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KR930017126A - 반도체 압력센서 및 그 제조방법 - Google Patents

반도체 압력센서 및 그 제조방법 Download PDF

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Publication number
KR930017126A
KR930017126A KR1019920025987A KR920025987A KR930017126A KR 930017126 A KR930017126 A KR 930017126A KR 1019920025987 A KR1019920025987 A KR 1019920025987A KR 920025987 A KR920025987 A KR 920025987A KR 930017126 A KR930017126 A KR 930017126A
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KR
South Korea
Prior art keywords
pressure sensor
semiconductor pressure
sensor chip
pedestal
external resin
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Application number
KR1019920025987A
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English (en)
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KR970000779B1 (ko
Inventor
료지 다카하시
히로시 오타니
세이지 다케무라
데쓰야 히로세
Original Assignee
시키모리야
미쓰비시덴키가부시키가이샤
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Publication of KR930017126A publication Critical patent/KR930017126A/ko
Application granted granted Critical
Publication of KR970000779B1 publication Critical patent/KR970000779B1/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0084—Electrical connection means to the outside of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

이 발명은, 경도를 향상시켜 반도체 압력센서칩이 변형되지 않도록 하고, 다시 외장수지가 다이어프램부에 흘러들지 않고, 정도좋고, 신뢰성이 높은 반도체 압력센서를 얻는것을 목적으로 한다.
반도체 압력센서칩(1)의 표면에는, 일체 몰드시에 외장수지가 다이어 프램부로 흘러 나오는 것을 방지하기 위해, 수지로 만들어진 둑(21)이 피에조저항체(2)의 외주를 둘러서 설치되어 있다.
또, 외장수지의 선팽창계수를 반도체 압력센서칩(1)의 선팽창계수보다 크고, 대좌의 선팽창계수를 반도체 압력센서(1)의 선팽창계수 보다 작게하는 동시에, 대좌 및 외장수지의 체적을 소정의치로 함으로써, 반도체 압력센서칩(1)에 관한 변형을 감소시켜, 정도가 높고 신뢰성이 향상된 반도체 압력센서를 얻을 수 있다.

Description

반도체 압력센서 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 실시예1에 대한 반도체 압력센서를 표시하는 요부 평면도, 제2도는 외장수지로 일체로 몰드하였을때의 반도체압력센서를 표시하는 평면도, 제3도는 제2도에 표시한 반도체 압력센서의 단면도, 제4도는 이 발명의 실시예2에 의해 반도체 압력센서를 체결하고 있는 상태를 표시하는 단면도, 제5도는 제4도와 같은 금형의 구성을 표시하는 개략 단면도, 제6도는 이 발명의 또다른 실시예에 의한 반도체압력센서를 표시하는 요부평면도, 제7도는 이 발명의 또다른 실시예에 의한 반도체 압력센서를 표시하는 요부평면도, 제8도는 이 발명의 또다른 실시예에 의한 반도체 압력센서를 표시하는 요부 평면도, 제9도는 이 발명의 또다른 실시예에 의한 반도체 압력센서를 표시하는 요부평면도, 제10도는 제9도에 표시한 반도체 압력센서의 단면도, 제11도는 이 발명의 또다른 실시예에 의한 이며 수압형의 반도체 압력센서를 표시하는 단면도.

Claims (4)

  1. 표면에 피에조저항체가 설치되고 이면에 다이어프램부가 형성된 반도체압력센서칩과, 이 반도체 압력센서칩을 올려놓는 대좌와, 이 대좌를 올려놓는 스템과, 상기 반도체압력센서칩의 측부근방 및 상기 대좌의 측부를 덮고, 스템상에 몰드된 외장수지를 구비한 반도체 압력센서로서, 상기 반도체 압력센서칩 표면중 상기 피에조항체가 상기 다이어프램부의 외주의 위치에, 상기 외장수지의 몰드시에 외장수지가 다이어프램부에 흘러들지 않도록 하는 둑을 설치한 것을 특징으로 하는 반도체 압력센서.
  2. 표면에 피에조저항체가 설치되고, 이면에 다이어프램부가 형성된 반도체 압력센서칩과, 이 반도체 압력센서칩을 올려놓는 대좌와, 이 대좌를 올려놓는 스템과, 상기 반도체압력센서칩의 측부근방 및 상기 대좌의 측부를 덮고, 스템상에 몰드된 외장수지를 구비한 반도체 압력센서로서, 상기 반도체 압력센서 칩, 대좌 및 외장수지의 열 팽창율을 각각 α0, α1, α2로 해서 α2〉α0〉α1이 되는 재료로 구성하고, 반도체 압력센서가 고온에서 상온으로 되돌아갔을때, 상기 반도체 압력센서칩이 상기 대좌로부터 받는 인장력과, 상기 반도체 압력센서칩이 상기 외장수지로 부터 받는 압력출력과 상쇄되도록 상기 대좌 및 상기 반도체 압력센서칩의 체적을 조절한 것을 특징으로 하는 반도체 압력센서.
  3. 표면에 피에조저항체가 설치되고, 이면에 다이어프램부가 형성된 반도체 압력센서칩과, 이 반도체 압력센서칩을 올려놓는 대좌와, 이 대좌를 올려놓는 스텝과, 상기 반도체압력센서칩의 측부근방 및 상기 대좌의 측부를 덮어서 스템상에 몰드된 외장수지를 구비한 반도체 압력센서로 상기 스템과 상기 외장수지와의 접합면에 접합면적확대수단을 설치한 것을 특징으로 하는 반도체 압력센서.
  4. 반도체 압력센서칩표면의 피에조저항체 및 다이어 프램부의 외주에 댐을 설치하고, 이 반도체압력센서칩, 대좌 및 스템을 접착하고, 상기 반도체 압력센서칩의 전극과 상기 스템에 설치된 외부접속용 리드를 전기적으로 접속하고, 다시 상기 팸으로부터 외측에, 상기 반도체 압력센서칩의 측부근방, 상기 대좌의 측부, 상기 외부접속용 리드의 반도체 압력센서칩측 돌기부를 덮어서 외장수지로 몰드하는 것을 특징으로 하는 반도체 압력센서의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920025987A 1992-01-13 1992-12-29 반도체 압력센서 및 그 제조방법 KR970000779B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP92-003730 1992-01-13
JP373092 1992-01-13
JP92-032008 1992-02-19
JP3200892 1992-02-19
JP4225942A JPH05299671A (ja) 1992-01-13 1992-08-25 半導体圧力センサ及びその製造方法
JP92-225942 1992-08-25

Publications (2)

Publication Number Publication Date
KR930017126A true KR930017126A (ko) 1993-08-30
KR970000779B1 KR970000779B1 (ko) 1997-01-20

Family

ID=26337366

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920025987A KR970000779B1 (ko) 1992-01-13 1992-12-29 반도체 압력센서 및 그 제조방법

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JP (1) JPH05299671A (ko)
KR (1) KR970000779B1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010190819A (ja) * 2009-02-20 2010-09-02 Denso Corp センサ装置
JP5802962B2 (ja) * 2011-12-01 2015-11-04 ジヤトコ株式会社 トランスミッションケース
JP5973357B2 (ja) * 2013-02-05 2016-08-23 株式会社鷺宮製作所 圧力検知ユニット及び圧力検知ユニットの製造方法
JP6725852B2 (ja) * 2018-09-14 2020-07-22 ミツミ電機株式会社 半導体センサ装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5315763A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Resin sealed type semiconductor device
JPS5429974A (en) * 1977-08-10 1979-03-06 Hitachi Ltd Semiconductor device of resin sealing type
US4377368A (en) * 1980-12-10 1983-03-22 F. Jos. Lamb Company Escapement mechanism
JPS62144368A (ja) * 1985-12-19 1987-06-27 Nec Corp 半導体式圧力センサの保護膜
JPH02296373A (ja) * 1989-05-10 1990-12-06 Mitsubishi Electric Corp 半導体装置

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Publication number Publication date
KR970000779B1 (ko) 1997-01-20
JPH05299671A (ja) 1993-11-12

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