되는 광출력이 항상 일정하게 되므로 그 발광다이오드(LD)로부터 디스크, 즉 디스크의 정보기록면까지의 거리 또는 위치에 따라 수광소자에 입사되는 광레벨이 다르게 된다.However, since the optical output circuit shown in FIG. 1 has a constant optical output output from the light emitting diode LD regardless of the position characteristic of the disk where the light beam reaches, precisely the information recording surface, the light output diode LD The light level incident on the light receiving element differs depending on the distance or position to the disc, i.e., the information recording surface of the disc.

따라서, 발광다이오드(LD)와 디스크 사이의 거리 또는 위치에 따라 반사되는 광이 다르게 되는 경우에는 기기의 오동작 또는 독출신호에서의 에러가 발생되고, 또한 디스크의 정보기록면의 위치와 거리에 관계없이 항상 일정한 광을 출력하기 때문에 전력손실이 증대된다는 불리함이 있다.Therefore, when the reflected light differs depending on the distance or position between the light emitting diode LD and the disk, a malfunction of the device or an error in the read signal occurs, and regardless of the position and distance of the information recording surface of the disk. There is a disadvantage that the power loss is increased because it always outputs a constant light.

본 발명은 상기한 종래 기술상의 문제점을 해결하기 위한 것으로, 발광다이오드로부터 방사된 광비임이 정보가 기록된 디스크의 반사면을 거쳐 수광소자로 반사되는 광의 크기에 따라 광출력을 자동으로 조절하도록 된 광출력 자동제어회로를 제공함에 그 목적이 있다.The present invention is to solve the above-mentioned problems in the prior art, the light beam emitted from the light emitting diode to automatically adjust the light output according to the size of the light reflected to the light receiving element via the reflective surface of the disk on which the information is recorded The purpose is to provide an output automatic control circuit.

상기한 목적을 달성하기 위해, 본 발명에 따르면 입력전압에 대해 바이어스 저항에 의해 바이어스 형성되어 발광소자를 구동하는 제 1 트랜지스터와, 상기 발광소자로부터의 광비임의 반사광을 수광하는 수광소자에 일단이 접속되고 다른 단에 설정된 기준전압에 의해 수광소자의 출력을 비교하는 비교수단, 이 비교수단의 출력에 의해 베이스바이어스가 형성되어 상기 제 1 트랜지스터의 베이스구동전류를 제어하는 제 2 트랜지스터로 구성된 광출력 자동제어회로가 제공된다.In order to achieve the above object, according to the present invention, one end is connected to a first transistor that is biased by a bias resistor with respect to an input voltage to drive a light emitting element, and a light receiving element that receives light beams reflected from the light emitting element. And a comparison means for comparing the outputs of the light receiving elements with reference voltages set at different stages, and a base bias formed by the output of the comparison means to control the base driving current of the first transistor. A control circuit is provided.

상기한 구성의 본 발명에 따른 광전류 자동제어회로에 의하면, 발광소자에서 방사된 광비임의 반사광이 수광소자에서 검출된 다음 비교수단에서 기준전압과 비교되고, 그 비교출력이 제 2 트랜지스터의 베이스바이어스전압으로 인가되어 제 1 트랜지스터의 베이스구동전류를 제어하게 되므로 발광소자의 광출력이 자동으로 제어된다.According to the photocurrent automatic control circuit according to the present invention having the above-described configuration, the reflected light of the light beam emitted from the light emitting element is detected by the light receiving element and then compared with the reference voltage in the comparison means, and the comparison output is the base bias voltage of the second transistor. Is applied to control the base driving current of the first transistor so that the light output of the light emitting device is automatically controlled.

