[go: up one dir, main page]

KR910001906A - Plasma processing device and method - Google Patents

Plasma processing device and method

Info

Publication number
KR910001906A
KR910001906A KR1019900008816A KR900008816A KR910001906A KR 910001906 A KR910001906 A KR 910001906A KR 1019900008816 A KR1019900008816 A KR 1019900008816A KR 900008816 A KR900008816 A KR 900008816A KR 910001906 A KR910001906 A KR 910001906A
Authority
KR
South Korea
Prior art keywords
processing device
plasma processing
plasma
processing
Prior art date
Application number
KR1019900008816A
Other languages
Korean (ko)
Other versions
KR930008497B1 (en
Inventor
미쯔오 도꾸다
쥰조 아즈마
도루 오쯔보
야스히로 야마구찌
이찌로 사사끼
Original Assignee
가부시끼가이샤 히다찌세이샤꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1152311A external-priority patent/JP2760845B2/en
Application filed by 가부시끼가이샤 히다찌세이샤꾸쇼 filed Critical 가부시끼가이샤 히다찌세이샤꾸쇼
Publication of KR910001906A publication Critical patent/KR910001906A/en
Application granted granted Critical
Publication of KR930008497B1 publication Critical patent/KR930008497B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1019900008816A 1989-06-16 1990-06-15 Plasma treatment apparatus and method Expired - Fee Related KR930008497B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1152311A JP2760845B2 (en) 1988-07-08 1989-06-16 Plasma processing apparatus and method
JP89-152311 1989-06-16
JP16708989 1989-06-30
JP89-167089 1989-06-30

Publications (2)

Publication Number Publication Date
KR910001906A true KR910001906A (en) 1991-01-31
KR930008497B1 KR930008497B1 (en) 1993-09-07

Family

ID=15843215

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900008816A Expired - Fee Related KR930008497B1 (en) 1989-06-16 1990-06-15 Plasma treatment apparatus and method

Country Status (2)

Country Link
JP (1) JP3053105B2 (en)
KR (1) KR930008497B1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5645644A (en) * 1995-10-20 1997-07-08 Sumitomo Metal Industries, Ltd. Plasma processing apparatus
JP4654176B2 (en) * 1996-02-22 2011-03-16 住友精密工業株式会社 Inductively coupled plasma reactor
JP3567736B2 (en) * 1998-05-25 2004-09-22 株式会社日立製作所 Plasma processing equipment
JP3792089B2 (en) * 2000-01-14 2006-06-28 シャープ株式会社 Plasma process equipment
JP4222707B2 (en) * 2000-03-24 2009-02-12 東京エレクトロン株式会社 Plasma processing apparatus and method, gas supply ring and dielectric
JP5068458B2 (en) * 2006-01-18 2012-11-07 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP4677918B2 (en) * 2006-02-09 2011-04-27 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US8809203B2 (en) * 2007-06-05 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using a microwave plasma CVD apparatus
US9277637B2 (en) * 2010-11-17 2016-03-01 Tokyo Electron Limited Apparatus for plasma treatment and method for plasma treatment
JP7184254B2 (en) * 2018-12-06 2022-12-06 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
JP3053105B2 (en) 2000-06-19
KR930008497B1 (en) 1993-09-07
JPH0394422A (en) 1991-04-19

Similar Documents

Publication Publication Date Title
KR910003490A (en) Parallel processing device and parallel processing method
DE69030744D1 (en) Plasma processing device
DE69028796D1 (en) Evacuation device and method
DE68928863D1 (en) Image processing method and device
DE68929383D1 (en) Image processing device and method
KR890700998A (en) Plasma processing method and device and mode converter for the device
KR910010637A (en) Etching method and etching device
DE68927134D1 (en) Microwave plasma processing device
DE69030279D1 (en) Image processing method and device
DE69024571D1 (en) Information processing method and device
DE69027134D1 (en) Character processing device
DE69230450D1 (en) Program processing system and method
DE69130897D1 (en) Vacuum treatment method and device
DE69420880D1 (en) Bulb processing method and device
TR25824A (en) CLEANING DEVICE AND PROCESSING
DE69318480D1 (en) Plasma processing device
KR880701473A (en) Zero processing receiving device and method
EP0424086A3 (en) Arithmetic processing apparatus and method used thereby
DE59208004D1 (en) Photographic processing method and device therefor
DE68928557D1 (en) Image processing device and method
DE69421872D1 (en) Plasma generation method and device and plasma processing method and device
DE69321763D1 (en) Data processing method and device
DE69030347D1 (en) Plasma process, procedure and device
DE69213281D1 (en) Laser processing method and laser processing device
DE68926263D1 (en) Clipping method and processing device

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19900615

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19900615

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19930416

Patent event code: PE09021S01D

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

Comment text: Decision on Publication of Application

Patent event code: PG16051S01I

Patent event date: 19930813

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19931119

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19931222

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19931222

End annual number: 3

Start annual number: 1

PR1001 Payment of annual fee

Payment date: 19960711

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 19970714

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 19971227

Start annual number: 6

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20010719

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20020807

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20030902

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20030902

Start annual number: 11

End annual number: 11

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee