KR950012931A - Laser diode and manufacturing method thereof - Google Patents

Abstract

Disclosed are a laser diode and a method of manufacturing the same, which can easily adjust the width of the active layer in the horizontal direction and the width of the stripe for mode control, and can reduce current spreading. A first clad InGaPs first cladding layer is formed on the p-type GaAS semiconductor substrate with convex portions at the center. On the convex portion, a laser oscillation layer composed of an InGaP first waveguide layer InGaAsP active layer and an InGaAsP second waveguide layer is formed. An n-type InGaP second cladding layer is formed on the second waveguide layer, and an n-type InGaAsP cap layer having the same composition as the active layer is formed on the second cladding layer. On the first cladding layer, a second conductive type first current limiting layer having an opening exposing the active layer and an n-type second current limiting layer having an opening formed at the same height as the cap layer and exposing an upper surface of the cap layer are formed. . The laser oscillation layer, the second cladding layer and the cap layer form ridges having sidewalls in a direction perpendicular to the substrate. Ridges having sides formed in a direction perpendicular to the surface of the substrate can be formed, so that the width of the stripe can be easily adjusted, control of the mode is facilitated, and current spreading is reduced.

Description

Laser diode and manufacturing method thereof

Since this is an open matter, no full text was included.

2 is a cross-sectional view showing an example of the laser diode of the present invention,

3A to 3C are cross-sectional views illustrating an example of a method of manufacturing a laser diode for manufacturing the semiconductor laser diode of the present invention.

Claims (3)

A first conductive GaAs semiconductor substrate; A first cladding type InGaP first cladding layer formed on the substrate and having a convex portion at a center thereof; A laser oscillation layer comprising an InGaAsP first waveguide layer formed on the convex portion of the first cladding layer, an InGaAsP active layer formed on the first waveguide layer, and an InGaAsP second waveguide layer formed on the active layer and having the same width as the convex portion; A second conductive InGaP second clad layer formed on the second waveguide layer; A second conductive type InGaAsP cap layer formed on the second cladding layer and having the same composition as the active layer; A second conductive type first current limiting layer formed on the first cladding layer and having an opening for exposing the active layer; And a first conductive type second current limiting layer formed on the first current limiting layer and having an opening formed at the same height as the cap layer to expose an upper surface of the cap layer. The laser diode of claim 1, wherein the laser oscillation layer, the second cladding layer, and the cap layer form a ridge having sidewalls perpendicular to the substrate. A laser oscillation layer comprising a first conductive InGaP first cladding layer, an InGaAsP first waveguide layer, an InGaAsP active layer, and an InGaAsP second waveguide layer, a second conductive InGaP second cladding layer, on the first conductive GaAs semiconductor substrate, Sequentially epitaxially growing a second conductive InGaAsP cap layer having the same composition as the active layer; Etching the cap layer, the second cladding layer, the laser oscillation layer, and the first cladding layer to form a ridge having an upper portion of a central portion of the first cladding layer and a sidewall perpendicular to the substrate; And forming a current limiting layer having the reverse diode shape while exposing the upper surface of the ridge on the first cladding layer. ※ Note: The disclosure is based on the initial application.