이하, 본 발명에 대해 첨부도면을 참조하여 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

제 2 도는 본 발명에 따른 광출력자동제어회로를 나타낸 도면으로, 입력전압(Vcc)에 대해 바이어스저항(R20)에 의해 베이스바이어스가 형성되는 제 1 트랜지스터(Q20)의 컬렉터측에 발광소자로서의 발광다이오드(LD20)가 접속되고, 이 발광다이오드(LD20)로부터 광비임의 반사광을 수광하는 수광소자(PT20)의 출력측에는 분압저항(R22,R23)에 의해 비반전단자(+)의 입력레벨이 조절됨과 더불어 반전단자(-)에 기준전압(Vref)이 설정된 비교수단으로서의 비교기(A20)가 접속된다.2 is a view showing an optical output automatic control circuit according to the present invention, in which light is emitted as a light emitting element on the collector side of a first transistor Q20 having a base bias formed by a bias resistor R20 with respect to an input voltage Vcc. The diode LD20 is connected, and the input level of the non-inverting terminal + is adjusted by the voltage divider R22 and R23 on the output side of the light receiving element PT20 that receives the reflected light of the light beam from the light emitting diode LD20. In addition, a comparator A20 as a comparison means having a reference voltage Vref set to the inverting terminal (−) is connected.

상기 비교기(A20)의 출력측에는 저항(R23)을 매개하여 제 2 트랜지스터(Q22)의 베이스가 접속되는 바, 이 제 2 트랜지스터(Q22)는 상기 비교기(A20)에서 비교출력되는 수광레벨에 따라 전류구동되어 상기 제 1 트랜지스터(Q20)의 베이스바이어스를 조절하게 되고, 그에 따라 발광다이오드(LD20)의 광출력이 자동으로 제어되도록 적용하게 된다.The base of the second transistor Q22 is connected to the output side of the comparator A20 via a resistor R23, and the second transistor Q22 has a current according to the light reception level compared and output from the comparator A20. It is driven to adjust the base bias of the first transistor Q20, so that the light output of the light emitting diode LD20 is automatically controlled.

이어, 상기와 같이 구성된 본 발명에 따른 광출력 자동제어회로의 동작에 대해 설명한다.Next, the operation of the light output automatic control circuit according to the present invention configured as described above will be described.

우선, 입력전압(Vcc)이 저항(R20)에 의해 베이스바이어스가 형성되는 제 1 트랜지스터(Q20)의 베이스에 인가되면, 그 입력전압(Vcc)과 상기 제 1 트랜지스터(Q20)의 컬렉터사이에 접속된 발광다이오드(LD20)가 발광출력하게 된다. 이 발광다이오드(LD20)로부터의 광비임이 반사면(즉, 디스크의 정보기록면)에서 반사되면, 그 반사광이 수광소자(PT20)에서 수광되어 저항(R22,R23)에 의해 레벨조절된 상태에서 비교기(A20)의 비반전단자(+)에 인가된다.First, when an input voltage Vcc is applied to the base of the first transistor Q20 where the base bias is formed by the resistor R20, it is connected between the input voltage Vcc and the collector of the first transistor Q20. The light emitting diode LD20 emits light. When the light beam from the light emitting diode LD20 is reflected on the reflecting surface (i.e., the information recording surface of the disk), the reflected light is received by the light receiving element PT20 and leveled by the resistors R22 and R23. A20) is applied to the non-inverting terminal (+).

따라서, 비교기(A20)에서는 반전단자(-)에 설정된 기준전압(Vref)을 기초로 수광소자(PT20)에서의 수광레벨을 비교하여 상기 수광소자(PT20)의 수광레벨의 크기에 따라 출력레벨이 정의되고, 그 출력이 비교기(A20)로부터 저항(R24)을 매개하여 제 2 트랜지스터(Q22)의 베이스에 인가된다. 즉, 수광소자(PT20)에서 수광한 광량이 많은 경우에는 비교기(A20)의 출력이 하이레벨로 되므로 트랜지스터(Q22)가 도통되고, 이 트랜지스터(Q22)의 도통에 따라 트랜지스터(Q20)의 베이스전류가 감소되므로 발광다이오드(LD)에서의 발광출력이 저하된다.Therefore, the comparator A20 compares the light receiving level of the light receiving device PT20 based on the reference voltage Vref set at the inverting terminal (−), and the output level is increased according to the size of the light receiving level of the light receiving device PT20. And the output thereof is applied from the comparator A20 to the base of the second transistor Q22 via the resistor R24. That is, when the amount of light received by the light receiving element PT20 is large, since the output of the comparator A20 becomes high level, the transistor Q22 is turned on, and according to the conduction of the transistor Q22, the base current of the transistor Q20 is turned on. Since is reduced, the light emission output from the light emitting diode LD is reduced.

