KR950009990B1 - Glass composition for sealing - Google Patents
Glass composition for sealing Download PDFInfo
- Publication number
- KR950009990B1 KR950009990B1 KR1019890017112A KR890017112A KR950009990B1 KR 950009990 B1 KR950009990 B1 KR 950009990B1 KR 1019890017112 A KR1019890017112 A KR 1019890017112A KR 890017112 A KR890017112 A KR 890017112A KR 950009990 B1 KR950009990 B1 KR 950009990B1
- Authority
- KR
- South Korea
- Prior art keywords
- low melting
- sealing
- zno
- melting point
- glass composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
- C03C8/245—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders containing more than 50% lead oxide, by weight
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
내용 없음.No content.
Description
본 발명은 저융점 봉착용 유리조성물에 관한 것으로서, 특히 비실투 상태에서 봉착을 할 수 있는 저융점 유리분말과 여기에 첨가제로 혼합되는 내화성 유리분말로 이루어져 있어서, IC용 세라믹 패키지(CERAMIC PACKAGE)의 봉착에 적합한 저융점 봉착용 유리조성물에 관한 것이다.The present invention relates to a glass composition for low melting point sealing, in particular a low melting glass powder that can be sealed in an devitrification state and a refractory glass powder mixed with an additive therein, the ceramic package of the IC (CERAMIC PACKAGE) It relates to a low melting point sealing glass composition suitable for sealing.
종래 IC용 알루미나 세라믹 패키지의 봉착에는 PbO-B2O3-ZnO계의 열 실투성 유리분말이 사용되어 왔으며, 이것은 480℃~500℃에서 열처리함에 따라 유리화된 후, 실투화하여 봉착부를 형성하는 것으로서, 고온의 열처리가 요구되기 때문에 열에 민감한 각종의 세라믹 패키지 봉착에 요구되는 약 400℃ 이하의 온도에서는 사용이 곤란하였다.Conventionally, PbO-B 2 O 3 -ZnO-based heat-permeable glass powder has been used for sealing IC alumina ceramic packages, which is vitrified by heat treatment at 480 ° C. to 500 ° C., and then devitrified to form sealing portions. As a high temperature heat treatment is required, it is difficult to use at a temperature of about 400 ° C. or lower required for sealing various heat sensitive ceramic packages.
따라서, 본 발명의 목적은 400℃ 이하의 온도에서 열처리를 함에 따라 연화유동하여 봉착 대상물질에 대해 기밀한 봉착을 형성하고, 알루미나 세라믹 및 합금으로된 전극 리드선에 적합한 열팽창 특성을 가지고 있으며, 또한 봉착후 리드프레임의 도금공정에서 산처리를 하여도 봉착된 유리가 영향을 받지않는등의 내산성이 강하여 IC용 세라믹 패키지의 제특성을 충분히 만족시켜줄 수 있는 저융점 봉착용 유리조성물을 제공하는데 있다.Accordingly, an object of the present invention is to soften the flow by heat treatment at a temperature of 400 ℃ or less to form a hermetic sealing to the sealing target material, has a thermal expansion characteristics suitable for the electrode lead wire made of alumina ceramic and alloy, and also sealing The present invention provides a low melting point sealing glass composition that can satisfactorily satisfy the characteristics of the IC ceramic package due to its strong acid resistance such that the sealed glass is not affected by acid treatment in the lead frame plating process.
이하, 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.
본 발명은 세라믹 패키지의 봉착에 사용되는 저융점 봉착용 유리조성물에 있어서, 중량비로 PbO 65~85wt%, B2O37~20wt%, ZnO 2~5.5wt%, Al2O30~3wt%, SiO20~6wt%의 조성으로 이루어진 저융점 유리분말 50~80wt%와, ZnO 고용 페탈라이트(ZnO·Al2O3·3SiO2) 20~50wt%로 이루어진 것을 특징으로 하는 저융점 봉착용 유리조성물인 것이다.The present invention is a low melting point glass composition for sealing the ceramic package, PbO 65 ~ 85wt%, B 2 O 3 7 ~ 20wt%, ZnO 2 ~ 5.5wt%, Al 2 O 3 0 ~ 3wt %, Low melting point glass powder composed of 50 ~ 80wt% of SiO 2 0 ~ 6wt%, and 20 ~ 50wt% ZnO solid solution petalite (ZnO · Al 2 O 3 · 3SiO 2 ) It is a wearing glass composition.
이하, 본 발명을 더욱 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in more detail.
본 발명에 따른 저융점 봉착용 유리조성물은 종래의 저융점 유리분말 50~80wt%와, 본 발명에 따른 저팽창성 내화물 첨가제인 ZnO 고용 페탈라이트(ZnO·Al2O3SiO2·3SiO2) 20~50wt%로 이루어진 것에 특징이 있다.The low melting point sealing glass composition according to the present invention is a conventional low melting point glass powder of 50 ~ 80wt%, ZnO solid solution petalite (ZnO · Al 2 O 3 SiO 2 · 3SiO 2 ) 20 which is a low-expandable refractory additive according to the present invention 20 It is characterized by consisting of ~ 50wt%.
본 발명에 사용된 저융점 유리분말은 PbO 65~85wt%, B2O37~20wt%, ZnO 2~6.5wt%, Al2O30~3wt% 및 SiO20~6wt%를 혼합하여 850℃~950℃의 온도로 약 30분 동안 용융하고, 이를 몰드에서 판상으로 성형한후 150메쉬 이하의 입자크기로 분쇄한 것이다.Low melting glass powder used in the present invention is PbO 65 ~ 85wt%, B 2 O 3 7 ~ 20wt%, ZnO 2 ~ 6.5wt%, Al 2 O 3 0 ~ 3wt% and SiO 2 0 ~ 6wt% by mixing Melt for about 30 minutes at a temperature of 850 ℃ ~ 950 ℃, it was molded into a plate in a mold and then pulverized to a particle size of 150 mesh or less.
이때, PbO가 65%보다 적으면 연화점이 높게되어 400℃에서 봉착이 어렵게되고, 85% 이상이되면 유리의 열팽창계수가 높게되어 알루미나 패키지에 봉착후 응력이 발생하여 봉착부에 균열이 생길 우려가 있다.At this time, if the PbO is less than 65%, the softening point becomes high, making it difficult to seal at 400 ° C. If the PbO is higher than 85%, the thermal expansion coefficient of the glass is high, and a stress may occur after sealing the alumina package, causing cracks in the sealing part. .
또 B2O3가 7% 이하가 되면 유리의 연화점이 높게되고, 20% 이상이 되면 유리에 실투가 발생하여 저온에서의 봉착이 불가능하게 된다.In B 2 O 3 it is not more than 7% when the glass softening point is high, and when more than 20% will not be sealed at a low temperature and the devitrification occurs in the glass.
ZnO는 2% 이하가 되면 내산성이 약화되고 6.5% 이상에서는 실투가 발생하여 유동성이 저하된다. Al2O3와 SiO2공히 3%와 6% 이하로 한정한 이유는 그 이하에서는 유리의 강도를 증가시켜 내산성을 좋게하지만, 그 이상에서는 유리의 강도를 증가시켜 내산성을 좋게하지만, 그 이상에서는 유리의 연화점을 높게하여 400℃에서 유동성이 저하되기 때문이다.When ZnO is 2% or less, acid resistance is weakened, and devitrification occurs at 6.5% or more, and fluidity is lowered. The reason for limiting the Al 2 O 3 and SiO 2 to 3% and 6% or less is to increase the strength of the glass below that to improve acid resistance, but above that to increase the strength of the glass to improve the acid resistance. This is because the softening point of the glass is made higher and the fluidity is lowered at 400 ° C.
이러한 저융점 유리분말은 그 전이점이 280℃~310℃ 부근으로 저온에서 열처리함에 따라 충분히 유동하고 비결정화 유리상태에서 기밀한 봉착을 달성할 수 있다.Such a low melting glass powder can sufficiently flow as the transition point is heat treated at a low temperature around 280 ° C to 310 ° C and achieve hermetic sealing in an amorphous glass state.
그러나 이 유리의 평균 열팽창계수는 110~120×10E-7/℃로서, 70×10E-7/℃ 정도인 세라믹 패키지 물질에 비해 높기 때문에 봉착시 응력이 발생하여 균열이 생긴다.However, the average coefficient of thermal expansion of this glass is 110-120 × 10E -7 / ° C, which is higher than that of the ceramic package material of about 70 × 10E -7 / ° C.
