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KR920004341A - 술폰아미드 유도체 - Google Patents

술폰아미드 유도체 Download PDF

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KR920004341A
KR920004341A KR1019910014156A KR910014156A KR920004341A KR 920004341 A KR920004341 A KR 920004341A KR 1019910014156 A KR1019910014156 A KR 1019910014156A KR 910014156 A KR910014156 A KR 910014156A KR 920004341 A KR920004341 A KR 920004341A
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group
formula
lower alkyl
same
hydrogen atom
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KR950001686B1 (ko
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히로시 요시노
노리히로 우에다
히로유끼 스구미
준 니이지마
요시히꼬 고따께
도시미 오까다
노조무 고야나기
다쓰오 와다나베
마꼬또 아사다
겐따로오 요시마쓰
아쓰미 이이지마
다께시 나가쓰
가뻬이 쓰가하라
교오스께 기또오
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나이또오 하루오
에자이 가부시끼가이샤
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Abstract

내용 없음

Description

술폰아미드 유도체
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (11)

  1. 일반식(Ⅰ)의 술폰아미드유도체 또는 약리학적으로 허용되는 그의염.
    상기식에서, R1은 수소원자, 할로겐원자, 저급알킬기, 저급알콕시기, 히드록실기, 니트로기, 페녹시기, 시아노기, 아세틸기 또는 보호될수 있는 아미노기를 나타내며, R2및R3는 같거나 또는 서로 상이한데 각각 수소원자, 할로겐원자, 저급알킬기, 또는 저급알콕시기를 나타내며, R4및R7은같거나 또는 서로 이상한데 각각 수소원자 또는 저급알킬기를 나타내며 R5및R6는 같거나 또는 서로 상이한데 각각 수소원자, 할로겐원자, 저급알콕시기 또는 치환되어도 좋은 아미노기를 나타내며, A는 식 =N- 또는 =CH-의 기를 나타내며, B는 식 =N- 또는의 기를 나타내며, 여기서 R10은 수소원자 또는 저급알킬기를 나타내며, E는 식의 기를 나타내며, 여기서 Q는 산소원자 또는 황원자를 나타내며, R11은 수소원자, 저급알킬기, 저급라킬기로 치환되어도 좋은 아미노기, 저급알콕시, 2-티에닐기, 2-푸릴기 또는:
    의 기(D는 식 =N- 또는 CH-의 기를 나타내며, R12R13는 같거나 또는 서로 상이한데 각각 수소원자, 할로겐원자, 니트로기, 보호될수 있는 히드록실기 또는 저급알킬기로 나타낸다), 또는 같거나 또는 서로 상이한 1 내지 3개의 치환체 G로 치환되어도 좋으며 환기가 고리중에 1 또는 2질소원자를 가질수도 있는 방향족 6원환기이며 (G는 할로겐원자, 저급알킬기, 저급알콕시기, 보호될수도 있는 히드록실기, 에스테르화 되거나 아미드화될수도 있는 카로복실기, 저급알킬티오기 또는 페녹시기이다), 단 다음의 조합들은 제외된다.
    (1)수소, 원자저급알킬기, 니트로기 또는 보호될수도 있는 아미노기인 R1, 각각 수소원자인 R2와R3, 각각 =CH-인 A와 B 그리고 같거나 또는 서로 다른 1 내지 3치환체 G로 치환되어도 좋은 페닐기인 E의 조합, 그리고 (2)같거나 또는 서로 다르고 각각 수소원자, 저급알킬기, 니트로기 또는 할로겐 원자인 R1, R2 및 R3, 각각 =CH-인 A와 B, 그리고의 기(여기서 R11은 저급알킬기, 저급알킬기로 치환되어도 좋은 아미노기 또는 식:
    의 기(R12와 R13은 상기한 바와 같다)인 E의 조합.
  2. 제1항에 있어서, R1이 저급알콕시기를 나타내는 것을 특징으로 하는 술폰아미드 유도체 또는 약리학적으로 허용되는 그의염.
  3. 제1항에 있어서, A는 식: =CH-의 기를 나타내며, B는 식:=N-의 기를 나타내는 것을 특징으로 하는 술폰아미드 유도체 또는 약리학적으로 허용되는 그의염.
  4. 제1항 내지 제3항중 어느 하나에 있어서, E는 1 내지 3개의 같거나 또는 다른 치환체 G(G는 제1항에 정의된 것과 같다)로 치환될수 있는 페닐기, 피리딜기, 또는 피리미딜기를 나타내는 것을 특징으로 하는 술폰아미드 유도체 또는 약리학적으로 허용되는 그의염.
  5. 제1항 내지 제3항중 어느 하나에 있어서, E는 보호될수도 있는 히드록실기로 치환된 페닐기를 나타내는 것을 특징으로 하는 술폰아미드 유도체 또는 약리학적으로 허용되는 그의염.
  6. 제1항 내지 제3항중 어느 하나에 있어서, A와B는 각각 식: =CH-의 기를 나타내며, E는 다음식:
    (상기식에서, D,R12및 R13은 각각 상의 정의한 바와 같다)의 기를 나타내는 것을 특징으로 하는 술폰아미드 유도체 또는 약리학적으로 허용되는 그의염.
  7. 제1항 또는 제2항에 있어서, A는 식:=CH-의 기를 나타내며, B는 식:의 기를 나타내며, E는 식(여기서 R11은 제1항에서 정의한 바와같다)의 기를 나타내는 것을 특징으로 하는 술폰아미드 유도체 또는 약리학적으로 허용되는 그의염.
  8. 다음 방법들(a) 내지 (d)중 어느 하나에 의해 제1항에 따르는 술폰아미드 유도체 또는 약리학적으로 허용되는 그의염을 제조하는 방법.
    (a)일반식(Ⅱ)
    (상기식에서 R1a은 수소원자, 할로겐원자, 저급알킬기, 저급알콜시기, 보호된 허드록실기, 니트로기, 페녹시기, 시아노기, 아세틸기, 또는 보호된 아미노기를 나타내며, R2및 R3는 제1항에서 정의한 것과같다)의 술폰산 또는 그의 반응성 유도체를 일반식(Ⅲ)
    (상기식에서 R4, R7, A,B 및 E는 제1항에서 정의한 것과 같으며, R5a 및 R6a는 같거나 또는 서로 다르며 각각 수소원자, 할로겐원자, 저급알킬기, 저급알콜시기 또는 보호되거나 치환된 아미노기이다)의 화합물과 반응시키고, 결과된 화합물이 보호기를 가질때는 원한다면 이 보호기를 제거하는 방법.
    (b)일반식(Ⅳ)
    (상기식에서 R1a, R2,R3,R4,R5,R6a,R7,A 및 B는 각각 상기 정의한 것과 같으며, Ea는 같거나 서로 다른 1 내지 3개의 치환체 Ga로 치환된 방향족 6원환기(고리내에 1 또는 2질소원자를 함유할수도 있다)를 나타내며, Ga는 할로겐원자, 저급알킬기, 저급알콕시기, 히드록실기, 에스테르화 또는 아미드화될수도 있는 카르복실기, 저급알킬티오기, 또는 페녹시기이며, 단, 고리 상에 적어도 하나의 Ga는 히드록실기이다.)의 화합물 일반식(Ⅴ)
    X-Y (Ⅴ)
    (상기식에서 X는 히드록실기의 산소원자와 결합할수 있는 기를 나타내며 Y는 제거가능기를 나타낸다)의 화합물과 반응시키거나 또는 히드록실기와 반응성이 있는 무기산 또는 유기산 무수물과 반응시키고 결과된 화합물이 보호기를 가질때는 원한다면 이보호기를 제거하는 방법.
    (c)일반식(Ⅵ)
    (상기식에서 R1a, R2,R3,R4,R5a,R6a,R7a,A,B 및 E는 각각 상기 정의한 것과 같다)의 화합물을 알킬화제와 반응시키고 결과된 화합물이 보호기를 가질때는 원한다면 이 보호기를 제거하는 방법.
    (d)일반식(Ⅶ)
    (상기식에서 R1a, R2,R3,R4,R5a,R6a,R7a,A 및 B는 각각 상기 정의한 것과 같다)의 화합물을 일반식(Ⅷ)
    R11-Z (Ⅷ)
    (상기식에서 R11은 상기한 바와같으며, Z는 카트복실기 또는 그의 반응성 유도체를 나타낸다)의 화합물과 반응시키거나 또는 R11이 저급알킬아미노기일때는 저급알킬 이소시아네이트와 반응시키는 방법.
  9. 제1항에 다르는 술폰아미드유도체 또는 약리학적으로 허용되는 그의염을 유효성분으로 하여 이루어지는 항신생물 약제.
  10. 제1항에 있어서, 화합물이 다음 술폰아미드유도체중에서 선택되는 것을 특징으로 하는 술폰아미드 유도체 또는 약리학적으로 허용되는 그의염.
    1)N-(2-아닐리노-3-피리딜)-p-톨루엔술폰아미드, 2)N-(2-아닐리노-3-피리딜)-4-에틸벤젠술폰아미드, 3)N-(2-아닐리노-3-피리딜)-4-메톡시벤젠술폰아미드, 4)4-메톡시-N-[2-[(4-메톡시페닐)아미노]-3-피리딜]-벤젠술폰아미드, 5)N-[2-(4-히드록시페닐)아미노]-3-피리딜]메톡시벤젠술폰아미드, 6)4-메톡시-N-[2-[(4-피리딜)아미노]-3-피리딜]-벤젠술폰아미드, 7)인산이수소 4-[[3-(4-메톡시벤젠술폰아미노)-2-피리딜]아미노]페닐, 8)N-(2-아닐리노페닐)-4-메톡시젠술폰아미드, 9)N-[(2(4-메톡시벤젠술폰아미노)페닐]-2-메틸니코틴아미드, 10)N-[(2(4-메톡시벤젠술폰아미노)페닐]-3-메틸이소니코틴아미노.
  11. 약리학적 유효량의 제1항에 정의한 유도체와 약리학적으로 허용되는 담체로 이루어지는 약리학적 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
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KR100839512B1 (ko) * 2004-07-02 2008-06-19 주식회사 코오롱 설파제를 디아조화체로 하는 산성 항균 염료 및 그를이용한 항균 섬유
KR100821898B1 (ko) * 2005-02-23 2008-04-16 주식회사 코오롱 은 함유 항균 산성 염료와 그의 제조 방법 및 그를 이용한항균 섬유
KR100821900B1 (ko) * 2005-09-15 2008-04-16 주식회사 코오롱 항균 산성 염료와 그의 제조 방법 및 그를 이용한 항균섬유

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EP0472053A2 (en) 1992-02-26
CN1036650C (zh) 1997-12-10
EP0472053A3 (en) 1994-08-10
US5610320A (en) 1997-03-11
CN1136036A (zh) 1996-11-20
RU2059615C1 (ru) 1996-05-10
NZ239425A (en) 1993-10-26
US5610304A (en) 1997-03-11
EP0472053B1 (en) 1998-06-17
US5250549A (en) 1993-10-05
DE69129611D1 (de) 1998-07-23
CN1059519A (zh) 1992-03-18
NO178695B (no) 1996-02-05
DE69129611T2 (de) 1998-12-17
NO913207D0 (no) 1991-08-16
US5292758A (en) 1994-03-08
HUT59663A (en) 1992-06-29
AU8249391A (en) 1992-02-27
HU912676D0 (en) 1992-01-28
US5434172A (en) 1995-07-18
CA2049496A1 (en) 1992-02-21
AU636239B2 (en) 1993-04-22
IE912936A1 (en) 1992-02-26
NO178695C (no) 1996-05-15
ATE167473T1 (de) 1998-07-15
KR950001686B1 (ko) 1995-02-28
NO913207L (no) 1992-02-21
US5332751A (en) 1994-07-26
CA2049496C (en) 1997-02-04
TW206208B (ko) 1993-05-21
FI913815A (fi) 1992-02-21
FI913815A0 (fi) 1991-08-12

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