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KR900001034A - 반도체장치 - Google Patents

반도체장치 Download PDF

Info

Publication number
KR900001034A
KR900001034A KR1019890006455A KR890006455A KR900001034A KR 900001034 A KR900001034 A KR 900001034A KR 1019890006455 A KR1019890006455 A KR 1019890006455A KR 890006455 A KR890006455 A KR 890006455A KR 900001034 A KR900001034 A KR 900001034A
Authority
KR
South Korea
Prior art keywords
semiconductor device
electrical
wiring member
insulating film
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019890006455A
Other languages
English (en)
Inventor
야스노리 나까자끼
Original Assignee
야마무라 가쯔미
세이꼬 엡슨 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63158799A external-priority patent/JPH027528A/ja
Priority claimed from JP63158798A external-priority patent/JPH027527A/ja
Application filed by 야마무라 가쯔미, 세이꼬 엡슨 가부시끼 가이샤 filed Critical 야마무라 가쯔미
Publication of KR900001034A publication Critical patent/KR900001034A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 구조를 도시하는 단면도,
제2도는 종래의 구조를 도시하는 단면도,
제3A도. 제3B도 및 제3C도는 본 발명을 실시하기 위한 제조공정 단면도.

Claims (1)

  1. 하이포라 트랜지스터를 기판의 일부 또는 전영역에 형성함으로서 구성된 반도체 장치에 있어서, 전기 하이포라 트랜지스터에 베이스 영역의 일부로 전기 베이스 영역의 확산층의 상부에 직접 전기적으로 접속된 반도체 재료를 성분으로 하는 제1의 배선재 또는 금속 실리사이드를 성분으로 하는 제1의 배선재와, 전기 바이포라 트랜시스터의 에미터 영역과 직접 전기적으로 접속된 반도체 재료를 성분으로 하는 제2배선재와 전기 제1배선재를 분리하는 전기 제1배선재의 상부에 있는 제1절연막 및 전기 제2배선재 형성전에 전기 기판전면에 피착한 제2절연막을 전면 부식함으로서 형성한 측벽 절연막을 가지는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890006455A 1988-06-27 1989-05-15 반도체장치 Ceased KR900001034A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP63158799A JPH027528A (ja) 1988-06-27 1988-06-27 半導体装置
JP63158798A JPH027527A (ja) 1988-06-27 1988-06-27 トランジスター
JP158799 1988-06-27
JP158798 1988-06-27

Publications (1)

Publication Number Publication Date
KR900001034A true KR900001034A (ko) 1990-01-31

Family

ID=26485805

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890006455A Ceased KR900001034A (ko) 1988-06-27 1989-05-15 반도체장치

Country Status (3)

Country Link
KR (1) KR900001034A (ko)
GB (1) GB2220102B (ko)
HK (1) HK41194A (ko)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8103032A (nl) * 1980-08-04 1982-03-01 Fairchild Camera Instr Co Werkwijze voor het vervaardigen van een snelwerkende bipolaire transistor en transistor vervaardigd volgens deze werkwijze.
US4492717A (en) * 1981-07-27 1985-01-08 International Business Machines Corporation Method for forming a planarized integrated circuit
US4495512A (en) * 1982-06-07 1985-01-22 International Business Machines Corporation Self-aligned bipolar transistor with inverted polycide base contact
US4545114A (en) * 1982-09-30 1985-10-08 Fujitsu Limited Method of producing semiconductor device
JPS5975661A (ja) * 1982-10-22 1984-04-28 Fujitsu Ltd 半導体装置及びその製造方法
DE3580206D1 (de) * 1984-07-31 1990-11-29 Toshiba Kawasaki Kk Bipolarer transistor und verfahren zu seiner herstellung.
JPS6146063A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体装置の製造方法
EP0231740A3 (en) * 1986-01-30 1989-07-12 Texas Instruments Incorporated A polysilicon self-aligned bipolar device and process of manufacturing same
JPH0628266B2 (ja) * 1986-07-09 1994-04-13 株式会社日立製作所 半導体装置の製造方法
JPS6473766A (en) * 1987-09-16 1989-03-20 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit

Also Published As

Publication number Publication date
GB2220102A (en) 1989-12-28
GB8913801D0 (en) 1989-08-02
HK41194A (en) 1994-05-06
GB2220102B (en) 1992-01-29

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19890515

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19900223

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19890515

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19930127

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 19930611

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 19930127

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I