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KR920013658A - Precision Driving Device Using Piezoelectric Element - Google Patents

Precision Driving Device Using Piezoelectric Element Download PDF

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Publication number
KR920013658A
KR920013658A KR1019900021805A KR900021805A KR920013658A KR 920013658 A KR920013658 A KR 920013658A KR 1019900021805 A KR1019900021805 A KR 1019900021805A KR 900021805 A KR900021805 A KR 900021805A KR 920013658 A KR920013658 A KR 920013658A
Authority
KR
South Korea
Prior art keywords
drive
piezoelectric element
precision
drive mechanism
driving device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019900021805A
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Korean (ko)
Other versions
KR940002734B1 (en
Inventor
이종현
김윤태
김보우
Original Assignee
경상현
재단법인 한국전자통신연구소
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Publication date
Application filed by 경상현, 재단법인 한국전자통신연구소 filed Critical 경상현
Priority to KR1019900021805A priority Critical patent/KR940002734B1/en
Priority to JP3344848A priority patent/JP2539124B2/en
Publication of KR920013658A publication Critical patent/KR920013658A/en
Application granted granted Critical
Publication of KR940002734B1 publication Critical patent/KR940002734B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Machine Tool Units (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)

Abstract

내용 없음No content

Description

압전소자를 이용한 정밀구동장치Precision Driving Device Using Piezoelectric Element

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도 판 용수철의 구조 및 회전방향, 제4도 구동체 양단의 연결구조, 제5도 z, tilt구동기구의 평면도 및 측면도.3, the structure and rotation direction of the plate spring, the connection structure of the both ends of the drive body, Fig. 5, the top and side views of the tilt driving mechanism.

Claims (5)

구동체(1)를 수표으로 설치하고 그 구동체(1)의 구동방향을 반환시키는 변위확대기구(9)를 사용함으로써 구동장치의 높이증가가 억제되는 z, tilt구동기구(12)를 포함한것을 특징으로 하는 압전소자를 이용한 정밀구동장치.Including a z, tilt drive mechanism 12 in which the height increase of the drive device is suppressed by using the displacement expanding mechanism 9 which installs the drive body 1 as a check and returns the drive direction of the drive body 1 Precision drive device using a piezoelectric element characterized in. 한 회전요소에 대하여 그 회전방향으로는구동기구(13)의 안내요소로 이용하는 동시에 수직방향으로는 z, tilt구동기구(2)의 구동점으로 활용하는 구조를 갖는 것을 특징으로 하는 압전소자를 이용한 구조를 갖는 것을 특징으로 하는 압전소자를 이용한 정밀 구동장치.In the direction of rotation of a rotating element Piezoelectric element characterized in that it has a structure using a piezoelectric element, characterized in that it is used as a guide element of the drive mechanism 13, and has a structure that is used as a driving point of the z, tilt drive mechanism 2 in the vertical direction. Precision drive by using. 제2항에 있어서구동기구(3)와z, tilt구동기구(2)의 역할이 서로 바뀌어 작동되는 구조를 갖는 것을 특징으로 하는 압전소자를 이용한 정밀구동장치.The method of claim 2 Precision drive device using a piezoelectric element, characterized in that the drive mechanism (3) and the z, the tilt drive mechanism (2) has a structure in which the operation is switched to each other. 안내요소를 압착한 후 고정하는 방법으로 그 위치를 조절함으로써 구동체와 안내요소에 예압을 가하는 장치를 갖는 정밀구동장치.Precision driving device having a device for applying a preload to the drive element and the guide element by adjusting the position by pressing and fixing the guide element. 구동체(1)의 양단에 반쪽실린더(16)를 부착함으로써 원자방향으로는 회전이 용이하지만 변위확대의 두 수직방향으로는 강성이 강화되는 구조를 갖는 것을 특징으로 하는 압전소자를 이용한 정밀구동장치.By attaching the half cylinders 16 to both ends of the driving body 1, the precision driving device using the piezoelectric element is characterized in that the rotation is easy in the atomic direction but the rigidity is strengthened in the two vertical directions of the displacement expansion. . ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900021805A 1990-12-26 1990-12-26 Precise driving device of wafer using solid type actuator Expired - Fee Related KR940002734B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019900021805A KR940002734B1 (en) 1990-12-26 1990-12-26 Precise driving device of wafer using solid type actuator
JP3344848A JP2539124B2 (en) 1990-12-26 1991-12-26 Precision drive device for wafers using solid-state actuator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900021805A KR940002734B1 (en) 1990-12-26 1990-12-26 Precise driving device of wafer using solid type actuator

Publications (2)

Publication Number Publication Date
KR920013658A true KR920013658A (en) 1992-07-29
KR940002734B1 KR940002734B1 (en) 1994-03-31

Family

ID=19308466

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900021805A Expired - Fee Related KR940002734B1 (en) 1990-12-26 1990-12-26 Precise driving device of wafer using solid type actuator

Country Status (2)

Country Link
JP (1) JP2539124B2 (en)
KR (1) KR940002734B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103522294B (en) * 2012-07-05 2015-12-09 上海华虹宏力半导体制造有限公司 A kind of end effector being provided with the front manipulator of stop
KR101925045B1 (en) * 2012-12-05 2018-12-04 한미반도체 주식회사 Docking block unit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010949B2 (en) * 1972-07-07 1975-04-25
JPS4970072A (en) * 1972-11-07 1974-07-06
JP2623123B2 (en) * 1988-08-17 1997-06-25 キヤノン株式会社 Fine movement stage device

Also Published As

Publication number Publication date
JPH0620908A (en) 1994-01-28
JP2539124B2 (en) 1996-10-02
KR940002734B1 (en) 1994-03-31

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