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KR910015002A - 배기 시스템을 가지는 열처리 장치 - Google Patents

배기 시스템을 가지는 열처리 장치 Download PDF

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Publication number
KR910015002A
KR910015002A KR1019910001136A KR910001136A KR910015002A KR 910015002 A KR910015002 A KR 910015002A KR 1019910001136 A KR1019910001136 A KR 1019910001136A KR 910001136 A KR910001136 A KR 910001136A KR 910015002 A KR910015002 A KR 910015002A
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KR
South Korea
Prior art keywords
heat treatment
exhaust
treatment apparatus
exhaust passage
outside air
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Application number
KR1019910001136A
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English (en)
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KR0147044B1 (ko
Inventor
쥰이치 가키자키
Original Assignee
카자마 젠쥬
도오교오 에레구토론 사가미 가부시끼가이샤
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Priority claimed from JP2013295A external-priority patent/JP2866691B2/ja
Priority claimed from JP2025672A external-priority patent/JP2668023B2/ja
Priority claimed from JP17718490A external-priority patent/JP2868853B2/ja
Application filed by 카자마 젠쥬, 도오교오 에레구토론 사가미 가부시끼가이샤 filed Critical 카자마 젠쥬
Publication of KR910015002A publication Critical patent/KR910015002A/ko
Application granted granted Critical
Publication of KR0147044B1 publication Critical patent/KR0147044B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D17/00—Arrangements for using waste heat; Arrangements for using, or disposing of, waste gases
    • F27D17/30—Arrangements for extraction or collection of waste gases; Hoods therefor
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D17/00—Arrangements for using waste heat; Arrangements for using, or disposing of, waste gases
    • F27D17/30—Arrangements for extraction or collection of waste gases; Hoods therefor
    • F27D17/302—Constructional details of ancillary components, e.g. waste gas conduits or seals
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0028—Regulation
    • F27D2019/0031—Regulation through control of the flow of the exhaust gases

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

배기 시스템을 가지는 열처리 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는, 본 발명의 실시예에 관한 배기 시스템을 가지는 종형 열처리장치를 나타내는 전체 개요도.

Claims (12)

  1. 청정한 분위기로 유지된 룸내에 설치된 열처리장치로서, 룸내를 청정 분위기로 유지하기 위하여 정상적으로 룸내를 배치하는 집합 배기수단과, 가열 분위기하에서 피처리체의 표면에 소망하는 막을 형성하기 위한 가스 또는 액이 공급되는 처리용기 수단과, 상기 집합배기수단 및 상기 처리용기수단에 연이어 통하고, 상기 처리용기수단의 내부에 충만되는 가스를 상기 집합배기수단으로 유도하는 배기통로와, 상기 배기통로내의 배기압력을 조정하기 위하여, 상기 배기통로 내에 외기를 집어 넣는 외기도입 수단과, 상기 배기통로의 아래쪽에 설치되어, 상기 배기통로내에 고인 폐액을 트랩하는 트랩수단을 가지는 열처리장치.
  2. 제1항에 있어서, 트랩수단의 하류측 통로를 배기하기 위한 별도의 배기 수단을 더욱 가지는 열처리장치.
  3. 제2항에 있어서, 별도의 배기수단의 배기적은 상기 집합배기수단의 배기력 보다 약한 열처리장치.
  4. 제1항에 있어서, 외기 도입 수단은, 상기 배기통로의 수직부에 설치되어 있는 열처리장치.
  5. 제1항에 있어서, 외기 도입 수단은 상기 배기통로의 수평부에 설치되어 있는 열처리장치.
  6. 제1항에 있어서, 외기 도입 수단은, 상기 배기통로 내부의 압력과 대기압과의 차압에 의하여 부상하여 배기통로에 외기를 도입하는 플로트를 가지는 열처리 장치.
  7. 제1항에 있어서, 처리용기 수단으로 부터의 배기통로를 형성하는 수평배관의 적어도 일부가 하향으로 완만하게 경사되어 있는 열처리장치.
  8. 제1항에 있어서, 트랩수단은, 상기 배기통로의 수직부에 설치되어 있는 열처리장치.
  9. 제1항에 있어서, 배기통로를 형성하는 배관이, 불화에틸렌 수지로 만들어져 있는 열처리장치.
  10. 제6항에 있어서, 외기 도입수단의 통로 및 플로트가 불화에틸렌 수지로 만들어져 있는 열처리장치.
  11. 제1항에 있어서, 배기통로를 형성하는 배관이, 불화 에틸렌수지로 만들어져 있는 열처리장치.
  12. 제1항에 있어서, 처리용기 수단이 종형 열처리로를 가지는 열처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910001136A 1990-01-23 1991-01-23 배기 시스템을 가지는 열처리장치 Expired - Lifetime KR0147044B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2-13295 1990-01-23
JP2013295A JP2866691B2 (ja) 1990-01-23 1990-01-23 処理装置及び熱処理装置
JP13295 1990-01-23
JP25672 1990-02-05
JP2025672A JP2668023B2 (ja) 1990-02-05 1990-02-05 熱処理装置
JP177184 1990-07-04
JP17718490A JP2868853B2 (ja) 1990-07-04 1990-07-04 熱処理装置

Publications (2)

Publication Number Publication Date
KR910015002A true KR910015002A (ko) 1991-08-31
KR0147044B1 KR0147044B1 (ko) 1998-11-02

Family

ID=27280193

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910001136A Expired - Lifetime KR0147044B1 (ko) 1990-01-23 1991-01-23 배기 시스템을 가지는 열처리장치

Country Status (2)

Country Link
US (1) US5088922A (ko)
KR (1) KR0147044B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140071136A (ko) * 2012-12-03 2014-06-11 엘지디스플레이 주식회사 기판 열처리 장치

Families Citing this family (18)

* Cited by examiner, † Cited by third party
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JPH05217929A (ja) * 1992-01-31 1993-08-27 Tokyo Electron Tohoku Kk 酸化拡散処理装置
JPH065531A (ja) * 1992-06-22 1994-01-14 Tokyo Electron Tohoku Ltd 熱処理装置の配管連結装置
TW239164B (ko) * 1992-08-12 1995-01-21 Tokyo Electron Co Ltd
US5407349A (en) * 1993-01-22 1995-04-18 International Business Machines Corporation Exhaust system for high temperature furnace
US5782942A (en) * 1996-01-11 1998-07-21 Vanguard International Semiconductor Corporation Filter system for semiconductor furnace
US5851293A (en) * 1996-03-29 1998-12-22 Atmi Ecosys Corporation Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations
JP2001517363A (ja) * 1997-03-07 2001-10-02 セミトゥール・インコーポレイテッド サブアッセンブリを加熱する半導体処理炉
US5908292A (en) * 1997-03-07 1999-06-01 Semitool, Inc. Semiconductor processing furnace outflow cooling system
JP3270730B2 (ja) * 1997-03-21 2002-04-02 株式会社日立国際電気 基板処理装置及び基板処理方法
US6054014A (en) * 1997-05-21 2000-04-25 Vanguard International Semiconductor Corporation Exhaust apparatus
JP3554847B2 (ja) * 2001-07-30 2004-08-18 東京エレクトロン株式会社 熱処理装置
KR100626386B1 (ko) * 2004-09-20 2006-09-20 삼성전자주식회사 반도체 기판 제조에 사용되는 기판 처리 장치 및 기판처리 방법
JP4796352B2 (ja) * 2005-08-03 2011-10-19 パナソニック株式会社 熱処理装置
JP4502921B2 (ja) * 2005-10-04 2010-07-14 東京エレクトロン株式会社 基板処理における排気装置
JP4961381B2 (ja) * 2008-04-14 2012-06-27 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5504793B2 (ja) * 2009-09-26 2014-05-28 東京エレクトロン株式会社 熱処理装置及び冷却方法
US9513003B2 (en) * 2010-08-16 2016-12-06 Purpose Company Limited Combustion apparatus, method for combustion control, board, combustion control system and water heater
KR101364200B1 (ko) * 2011-03-21 2014-02-21 주식회사 테라세미콘 열풍 배출 덕트를 구비한 열처리 장치 및 이를 이용한 크린룸

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JPS58124226A (ja) * 1982-01-21 1983-07-23 Toshiba Corp 半導体熱処理装置
JPS61160933A (ja) * 1985-01-08 1986-07-21 Nec Corp 現像処理装置
JPS6263421A (ja) * 1985-09-13 1987-03-20 Toshiba Corp 半導体ウエ−ハ熱処理装置
US4789332A (en) * 1986-06-26 1988-12-06 Aluminum Company Of America Apparatus for removing volatiles from metal
JPS63238281A (ja) * 1987-03-27 1988-10-04 Hitachi Ltd ウエ−ハ処理装置及びそれに使用する微圧測定器
JP2596748B2 (ja) * 1987-06-04 1997-04-02 東芝セラミックス株式会社 半導体用熱処理炉
DE8801785U1 (de) * 1988-02-11 1988-11-10 Söhlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried Vorrichtung zur Temperaturbehandlung von Halbleitermaterialien
JP2913040B2 (ja) * 1988-08-26 1999-06-28 東京エレクトロン株式会社 トラップ装置
US4992044A (en) * 1989-06-28 1991-02-12 Digital Equipment Corporation Reactant exhaust system for a thermal processing furnace

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140071136A (ko) * 2012-12-03 2014-06-11 엘지디스플레이 주식회사 기판 열처리 장치

Also Published As

Publication number Publication date
KR0147044B1 (ko) 1998-11-02
US5088922A (en) 1992-02-18

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