이에 대해, 상기 수광소자(PT20)에서 출력되는 수광레벨이 비교기(A20)의 반전단자(+)에 설정된 기준전압(Vref)보다 낮으면 비교기(A20)의 출력은 로우레벨로 되고, 그에 따라 트랜지스터(Q22)가 비도통상태로 되므로 트랜지스터(Q20)만의 도통에 의해 발광다이오드(LD20)에서의 발광출력이 증대된다. 따라서, 발광다이오드(LD20)에서는 반사광의 레벨, 즉 수광소자(PT20)에 의한 수광레벨을 기초로 그 발광출력레벨이 항상 일정하게 유지될 수 있다.On the other hand, if the light receiving level output from the light receiving element PT20 is lower than the reference voltage Vref set in the inverting terminal + of the comparator A20, the output of the comparator A20 is at a low level, and accordingly the transistor Since Q22 is in a non-conductive state, the light emission output from the light emitting diode LD20 is increased by the conduction of only the transistor Q20. Therefore, in the light emitting diode LD20, the light emission output level may be constantly maintained based on the level of the reflected light, that is, the light receiving level by the light receiving element PT20.

상기한 바와 같이, 본 발명에 따른 광출력 자동제어회로에 의하면 반사면의 위치와 거리에 따라 발광다이오드로부터 항상 일정한 레벨의 광출력이 얻어지게 되므로, 발광다이오드가 예컨대 디스크의 반사면과 인접하여 설치되는 경우에도 광출력레벨이 자동으로 레벨감소되므로 과다한 입사광량에 의한 수광소자의 오동작이 경감됨과 더불어 전력손실이 절감된다.As described above, according to the light output automatic control circuit according to the present invention, since a constant level of light output is always obtained from the light emitting diode according to the position and distance of the reflecting surface, the light emitting diode is provided adjacent to the reflecting surface of the disk, for example. Even if the light output level is automatically reduced, the malfunction of the light receiving element due to excessive incident light is reduced and power loss is reduced.

또한, 본 발명에 따르면, 발광출력레벨의 자동제어를 위한 회로의 구성을 집적회로(IC)화하면 PCB상에서의 점유면적의 축소가 가능하게 되므로 장치 또는 기기의 소형화에도 기여할 수 있다.In addition, according to the present invention, if the integrated circuit (IC) of the circuit configuration for automatic control of the light emission output level can be reduced, the area occupied on the PCB can be reduced, thereby contributing to the miniaturization of the device or device.

Claims (1)

입력전압에 대해 바이어스저항(R20)에 의해 베이스바이어스가 설정되어 발광소자(LD20)를 구동하는 제 1 트랜지스터(Q20)와, 상기 발광소자(LD20)로부터의 광비임의 반사광을 수광하는 수광소자(PT20)에 일단이 접속되고 다른 단에 설정된 기준전압 (Vref)에 의해 수광소자(PT20)의 출력을 비교하는 비교수단(A20), 상기 비교수단(A20)의 출력에 의해 베이스바이어스가 형성되어 상기 제 1 트랜지스터(Q20)의 베이스구동전류를 제어하여 상기 발광소자(LD20)의 광출력 레벨이 일정하게 제어되도록 하는 제 2 트랜지스터(Q22)로 구성된 것을 특징으로 하는 광출력 자동제어회로.The base bias is set by the bias resistor R20 with respect to the input voltage, thereby driving the first transistor Q20 for driving the light emitting device LD20 and the light receiving element PT20 for receiving the reflected light of the light beam from the light emitting device LD20. ) Is connected to one end and a comparison means A20 for comparing the output of the light receiving element PT20 by the reference voltage Vref set at the other end, and a base bias is formed by the output of the comparing means A20. And a second transistor (Q22) for controlling the base driving current of the first transistor (Q20) so that the light output level of the light emitting element (LD20) is constantly controlled.
KR1019930014149A 1993-07-26 1993-07-26 Auto control circuit of optical power Expired - Fee Related KR950013390B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930014149A KR950013390B1 (en) 1993-07-26 1993-07-26 Auto control circuit of optical power

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Application Number Priority Date Filing Date Title
KR1019930014149A KR950013390B1 (en) 1993-07-26 1993-07-26 Auto control circuit of optical power

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KR950004122A KR950004122A (en) 1995-02-17
KR950013390B1 true KR950013390B1 (en) 1995-11-08

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