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KR950003908A - Structure and manufacturing method of TFT-LCD storage capacitor - Google Patents

Structure and manufacturing method of TFT-LCD storage capacitor Download PDF

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Publication number
KR950003908A
KR950003908A KR1019930014101A KR930014101A KR950003908A KR 950003908 A KR950003908 A KR 950003908A KR 1019930014101 A KR1019930014101 A KR 1019930014101A KR 930014101 A KR930014101 A KR 930014101A KR 950003908 A KR950003908 A KR 950003908A
Authority
KR
South Korea
Prior art keywords
electrode
storage capacitor
insulating film
tft
forming
Prior art date
Application number
KR1019930014101A
Other languages
Korean (ko)
Inventor
양명수
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019930014101A priority Critical patent/KR950003908A/en
Publication of KR950003908A publication Critical patent/KR950003908A/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 TFT-LCD의 저장 커패시터 구조 및 제조방법에 관한 것으로, 저장 커패시터의 저장용량을 만족시키면서 개구율을 향상시킬 수 있는 저장 커패시터의 구조 및 제조방법을 제공함에 그 목적이 있다.The present invention relates to a storage capacitor structure and a manufacturing method of a TFT-LCD, and an object thereof is to provide a structure and a manufacturing method of a storage capacitor that can improve the opening ratio while satisfying the storage capacity of the storage capacitor.

본 발명은 상기 목적을 달성하기 위해 도핑된 다결정 실리콘 게이트(12)를 접지선으로 하고, 게이트 절연막(5)밑의 다결정 실리콘층을 도핑하여 층간절연막(13)위의 화소전극(9)과 접촉한 2층구조로 형성함을 특징으로 한다.In order to achieve the above object, the present invention uses the doped polycrystalline silicon gate 12 as a ground line, and the doped polycrystalline silicon layer under the gate insulating film 5 contacts the pixel electrode 9 on the interlayer insulating film 13. It is characterized by forming in a two-layer structure.

Description

티에프티-엘시디(TFT-LCD)의 저장 커패시터 구조 및 제조방법Structure and manufacturing method of TFT-LCD storage capacitor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 종래 기술의 TFT와 저장 커패시터 제조방법을 나타낸 공정순서도, 제 2 도는 종래 기술의 TFT와 저장 커패시터의 레이아웃(lay out)도, 제 3 도는 본 발명의 TFT와 저장 커패시터의 제조방법을 나타낸 공정순서도, 제 4 도는 본 발명의 TFT와 저장 커패시터 레이아웃도.1 is a process flowchart showing a conventional TFT and a storage capacitor manufacturing method, FIG. 2 is a layout diagram of a prior art TFT and a storage capacitor, and FIG. 3 is a TFT and a storage method manufacturing method according to the present invention. 4 is a process flowchart of the TFT and the storage capacitor of the present invention.

Claims (4)

