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KR910005386A - Semiconductor deposition equipment - Google Patents

Semiconductor deposition equipment Download PDF

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Publication number
KR910005386A
KR910005386A KR1019890011389A KR890011389A KR910005386A KR 910005386 A KR910005386 A KR 910005386A KR 1019890011389 A KR1019890011389 A KR 1019890011389A KR 890011389 A KR890011389 A KR 890011389A KR 910005386 A KR910005386 A KR 910005386A
Authority
KR
South Korea
Prior art keywords
chamber
heating means
deposition equipment
semiconductor deposition
gas
Prior art date
Application number
KR1019890011389A
Other languages
Korean (ko)
Other versions
KR930002318B1 (en
Inventor
김재붕
장진
Original Assignee
김재붕
장진
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김재붕, 장진 filed Critical 김재붕
Priority to KR1019890011389A priority Critical patent/KR930002318B1/en
Publication of KR910005386A publication Critical patent/KR910005386A/en
Application granted granted Critical
Publication of KR930002318B1 publication Critical patent/KR930002318B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

내용 없음No content

Description

반도체 증착장치Semiconductor deposition equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 증착장치의 분해도.1 is an exploded view of a deposition apparatus of the present invention.

제2도는 본 발명의 증착장치의 조립 구조단면도.2 is a cross-sectional view of the assembly structure of the deposition apparatus of the present invention.

Claims (2)

반도체 재료의 증착장치에 있어서, 제1챔버(42)를 가지며, 상기 제1챔버내에 가열수단(46)을 가지는 제1챔버부분(12)과, 상기 제1챔버(42)내로 상기 가열수단(46)에 의해 여기하고 여기에너지를 발생하기 위한 개스를 제공하기 위한 개스인입관(44)과, 상기 제1챔버부분(12)과 개구(64)를 통해 연결되는 제2챔버(78)를 가지며, 상기 반도체재료의 증착을 위한 기판을 설치하기 위한 가열가능한 기판홀더(80)와, 소오스개스를 제공하는 소오스관과, 상기 제1챔버(42) 및 제2챔버(78)를 진공으로 하기 위한 진공펌프와 연결되는 진공출구(88)를 가지는 제2챔버부분(14)으로 구성함을 특징으로 하는 반도체 재료의 증착장치.A deposition apparatus for a semiconductor material, comprising: a first chamber portion (12) having a first chamber (42) and a heating means (46) in said first chamber, and said heating means (12) into said first chamber (42); Gas inlet pipe 44 to excite by 46 and to provide a gas for generating excitation energy, and a second chamber 78 connected through the first chamber portion 12 and the opening 64; And a heatable substrate holder 80 for installing a substrate for deposition of the semiconductor material, a source tube providing a source gas, and vacuuming the first chamber 42 and the second chamber 78. And a second chamber portion (14) having a vacuum outlet (88) connected to the vacuum pump. 제1항에 있어서, 상기 가열수단(46)은 상기 제1챔버(42)와 제2챔버(78)의 연결개구(64)상에 설치됨을 특징으로 하는 반도체 재료의 증착장치.The apparatus of claim 1, wherein the heating means (46) is provided on a connection opening (64) of the first chamber (42) and the second chamber (78). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890011389A 1989-08-10 1989-08-10 Semiconductor deposition equipment KR930002318B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890011389A KR930002318B1 (en) 1989-08-10 1989-08-10 Semiconductor deposition equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890011389A KR930002318B1 (en) 1989-08-10 1989-08-10 Semiconductor deposition equipment

Publications (2)

Publication Number Publication Date
KR910005386A true KR910005386A (en) 1991-03-30
KR930002318B1 KR930002318B1 (en) 1993-03-29

Family

ID=19288816

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890011389A KR930002318B1 (en) 1989-08-10 1989-08-10 Semiconductor deposition equipment

Country Status (1)

Country Link
KR (1) KR930002318B1 (en)

Also Published As

Publication number Publication date
KR930002318B1 (en) 1993-03-29

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