KR930005734B1 - Semiconductor memory device having data bus reset circuit - Google Patents

Semiconductor memory device having data bus reset circuit

Info

Publication number: KR930005734B1
Authority: KR; South Korea
Prior art keywords: memory device; semiconductor memory; data bus; reset circuit; bus reset
Prior art date: 1986-09-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

KR8710374A

Other languages

English (en)

Other versions

KR880004483A (ko

Inventor

Masao Nakano

Tsuyoshi Ohira

Hirohiko Mochizuki

Yukinori Kodama

Hidenori Nomura

Original Assignee

Fujitsu Ltd

Fujitsu Vlsi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-09-19

Filing date

1987-09-18

Publication date

1993-06-24

1987-09-18 Application filed by Fujitsu Ltd, Fujitsu Vlsi Ltd filed Critical Fujitsu Ltd

1988-06-04 Publication of KR880004483A publication Critical patent/KR880004483A/ko

1993-06-24 Application granted granted Critical

1993-06-24 Publication of KR930005734B1 publication Critical patent/KR930005734B1/ko

2007-09-18 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Dram (AREA)
Static Random-Access Memory (AREA)

KR8710374A 1986-09-19 1987-09-18 Semiconductor memory device having data bus reset circuit Expired - Lifetime KR930005734B1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP221020		1986-09-19
JP61221020A JPS6376193A (ja)	1986-09-19	1986-09-19	半導体記憶装置

Publications (2)

Publication Number	Publication Date
KR880004483A KR880004483A (ko)	1988-06-04
KR930005734B1 true KR930005734B1 (en)	1993-06-24

Family

ID=16760225

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR8710374A Expired - Lifetime KR930005734B1 (en)	1986-09-19	1987-09-18	Semiconductor memory device having data bus reset circuit

Country Status (5)

Country	Link
US (1)	US4870617A (ko)
EP (1)	EP0261609B1 (ko)
JP (1)	JPS6376193A (ko)
KR (1)	KR930005734B1 (ko)
DE (1)	DE3786382T2 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0268796A (ja) *	1988-09-02	1990-03-08	Fujitsu Ltd	半導体記憶装置
JPH02146180A (ja) *	1988-11-28	1990-06-05	Nec Corp	半導体メモリ装置
JP2545481B2 (ja) *	1990-03-09	1996-10-16	富士通株式会社	半導体記憶装置
EP0457347B1 (en) *	1990-05-18	1997-01-22	Nec Corporation	Semiconductor memory device
JPH0438793A (ja) *	1990-06-04	1992-02-07	Toshiba Corp	データ転送制御回路およびこれを用いたダイナミック型半導体記憶装置
KR940001644B1 (ko) *	1991-05-24	1994-02-28	삼성전자 주식회사	메모리 장치의 입출력 라인 프리차아지 방법
JP2748053B2 (ja) *	1991-07-23	1998-05-06	三菱電機株式会社	半導体記憶装置
JP3255017B2 (ja) *	1996-05-24	2002-02-12	日本電気株式会社	半導体記憶装置
JPH11149770A (ja) *	1997-11-14	1999-06-02	Mitsubishi Electric Corp	同期型半導体記憶装置
JP2000231791A (ja) *	1998-12-10	2000-08-22	Fujitsu Ltd	半導体記憶装置及びデータバスのリセット方法
JP2003331578A (ja) *	2002-05-14	2003-11-21	Toshiba Corp	メモリシステム及びそのデータ書き込み方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3202028A1 (de) *	1982-01-22	1983-07-28	Siemens AG, 1000 Berlin und 8000 München	Integrieter dynamischer schreib-lese-speicher
JPS58159294A (ja) *	1982-03-17	1983-09-21	Hitachi Ltd	半導体記憶装置
JPS59121691A (ja) *	1982-12-01	1984-07-13	Fujitsu Ltd	ダイナミツク型半導体記憶装置
JPS59132492A (ja) *	1982-12-22	1984-07-30	Fujitsu Ltd	半導体記憶装置
JPS61110394A (ja) *	1984-10-31	1986-05-28	Mitsubishi Electric Corp	半導体記憶装置

1986
- 1986-09-19 JP JP61221020A patent/JPS6376193A/ja active Granted
1987
- 1987-09-16 US US07/097,558 patent/US4870617A/en not_active Expired - Lifetime
- 1987-09-18 DE DE87113716T patent/DE3786382T2/de not_active Expired - Fee Related
- 1987-09-18 EP EP87113716A patent/EP0261609B1/en not_active Expired - Lifetime
- 1987-09-18 KR KR8710374A patent/KR930005734B1/ko not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE3786382T2 (de)	1994-01-27
EP0261609B1 (en)	1993-06-30
KR880004483A (ko)	1988-06-04
EP0261609A3 (en)	1990-07-11
JPS6376193A (ja)	1988-04-06
DE3786382D1 (de)	1993-08-05
EP0261609A2 (en)	1988-03-30
US4870617A (en)	1989-09-26
JPH0447396B2 (ko)	1992-08-03

Publication	Publication Date	Title
EP0253631A3 (en)	1989-08-30	Semiconductor memory device
GB2135485B (en)	1986-11-26	Semiconductor memory device
DE3471550D1 (en)	1988-06-30	Semiconductor memory device
KR870007515A (ko)	1987-08-19	반도체 기억회로
DE3279429D1 (en)	1989-03-09	Semiconductor integrated memory circuit
EP0242981A3 (en)	1989-12-13	Semiconductor memory device having redundancy circuit portion
EP0143647A3 (en)	1988-03-16	Semiconductor memory device
EP0234891A3 (en)	1987-11-25	Semiconductor memory device
EP0130798A3 (en)	1988-08-31	Semiconductor memory device
EP0145606A3 (en)	1986-01-29	Semiconductor memory device
KR960001782B1 (en)	1996-02-05	Integrated memory circuit
EP0145488A3 (en)	1988-01-20	Semiconductor memory device
EP0239187A3 (en)	1990-10-03	Semiconductor memory device
EP0269106A3 (en)	1990-07-04	Semiconductor memory device
EP0251559A3 (en)	1990-07-18	Semiconductor memory device
EP0273233A3 (en)	1990-10-03	Semiconductor memory control circuit
GB2143698B (en)	1985-09-18	Semiconductor integrated memory circuit
GB2190558B (en)	1989-11-29	Semiconductor memory circuit
EP0481532A3 (en)	1992-09-16	Semiconductor memory device
EP0249413A3 (en)	1989-12-27	Semiconductor memory device
EP0240155A3 (en)	1990-04-25	Semiconductor memory device
EP0250242A3 (en)	1989-10-11	Semiconductor memory device having erroneous write operation preventing circuit
EP0130793A3 (en)	1987-09-30	Semiconductor memory device
EP0122081A3 (en)	1988-03-09	Semiconductor memory device
KR930005734B1 (en)	1993-06-24	Semiconductor memory device having data bus reset circuit

Legal Events

Date	Code	Title	Description
1987-09-18	A201	Request for examination
1990-08-31	E902	Notification of reason for refusal
1991-07-27	J2X1	Appeal (before the patent court)	Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL
1992-10-05	E902	Notification of reason for refusal
1993-05-29	G160	Decision to publish patent application
1993-09-16	E701	Decision to grant or registration of patent right
1993-09-28	GRNT	Written decision to grant
2004-06-09	FPAY	Annual fee payment	Payment date: 20040609 Year of fee payment: 12
2005-06-25	LAPS	Lapse due to unpaid annual fee