TFT-LCD에 있어서, 기판(1)상에 형성되는 커패시터 제 1 전극(12), 상기 제 1 전극(12)상에 형성된 제 1 절연막(4), 상기 제 1 절연막(4)상에 형성되며 도핑된 다결정 실리콘으로 이루어진 접지전극(6), 상기 접지전극(6)상에 형성된 제 2 절연막(7), 상기 제 2 절연막(7)상에 형성되며 상기 제 1 전극(12)과 연결된 화소전극(9)으로 구성함으로서 병렬형 2층구조를 특징으로 하는 TFT-LCD의 축적방식 저장 커패시터.In the TFT-LCD, a capacitor first electrode 12 formed on the substrate 1, a first insulating film 4 formed on the first electrode 12, and formed on the first insulating film 4 are formed. A ground electrode 6 made of doped polycrystalline silicon, a second insulating film 7 formed on the ground electrode 6, and a pixel electrode formed on the second insulating film 7 and connected to the first electrode 12. The storage type storage capacitor of the TFT-LCD characterized by comprising (9) the parallel two-layer structure. 절연기판(1)상에 진성 반도체를 증착하고 패턴닝하여 활성층(3)과 저장 커패시터의 제 1 전극(12)을 형성하고 전면에 제 1 절연막(4)을 형성하는 제 1 과정, 이온주입으로 상기 제 1 전극(12)만을 도핑시키고 전면에 도핑된 반도체를 증착하고 패턴닝하여 게이트 전극(5)과 저장 커패시터의 접지전극(6)을 형성하는 제 2 과정, 상기 게이트 전극(5)을 마스크로 하여 상기 활성층(3)에 이온주입하여 소오스-드레인 영역(3a,3b)을 형성하는 제 3 과정, 전면에 제 2 절연막(7)을 증착하고 소오스-드레인 영역(3a,3b)부와 저장 커패시터의 제 1 전극(12)의 일부에 컨택홀을 형성한 후, 전면에 ITO막을 증착하고 패터닝하여 화소전극(9)을 형성하는 제 4 과정, 소오스-드레인 전극(10,8)을 형성하는 제 5 과정으로 이루어짐을 특징으로 하는 축적방식저장 커패시터 제조방법.By injecting and patterning an intrinsic semiconductor on the insulating substrate 1 to form the first electrode 12 of the active layer 3 and the storage capacitor and the first insulating film 4 on the entire surface, by ion implantation. A second process of forming the gate electrode 5 and the ground electrode 6 of the storage capacitor by doping only the first electrode 12 and depositing and patterning the doped semiconductor on the entire surface, and masking the gate electrode 5. In the third process of ion implantation into the active layer 3 to form the source-drain regions 3a and 3b, the second insulating layer 7 is deposited on the entire surface and stored with the source-drain regions 3a and 3b. After forming a contact hole in a portion of the first electrode 12 of the capacitor, a fourth process of forming a pixel electrode 9 by depositing and patterning an ITO film on the entire surface, and forming source-drain electrodes 10 and 8 Accumulation method storage capacitor manufacturing method characterized in that consisting of a fifth process. 제 2 항에 있어서, 제 1 전극(12), 접지전극(6), 게이트 전극(5)은 도핑된 다결정 실리콘으로 형성됨을 특징으로 하는 축적방식 저장 커패시터 제조방법.3. A method according to claim 2, wherein the first electrode (12), ground electrode (6) and gate electrode (5) are formed of doped polycrystalline silicon. 제 2 항에 있어서, 상기 제 1 전극(12)의 면적은 접지전극(6)의 면적보다 크게 형성함을 특징으로 하는 축적방식 저장 커패시터 제조방법.The method of claim 2, wherein the area of the first electrode (12) is larger than that of the ground electrode (6). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930014101A 1993-07-24 1993-07-24 Structure and manufacturing method of TFT-LCD storage capacitor KR950003908A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930014101A KR950003908A (en) 1993-07-24 1993-07-24 Structure and manufacturing method of TFT-LCD storage capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930014101A KR950003908A (en) 1993-07-24 1993-07-24 Structure and manufacturing method of TFT-LCD storage capacitor

Publications (1)

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KR950003908A true KR950003908A (en) 1995-02-17

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030035219A (en) * 2001-10-30 2003-05-09 엘지.필립스 엘시디 주식회사 an active matrix organic electroluminescence display and a manufacturing method of the same
KR100409259B1 (en) * 2000-07-24 2003-12-18 마쯔시다덴기산교 가부시키가이샤 Liquid crystal apparatus
KR100453633B1 (en) * 2001-12-29 2004-10-20 엘지.필립스 엘시디 주식회사 an active matrix organic electroluminescence display and a manufacturing method of the same
KR100796654B1 (en) * 2006-06-02 2008-01-22 삼성에스디아이 주식회사 OLED display and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100409259B1 (en) * 2000-07-24 2003-12-18 마쯔시다덴기산교 가부시키가이샤 Liquid crystal apparatus
KR20030035219A (en) * 2001-10-30 2003-05-09 엘지.필립스 엘시디 주식회사 an active matrix organic electroluminescence display and a manufacturing method of the same
KR100453633B1 (en) * 2001-12-29 2004-10-20 엘지.필립스 엘시디 주식회사 an active matrix organic electroluminescence display and a manufacturing method of the same
KR100796654B1 (en) * 2006-06-02 2008-01-22 삼성에스디아이 주식회사 OLED display and manufacturing method thereof

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19930724

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