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KR900019263A - Capacitor manufacturing method using oxygen ion implantation of MNOS - Google Patents

Capacitor manufacturing method using oxygen ion implantation of MNOS Download PDF

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Publication number
KR900019263A
KR900019263A KR1019890007031A KR890007031A KR900019263A KR 900019263 A KR900019263 A KR 900019263A KR 1019890007031 A KR1019890007031 A KR 1019890007031A KR 890007031 A KR890007031 A KR 890007031A KR 900019263 A KR900019263 A KR 900019263A
Authority
KR
South Korea
Prior art keywords
mnos
oxygen ion
ion implantation
capacitor manufacturing
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019890007031A
Other languages
Korean (ko)
Inventor
황이연
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019890007031A priority Critical patent/KR900019263A/en
Publication of KR900019263A publication Critical patent/KR900019263A/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음No content

Description

MNOS의 산소이온 주입을 이용한 커패시터 제조방법Capacitor manufacturing method using oxygen ion implantation of MNOS

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도 (가)내지 (라)는 본 발명 산소이온 주입을 이용한 커패시터 제조에 대한 공정도.Figure 2 (a) to (d) is a process chart for the capacitor manufacturing using the oxygen ion implantation of the present invention.

Claims (1)

질화물 실리콘을 이용한 MNOS의 커패시터를 제조방법에 있어서, n+모노 실리콘(11)위에 산소이온을 주입하고, 질화물층(16)을 증착하여 순간적인 어닐을 수행하여 산화물층(14)을 형성하는 것을 특징으로 하는 MNOS의 산소이온 주입을 이용한 커패시터 제조방법.In the method of manufacturing a capacitor of MNOS using silicon nitride, injecting oxygen ions on n + mono silicon (11), depositing the nitride layer (16) to perform an instantaneous annealing to form the oxide layer (14) Capacitor manufacturing method using oxygen ion injection of MNOS characterized in that. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890007031A 1989-05-25 1989-05-25 Capacitor manufacturing method using oxygen ion implantation of MNOS Ceased KR900019263A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890007031A KR900019263A (en) 1989-05-25 1989-05-25 Capacitor manufacturing method using oxygen ion implantation of MNOS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890007031A KR900019263A (en) 1989-05-25 1989-05-25 Capacitor manufacturing method using oxygen ion implantation of MNOS

Publications (1)

Publication Number Publication Date
KR900019263A true KR900019263A (en) 1990-12-24

Family

ID=67840449

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890007031A Ceased KR900019263A (en) 1989-05-25 1989-05-25 Capacitor manufacturing method using oxygen ion implantation of MNOS

Country Status (1)

Country Link
KR (1) KR900019263A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100510101B1 (en) * 1998-12-31 2006-04-21 매그나칩 반도체 유한회사 Method for manufacturing analog capacitor of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100510101B1 (en) * 1998-12-31 2006-04-21 매그나칩 반도체 유한회사 Method for manufacturing analog capacitor of semiconductor device

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19890525

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19940517

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19890525

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19971230

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 19980331

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 19971230

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I