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KR950009915A - 반도체 소자의 티타늄-실리사이드 형성방법 - Google Patents

반도체 소자의 티타늄-실리사이드 형성방법 Download PDF

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Publication number
KR950009915A
KR950009915A KR1019930019243A KR930019243A KR950009915A KR 950009915 A KR950009915 A KR 950009915A KR 1019930019243 A KR1019930019243 A KR 1019930019243A KR 930019243 A KR930019243 A KR 930019243A KR 950009915 A KR950009915 A KR 950009915A
Authority
KR
South Korea
Prior art keywords
titanium
silicide
semiconductor device
forming
heat treatment
Prior art date
Application number
KR1019930019243A
Other languages
English (en)
Other versions
KR960016235B1 (en
Inventor
유상호
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR93019243A priority Critical patent/KR960016235B1/ko
Publication of KR950009915A publication Critical patent/KR950009915A/ko
Application granted granted Critical
Publication of KR960016235B1 publication Critical patent/KR960016235B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체 소자의 티타늄-실리사이드 형성방법에 관한 것으로, 티타늄 박막에 As, BF2또는 Si 등을 이온주입한 후 금속열처리공정으로 티타늄-실리사이드를 형성하므로써 후속 열처리공정시 입계에서 그로부(Groove) 발생에 의해 일어나는 응집현상을 야기시키는 표면 및 계면의 확산을 방지하도록 열적 안정화를 증가시킬 수 있는 반도체 소자의 티타늄-실리사이드를 형성하는 방법에 관하여 기술된다.

Description

반도체 소자의 티타늄-실리사이드 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a도 내지 제1c도는 본 발명에 의한 반도체 소자의 티타늄-실리사이드를 형성하는 단계를 설명하기 위해 도시한 단면도.

Claims (1)

  1. 반도체 소자의 티타늄-실리사이드 형성방법에 있어서, 기판상에 티타늄(7)을 얇게 증착한 다음, 상기 티타늄(7)내에 이온 주입공정으로 As, BF2또는 Si 이온을 주입한 후, 급속열처리공정으로 티타늄-실리사이드(8)를 형성하여 후속 열처리공정시 열적안정화를 이루도록하는 것을 특징으로 하는 반도체 소자의 티타늄-실리사이드 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR93019243A 1993-09-22 1993-09-22 Semiconductor titanium-silicide forming method KR960016235B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93019243A KR960016235B1 (en) 1993-09-22 1993-09-22 Semiconductor titanium-silicide forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93019243A KR960016235B1 (en) 1993-09-22 1993-09-22 Semiconductor titanium-silicide forming method

Publications (2)

Publication Number Publication Date
KR950009915A true KR950009915A (ko) 1995-04-26
KR960016235B1 KR960016235B1 (en) 1996-12-07

Family

ID=19364205

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93019243A KR960016235B1 (en) 1993-09-22 1993-09-22 Semiconductor titanium-silicide forming method

Country Status (1)

Country Link
KR (1) KR960016235B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100246332B1 (ko) * 1997-03-13 2000-03-15 김영환 반도체소자의 살리사이드 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100246332B1 (ko) * 1997-03-13 2000-03-15 김영환 반도체소자의 살리사이드 제조방법

Also Published As

Publication number Publication date
KR960016235B1 (en) 1996-12-07

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