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KR940021758A - Deposition Method of Tungsten Thin Film - Google Patents

Deposition Method of Tungsten Thin Film Download PDF

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Publication number
KR940021758A
KR940021758A KR1019930005320A KR930005320A KR940021758A KR 940021758 A KR940021758 A KR 940021758A KR 1019930005320 A KR1019930005320 A KR 1019930005320A KR 930005320 A KR930005320 A KR 930005320A KR 940021758 A KR940021758 A KR 940021758A
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South Korea
Prior art keywords
thin film
gas
tungsten thin
sih
chemical vapor
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KR1019930005320A
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Korean (ko)
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KR950007671B1 (en
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김형준
손재현
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김형준
손재현
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Priority to KR1019930005320A priority Critical patent/KR950007671B1/en
Publication of KR940021758A publication Critical patent/KR940021758A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 저압화합증착법(LP CVD)을 이용하여 SiH4또는 WF6의 원료 가스의 공급을 주기적으로 단속함으로써 텅스텐 박막을 절연막 상에 직접 형성시킬 수 있는 텅스텐 박막 증착방법에 관한 것이다.The present invention relates to a tungsten thin film deposition method capable of forming a tungsten thin film directly on an insulating film by periodically interrupting the supply of a source gas of SiH 4 or WF 6 using low pressure chemical vapor deposition (LP CVD).

본 발명은 텅스텐 박막이 절연막의 상부에 직접 형성될 수 있는 저압화학 증착방법을 제공하고자 하는데 그 목적이 있고, 통상적인 저압화학증착법의 원료가스인 SiH4또는 WF6가스의 공급을 단속시키는 것을 특징으로 한다.The present invention provides a low pressure chemical vapor deposition method in which a tungsten thin film can be directly formed on an insulating film, and an object thereof is to interrupt supply of SiH 4 or WF 6 gas, which is a raw material gas of a conventional low pressure chemical vapor deposition method. It is done.

본 발명은 비저항이 비교적 낮고 두께가 작은 텅스텐 박막의 게이트 전극을 절연막의 상부에 직접 증착시킬 수 있어 이러한 게이트 전극을 이용한 MOSFET의 동작속도를 개선시키고, 또한, 게이트 전극 영역의 단차를 감소시킬 수 있는 효과가 있게 된다. 아울러 양호한 고온 공정성이 있는 텅스텐 박막을 콘택배선재로 사용하므로 반도체소자의 다층 배선 구조를 보다 용이하게 형성시킬 수 있는 효과가 있게 된다.According to the present invention, a gate electrode of a tungsten thin film having a relatively low specific resistance and a small thickness can be directly deposited on the upper portion of the insulating film, thereby improving the operation speed of the MOSFET using the gate electrode, and also reducing the step difference in the gate electrode region. It will work. In addition, since the tungsten thin film having good high temperature processability is used as the contact wiring material, the multilayer wiring structure of the semiconductor device can be more easily formed.

Description

텅스텐 박막의 증착 방법Deposition Method of Tungsten Thin Film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 (A) 내지 (C)는 본 발명에 따른 텅스텐 박막의 증착방법을 콘택영역이 없는 절연막에서 설명하기 위한 제조공정도,1 (A) to (C) is a manufacturing process diagram for explaining a method of depositing a tungsten thin film according to the present invention in an insulating film without a contact region;

제2도 (A) 및 (B)는 본 발명에 따른 텅스텐 박막의 증착방법을 콘택영역이 있는 절연막에서 설명하기 위한 제조공정도.2 (A) and (B) are manufacturing process diagrams for explaining the method of depositing a tungsten thin film according to the present invention with an insulating film having a contact region.

Claims (9)

반도체 기판의 표면상에 절연막을 형성하는 단계와 상기 절연막의 상부에 텅스텐 박막을 증착시키는 단계를 가지는 반도체 제조방법에 있어서, 온도가 300℃~1000℃이고, 압력이 10mTorr-1Torr이며, 수소 분위기에서 SiH4와 WF6이 원료 가스의 비율이 0-2인 상태로 상기 원료가스중 일 또는 양 가스를 단속적으로 공급하여 텅스텐 박막을 상기 절연막을 상부에 형성시키는 저압화학증착(LP CVD) 단계를 포함하는 텅스텐 박막 증착방법.A semiconductor manufacturing method comprising forming an insulating film on a surface of a semiconductor substrate and depositing a tungsten thin film on the insulating film, wherein the temperature is 300 ° C. to 1000 ° C., the pressure is 10 mTorr −1 Torr, and in a hydrogen atmosphere. Low Pressure Chemical Vapor Deposition (LP CVD) step of forming a tungsten thin film on the insulating film by intermittently supplying one or both gases of the source gas with SiH 4 and WF 6 having a ratio of source gas of 0-2. Tungsten thin film deposition method. 제1항에 있어서, 상기 WF6가스 또는 SiH4가스중 어느 한 가스는 1-20초의 단위로 공급되는 것을 특징으로 하는 텅스텐 박막 증착 방법.The method of claim 1, wherein any one of the WF 6 gas and the SiH 4 gas is supplied in units of 1-20 seconds. 제1항 또는 제2항에 있어서, 상기 WF6가스는 1회이상의 주기를 가지고 단속적으로 공급되고 상기 SiH4가스는 일정하게 공급되는 것을 특징으로 하는 텅스텐 박막 증착방법.The method of claim 1 or 2, wherein the WF 6 gas is intermittently supplied with one or more cycles and the SiH 4 gas is constantly supplied. 제1항에 있어서, 상기 SiH4가스는 1회이상의 주기를 가지고 단속적으로 공급되고, 상기 WF6가스는 일정하게 공급되는 것을 특징으로 하는 텅스텐 박막 증착방법.The method of claim 1, wherein the SiH 4 gas is intermittently supplied with one or more cycles, and the WF 6 gas is constantly supplied. 제1항에 있어서, 상기 저압 화학증착단계가 완료된 후 상기 SiH4와 WF6의 비율을 다단계로 줄이는 저압화학증착 단계가 추가로 실시되는 것을 특징으로 하는 텅스텐 박막 증착방법.The method of claim 1, wherein after the low pressure chemical vapor deposition step is completed, a low pressure chemical vapor deposition step of reducing the ratio of SiH 4 and WF 6 into multiple steps is further performed. 제3항에 있어서, 상기 WF6가스는 5-10초 간격의 주기를 가지고 단속적으로 공급되는 것을 특징으로 하는 텅스텐 박막 증착방법.The method of claim 3, wherein the WF 6 gas is intermittently supplied at intervals of 5-10 seconds. 제1항에 있어서, 상기 저압화학증착 단계는 온도가 600℃-800℃이고, 압력이 50mTorr-100mmTorr이며 SiH4와 WF6가스의 비율이 0.6-1로 되는 상태에서 실시되는 것을 특징으로 하는 텅스텐 박막 증착방법.The method of claim 1, wherein the low pressure chemical vapor deposition step is carried out in a state in which the temperature is 600 ℃-800 ℃, the pressure is 50mTorr-100mmTorr and the ratio of SiH 4 and WF 6 gas is 0.6-1 Thin film deposition method. 제1항에 있어서, 상기 절연막이 SiO2, ONO, Si3N4, PSG 또는 BPSG인 것을 특징으로 하는 텅스텐 박막 증착방법.The method of claim 1, wherein the tungsten film deposition method, characterized in that the insulating layer is SiO 2, ONO, the Si 3 N 4, PSG or BPSG. 제1항에 있어서, 상기 텅스텐 박막은 게이트 전극 또는 콘택배선재임을 특징으로 하는 텅스텐 박막 증착방법.The method of claim 1, wherein the tungsten thin film is a gate electrode or a contact wiring material. ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the initial application.
KR1019930005320A 1993-03-31 1993-03-31 Method for evaporation a thin film of tungsten KR950007671B1 (en)

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KR940021758A true KR940021758A (en) 1994-10-19
KR950007671B1 KR950007671B1 (en) 1995-07-14

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100477819B1 (en) * 1997-12-27 2005-06-29 주식회사 하이닉스반도체 Barrier Metal Film Formation Method of Semiconductor Device
US10886141B2 (en) 2018-07-30 2021-01-05 Wonik Ips Co., Ltd. Method of depositing tungsten

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100477819B1 (en) * 1997-12-27 2005-06-29 주식회사 하이닉스반도체 Barrier Metal Film Formation Method of Semiconductor Device
US10886141B2 (en) 2018-07-30 2021-01-05 Wonik Ips Co., Ltd. Method of depositing tungsten

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KR950007671B1 (en) 1995-07-14

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