KR910000995B1 - Low Temperature Fired Ceramics - Google Patents
Low Temperature Fired Ceramics Download PDFInfo
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- KR910000995B1 KR910000995B1 KR1019880017151A KR880017151A KR910000995B1 KR 910000995 B1 KR910000995 B1 KR 910000995B1 KR 1019880017151 A KR1019880017151 A KR 1019880017151A KR 880017151 A KR880017151 A KR 880017151A KR 910000995 B1 KR910000995 B1 KR 910000995B1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Abstract
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Description
본 발명은 유리-세라믹계 기판재료에 관한 것으로서 저온소성을 통하여 제조되며, 특히 다층회로기판용 재료로서 적합한 새로운 저온소성용 세라믹스에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to glass-ceramic substrate materials, and to novel low-temperature firing ceramics, which are manufactured through low temperature firing, and which are suitable as materials for multilayer circuit boards.
최근 전자산업분야에 있어서는 전자기기의 소형경량화, 고성능화, 고기능화 및 저가격화의 경향에 따라 이에 사용되는 회로소자도 IC에서 LSI나 VLSI 등의 고집적화, 고속화회로로 발달하기에 이르렀는 바, 이에 따라 이들 고집적회로를 실장하기 위한 전자회로기판 역시 고속화 및 고밀도화에 부합하는 재료의 개발이 요구되고 있다.Recently, in the electronics industry, the circuit elements used in the electronic devices have been developed into high-integration and high-speed circuits such as LSI and VLSI in accordance with the trend of miniaturization, high performance, high functionality, and low cost of electronic devices. Electronic circuit boards for mounting circuits are also required to develop materials that meet high speed and high density.
일반적으로 회로기판용 재료로 이용되기 위해서는 고열전도성, 저유전율 및 저유전손실, 고신뢰성, 열팽창계수의 실리콘과의 적합성, 내열성, 화학적 안전성 및 경제성 등의 전기적특성 및 물리적특성이 요구되며, 이와 같은 성질을 어느정도 만족시키는 재료로서 현재 사용되고 있는 IC 회로기판용 세라믹스로는 알루미나계 재료가 널리 알려져 있다(solid state tech. 14(1). P40, 1971).In general, in order to be used as a circuit board material, electrical and physical properties such as high thermal conductivity, low dielectric constant and low dielectric loss, high reliability, thermal expansion coefficient compatibility with silicon, heat resistance, chemical safety and economic efficiency are required. Alumina-based materials are widely known as ceramics for IC circuit boards which are currently used as materials satisfying some properties (solid state tech. 14 (1). P40, 1971).
이 알루미나계 기판재료의 Al2O3함량은 92-96wt%로서 1500-1600℃의 온도에서 소성되며, 유전율(ε) 10.5-12, 유전손실(tanδ) 2×10-3∼5×10-3, 체적저항율(ρ) 2×1013∼1×1014(Ω-cm), 열팽창계수 7.0×10-6∼7.5×10-6/℃, 항절온도 3000(kg/㎠), 표면조도 1.0-2.0(μRa)를 나타낸다.The Al 2 O 3 content of this alumina-based substrate material is 92-96 wt% and is calcined at a temperature of 1500-1600 ° C., with a dielectric constant (ε) of 10.5-12 and a dielectric loss (tanδ) of 2 × 10 −3 to 5 × 10 − 3 , Volume resistivity (ρ) 2 × 10 13 to 1 × 10 14 (Ω-cm), coefficient of thermal expansion 7.0 × 10 -6 to 7.5 × 10 -6 / ℃, resistance temperature 3000 (kg / ㎠), surface roughness 1.0 -2.0 (μRa) is shown.
그러나, 상기 알루미나계 기판재료는 1500℃의 고온에서 소성이 이루어지므로 기판상에 사용되는 배선도체 역시 비교적 융점이 높은 Mo,W,Mo-Mn등의 저항이 높은 금속이 사용되어야 함과 더불어 이같은 도체의 산화방지를 위하여 반드시 환원분위기를 유지하여야 함에 따라 기판재료의 고밀도화 및 저가격화 측면에서 문제점이 있다.However, since the alumina substrate material is fired at a high temperature of 1500 ° C., the wiring conductor used on the substrate must also use a metal having high resistance such as Mo, W, Mo-Mn, etc., which has a relatively high melting point. Since the reducing atmosphere must be maintained to prevent oxidation of the substrate, there is a problem in terms of high density and low price of the substrate material.
한편, 기판재료에 있어서 유전율(ε)은 T=33.3×(T : 1cm당 신호전달지연시간)의 관계식에서 알 수 있는 바와 같이 신호전달지연시간에 상당한 영향을 미침에 따라 저유전율을 갖는 것이 바람직한 바, 상기 알루미나계 기판재료의 유전율은 최대 10정도의 값을 지님으로써 기판재료로서는 큰 값을 나타낸다.On the other hand, in the substrate material, the dielectric constant ε is T = 33.3 × As can be seen from the relationship of (T: signal propagation delay time per cm), it is desirable to have a low dielectric constant as it significantly affects the signal propagation delay time. The dielectric constant of the alumina substrate material is a value of about 10 at most. It has a large value as the substrate material.
또한, 기판재료의 유전손실(tanδ)이 크면 신호전류에 의해 배선주변의 유전체층에 전자계가 열에너지로 변환되어 신호손실에 나쁜 영향을 미침과 아울러 열에너지에 의해 기판의 온도가 상승되어 IC칩의 오동작 또는 파괴를 초래함에 따라 기판재료의 유전손실은 가능한 한 적은것이 바람직하나 상기 알루미나계 기판재료의 유전손실은 비교적 큰 값을 나타내어 고속회로 기판재료로의 이용에는 문제점이 있으며, 사용되는 배선도체(Mo,W,Mo-Mn)의 저항이 높아 회로의 고속화 및 고밀도화에 문제점이 있다.In addition, if the dielectric loss tanδ of the substrate material is large, the electromagnetic field is converted into thermal energy in the dielectric layer around the wiring by the signal current, which adversely affects the signal loss, and the temperature of the substrate is increased by the thermal energy, resulting in malfunction of the IC chip or It is preferable that the dielectric loss of the substrate material is as small as possible as it causes breakage, but the dielectric loss of the alumina-based substrate material has a relatively large value, which causes problems in the use of high-speed circuit board materials. The high resistance of W, Mo-Mn) has a problem of high speed and high density of the circuit.
이와 같은 알루미나계 기판재료의 문제점을 해결하기 위한 방편으로 최근 개발된 재료로서 보로실리케이트 유리를 주성분으로 하는 저온소성용 유리-세라믹계의 기판이 알려져 있다(IEEE, Transaction on Components Hybrids, and Manufacturing Technology, Vol CHMT-6, No4, P382, 1983).As a recently developed material for solving the problems of such alumina-based substrate material, a low-temperature fired glass-ceramic substrate based on borosilicate glass is known (IEEE, Transaction on Components Hybrids, and Manufacturing Technology, Vol CHMT-6, No 4, P382, 1983).
그러나, 이 유리-세라믹계 기판재료는 주성분인 보로실리케이트 유리의 유전율이 낮다는 장점은 있으나, 보론성분이 과량함유되면 공기중의 수분과 반응하여 붕산이 유리되어 내수성이 약한 문제점이 있다.However, the glass-ceramic substrate material has an advantage of low dielectric constant of borosilicate glass, which is a main component. However, when the boron component is excessively contained, boric acid is released by reacting with moisture in the air, which results in weak water resistance.
따라서, 본 발명은 상기 종래의 알루미나계 기판재료와 보로실리케이트 유리-세라믹계 기판재료가 지니고 있는 제반 문제점을 개선하기 위하여 개발된 것으로, 저온소성이 가능할 뿐만 아니라 회로기판의 다층화, 소형화 및 저가격화를 도모할 수 있는 저온소성용 세라믹스를 제공하는데 그 목적이 있다.Accordingly, the present invention was developed to improve the problems associated with the conventional alumina-based substrate material and borosilicate glass-ceramic substrate material. The present invention is not only capable of low-temperature firing but also provides a multilayered, miniaturized and low-cost circuit board. It is an object of the present invention to provide a low-temperature firing ceramic.
본 발명의 유리-세라믹계 기판재료는 종래의 알루미나계 기판재료에 비해 저유전율, 저유전손실 및 저열팽창계수를 나타내는 한편, 내수성과 강도가 우수한 특징이 있다.The glass-ceramic substrate material of the present invention exhibits low dielectric constant, low dielectric loss, and low coefficient of thermal expansion, and has excellent water resistance and strength, compared to conventional alumina substrate materials.
또한, 본 발명 기판재료는 내부전극으로서 Ag,Ag-Pb,Cu,Ni 등의 도체저항이 낮고 비교적 값이 싼 재료를 사용함에 따라 잡음발생이 작고, 신호전달지연해소 및 고속도화가 가능한 다층기판용 재료라는 특징이 있다.In addition, the substrate material of the present invention uses a low-resistance and relatively inexpensive material such as Ag, Ag-Pb, Cu, Ni, etc. as the internal electrode, so that the generation of noise is small, signal transmission delay resolution, and high speed are possible. It is characterized by a material.
이와 같은 본 발명 재료는 유리조성물과 세라믹조성물(Al2O3)을 일정비율로 혼합하여 저온소성하여 제조되는 바, 이를 구체적으로 설명하면, CaO 5-28wt%, Al2O30-15wt%, BaO 5-15wt%, SiO240-50wt%, ZnO 5-10wt%, B2O32-25wt% 및 제조상 불가피한 금속산화물 10wt% 이하로 이루어진 유리분말 55-75wt%의 Al3O3분말 45-25wt%의 조성을 갖는 자기조성물을 900-1000℃에서 저온소성하여 제조되는 저온소성용 세라믹스이다.Such a material of the present invention is prepared by mixing a glass composition and a ceramic composition (Al 2 O 3 ) at a predetermined ratio and baking at a low temperature. Specifically, CaO 5-28 wt% and Al 2 O 3 0-15 wt% Al 3 O 3 powder of 55-75 wt% glass powder consisting of 5-15 wt% BaO, 40-50 wt% SiO 2 , 5-10 wt% ZnO, 2-25 wt% B 2 O 3, and 10 wt% or less unavoidable metal oxide It is a low-temperature firing ceramics manufactured by low-temperature firing a magnetic composition having a composition of 45-25wt% at 900-1000 ℃.
본 발명 기판재료의 함유성분에 대한 수치한정 이유는 다음과 같다.The reason for numerical limitation about the containing component of this invention substrate material is as follows.
SiO2: 40-50wt%SiO 2 : 40-50wt%
SiO2의 함량이 40wt%보다 적어지게 되면 기계적강도 및 화학적 안정성면에서 불리하며 소결온도가 높아지게 되는 문제점이 있으며, 그 함량이 50wt%를 넘으면 도체페이스트(paste)의 이동에 의해 체적저항이 저하되어 고밀도 배선이 곤란하며 열팽창계수가 증가한다.If the content of SiO 2 is less than 40wt%, it is disadvantageous in terms of mechanical strength and chemical stability and the sintering temperature is high.If the content is more than 50wt%, the volume resistivity is reduced by the movement of the conductor paste. High density wiring is difficult and thermal expansion coefficient is increased.
Al2O3: 0-15wt%Al 2 O 3 : 0-15wt%
Al2O3는 기판의 강도에 커다란 영향을 미치는 원소로서 그 함유량이 15wt%를 넘게되면 유리조성원료를 용융시켜 분말로 만드는 과정에 있어 용융온도의 상승을 초래하여 유리분말의 제조에 문제점이 있으며, Al2O3의 함유량이 적어질수록 강도가 낮아지게 된다.Al 2 O 3 is an element that greatly affects the strength of the substrate. If the content exceeds 15wt%, the melting temperature of the glass composition material is increased and the melting temperature is increased. The lower the content of Al 2 O 3, the lower the strength.
CaO : 5-28wt%CaO: 5-28wt%
CaO의 함량이 5wt%보다 적게되면 열팽창계수가 커지고 전기 절연성이 낮아지게 되며, 28wt%를 초과하게 되면 유리분말제조시 실투가 일어나기 쉬우며 기판소성시 결정화가 저온에서 시작되어 치밀한 소결체의 제조가 곤란하다.When the CaO content is less than 5wt%, the coefficient of thermal expansion and the electrical insulation are low, and when it exceeds 28wt%, devitrification easily occurs during the manufacture of glass powder, and when the substrate is fired, crystallization starts at low temperature, making it difficult to manufacture a dense sintered body. Do.
BaO : 5-15wt%BaO: 5-15wt%
BaO의 함량이 5wt%보다 적게되면 기계적 강도가 저하되고 표면조도가 증가하게 된다.When the content of BaO is less than 5wt%, the mechanical strength is lowered and the surface roughness is increased.
B2O3: 5-25wt%B 2 O 3 : 5-25wt%
B2O3의 함량이 5wt%보다 적게되면 유리의 연화점이 높아져서 1000℃ 이하에서의 저온소성이 곤란하며 표면상태 또한 저하하게 되고, 25wt%를 초과할 경우에는 내구성이 문제가 되며 동시에 유동성분이 증대되어 성형상태를 유지할 수 없게된다.When the content of B 2 O 3 is less than 5wt%, the softening point of the glass becomes high, so that low temperature firing at 1000 ° C or less is difficult, and the surface state is also lowered. As a result, the molding state cannot be maintained.
ZnO : 5-10wt%ZnO: 5-10wt%
ZnO는 유리조성물의 핵생성제로 첨가되는 원소로서 그 함량이 5wt%보다 적게되면 핵생성이 활발치 못하게 되며, 5wt%를 초과할 경우에는 열팽창계수와 유전손실이 현저하게 증가하게 된다.ZnO is an element added as a nucleating agent of the glass composition, the content of which is less than 5wt%, the nucleation is not active, and when it exceeds 5wt%, the coefficient of thermal expansion and dielectric loss is significantly increased.
금속화합물 : 10wt% 이하Metal compound: 10wt% or less
유리분말중에 혼입되는 금속화합물은 Na2O,K2O,Fe2O3,PbO,SrO2,TiO2및 MgO 등으로서 이들 산화물은 원료자체에 혼입된 것이거나 유리조성물 제조상 불가피하게 함유된 불순물이며 이들 금속산화물이 10wt% 이하로 함유되더라도 기판재료의 성질에 크게 영향을 미치지 않아 제거할 필요가 없으나 Na2O,K2O 및 PbO는 전기적특성에 나쁜 영향을 미치므로 이들 원소의 합은 5wt% 이하로 유지되어야 한다.Metal compounds incorporated in the glass powder are Na 2 O, K 2 O, Fe 2 O 3 , PbO, SrO 2 , TiO 2 and MgO. These oxides are either incorporated into the raw materials themselves or inevitably contained in the production of glass compositions. Although these metal oxides contain less than 10wt%, they do not need to be removed because they do not greatly affect the properties of the substrate material, but the sum of these elements is 5wt because Na 2 O, K 2 O and PbO adversely affect the electrical properties. Should be kept below%.
유리 분말 : 55-75wt%Glass Powder: 55-75wt%
유리분말은 상기 SiO2,Al2O3,CaO,BaO,B2O3,ZnO 금속화합물을 소정배합비로 혼합하여 1450℃에서 5시간 가열하여 유리화한 후 급속냉각하여 분쇄함으로써 얻어진다. 이 유리분말의 수치한정 이유는 아래의 알루미나분말에 대한 성분한정 이유에서 설명된다.The glass powder is obtained by mixing the SiO 2 , Al 2 O 3 , CaO, BaO, B 2 O 3 , and ZnO metal compounds in a predetermined blending ratio, heating at 1450 ° C. for 5 hours, vitrifying, and then quenching by rapid cooling. The reason for limiting the numerical value of this glass powder is explained below for the reason for limiting the ingredients for the alumina powder.
알루미나분말 : 25-45wt%Alumina Powder: 25-45wt%
자기조성물의 조성비에 있어서 유리분말을 55-75wt%로 하고 알루미나분말을 25-45wt%로 한정한 이유는, 알루미나분말의 함량이 45wt% 이상, 즉, 유리분말의 함량이 55wt% 이하로 되는 경우에는 1000℃ 이상의 소성온도가 요구된다. 즉 1000℃ 이하의 온도에서는 기판재료로서 요구되는 바의 치밀한 소결체의 제조가 불가능하게 된다. 반면에 알루미나분말의 함량이 25wt% 이하 즉, 유리분말의 함량이 75wt% 이상으로 되면 900℃ 이하의 온도에서도 소성이 가능하긴 하나 그 소성온도의 범위가 매우 협소하며, 또한 소결체의 변형이나 융착 등의 바람직하지 못한 결과를 초래하여 양호한 기판재료를 얻을 수 없게된다.The reason for limiting the glass powder to 55-75wt% and the alumina powder to 25-45wt% in the composition ratio of the magnetic composition is when the content of the alumina powder is 45wt% or more, that is, the glass powder content is 55wt% or less. Requires a firing temperature of at least 1000 ° C. That is, at the temperature of 1000 degrees C or less, manufacture of the compact sintered compact which is required as a substrate material becomes impossible. On the other hand, when the content of alumina powder is 25wt% or less, that is, the content of glass powder is 75wt% or more, it is possible to bake at a temperature of 900 ° C or less, but the range of the firing temperature is very narrow, and the deformation and fusion of the sintered body This results in an undesirable result and makes it impossible to obtain a good substrate material.
이와 같은 성분 및 조성범위를 갖는 본 발명 기판재료는 다음과 같은 방법으로 제조된다.The substrate material of the present invention having such a component and composition range is manufactured by the following method.
먼저, CaCO3,SiO2,Al2O3,ZnO,BaCO3,H3BO3등의 원료산화물을 소정의 비율로 정확하게 평량하여 혼합한 다음, 이 혼합된 분말을 1450℃의 온도에서 5시간에 걸쳐 유리화하여 급속냉각하여 유리분말을 제조한다. 이 유리분말을 그 함량이 55-75wt%가 되도록 조정하여 소정량의 알루미나분말과 혼합하여 분쇄 및 건조를 행한 후 이 건조된 분말에 결합제를 첨가하여 가압성형한 다음 900-1000℃에서 소성함으로써 본 발명의 저온 소성용 세라믹스가 제조되어진다.First, raw oxides such as CaCO 3 , SiO 2 , Al 2 O 3 , ZnO, BaCO 3 , H 3 BO 3 are accurately weighed and mixed at a predetermined ratio, and then the mixed powder is mixed at a temperature of 1450 ° C. for 5 hours. Vitrified over and rapidly cooled to prepare glass powder. The glass powder is adjusted to 55-75wt%, mixed with a predetermined amount of alumina powder, pulverized and dried, and then press-molded by adding a binder to the dried powder, followed by firing at 900-1000 ° C. The low temperature calcination ceramics of the invention are produced.
특히, 본 발명의 자기조성물은 공기 또는 비산화성 분위기하에서 Ag,Ag-Pb,Cu,Ni,Au 등을 도체회로로 사용하여 900-1000℃에서의 동시소성이 가능하며, 또한 본 발명의 자기조성물을 다층회로기판으로 이용하고자 할 경우에는 Cu,Ni,Ag,Ag-Pd 등의 재료를 내부도체로 사용할 수 있으며 Cu와 Ni를 회로도체로 이용하여 질소가스 분위기중에서 소성하면 된다.In particular, the magnetic composition of the present invention is capable of simultaneous firing at 900-1000 ° C. using Ag, Ag-Pb, Cu, Ni, Au, etc. as a conductor circuit in an air or non-oxidizing atmosphere, and also the magnetic composition of the present invention. In order to use as a multilayer circuit board, materials such as Cu, Ni, Ag, Ag-Pd can be used as the inner conductor, and Cu and Ni can be used as the circuit conductors and fired in a nitrogen gas atmosphere.
더우기, 상기 Ag,Ag-Pd,Cu 도체재료는 그 비저항이 종래 알루미나계 기판재료에 사용된 Mo의 1/10 이하의 값을 나타냄에 따라 배선을 더욱 미세화할 수 있는 효과가 있을 뿐아니라 소결온도 또한 1000℃ 이하의 저온이기 때문에 배선도체의 확산반응이 일어나지 않는 장점이 있다.In addition, the Ag, Ag-Pd, Cu conductor material has a specific resistance of less than 1/10 of the Mo used in the conventional alumina-based substrate material, so that the wiring can be further refined as well as the sintering temperature. In addition, since the low temperature is less than 1000 ℃ there is an advantage that the diffusion reaction of the wiring conductor does not occur.
한편, 이와 같은 본 발명 기판재료의 효과로는, 열팽창계수가 5∼6×10-4/℃로서 종래의 알루미나계 다층기판에 비해 상당히 낮은 값을 나타내어 LSI칩과의 직접 결합이 가능하며, 유전율(ε) 및 유전손실에 있어서도 각기 5-9(1MHz), 1∼10×10-4로서 알루미나계 기판재료에 비해 낮기 때문에 고주파에서 신호의 고속응답이 가능한 효과가 있다.On the other hand, the effect of the substrate material of the present invention, the coefficient of thermal expansion is 5 ~ 6 × 10 -4 / ℃ significantly lower than that of the conventional alumina-based multilayer substrate, and can be directly bonded to the LSI chip, the dielectric constant (ε) and dielectric loss are 5-9 (1 MHz) and 1-10 × 10 −4 , respectively, which are lower than those of the alumina-based substrate material, so that high-speed response of the signal at high frequency is possible.
또한, 본 발명 세라믹스는 비중이 종래의 알루미나계 다층기판보다도 적어(2.8-3.1g/㎤) 취급이 용이하고 표면조도에 있어서도 알루미나의 절반인 0.4-0.5(μRa)로서 도체페이스트의 인쇄성 및 정밀도에 있어서 유리할 뿐만 아니라, Ag,Cu,Au 등의 저항도체 재료의 사용이 가능하여 회로기판의 고속화 및 고밀도화에 특히 적합하다.In addition, the ceramics of the present invention have a specific gravity less than that of conventional alumina-based multilayer boards (2.8-3.1 g / cm 3) for easy handling and 0.4-0.5 (μRa) of half of alumina in surface roughness. In addition to being advantageous in this regard, it is possible to use a resistive conductor material such as Ag, Cu, Au, etc., which is particularly suitable for high speed and high density of circuit boards.
한편, 본 발명은 1000℃ 이하의 저온에서 소성함에 따라 치밀한 소결체를 얻을 수 있어 다층회로기판을 비롯한 내열공업부품, 식기, 장식품 등에 유용하게 이용될 수 있다.On the other hand, the present invention can obtain a compact sintered body by firing at a low temperature of less than 1000 ℃ can be usefully used in heat-resistant industrial parts, tableware, ornaments and the like, such as a multilayer circuit board.
이하. 본 발명의 실시예에 대하여 기술한다.Below. An embodiment of the present invention will be described.
[실시예 1]Example 1
CaCO387g, SiO2120g, Al2O327g, ZnO 21g, BaCO330g, H3BO327g을 팽량하여 10시간동안 혼합한 후, 이 혼합분말을 1450℃에서 5시간 유리화하여 급속냉각하여 분말로 만들었다. 다음, 이 유리분말 120g과 알루미나 80g을 혼합, 분쇄하여 건조한 후 건조된 분말에 결합제로 폴리비닐알콜 10% 수용액을 2wt% 첨가하여 1000kg/㎠의 압력으로 가압성형한 후 900-1000℃에서 5시간동안 소성하였다. 이와 같이 하여 소성된 시편의 제반특성을 측정하였던 바, 시편의 측정조건은 다음과 같다.CaCO 3 87g, SiO 2 120g, Al 2 O 3 27g, ZnO 21g, BaCO 3 30g, H 3 BO 3 27g was mixed and mixed for 10 hours, and then the mixed powder was vitrified at 1450 ° C for 5 hours and rapidly cooled. Made into powder. Next, 120 g of the glass powder and 80 g of alumina were mixed, pulverized, dried, and then, 2 wt% of a polyvinyl alcohol 10% aqueous solution was added to the dried powder as a binder and press-molded at a pressure of 1000 kg / cm 2 for 5 hours at 900-1000 ° C. Calcined for In this way, the overall characteristics of the fired specimen were measured. The measurement conditions of the specimen were as follows.
체적저항율(ρ) : (D.C 250V) ASTM D257-78Volume resistivity (ρ): (D.C 250V) ASTM D257-78
유전율(ε) : (1MHz) ASTM D150-81Permittivity (ε): (1MHz) ASTM D150-81
유전손실(tanδ) : (1MHz) ASTM D150-81Dielectric Loss (tanδ): (1MHz) ASTM D150-81
항절강도 : ASTM E855-84(3-굽힘)Sectional Strength: ASTM E855-84 (3-Bending)
열팽창계수 : (25-500℃) ASTM D696-79Thermal Expansion Coefficient: (25-500 ℃) ASTM D696-79
이와 같이 하여 측정된 시편의 특성치는 아래의 표 1에서 실시예 1 내지 실시예 10에 나타나 있다.The characteristic values of the specimens thus measured are shown in Examples 1 to 10 in Table 1 below.
[실시예 2]Example 2
CaCO366g, SiO2138g, Al2O328g, ZnO 21g, BaCO330g, H3BO345g을 팽량하여 혼합한 후 1450℃에서 5시간에 걸쳐 유리화하여 급속냉각한 후 분말로 만들었다.66 g of CaCO 3 , 138 g of SiO 2 , 28 g of Al 2 O 3 , 21 g of ZnO, 30 g of BaCO 3 , and 45 g of H 3 BO 3 were mixed and mixed, and then vitrified at 1450 ° C. for 5 hours to form a powder.
이 유리 분말 120g과 알루미나분말 80g은 트리클로로에틸렌과 테트라클로로에틸렌을 3:2로 혼합한 용매 120g과 해교제로서 span85(상품명 ; 동경화성 Co.) 3.6g의 첨가하에 볼밀에 의해 24시간동안 혼합되었다. 1차 혼합된 이장은 결합제로서 폴리비닐부티랄레진 12g과 가소제로서 디부틸프탈산 18g의 첨가하에 다시 24시간 동안 2차볼밀링을 행하였다. 이와 같이 하여 혼합된 이장의 점도는 800cps이었으나 이후의 탈포공정을 거쳐 점도는 18,000-20,000cps로 조절된 후, 닥터브레이드장치를 이용하여 1.5-2mm 두께의 시트를 얻었다. 이 시트는 2.5×2.5cm의 크기로 절단되어 900-1000℃로 소성된 후 각 특성에 대한 측정이 행해졌는 바, 표 1중의 실시예 11 및 실시예 12는 이와 같은 방법으로 제조된 시편이다.120 g of this glass powder and 80 g of alumina powder were mixed for 24 hours by a ball mill under the addition of 120 g of a solvent in which trichloroethylene and tetrachloroethylene were mixed 3: 2 and 3.6 g of span85 (trade name: Co., Ltd.) as a peptizing agent. It became. The first mixed sheet was subjected to secondary ball milling for another 24 hours under the addition of 12 g of polyvinyl butyral resin as a binder and 18 g of dibutyl phthalic acid as a plasticizer. The viscosity of the mixed sheets in this way was 800 cps, but after the degassing step, the viscosity was adjusted to 18,000-20,000 cps, and a sheet of 1.5-2 mm was obtained by using a doctor blade device. The sheet was cut to a size of 2.5 × 2.5 cm and calcined at 900-1000 ° C., and then measured for each property. Examples 11 and 12 in Table 1 were specimens prepared in this manner.
[표 1]TABLE 1
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