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KR930004419A - Coating materials and uses thereof - Google Patents

Coating materials and uses thereof Download PDF

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Publication number
KR930004419A
KR930004419A KR1019920015251A KR920015251A KR930004419A KR 930004419 A KR930004419 A KR 930004419A KR 1019920015251 A KR1019920015251 A KR 1019920015251A KR 920015251 A KR920015251 A KR 920015251A KR 930004419 A KR930004419 A KR 930004419A
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layer
general formula
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pyrrolopyrrole
formula
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진 미즈구치
길레 제랄드
끌로드 로카트 알랑
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베르너 발데크
시바-가이기 에이지
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/06—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
    • G03G5/0622—Heterocyclic compounds
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    • G03G5/0646—Heterocyclic compounds containing two or more hetero rings in the same ring system
    • G03G5/0648—Heterocyclic compounds containing two or more hetero rings in the same ring system containing two relevant rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/06—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
    • G03G5/0622—Heterocyclic compounds
    • G03G5/0644—Heterocyclic compounds containing two or more hetero rings
    • G03G5/0661—Heterocyclic compounds containing two or more hetero rings in different ring systems, each system containing at least one hetero ring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Laminated Bodies (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

내용 없음.No content.

Description

피복 물질 및 이의 용도Coating materials and uses thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (25)