따라서, 이러한 저융점 유리분말에다 저팽창성 무기내화물 첨가제인 ZnO 고용 페탈라이트(ZnO-Al2O3-2SiO2)를 15~50wt% 정도 혼합하므로서 알루미나 세라믹 패키지의 봉착에 맞는 저융점 봉착용 유리조성물이 얻어지게 되는 것이다.Therefore, a low melting point glass composition suitable for sealing an alumina ceramic package by mixing about 15-50 wt% of ZnO solid solution ferriteite (ZnO-Al 2 O 3 -2SiO 2 ), which is a low-expansion inorganic refractory additive, is added to the low melting point glass powder. Will be obtained.
한편, 본 발명에 따른 저팽창성 무기내화물 첨가제인 ZnO 고용 페탈라이트는 ZnO와 Al2O3및 SiO2를 1 : 1 : 3의 몰비로 혼합하고, 이를 1500~1700℃ 온도에서 약 8시간동안 소결한 다음, 이를 150메쉬 이하의 크기로 분쇄한 것이다.On the other hand, ZnO solid solution petalite, a low-expansion inorganic refractory additive according to the present invention is mixed with ZnO, Al 2 O 3 and SiO 2 in a molar ratio of 1: 1: 3, and sintered for about 8 hours at a temperature of 1500 ~ 1700 ℃ After that, it was ground to a size of 150 mesh or less.
이하, 본 발명에 대한 실시예를 들어보면 다음과 같다.Hereinafter, examples of the present invention will be described.
[실시예 1]Example 1
우선 저융점 유리분말을 제조하기 위하여 다음 표 1과 같은 조성비로 각 성분을 혼합하고, 이를 백금 도가니에서 900℃의 30분 동안 용융한 다음, 이 용융 유리조성물을 몰드에서 판상으로 성형한 후, 볼밀을 사용하여 80분 동안 분쇄하고, 150메쉬체로 체걸음한 것을 저융점 유리분말로 사용하였다.First, in order to produce a low melting glass powder, each component is mixed in a composition ratio as shown in Table 1, and then melted in a platinum crucible for 30 minutes at 900 ° C., and then the molten glass composition is molded into a plate in a mold, followed by a ball mill. After grinding for 80 minutes using a sieve with a 150 mesh sieve was used as a low melting glass powder.
다른 한편으로는, 첨가제로서 ZnO : Al2O3: SiO2를 1 : 1 : 3몰비로 혼합하고, 이를 알루미나 도가니에서 1600℃의 온도로 8시간 소결한 다음, 손으로 일정크기로 분쇄한 후 다시 볼밀로 사용하여 80분간 밀링하고 150메쉬 이하로 체걸음한 것을 저팽창성 첨가제로 하였다.On the other hand, ZnO: Al 2 O 3 : SiO 2 as an additive is mixed in a 1: 1: 3 molar ratio, which is sintered in an alumina crucible at a temperature of 1600 ° C. for 8 hours, and then crushed by hand to a certain size The ball mill was again milled for 80 minutes and sieved to 150 mesh or less as a low-expansion additive.
이렇게하여 만들어진 저융점 유리분말과 저팽창성 첨가제를 다음 표 1과 같은 비율로 평량, 혼합하여 저융점 봉착용 유리조성물을 얻었다.The low melting point glass powder and the low-expansion additive made in this way were weighed and mixed in the ratio as shown in Table 1 below to obtain a low melting point sealing glass composition.
얻어진 저융점 봉착용 유리조성물이 알루미나 세라믹 패키지의 기밀 봉착에 적합한가를 판단하기 위하여 다음과 같은 항목을 측정하고 그 결과를 표 2에 나타내었다.In order to determine whether the obtained low melting point glass composition is suitable for hermetic sealing of the alumina ceramic package, the following items were measured and the results are shown in Table 2.
[실시예 2 내지 3][Examples 2 to 3]
상기 실시예 1과 동일한 방법으로 실시하되 저융점 유리분말의 조성비율은 다음 표 1과 같이 변경시키고, 저융점 분말과 저팽창성 첨가제의 혼합비율을 다음 표 2와 같이 변경하여 저융점 봉착용 유리조성물을 제조한 다음 각각에 대한 특성을 측정하여 다음 표 2에 나타내었다.The same method as in Example 1, but the composition ratio of the low melting point glass powder is changed as shown in Table 1, and the mixing ratio of the low melting point powder and the low-expansion additive is changed as shown in Table 2 below for low melting point sealing glass composition To prepare and then to measure the properties for each is shown in Table 2 below.
[표 1]TABLE 1
저융점 유리분말의 조성비Composition ratio of low melting glass powder
[표 2]TABLE 2
저융점 유리분말과 저팽창성 유리분말의 혼합비율Mixing ratio of low melting glass powder and low expandable glass powder
[표 3]TABLE 3
상술한 바와같이, 본 발명에 따른 저융점 봉착용 유리조성물은 400℃ 이하의 저온에서도 기밀한 봉착을 형성할 수 있고, 특히 알루미나 세라믹 및 합금으로 된 전극리드선에 적합한 열팽창 특성을 가지고 있을 뿐아니라, 봉착후 리드프레임의 도금공정에서 산처리를 하여도 봉착된 유리조성물이 영향을 받지않을 만큼 내산성이 강하여 IC용 세라믹 패키지의 봉착에 매우 적합한 것이다.As described above, the glass composition for low melting point sealing according to the present invention can form airtight sealing even at a low temperature of 400 ° C. or lower, and in particular, has a thermal expansion characteristic suitable for electrode lead wire made of alumina ceramic and alloy. After sealing, even if acid treatment is performed in the plating process of the lead frame, the sealed glass composition is strong in acid resistance so that it is very suitable for sealing the ceramic package for IC.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890017112A KR950009990B1 (en) | 1989-11-24 | 1989-11-24 | Glass composition for sealing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890017112A KR950009990B1 (en) | 1989-11-24 | 1989-11-24 | Glass composition for sealing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910009581A KR910009581A (en) | 1991-06-28 |
| KR950009990B1 true KR950009990B1 (en) | 1995-09-04 |
Family
ID=19292006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890017112A Expired - Fee Related KR950009990B1 (en) | 1989-11-24 | 1989-11-24 | Glass composition for sealing |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950009990B1 (en) |
-
1989
- 1989-11-24 KR KR1019890017112A patent/KR950009990B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR910009581A (en) | 1991-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR970000898B1 (en) | Non-lead sealing glasses | |
| US4405722A (en) | Sealing glass compositions | |
| US5336644A (en) | Sealing glass compositions | |
| US3954486A (en) | Solder glass with refractory filler | |
| CN101456674A (en) | Rare-earth doped leadless and low-melting point sealing glass and its preparation method | |
| US5089445A (en) | Fusion sealing materials | |
| US5116786A (en) | Low temperature sealing glass composition | |
| JPH06263478A (en) | Lead-free low melting point glass | |
| JPH0127982B2 (en) | ||
| KR950009990B1 (en) | Glass composition for sealing | |
| JP3096136B2 (en) | Glass composition for low-temperature fired substrate and substrate obtained therefrom | |
| US4251595A (en) | Low temperature sealing glasses | |
| US4146655A (en) | Method for encapsulating a semiconductor diode | |
| KR100533865B1 (en) | Preparation of low melting crystallized solder glasses | |
| JP3519121B2 (en) | Sealing composition | |
| KR950004486B1 (en) | Glass solders | |
| JPH06191885A (en) | Sealing glass and circuit parts | |
| KR950004477B1 (en) | Glass solders | |
| JP2824292B2 (en) | Sealing material | |
| JP3227733B2 (en) | High expansion sealing material | |
| KR950009988B1 (en) | Low Melting Point Expandable Sealed Glass Composition | |
| KR950004481B1 (en) | Glass solders | |
| JPH0449497B2 (en) | ||
| JPH0144656B2 (en) | ||
| JP2778012B2 (en) | Low temperature sealing composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| G160 | Decision to publish patent application | ||
| PG1605 | Publication of application before grant of patent |
St.27 status event code: A-2-2-Q10-Q13-nap-PG1605 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 11 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 12 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 13 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R14-asn-PN2301 |
|
| FPAY | Annual fee payment |
Payment date: 20080901 Year of fee payment: 14 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 14 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20090905 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20090905 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |