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KR890006121A - 적외선 노를 사용한 구리 후막 전도체의 제조방법 - Google Patents

적외선 노를 사용한 구리 후막 전도체의 제조방법 Download PDF

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Publication number
KR890006121A
KR890006121A KR1019880012444A KR880012444A KR890006121A KR 890006121 A KR890006121 A KR 890006121A KR 1019880012444 A KR1019880012444 A KR 1019880012444A KR 880012444 A KR880012444 A KR 880012444A KR 890006121 A KR890006121 A KR 890006121A
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KR
South Korea
Prior art keywords
furnace
inert gas
substrate
paste
added
Prior art date
Application number
KR1019880012444A
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English (en)
Other versions
KR910000799B1 (ko
Inventor
쥬니어 에드워드 앤드류 헤어터크
로버트 타스츨러 데이비드
프랜시스 이엑스트 월터
Original Assignee
윌리암 에프 마쉬
에어 프로덕츠 앤드 케미칼스 인코오 포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리암 에프 마쉬, 에어 프로덕츠 앤드 케미칼스 인코오 포레이티드 filed Critical 윌리암 에프 마쉬
Publication of KR890006121A publication Critical patent/KR890006121A/ko
Application granted granted Critical
Publication of KR910000799B1 publication Critical patent/KR910000799B1/ko

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
    • H05K3/1291—Firing or sintering at relative high temperatures for patterns on inorganic boards, e.g. co-firing of circuits on green ceramic sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
    • H01L21/705—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thick-film circuits or parts thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1126—Firing, i.e. heating a powder or paste above the melting temperature of at least one of its constituents

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemical Treatment Of Metals (AREA)

Abstract

내용 없음

Description

적외선 노를 사용한 구리 후막 전도체의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

  1. 세라믹 기판에 적용하기에 알맞는 페이스트를 형성하고 상기 페이스트를 종래의 스크린 프린팅 방법으로 상기 기판에 칠한 다음 상기 프린트된 기판을 건조하고 4,000 이상 100,000Å 미만의 파장을 갖는 조사 에너지원에 의하여 가열되는 노내에서 가온에 의하여 상기 기판과 상기 페이스트를 소결하여 전기적 부품을 형성하는 것으로 구성된 후막 전기적 부품의 제조방법에 있어서, 상기 페이스트와 기판을 불활성 기체 분위기하에서 850° 내지 1,000℃ 사이의 온도로 유지되는 상기 노의 고온 구역에서 소결하며 100 내지 3,000ppm의 물을 첨가하는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 상기 조사 에너지원이 4,000과 25,000Å 사이의 파장을 갖는 것을 특징으로 하는 방법.
  3. 제1항에 있어서, 상기 조사 에너지원이 25,000과 100,000Å 사이의 파장을 갖는 것을 특징으로 하는 방법.
  4. 제1항에 있어서, 상기 물 첨가량이 100과 2,000부피 ppm 사이인 것을 특징으로 하는 방법.
  5. 제1항에 있어서, 상기 페이스트와 세라믹 부품을 상기 노의 고온 구역에서 1 내지 7분 사이의 다양한 시간으로 유지하는 것을 특징으로 하는 방법
  6. 제1항에 있어서, 상기 노에서 페이스트와 부품기판의 예열, 고온 구역에서의 소결 및 냉각이 이루어지며 모든 공정이 10과 30분 사이에 실시되는 것을 특징으로 하는 방법.
  7. 제1항에 있어서, 불활성 기체 분위기가 질소인 것을 특징으로 하는 방법.
  8. 제1항에 있어서, 불활성 기체 분위기가 아르곤인 것을 특징으로 하는 방법.
  9. 제1항에 있어서, 상기 노의 고온 구역의 불활성 기체-물 분위기에 10 내지 20,000ppm의 아산화질소가 첨가되는 것을 특징으로 하는 방법.
  10. 제1항에 있어서, 상기 노가 불활성 기체 분위기로 유지되는 예열 구역을 함유하여 그곳에 100~3,000ppm의 물이 첨가되는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880012444A 1987-09-24 1988-09-24 적외선 노를 사용한 구리 후막 전도체의 제조방법 KR910000799B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10038287A 1987-09-24 1987-09-24
US100382 1987-09-24

Publications (2)

Publication Number Publication Date
KR890006121A true KR890006121A (ko) 1989-05-18
KR910000799B1 KR910000799B1 (ko) 1991-02-08

Family

ID=22279458

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880012444A KR910000799B1 (ko) 1987-09-24 1988-09-24 적외선 노를 사용한 구리 후막 전도체의 제조방법

Country Status (9)

Country Link
US (1) US4965092A (ko)
EP (1) EP0308851A3 (ko)
JP (1) JPH0340485A (ko)
KR (1) KR910000799B1 (ko)
CN (1) CN1010448B (ko)
BR (1) BR8804851A (ko)
CA (1) CA1306903C (ko)
MX (1) MX169531B (ko)
ZA (1) ZA887143B (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202154A (en) * 1988-09-19 1993-04-13 Ngk Spark Plug Co., Ltd. Method of producing thick-film gas sensor element having improved stability
US5194294A (en) * 1989-02-20 1993-03-16 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process for preparing electrical connection means, in particular interconnection substances of hybrid circuits
CA2051842A1 (en) * 1990-10-16 1992-04-17 Satish S. Tamhankar Method for firing ceramic thick film circuits with photopolymerizable paste materials and products produced thereby
DE4100392A1 (de) * 1991-01-09 1992-07-16 Rheinmetall Gmbh Verfahren zur trocknung von dickschichtpasten
US5432015A (en) * 1992-05-08 1995-07-11 Westaim Technologies, Inc. Electroluminescent laminate with thick film dielectric
EP0736892B1 (en) 1995-04-03 2003-09-10 Canon Kabushiki Kaisha Manufacturing method for electron-emitting device, electron source, and image forming apparatus
US6174388B1 (en) * 1999-03-15 2001-01-16 Lockheed Martin Energy Research Corp. Rapid infrared heating of a surface
DE60043848D1 (de) * 1999-12-28 2010-04-01 Jgc Catalysts & Chemicals Ltd Methode zur herstellung eines dielektrischen films mit einer niedrigen dielektrizitätskonstante und halbleiteranordnung mit so einem film
US6663826B1 (en) * 2000-07-12 2003-12-16 Ut-Battelle, Llc Method of high-density foil fabrication
JP5129077B2 (ja) * 2008-09-30 2013-01-23 富士フイルム株式会社 配線形成方法
EP3401039A1 (de) * 2017-05-12 2018-11-14 Heraeus Deutschland GmbH & Co. KG Verfahren zum verbinden von bauelementen mittels metallpaste
CN112062607A (zh) * 2020-05-29 2020-12-11 南京凯泰化学科技有限公司 一种铜浆印制电路板的制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234367A (en) * 1979-03-23 1980-11-18 International Business Machines Corporation Method of making multilayered glass-ceramic structures having an internal distribution of copper-based conductors
US4406944A (en) * 1981-03-23 1983-09-27 Radiant Technology Corp. Devices for mounting infrared lamps in furnaces
DE3277271D1 (en) * 1981-03-23 1987-10-15 Radiant Technology Corp Method for firing thick film electronic circuits
EP0074605B1 (en) * 1981-09-11 1990-08-29 Kabushiki Kaisha Toshiba Method for manufacturing multilayer circuit substrate
JPS60250686A (ja) * 1984-05-25 1985-12-11 日本碍子株式会社 セラミツク配線基板の製造方法
JPS61155243A (ja) * 1984-12-28 1986-07-14 富士通株式会社 グリ−ンシ−ト組成物
US4627160A (en) * 1985-08-02 1986-12-09 International Business Machines Corporation Method for removal of carbonaceous residues from ceramic structures having internal metallurgy
US4622240A (en) * 1985-11-12 1986-11-11 Air Products And Chemicals, Inc. Process for manufacturing thick-film electrical components
JPS6393193A (ja) * 1986-10-07 1988-04-23 松下電器産業株式会社 銅導体厚膜回路基板の製造方法

Also Published As

Publication number Publication date
CN1035396A (zh) 1989-09-06
KR910000799B1 (ko) 1991-02-08
CN1010448B (zh) 1990-11-14
BR8804851A (pt) 1989-04-25
EP0308851A3 (en) 1990-03-21
US4965092A (en) 1990-10-23
JPH0520916B2 (ko) 1993-03-22
JPH0340485A (ja) 1991-02-21
CA1306903C (en) 1992-09-01
EP0308851A2 (en) 1989-03-29
MX169531B (es) 1993-07-09
ZA887143B (en) 1990-05-30

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