[go: up one dir, main page]

KR920007134A - 유전 패키지 본체에 전기도선이 있는 ic패키지 - Google Patents

유전 패키지 본체에 전기도선이 있는 ic패키지 Download PDF

Info

Publication number
KR920007134A
KR920007134A KR1019910016891A KR910016891A KR920007134A KR 920007134 A KR920007134 A KR 920007134A KR 1019910016891 A KR1019910016891 A KR 1019910016891A KR 910016891 A KR910016891 A KR 910016891A KR 920007134 A KR920007134 A KR 920007134A
Authority
KR
South Korea
Prior art keywords
annular portion
conductor film
dielectric
dielectric annular
package
Prior art date
Application number
KR1019910016891A
Other languages
English (en)
Other versions
KR950010107B1 (ko
Inventor
마사야 다마무라
요시로 모니노
Original Assignee
세끼사와 요시
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세끼사와 요시, 후지쓰 가부시끼가이샤 filed Critical 세끼사와 요시
Publication of KR920007134A publication Critical patent/KR920007134A/ko
Application granted granted Critical
Publication of KR950010107B1 publication Critical patent/KR950010107B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32153—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/32175—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
    • H01L2224/32188—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic the layer connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microwave Amplifiers (AREA)
  • Waveguides (AREA)
  • Waveguide Connection Structure (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

내용 없음

Description

유전 패키지 본체에 전기도선이 있는 IC패키지
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 캡부분이 제거된 본 발명의 제1실시예에 따른 IC패키지의 투시도.
제2도는 제4도에서 선 II-II를 따라 취한 제1도의 IC패키지의 단면도.
제3도는 제4도에서 선 III-III를 따라 취한 제1도의 IC패키지의 단면도.

Claims (8)

  1. 반도체 칩 ; 반도체 칩을 싸기 위하여, 바닥부분, 바닥부분위에 배열되고 반도체 칩을 둘러싸는 제1유전 환상부분, 제1유전 환상부분위에 배열되는 제2유전 환성부분 및 제2유전 환상부분에 부착되는 캡부분으로 이루어지며, 상기 제1및 제2유전 환상부분은 상기 및 하부 표면, 내부 및 외부 가장자리와 내부 및 외부 가장자리 사이의 폭을 가지는 패키지 본체 ; 제2유전 환상부분의 폭보다 커서 제1유전 환상부분의 상부 표면의 제1부분이 제2유전 환상부분에 의해 덮혀지고 제1유전 환상부분의 상부 표면의 제2부분이 노출되도록 하는 제1유전 환상부분의 폭 ; 제1유전 환상부분의 내부 및 외부 가장자리 사이를 실제로 연장시키기 위해 제1유전 환상부분의 상부 표면상에 형성되는 전기도선 ; 제1유전 환상부분의 제1덮혀진 부분에 대응하여 제2도체막, 전기도선의 제1부분 및 제1도체막에 의해 스트립선을 형성하고, 제1유전 환상부분의 제2노출된 부분에 대응하여 전기도선의 제2부분 및 제1도체막에 의해 마이크로 스트립선을 형성하도록, 제1유전 환상부분의 하부 표면상에 접지 및 형성되어지는 제1도체막과, 제2유전 환상부분의 상기 표면상에 접지 및 형성되어지는 제2도체막 ; 및 최소한 제1유전 환상부분의 제2노출된 부분의 일부에 대응하여 제1유전 환상부분에 제공되고, 제1도체막보다 도선에 인접하고, 제1유전 혼상부분의 제2노광된 부분에 대응하여 전기도선의 제2부분으로 구성되는 접지되어지는 제3도체막으로 이루어진 IC패키지.
  2. 제1항에 있어서, 제1유전 환상부분이 서로 겹쳐지는 표면을 갖는 세분된 부분들로 이루어지고, 제3도체막이 겹쳐진 표면중의 하나에 형성되는 IC패키지.
  3. 제1항에 있어서, 제1유전 환상부분의 제1덮혀진 부분의 그의 내부와 외부 가장자리 사이에 위치하며, 제2노출된 부분은 제1덮혀진 부분의 안쪽위에 안부분과 제1덮혀진 부분의 바깥쪽에 위에 바깥부분으로 이루어지는 IC패키지.
  4. 제3항에 있어서, 제3도체막이 제1유전 환상부분의 제2노광된 부분의 안부분과 바깥부분에 대응하여 제공되는 IC패키지.
  5. 제3항에 있어서, 제3도체막이 제1유전 환상부분의 제2노광된 부분의 안부분과 바깥부분중의 하나에 대응하여 제공되는 IC패키지.
  6. 제1항에 있어서, 전기도선의 신호전송선과 최소한 하나의 전원선을 포함하고, 접지되어지는 제4좁은 도체막이 최소한 한 전원선에 대응하여 제1유전 환상부분에 제공되고 제3도체막에 연결되는 IC패키지.
  7. 제6항에 있어서, 접지되어지는 제5좁은 도체막이 최소한 한 전원선에다가 제4좁은 도체막에 대응하여 제2유전 환상부분에 제공되는 IC패키지.
  8. 제1항에 있어서, 제1유전 환상부분이 제2유전 환상부분의 두께와 같은 두께를 갖으므로 제1도체막 및 제2도체막이 전기도선으로 부터 같은 거리에 있게 되는 IC패키지.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910016891A 1990-09-28 1991-09-27 유전 패키지 본체에 전기도선이 있는 ic 패키지 KR950010107B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-259364 1990-09-28
JP2259364A JPH0766949B2 (ja) 1990-09-28 1990-09-28 Ｉｃパッケージ

Publications (2)

Publication Number Publication Date
KR920007134A true KR920007134A (ko) 1992-04-28
KR950010107B1 KR950010107B1 (ko) 1995-09-07

Family

ID=17333091

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910016891A KR950010107B1 (ko) 1990-09-28 1991-09-27 유전 패키지 본체에 전기도선이 있는 ic 패키지

Country Status (5)

Country Link
US (1) US5218230A (ko)
EP (1) EP0478160B1 (ko)
JP (1) JPH0766949B2 (ko)
KR (1) KR950010107B1 (ko)
DE (1) DE69123323T2 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0515508U (ja) * 1991-07-31 1993-02-26 三菱電機株式会社 マイクロ波用パツケージ
US5184095A (en) * 1991-07-31 1993-02-02 Hughes Aircraft Company Constant impedance transition between transmission structures of different dimensions
JPH05190721A (ja) * 1992-01-08 1993-07-30 Fujitsu Ltd 半導体装置及びその製造方法
US5376909A (en) * 1992-05-29 1994-12-27 Texas Instruments Incorporated Device packaging
US5455385A (en) * 1993-06-28 1995-10-03 Harris Corporation Multilayer LTCC tub architecture for hermetically sealing semiconductor die, external electrical access for which is provided by way of sidewall recesses
GB2288286A (en) * 1994-03-30 1995-10-11 Plessey Semiconductors Ltd Ball grid array arrangement
JPH07288409A (ja) * 1994-04-20 1995-10-31 Nec Corp マイクロ波集積回路装置
US5672911A (en) * 1996-05-30 1997-09-30 Lsi Logic Corporation Apparatus to decouple core circuits power supply from input-output circuits power supply in a semiconductor device package
US5691568A (en) * 1996-05-31 1997-11-25 Lsi Logic Corporation Wire bondable package design with maxium electrical performance and minimum number of layers
AU4902897A (en) 1996-11-08 1998-05-29 W.L. Gore & Associates, Inc. Method for improving reliability of thin circuit substrates by increasing the T of the substrate
US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US7321485B2 (en) 1997-04-08 2008-01-22 X2Y Attenuators, Llc Arrangement for energy conditioning
KR100218368B1 (ko) * 1997-04-18 1999-09-01 구본준 리드프레임과 그를 이용한 반도체 패키지 및 그의 제조방법
SE514425C2 (sv) * 1999-06-17 2001-02-19 Ericsson Telefon Ab L M Övergång mellan stripline och mikrostrip i kavitet i flerlagers mönsterkort
TW588532B (en) * 2002-03-29 2004-05-21 Realtek Semiconductor Corp Management device and method of NAT/NAPT session
US20040041254A1 (en) * 2002-09-04 2004-03-04 Lewis Long Packaged microchip
JP3938742B2 (ja) * 2002-11-18 2007-06-27 Ｎｅｃエレクトロニクス株式会社 電子部品装置及びその製造方法
KR100506738B1 (ko) * 2003-11-03 2005-08-08 삼성전기주식회사 리크를 방지할 수 있는 세라믹 패키지 밀봉 구조, 리크를방지할 수 있는 세라믹 패키지 및 상기 세라믹 패키지의제조 방법
JP2008535207A (ja) 2005-03-01 2008-08-28 エックストゥーワイ アテニュエイターズ，エルエルシー 共平面導体を有する調整器
JP5588419B2 (ja) * 2011-10-26 2014-09-10 株式会社東芝 パッケージ
JP7005111B2 (ja) * 2018-02-09 2022-01-21 矢崎総業株式会社 電子部品実装品

