KR950009253Y1 - Main chamber high vacuum maintaining apparatus - Google Patents
Main chamber high vacuum maintaining apparatus Download PDFInfo
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- KR950009253Y1 KR950009253Y1 KR2019930003857U KR930003857U KR950009253Y1 KR 950009253 Y1 KR950009253 Y1 KR 950009253Y1 KR 2019930003857 U KR2019930003857 U KR 2019930003857U KR 930003857 U KR930003857 U KR 930003857U KR 950009253 Y1 KR950009253 Y1 KR 950009253Y1
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- Prior art keywords
- cryopump
- valve
- main chamber
- high vacuum
- wafer
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- 238000010926 purge Methods 0.000 claims description 12
- 239000001307 helium Substances 0.000 claims description 8
- 229910052734 helium Inorganic materials 0.000 claims description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 4
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 230000008929 regeneration Effects 0.000 description 8
- 238000011069 regeneration method Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
Abstract
내용 없음.No content.
Description
제 1 도는 종래의 장치를 나타낸 개략도.1 is a schematic view showing a conventional apparatus.
제 2 도는 본 고안의 장치를 나타낸 개략도.2 is a schematic view showing the device of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 메인챔버 6,13 : 크라이오 펌프1: main chamber 6,13: cryo pump
7,15 : 스로틀밸브 8,14 : 게이트밸브7,15: throttle valve 8,14: gate valve
9,18 : 헬룸콤프레셔 10,16 : 퍼지밸브9,18: Hellum Compressor 10,16: Purge Valve
11 : 메카니칼 펌프 12,17 : 크라이오러퍼밸브11: Mechanical pump 12, 17: Cryolipher valve
본 고안은 웨이퍼 증착 장비에서 메인챔버를 고진공 상태로 유지하기 위한 장치에 관한 것으로서, 좀더 구체적으로는 메인챔버를 고진공 상태로 유지하는 크라이오펌프(Cryo Pump)의 리제너레이션(Regeneration)시 소요되는 다운타임(Down Time)을 없앨수 있도록 한 것이다.The present invention relates to an apparatus for maintaining the main chamber in a high vacuum state in a wafer deposition apparatus, and more specifically, down required during the regeneration of a cryo pump that maintains the main chamber in a high vacuum state. This is to eliminate down time.
종래에는 메인챔버를 고진공 상태로 유지하기 위해 제 1 도에 도시한 바와같이 웨이퍼를 증착시키는 공정을 수행하는 메인챔버(1)와, 메인챔버의 일축에 설치되어 웨이퍼를 메인챔버내로 로딩/언로딩 시키기 위한 로드를 챔버(Loadlock Chamber) (2)와, 웨이퍼를 로드록 챔버내로 인입출시킬때 로드록 챔버를 대기압 상태로 만들기 위해 파이프(3)상에 설치된 밴트밸브(4)와, 웨이퍼를 메인챔버내로 로딩/언로딩시킬때 로드록 챔버를 고진공 상태로 유지시킬 수 있도록 파이프의 통로를 개폐시키는 러퍼 밸브(Rough Valve)(5)와, 메인챔버를 고진공 상태로 유지시키는 크라이오펌프(6)와, 가스량을 조절하기 위해 크라이오 핌프 상부에 설치되는 스로틀밸브(7)와, 메인챔버와 크라이오 핌프를 격리시키는 게이트밸브(8)와, 크라이오 펌프의 콜드헤드(도시는 생략함)를 냉각시키는 헬륨 콤프레셔(He Compressor)(9)와, 헬륨콤프레셔를 퍼지시키기 위해 N2를 공급하는 퍼지밸브(10)와, 로드록 챔버 및 크라이오 펌프를 저진공 상태로 유지시키는 메카니칼 펌프(Mechanical Pump)(11)와. 크라이오 펌프와 메카니칼 펌프상에 설치되어 이들 사이를 개폐시키는 크라이오러퍼 밸브(12)등으로 구성되어 있다.Conventionally, in order to maintain the main chamber in a high vacuum state, a main chamber 1 for performing a process of depositing a wafer as shown in FIG. 1 and a main chamber 1 mounted on one axis of the main chamber are loaded / unloaded into the main chamber. Load lock chamber (2), a vent valve (4) installed on the pipe (3) to bring the load lock chamber to atmospheric pressure when the wafer is drawn into the load lock chamber, and the wafer is held in the main chamber. A rough valve 5 for opening and closing the passage of the pipe so as to keep the load lock chamber in a high vacuum state when loading / unloading into it, and a cryopump 6 for keeping the main chamber in a high vacuum state; A throttle valve (7) installed above the cryopump to control the gas volume, a gate valve (8) to isolate the main chamber and the cryopump, and a cold head (not shown) of the cryopump. A mechanical pump for maintaining each of helium and the compressor (He Compressor) (9), and a purge valve 10 for supplying N 2 to purge the helium compressor, the load lock chamber and the cryopump to a low vacuum state (Mechanical Pump And (11). It is comprised on the cryopper valve 12 etc. which are provided on a cryopump and a mechanical pump, and open and close between them.
