KR940007231A

KR940007231A - Single Crystal Raw Material Supply Method

Info

Publication number: KR940007231A
Application number: KR1019920016684A
Authority: KR
Inventors: 전경호
Original assignee: 이헌조; 주식회사 금성사
Priority date: 1992-09-14
Filing date: 1992-09-14
Publication date: 1994-04-26

Abstract

본 발명은 단결정 원료공급방법에 관한 것으로, 가열소자에 의해 가열되는 내열관의 내부에 설치된 도가니의 상부에서 봉상으로 성형한 봉상원료를 하강기구에 의해 하강시키면서 봉상원료의 하단부를 점차 용융시켜 원료를 공급하여 단결정을 제조함을 특징으로 하고 있으며, 상기 봉상원료는 연속적으로 공급하기 위하여 복수개를 연결하여 사용하고, 열충격으로 부터 보호하기 위하여 봉상원료를 하단 일부를 남기고 보호관으로 감싸 보호하게 된다. 이러한 본 발명은 봉상원료를 하강하는 속도에 따라 연속적으로 보충하여 조성 편차를 억제할 수 있으므로 균질한 단결정을 성장시킬 수 있고, 따라서, 단결정의 성장수율을 증대시킬 수 있다. 또한 백금도가니 및 백금튜브를 사용하지 않아 보충원료가 용융할 때 백금 혼입을 감소할 수 있어 고품위의 단결정을 성장시킬 수 있는 이점 등이 있다.The present invention relates to a single crystal raw material supply method, and gradually melting the lower end of the rod-like raw material while lowering the rod-shaped raw material formed in the shape of a rod from the upper portion of the crucible installed inside the heat-resistant tube heated by the heating element by the lowering mechanism. It characterized in that the single crystal is supplied by supplying, the rod-like raw material is used to connect a plurality of in order to supply continuously, and to protect the rod-like raw material wrapped in a protective tube leaving a portion of the lower end to protect from thermal shock. The present invention can continuously replenish the rod-like raw material in accordance with the rate of descending, thereby suppressing the variation of the composition, so that homogeneous single crystals can be grown, thereby increasing the growth yield of the single crystals. In addition, the use of platinum crucibles and platinum tubes can reduce platinum incorporation when the replenishment material is melted, and thus has the advantage of growing high quality single crystals.

Description

Single Crystal Raw Material Supply Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 단결정 육성장장치의 구성을 보인 단면도 및 온도 구배도,2 is a cross-sectional view and a temperature gradient diagram showing the configuration of the single crystal growing apparatus according to the present invention;

제3도는 본 발명에 의한 봉상원료의 구성도.3 is a block diagram of a rod-like raw material according to the present invention.

Claims

A single crystal raw material supply method, characterized in that a single crystal is produced by gradually melting the lower end of a rod-like raw material while lowering the rod-shaped raw material shaped into a rod from a top of a crucible installed inside a heat-resistant tube heated by a heating element by a lowering mechanism.

The method of claim 1, wherein in order to protect the rod-like material from thermal shock, the single-crystal raw material supply method characterized in that the rod-like material is protected by wrapping a protective tube leaving a lower portion.

The single crystal raw material supply method according to claim 1, wherein the rod-like raw material is continuously supplied while connecting a plurality of rod-like raw materials.

The material of claim 3, wherein the plurality of rod-like raw materials have grooves formed at upper ends thereof, and protrusions are formed at lower end portions thereof to be fitted by grooves and protrusions, and formed in communication with each other in the fitting portions. Single crystal raw material supply method characterized in that the supply is continuously connected by inserting the pin.

※ Note: The disclosure is based on the initial application.