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812887B2 (ja) * 1985-04-13 1996-02-07 富士通株式会社 高速集積回路パツケ−ジ
CA1320006C (en) * 1986-06-02 1993-07-06 Norio Hidaka Package for integrated circuit
JPH0793392B2 (ja) * 1986-10-25 1995-10-09 新光電気工業株式会社 超高周波素子用パツケ−ジ
US4922324A (en) * 1987-01-20 1990-05-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device
JPS63216366A (ja) * 1987-03-05 1988-09-08 Fujitsu Ltd 集積回路用パツケ−ジ
JP2580674B2 (ja) * 1988-02-08 1997-02-12 三菱電機株式会社 高周波用モールド型パッケージ
JPH081918B2 (ja) * 1989-04-28 1996-01-10 日本電気株式会社 超高周波帯実装構造

Also Published As

Publication number Publication date
EP0478160A2 (en) 1992-04-01
US5218230A (en) 1993-06-08
JPH0766949B2 (ja) 1995-07-19
EP0478160B1 (en) 1996-11-27
EP0478160A3 (en) 1993-03-31
JPH04137655A (ja) 1992-05-12
DE69123323T2 (de) 1997-04-03
KR950010107B1 (ko) 1995-09-07
DE69123323D1 (de) 1997-01-09

Similar Documents

Publication Publication Date Title
KR920007134A (ko) 유전 패키지 본체에 전기도선이 있는 ic패키지
KR880003419A (ko) 반도체 장치
KR920015496A (ko) 반도체장치
KR960012396A (ko) 필름 캐리어 반도체 장치
KR880011910A (ko) 수지봉합형 집적회로장치
JPS6437032A (en) Bendable lead frame assembly of integrated circuit and integrated circuit package
KR840005921A (ko) 전자 장치
KR910015078A (ko) 고주파회로용 패키지
KR970003877A (ko) 테이프 캐리어 패키지
SE7711731L (sv) Vermeavledande plastholje for en integrerad krets
GB1238569A (ko)
KR890001182A (ko) 외부 테이프 자동 접합(tab) 반도체 패키지
KR940020539A (ko) 저 인덕턴스 반도체 패키지(Low inductance semiconductor package)
KR910008824A (ko) 반도체소자패키지 및 반도체소자패키지 탑재배선회로기판
KR920022431A (ko) 반도체 장치용 패키지
KR940012590A (ko) 메탈코어타입 다층리드프레임
KR970067916A (ko) 접합누설이 적은 저 스트레스 광다이오드
KR880001050A (ko) Ic용 패키지
KR870003563A (ko) 반도체장치
KR890007404A (ko) 다층 배선 집적 반도체 회로
KR850006299A (ko) 배선기판
KR900004040A (ko) 반도체 집적회로 디바이스
KR920010938A (ko) 고체 촬상 장치
KR900001025A (ko) 반도체장치
DE59003026D1 (de) Elektrisch isolierender Schaltungsträger mit integrierten Kühlmitteln.

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19910927

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19910927

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19950124

Patent event code: PE09021S01D

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

Comment text: Decision on Publication of Application

Patent event code: PG16051S01I

Patent event date: 19950809

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19951130

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19951207

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19951207

End annual number: 3

Start annual number: 1

PR1001 Payment of annual fee

Payment date: 19980901

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 19990903

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20000831

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20010829

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20020822

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20030825

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20040823

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20050824

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20060824

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20070823

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20070823

Start annual number: 13

End annual number: 13

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee