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KR920001739A - Photodiode Structure of CCD Imaging Device - Google Patents

Photodiode Structure of CCD Imaging Device Download PDF

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Publication number
KR920001739A
KR920001739A KR1019900008481A KR900008481A KR920001739A KR 920001739 A KR920001739 A KR 920001739A KR 1019900008481 A KR1019900008481 A KR 1019900008481A KR 900008481 A KR900008481 A KR 900008481A KR 920001739 A KR920001739 A KR 920001739A
Authority
KR
South Korea
Prior art keywords
photodiode
imaging device
ccd imaging
photodiode structure
ccd image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019900008481A
Other languages
Korean (ko)
Inventor
이성민
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900008481A priority Critical patent/KR920001739A/en
Publication of KR920001739A publication Critical patent/KR920001739A/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/452—Input structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음No content

Description

CCD 영상소자의 포토다이오드 구조Photodiode Structure of CCD Imaging Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명 CCD영상소자의 개략도.1 is a schematic diagram of a CCD image device of the present invention.

제2도는 본 발명의다른 실시 예시도.2 is another exemplary embodiment of the present invention.

Claims (2)

포토다이오드와 VCCD 그리고 HCCD와 증폭단으로 이루어진 것에 있어서, 상기 포토다이오드를 육각형으로 구성하여 이 포토다이오드위에 원형 마이크로 렌즈를 부착시킬 수 있게함을 특징으로하는 CCD영상소자의 포토다이오드 구조.A photodiode structure of a CCD image element, comprising a photodiode, a VCCD, an HCCD, and an amplifying stage, wherein the photodiode is configured in a hexagonal shape so that a circular microlens can be attached onto the photodiode. 제1항에 있어서, 포토다이오드를 팔각형으로 구성함을 특징으로하는 CCD영상소자의 포토다이드 구조.The photodide structure of a CCD image device according to claim 1, wherein the photodiode is configured in an octagon. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900008481A 1990-06-09 1990-06-09 Photodiode Structure of CCD Imaging Device Ceased KR920001739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900008481A KR920001739A (en) 1990-06-09 1990-06-09 Photodiode Structure of CCD Imaging Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900008481A KR920001739A (en) 1990-06-09 1990-06-09 Photodiode Structure of CCD Imaging Device

Publications (1)

Publication Number Publication Date
KR920001739A true KR920001739A (en) 1992-01-30

Family

ID=67482581

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900008481A Ceased KR920001739A (en) 1990-06-09 1990-06-09 Photodiode Structure of CCD Imaging Device

Country Status (1)

Country Link
KR (1) KR920001739A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100410672B1 (en) * 2001-06-28 2003-12-12 주식회사 하이닉스반도체 The method of fabricating microlense in CMOS image sensor
KR100444496B1 (en) * 2001-12-31 2004-08-16 주식회사 하이닉스반도체 Unit pixel layout in CMOS image sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100410672B1 (en) * 2001-06-28 2003-12-12 주식회사 하이닉스반도체 The method of fabricating microlense in CMOS image sensor
KR100444496B1 (en) * 2001-12-31 2004-08-16 주식회사 하이닉스반도체 Unit pixel layout in CMOS image sensor

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19900609

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Patent event code: PA02012R01D

Patent event date: 19900609

Comment text: Request for Examination of Application

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Patent event date: 19920930

Patent event code: PE09021S01D

E601 Decision to refuse application
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Patent event date: 19930227

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 19920930

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I