이와같이 구성된 웨이퍼 증착 장비는 스탠-바이(Stand-by)상태에서 로드록 챔버(2)는 저진공 상태이며 게이트 밸브(8)와 스로틀 밸브(7)는 열려있고 고진공 펌프인 크라이오 펌프(6)가 작동되므로 메인챔버(1)는 고진공 상태를 유지하게 된다.In this configuration, the wafer deposition apparatus has a stand-by state in which the load lock chamber 2 is in a low vacuum state, the gate valve 8 and the throttle valve 7 are open, and the high vacuum pump is a cryopump 6. Since the main chamber 1 is maintained in a high vacuum state.
이러한 상태에서 공정을 수행하기 위한 웨이퍼(도시는 생략함)가 이송수단에 의해 이송되어 오면 별도의 센서가 이를 감지하여 파이프(3)상에 설치된 밴트밸브(4)를 개방하게 되므로 로드록 챔버(2)내를 대기압 상태로 만든 다음 배치(Batch) 방식으로 웨이퍼를 로드록챔버(2)내에 로딩한 후 벤트밸브(4)를 닫는다.In this state, when a wafer (not shown) for carrying out the process is transferred by a transfer means, a separate sensor detects this and opens the vent valve 4 installed on the pipe 3, so that the load lock chamber ( 2) After bringing the inside to atmospheric pressure, the wafer is loaded into the load lock chamber 2 in a batch manner and the vent valve 4 is closed.
이와같이 공정을 수행하기 위한 웨이퍼가 로드록 챔버(2)에 로딩완료되면 파이프(3)상에 설치된 러핑밸브(5)를 열고 메카니칼 펌프(11)로 로드챔버(2)를 다시 저진공 상태로 만든 다음 러핑밸브(5)를 닫는다.When the wafer for carrying out the process is loaded in the load lock chamber 2, the roughing valve 5 installed on the pipe 3 is opened and the load chamber 2 is brought back into the low vacuum state by the mechanical pump 11. Then close the roughing valve (5).
그후 메인챔버(1)와 로드록 챔버(2)의 셔터역할을 하는 로드록 밸브(도시는 생략함)을 개방시킨 다음 웨이퍼를 메인챔버(1)내로 로딩시키고 로드록 챔버를 닫는다.Thereafter, a load lock valve (not shown) serving as a shutter of the main chamber 1 and the load lock chamber 2 is opened, and then the wafer is loaded into the main chamber 1 and the load lock chamber is closed.
이와같이 메인챔버(1)내로 웨이퍼가 로딩완료되면 스로틀밸브(7)를 개방시킴과 동시에 메인챔버(1)내로 아르곤가스를 주입하게 되므로 아르곤가스가 타아겟(Target)에 부딪혀 플라즈마(Plasma)를 헝성하게 되고, 이에따라 플라즈마에 의해 떨어져 나간 소오스(Source)가 웨이퍼에 증착되므로 공정을 수행하게 된다.As such, when the wafer is loaded into the main chamber 1, the throttle valve 7 is opened and the argon gas is injected into the main chamber 1 so that the argon gas hits the target to form a plasma. As a result, a source separated by the plasma is deposited on the wafer, thereby performing the process.
이와같이 공정이 수행된 후에는 웨이퍼의 투입순서와 역순으로 웨이퍼를 메인챔버(1)내에서 언로딩하게 되는데, 이와같은 공정은 반복 수행된다.After the process is carried out as described above, the wafer is unloaded in the main chamber 1 in the reverse order of the input of the wafer. This process is repeated.
그러나 이러한 종래의 장치는 메인챔버(1)내를 고진공 상태로 유지하는 크라이오펌프(6)는 컨단세이선(Condansation)과 어드솝션(Adsorption)의 방법으로 펌핑을 하게 되는데, 이에 따라 크라이오 펌프의 콜드헤드 온도가 흡착된 가스에 의해 상승되어 크라이오펌프의 펌핑속도가 저하되므로 정기적으로 주1회씩(7시간정도)리제너레이션을 하여야 되었으므로 장비의 가동율이 저하되었음은 물론 메인 챔버(1)의 벤트시에도 1개의 크라이오펌프만을 사용하여야 되었으므로 펌프다운 타임이 길어지게 되는 문제점이 있였다.However, in the conventional apparatus, the cryopump 6, which maintains the inside of the main chamber 1 in a high vacuum state, is pumped by a method of condansation and advice, and thus the cryopump Since the cold head temperature of is increased by the adsorbed gas, the pumping speed of the cryopump is reduced, so it is necessary to perform regular regeneration once a week (about 7 hours). Since only one cryopump had to be used at the time of venting, the pump down time was long.
본 고안은 종래의 이와같은 문제점을 해결하기 위해 안출한 것으로서, 메인챔버내를 고진공 상태로 유지시키는 크라이오펌프를 병렬로 설치하여 크라이오펌프의 리제너레이션시 장비의 가동을 중단하지 않고 크라이오펌프를 스위칭하여 연속적으로 웨이퍼의 증착공정을 수행할 수 있도록 함과 동시에 메인챔버의 벤트시에도 한꺼번에 2개의 크라이오펌프로 신속하게 벤트시킬 수 있도록 하는데 그 목적이 있다.The present invention has been made to solve such a problem in the prior art, by installing a cryopump in parallel to keep the inside of the main chamber in a high vacuum state in the cryopump regeneration of the cryopump without interrupting the operation of the equipment In order to perform the deposition process of the wafer continuously by switching to and at the same time to vent the two chambers at the same time during the vent of the main chamber to be quickly vented.
상기 목적을 달성하기 위한 본 고아의 형태에 따르면, 메인챔버에 게이트밸브와 스로틀밸브 그리고 크라이오펌프를 차례로 설치하여 메인챔버내를 고진공 상태로 유지하고 크라이오펌프에는 크라이오러퍼밸브, 퍼지밸브 및 메카니칼펌프 그리고 헬륨 콤프레셔가 연결되도록 하여 크라이오펌프를 리제너레이션하도록 된 것에 있어서, 메인챔버의 일측에 또다른 게이트밸브와 스로틀밸브 그리고 크라이오펌프를 차례로 설치하여 제어수단에 의해 상기 크라이오펌프를 스위칭하여 운용하도록 하고 상기 크라이오펌프에는 크라이오러퍼 밸브와 퍼지밸브 그리고 헬륨콤프레셔가 연결되도록 함과 동시에 상기 크라이오퍼밸브 및 퍼지밸브가 메카니칼 펌프와 통하여지도록 된 웨이퍼 증착장비의 메인챔버 고진공 유지장치가 제공된다.According to this orphan form for achieving the above object, the gate valve, the throttle valve and the cryopump are installed in the main chamber in order to maintain the high vacuum in the main chamber, and the cryopump valve, the purge valve and the cryopump. In order to regenerate the cryopump by connecting the mechanical pump and the helium compressor, another gate valve, a throttle valve and a cryopump are sequentially installed on one side of the main chamber to switch the cryopump by a control means. The cryopump is provided with a main chamber high vacuum holding device of a wafer deposition apparatus in which a cryopper valve, a purge valve, and a helium compressor are connected to each other, and the cryopper valve and the purge valve are connected with a mechanical pump. do.
이하, 본 고안을 일실시예로 도시한 첨부된 도면 제 2 도를 참고로하여 더욱 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in more detail with reference to FIG. 2 of the accompanying drawings.
첨부도면 제 2 도는 본 고안의 장치를 나타낸 개략도로서, 본 고안의 구성중 종래의 구성과 동일한 부분은 그 설명을 생략하고 동일 부호를 부여하기로 한다.2 is a schematic view showing an apparatus of the present invention, and the same parts as those of the conventional structure of the present invention will be omitted with the same reference numerals.
본 고안은 종래의 장치에 메인챔버(1)를 고진공 상태로 유지시키는 크라이오펌프(13)와, 상기 크라이오펌프를 리제너레이션 시키는 구성을 병렬로 설치하여서 된 것이다.The present invention is made by installing a cryopump 13 for maintaining the main chamber 1 in a high vacuum state and a configuration for regenerating the cryopump in a conventional apparatus.
메인챔버(1)에 설치된 게이트밸브(8)의 일측에 또다른 게이트밸브(14)가 설치되어 있고 상기 게이트밸브에는 가스량을 조절하는 스로틀밸브(15)가 연결되어 있으며 상기 스로틀밸브에는 제어수단(도시는 생략함)에 의해 일측이 크라이오펌프(6)와 스위칭되어 동작되면서 메인챔버(1)를 고진공 상태로 유지시키는 크라이오펌프(13)가 연결되어 있다.Another gate valve 14 is installed at one side of the gate valve 8 installed in the main chamber 1, and a throttle valve 15 for controlling a gas amount is connected to the gate valve, and a control means is provided at the throttle valve. (Not shown) is connected to the cryopump 13 to maintain the main chamber 1 in a high vacuum state, while one side is switched and operated with the cryopump 6.
그리고 크라이오펌프(13)의 일측에는 리제너레이션을 위해 N2를 공급하기 의한 퍼지밸브(16) 및 메카니칼펌프(11)상의 경로를 개폐시키는 크라이오러퍼밸브(17)가 설치되어 있으며 상기 크라이오펌프의 또다른 일측에는 크라이오펌프의 콜드헤드를 냉각시켜주는 헬륨콤프레셔(18)가 연결되어 있다.One side of the cryopump 13 is provided with a purge valve 16 for supplying N 2 for regeneration and a cryopper valve 17 for opening and closing a path on the mechanical pump 11. On the other side of the pump is connected a helium compressor (18) for cooling the cold head of the cryopump.
이와같이 구성된 본 고안의 작용효과를 설명하면 다음과 같다.Referring to the effect of the present invention configured as described above are as follows.
먼저 상기 크라이오펌프(6)(13)는 제어수단에 의해 스위칭되어 1개의 크라이오펌프만이 동작된다.First, the cryopumps 6 and 13 are switched by the control means so that only one cryopump is operated.
따라서 일측의 크라이오펌프가 동작시에는 다른 일측의 크라이오펌프는 리제너레이션을 실시할 수 있게 된다.Therefore, when the cryopump on one side is operated, the cryopump on the other side can be regenerated.
예를들어, 종래의 장치와 같이 크라이오펌프(6)를 동작시켜 웨이퍼의 증착공정을 수행할 경우에는 일측의 크라이오핌프(13)를 리제너레이션하기 위해 게이트밸브(14)를 폐쇄시킨 상태에서 퍼지밸브(16)를 통해 N2를 공급하면 N2에 의해 크라이오펌프내의 온도가 12-15。K에서 300。K로 상승되어 콜드헤드에 흡착되어 있던 분자들이 떨어지게 되므로 크라이오펌프(13)가 퍼지된다.For example, when the cryopump 6 is operated to perform the deposition process of the wafer as in the conventional apparatus, the gate valve 14 is closed to regenerate the cryopump 13 on one side. When N 2 is supplied through the purge valve 16, the temperature in the cryopump increases from 12-15 ° K to 300 ° K by N 2 , causing the molecules adsorbed to the cold head to fall, thereby reducing the cryopump 13. Is purged.
그후 퍼지밸브(16)를 닫고 크라이오러퍼밸브(17)를 개방시킴과 동시에 메카니칼펌프(11)를 열어 크라이오펌프(13)내를 저진공 상태로 만든다음 크라이오러퍼밸브(17)를 폐쇄시켜 크라이오펌프(13)의 진공상태를 계속적으로 유지시킨다.Thereafter, the purge valve 16 is closed and the cryopaur valve 17 is opened, and the mechanical pump 11 is opened to bring the cryopump 13 into a low vacuum state, and then the cryopaffer valve 17 is closed. The vacuum state of the cryopump 13 is continuously maintained.
그후 동작중인 크라이오펌프(6)의 리제너레이션 시점의 8-9시간 전에 다시 크라이오러퍼밸브(17)를 개방시켜 크라이오펌프(13)의 콜드헤드에 부착되었던 가스에 으해 상승되었던 크라이오펌프내의 압력을 메카니칼펌프(11)의 구동으로 저진공 상태로 만든다음 크라이오러퍼밸브를 닫고 헬륨콤프레셔(18)를 동작시켜 크라이오펌프(13)를 저온(12∼15。K)으로 유지시키므로서 크라이오펌프(13)의 리제너레이션이 완료된다.After that, the cryopump valve 17 was opened again 8-9 hours before the regeneration time of the cryopump 6 in operation, and the cryopump which was raised by the gas attached to the cold head of the cryopump 13 was opened. The pressure inside is made low by the operation of the mechanical pump 11, and then the cryopaur valve is closed and the helium compressor 18 is operated to keep the cryopump 13 at a low temperature (12-15 ° K). Regeneration of the cryopump 13 is completed.
이와같이 크라이오펌프(13)의 리제너레이션이 완료되고나면 개방되었던 게이트밸브(8)를 닫음과 동시에 다른 일측의 게이트밸브(14)를 열어 리제너레이션이 완료된 크라이오펌프(13)를 이용하여 메인챔버(1)를 계속적으로 고진공상태로 유지하게 된다.In this way, after the regeneration of the cryopump 13 is completed, the main valve is closed by closing the gate valve 8 that has been opened and opening the gate valve 14 on the other side of the cryopump 13. (1) continues to be kept in a high vacuum.
한편, 동작이 중단된 크라이오펌프(6)는 전술한 바와 같은 동작에 의해 폐쇄시켜 반복적으로 장비의 가동을 중단시키지 않고 사용하게 됨은 이해 가능한 것이다.On the other hand, it is understood that the cryopump 6 in which the operation is stopped is closed by the operation as described above and used without repeatedly stopping the operation of the equipment.
이상에서와 같이 본 고안 장치는 메인챔버(1)에 고진공을 위한 크라이오펌프(6)(13)를 병렬로 설치하여 이들을 스위칭수단에 의해 교대로 운용하도록 되어 있으므로 크라이오펌프의 리제너레이션으로 인한 장비으 가동중단을 미연에 방지하게 됨은 물론 메인챔버 밴트시에도 이들을 동시에 동작시킬 수 있게 되므로 펌프다운 타임을 줄일 수 있게되는 효과를 가지게 된다.As described above, the device of the present invention installs the cryopumps 6 and 13 for the high vacuum in the main chamber 1 in parallel and operates them alternately by switching means, resulting in the regeneration of the cryopumps. Not only prevents downtime but also can operate them at the same time as the main chamber, which has the effect of reducing the pump down time.
또한 어느하나의 크라이오펌프가 고장나더라도 계속해서 장비를 가동시키는 상태에서 리페어(Repair)시간을 갖을 수 있게되므로 장비의 가동율을 극대화시키게 되는 효과도 얻게 된다.In addition, even if one cryopump fails, the repair time can be maintained while the equipment continues to operate, thereby maximizing the operation rate of the equipment.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930003857U KR950009253Y1 (en) | 1993-03-16 | 1993-03-16 | Main chamber high vacuum maintaining apparatus |
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| Application Number | Priority Date | Filing Date | Title |
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| KR2019930003857U KR950009253Y1 (en) | 1993-03-16 | 1993-03-16 | Main chamber high vacuum maintaining apparatus |
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| Publication Number | Publication Date |
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| KR940023543U KR940023543U (en) | 1994-10-22 |
| KR950009253Y1 true KR950009253Y1 (en) | 1995-10-23 |
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