적어도 부분적으로는 강산의 염으로 전환되는 하기 일반식(Ⅰ)의 피롤로피롤 또는 이의 혼합물 박층으로 적어도 한 면을 피복시킨 기판을 포함함을 특징으로 하는 피복물질.A coating material comprising a substrate coated with at least one side with a thin layer of pyrrolopyrrole or mixtures thereof of formula (I) at least partially converted to salts of strong acids. 상기 식에서, R1은 3급－아미노 그룹에 의해 치환된 하기 일반식의 페닐 또는 피리딜 라디칼이거나,Wherein R 1 is a phenyl or pyridyl radical of the general formula substituted by a tert-amino group, 하기 일반식의 피리딜 그룹이며,It is a pyridyl group of the following general formula, R2는 일반식의 그룹 또는 R1과 동일한 의미를 가지며, R3및 R4는 각각 독립적으로 C1－C18알킬, C5－C6사이클로알킬, －OH 또는 －SH에 의해 치환된 C1－C18알킬, 또는 비치환된 페닐, 벤질 또는 페닐에틸, 또는 할로겐, C1－C12알킬, C1－C12알콕시, 시아노 또는 니트로에 의해 치환된 페닐, 벤질 또는 페닐에틸이거나, 결합 질소원자와 함께 피롤리디닐, 피페리딜, 피롤릴, 이미다졸릴, 피라졸릴, 트리아졸릴, 피페라지닐, 모르폴리닐 및 티오모르폴리닐로 이루어진 그룹중에서 선택되는 5－ 또는 6－원 헤테로사이클릭 라디칼을 형성하고, R5내지 R6은 각각 독립적으로 수소, 할로겐, C1－C12알킬, C1－C12알콕시, C1－C12알킬머캅토 또는 시아노이며, X1및 X2는 각각 독립적으로 산소 또는 황이다.R 2 is a general formula Has the same meaning as R 1 or R 1, and R 3 and R 4 are each independently C 1 -C 18 alkyl, C 5 -C 6 cycloalkyl, C 1 -C 18 alkyl substituted by —OH or —SH Or unsubstituted phenyl, benzyl or phenylethyl, or phenyl, benzyl or phenylethyl substituted by halogen, C 1 -C 12 alkyl, C 1 -C 12 alkoxy, cyano or nitro, or with a bound nitrogen atom 5- or 6-membered heterocyclic radicals selected from the group consisting of pyrrolidinyl, piperidyl, pyrrolyl, imidazolyl, pyrazolyl, triazolyl, piperazinyl, morpholinyl and thiomorpholinyl R 5 to R 6 are each independently hydrogen, halogen, C 1 -C 12 alkyl, C 1 -C 12 alkoxy, C 1 -C 12 alkylmercapto or cyano, and X 1 and X 2 are each Independently oxygen or sulfur. 제1항에 있어서, 일반식(Ⅰ)의 화합물의 그룹 R1및 R2와 X1및 X2가 각각 동일한 물질.The substance according to claim 1, wherein the groups R 1 and R 2 and X 1 and X 2 of the compound of general formula (I) are each the same. 제1항에 있어서, 일반식(Ⅰ)의 화합물의 그룹 R3및 R4, R5및 R6와 R7및 R8이 각각 동일한 물질.A substance according to claim 1, wherein groups R 3 and R 4 , R 5 and R 6 and R 7 and R 8 of the compound of general formula (I) are the same. 제1항에 있어서, R1이 피리딜 또는 일반식의 그룹이며, R2는 일반식의 그룹이거나 R1고 동일한 의미를 가지며, R3및 R4는 동일하며 C1－C12알킬, 2－하이드록시에틸, 2－머캅토에틸, 사이클로헥실, 벤질 또는 페닐에틸이거나, 결합 질소원자와 함께 피롤리디닐, 피페리딜, 모르폴리닐 또는 티오모르폴리닐을 형성하고, R5내지 R8은 각각 독립적으로 수소, 클로로, 브로모, C1－C4알킬, C1－C4알콕시 또는 C1－C4알킬머캅토인 물질.The compound of claim 1, wherein R 1 is pyridyl or a general formula R 2 is a general formula R 1 and R 4 have the same meaning, and R 3 and R 4 are the same and are C 1 -C 12 alkyl, 2-hydroxyethyl, 2-mercaptoethyl, cyclohexyl, benzyl or phenylethyl, or a bonded nitrogen atom Together with pyrrolidinyl, piperidyl, morpholinyl or thiomorpholinyl, R 5 to R 8 are each independently hydrogen, chloro, bromo, C 1 -C 4 alkyl, C 1 -C 4 Substances that are alkoxy or C 1 -C 4 alkylmercapto. 제1항에 있어서, R3및 R4는 동일하며 C1－C4알킬, 2－하이드록시에틸 또는 2－머캅토에틸이거나, 결합 질소 원자와 함께 피롤리디닐, 피페리딜, 모르폴리닐 또는 티오모르폴리닐을 형성하며, R5내지 R8은 각각 독립적으로 수소, 또는 브로모인 물질.The compound of claim 1, wherein R 3 and R 4 are the same and are C 1 -C 4 alkyl, 2-hydroxyethyl or 2-mercaptoethyl, or pyrrolidinyl, piperidyl, morpholinyl with a bonded nitrogen atom. Or thiomorpholinyl, wherein R 5 to R 8 are each independently hydrogen or bromo. 제1항에 있어서, R1및 R2는 2－, 3－ 바람직하게는 4－피리딜이며, X1및 X2는 산소이거나, R1및 R2가 일반식(여기서, R3및 R4는 각각 메틸이거나 결합 질소원자와 함게 피롤리디닐, 피페리딜 또는 모르폴리닐을 형성한다)의 그룹이며 X1및 C2는 동일하고 산소, 바람직하게는 황인 물질.A compound according to claim 1, wherein R 1 and R 2 are 2-, 3- preferably 4-pyridyl, X 1 and X 2 are oxygen, or R 1 and R 2 are of general formula Wherein R 3 and R 4 are each methyl or form a pyrrolidinyl, piperidyl or morpholinyl together with a bonding nitrogen atom and X 1 and C 2 are the same and are oxygen, preferably sulfur . 제1항에 있어서, 피롤로피롤층이 질산, 염산, 브롬화 수소산, 트리클로로아세트산 또는 트리플루오로아세트산과 적어도 부분적으로 염을 형성하는 물질.The material of claim 1, wherein the pyrrolopyrrole layer at least partially forms a salt with nitric acid, hydrochloric acid, hydrobromic acid, trichloroacetic acid or trifluoroacetic acid. 제1항에 있어서, 일반식(Ⅰ)의 화합물층의 두께가 500 내지 5000Å인 물질.The material according to claim 1, wherein the compound layer of formula (I) has a thickness of 500 to 5000 kPa. 제1항에 있어서, 기판이 종이, 유리, 세라믹 물질, 플라스틱, 적층물, 금속, 금속 합금 또는 금속 산화물을 포함하는 물질.The material of claim 1, wherein the substrate comprises paper, glass, ceramic material, plastic, laminate, metal, metal alloy, or metal oxide. 제1항에 있어서, 일반식(Ⅰ)의 화합물이 1,4－디케토－3,6－비스(4′－피리딜)피롤로[3,4－c]피롤, 1,4－디케토－3,6－비스(3′－피리딜)피롤로[3,4－c]피롤 및 1,4－디티오케토－3,6－비스(4′－디메틸아미노페틸)피롤로[3,4－c]피롤인 물질.The compound of formula (I) according to claim 1, wherein the compound of formula (I) is 1,4-diketo-3,6-bis (4'-pyridyl) pyrrolo [3,4-c] pyrrole, 1,4-diketo -3,6-bis (3'-pyridyl) pyrrolo [3,4-c] pyrrolo and 1,4-dithioketo-3,6-bis (4'-dimethylaminofetyl) pyrrolo [3, 4-c] pyrrole. 적어도 한 면을 일반식(Ⅰ)의 피롤로피롤으로 피복시킨 기판을 강산으로 처리하고 일반식(Ⅰ)의 피롤로피롤을 적어도 부분적으로는 강산의 염으로 전환시킴을 특징으로 하여, 제1항에서 정의된 피복물질을 제조하는 방법.A substrate coated with pyrrolopyrrole of formula (I) with at least one side is treated with a strong acid, and the pyrrolopyrrole of formula (I) is at least partially converted to a salt of a strong acid. Method for preparing the coating material as defined in 제11항에 있어서, 피복된 기판을 강산 증기에 노출시키는 방법.The method of claim 11, wherein the coated substrate is exposed to strong acid vapors. 정보 입력에 따라 기록층으로 작용하는 일반식(Ⅰ)의 화합물과 이의 강산이 염을 레이저 광으로 조사시키고 정보가 상기 층의 조사된 영역에서 기록되고 기억되도록 기록층의 흡수 스펙트럼을 변화시킴을 특징으로 하여, 제1항에서 정의된 피복물질내에 정보를 기억시키는 방법.The compound of formula (I) and its strong acid, which act as recording layers upon input of information, irradiate the salt with laser light and change the absorption spectrum of the recording layer so that the information is recorded and stored in the irradiated area of the layer. To store the information in the coating material defined in claim 1. 제13항에 있어서, 피복물질이 투명한 기판/기록층/반사층/불투명 또는 투명한 보호층을 포함하는 구조를 갖는 방법.The method of claim 13, wherein the coating material has a structure comprising a transparent substrate / recording layer / reflective layer / opaque or transparent protective layer. 제13항에 있어서, 피복물질이 투명한 기판/기록층/반사층/불투명 또는 투명한 보호층을 포함하는 구조를 갖는 방법.The method of claim 13, wherein the coating material has a structure comprising a transparent substrate / recording layer / reflective layer / opaque or transparent protective layer. 제13항에 있어서, 피복물질이 투명한 기판/기록층/반사층/불투명 또는 투명한 보호층을 포함하는 구조를 갖는 방법.The method of claim 13, wherein the coating material has a structure comprising a transparent substrate / recording layer / reflective layer / opaque or transparent protective layer. 제13항에 있어서, 레이저 광 조사에 의해 기억된 정보가 저에너지 레이저를 사용하는 광검출기에 의해 해독되는 방법.The method according to claim 13, wherein the information stored by laser light irradiation is decoded by a photodetector using a low energy laser. 기록층이 적어도 부분적으로는 강산의 염인 일반식(Ⅰ)의 화합물을 포함하며 기록층내 환경보다 더 높거나 더 낮은 흡수력을 갖는 비트 형태로 정보를 함유하는, 정보가 기록된 피복물질.An information-recorded coating material, wherein the recording layer comprises a compound of formula (I), which is at least partly a salt of a strong acid, and contains the information in the form of bits with higher or lower absorption than the environment in the recording layer. 제1항에 있어서, 기판이 유전성 물질인 대전방지 처리된 물질.The antistatic material of claim 1, wherein the substrate is a dielectric material. 기판이 전기전도성 물질을 포함하며 추가로 전하－수송층이 적어도 부분적으로는 강산의 염 형태인 일반식(Ⅰ)의 피롤로피롤층에 도포되는, 제1항에서 정의된 물질을 포함함을 특징으로 하는 광수용체.Wherein the substrate comprises an electrically conductive material and further comprising a material as defined in claim 1, wherein the charge-transporting layer is applied to the pyrrolopyrrole layer of general formula (I), at least partly in the form of a salt of a strong acid. Photoreceptors. 기판이 전기전도성 물질을 포함하며 추가로 전하－수송층이 적어도 부분적으로는 강산의 염 형태인 일반식(Ⅰ)의 피롤로피롤층에 도포되는, 제1항에서 정의된 물질을 포함함을 특징으로 하는 태양 셀 또는 태양 전지.Wherein the substrate comprises an electrically conductive material and further comprising a material as defined in claim 1, wherein the charge-transporting layer is applied to the pyrrolopyrrole layer of general formula (I), at least partly in the form of a salt of a strong acid. Solar cells or solar cells. 기판이 일반식(Ⅰ)의 피롤로피롤층을 피복시킨 1쌍의 전극으로 인해 피복된 물질인, 피복물질을 포함함을 특징으로 하는 센서.A sensor, characterized in that the substrate comprises a coating material, which is a coating material due to a pair of electrodes covering the pyrrolopyrrole layer of general formula (I). 제1항에서 정의한 물질의, 태양 전지와 태양 셀 제조용 및 광수용체 제조용 광학 기록물질로서의 용도.Use of a material as defined in claim 1 as an optical recording material for the manufacture of solar cells and solar cells and for the production of photoreceptors. 유전성 기판을 갖는 제1항에서 정의한 물질의, 대전방지 가공 처리된 물질로서의 용도.Use of a material as defined in claim 1 having a dielectric substrate as an antistatically processed material. 기판이 1쌍의 전극으로 피복되며 일반식(Ⅰ)의 피롤로피롤이 활성 층으로서 작용하는, 일반식(Ⅰ)의 피롤로피롤의 피복된 물질의 센서로서의 용도.Use of the coated material of pyrrolopyrrole of general formula (I) as a sensor, wherein the substrate is covered with a pair of electrodes and the pyrrolopyrrole of general formula (I) serves as the active layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
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