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KR890005828A - 고에너지 방사선용 양성 방사선 민감성 혼합물 및 이로부터 제조된 방사선 민감성 기록물질 - Google Patents

고에너지 방사선용 양성 방사선 민감성 혼합물 및 이로부터 제조된 방사선 민감성 기록물질 Download PDF

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KR890005828A
KR890005828A KR1019880011787A KR880011787A KR890005828A KR 890005828 A KR890005828 A KR 890005828A KR 1019880011787 A KR1019880011787 A KR 1019880011787A KR 880011787 A KR880011787 A KR 880011787A KR 890005828 A KR890005828 A KR 890005828A
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radiation sensitive
optionally substituted
radiation
compound
aryl
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KR1019880011787A
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KR960014054B1 (ko
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프리드리히 도셀 카를
담멜 랄프
링그나우 유에르겐
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베틀라우퍼, 오일러
훽스트 아크티엔게젤샤프트
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/24—Halogenated derivatives
    • C07C39/367—Halogenated derivatives polycyclic non-condensed, containing only six-membered aromatic rings as cyclic parts, e.g. halogenated poly-hydroxyphenylalkanes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C07C43/225—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing halogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/30—Compounds having groups
    • C07C43/313—Compounds having groups containing halogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/30—Compounds having groups
    • C07C43/315—Compounds having groups containing oxygen atoms singly bound to carbon atoms not being acetal carbon atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)

Abstract

내용 없음

Description

고에너지 방사선용 양성 방사선 민감성 혼합물 및 이로부터 제조된 방사선 민감성 기록물질
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (9)

  1. 방향족성으로 결합된 염소 또는 브롬을 함유하고 12 미만의pKa치를 갖거나 이러한pKa치를 갖는 화합물의 유도체인, 고에너지 방사선의 작용하에서 산을 형성하는 화합물 및 산분해가능한 화합물을 함유하는 양성방사선 민감성 혼합물.
  2. 제 1 항에 있어서, 산을 형성하는 화합물이 6 내지 10의pKa치를 갖거나 이러한 화합물의 유도체인 방사선 민감성 혼합물.
  3. 제 1 항 또는 제 2 항에 있어서, 산을 형성하는 화합물이 방향족성으로 결합된 염소 또는 브롬원자 적어도 한개를 함유하는 일반식(I)의 화합물인 방사선 민감성 혼합물.
    상기식에서, R은 카복실, OR' 또는 SR'［여기에서, R'는 수소; 아릴, 알콕시, 아릴옥시 또는 하이드록실그룹으로 임의 치환되거나 불소원자로 임의 치환된 알킬; 알콕시, 아릴옥시 또는 하이드록실그룹으로 임의 치환되거나 할로겐원자로 임의 치횐된 아릴; 아실, 알킬술포닐, 아릴술포닐, 알콕시카보닐, 트리오르가노실릴, 트리오르가노스탄닐 이거나 각각 일반식(I)의 추가의 단위의 산소원자에 결합될 2가의 알킬렌, 아릴렌, 비스아실, 술포닐, 알킬렌디술포닐, 디오르가노실릴 또는 디오르가노스탄닐그룹(여기에서, 알킬렌 및 아릴렌 그룹은 상응하는 방법으로 알킬 및 아릴라디칼로 치환될 수 있다)이다］이며, R₁및 R₂는 동일하거나 상이하며 수소; 염소; 브롬; 아릴, 알콕시, 아릴옥시 또는 하이드록실그룹으로 임의 치환되거나 불소원자로 임의 치환된 알킬; 또는 알콕시, 아릴옥시 또는 하이드록실그룹으로 임의 치환되거나 할로겐원자로 임의 치환된 아릴이고, n은 0 내지 3이며, n이 0인 경우, A는 수소; 염소; 브롬; 알콕시, 아릴옥시, 하이드록실 또는 아릴라디칼로 임의 치환되거나 불소원자로 임의 치환된 아릴; 또는 알콕시, 아릴옥시, 하이드록실 또는 카복실라디칼로 임의 치환되거나 할로겐원자로 임의 치환된 아릴이고, n이 1인 경우, A는 단일결합, -O-, -S-, -S0₂-, -NH-, -NR₃(여기에서, R₃는 알킬, 특히(C₁-C₃알킬) 또는 아릴 특히 페닐이다), 알킬렌 또는 퍼플루오로알킬렌이며, n이 2인 경우, A는(여기에서, R₃는 상기 정의된 바와 같다) 또는이고, n이 3인경우, A는이며, B는, 카복실, 치환된 카보닐, 특히 알킬카보닐 또는 아릴카보닐, 카복시알킬 또는 치환된 술포닐 아미도 카보닐이다.
  4. 제 1 항 내지 제 3 항중 어느 한 항에 있어서, 산형성 화합물이 단량체이고 상기 혼합물이 물에 불용성이나 수성 알칼리에 가용성인 결합제를 함유하는 방사선 민감성 혼합물.
  5. 제 1 항 내지 제 3 항중 어느 한 항에 있어서, 산형성 화합물이 중합체인 방사선 민감성 혼합물.
  6. 제 5 항에 있어서, 산형성 화합물이 하이드록시스티렌 중합체 또는 공중합체 또는 페놀성수지인 방사선 민감성 혼합물.
  7. 제 5 항 또는 제 6 항에 있어서, 물에 불용성이나 수성 알칼리에 가용성인 중합체성 결합제를 추가로 함유하는 방사선 민감성 혼합물.
  8. 담체 및 방사선 민감성 피복 조성물을 필수적으로 함유하는 고에너지 방사선용 양성방사선 민감성 기록물질에 있어서, 제 1 항 내지 제 7 항중 어느 한 항에서 청구된 방사선 민감성 혼합물이 사용된 기록물질.
  9. 제 1 항 내지 제 7 항중 어느 한 항에서 청구된 방사선-민감성 혼합물을 담체에 적용시켜 이를 접착촉진제로 임의 피복시키고, 이 물질을 건조시키고 계속하여 고에너지 방사선, 특히 X-선 또는 전자방사선으로 조사하여 영상을 형성시킨 다음, 계속해서 수성 알칼리성 현상제를 사용하여 현상시켜 상을 노출시킴을 특징으로하여, 고-에너지 방사선용 양성 방사선 민감성 기록물질을 제조하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880011787A 1987-09-13 1988-09-13 고에너지 방사선용 양성 방사선 민감성 혼합물 및 이로부터 제조된 방사선 민감성 기록물질 KR960014054B1 (ko)

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DEP3730784.3 1987-09-13
DE3730784 1987-09-13
DE3821585A DE3821585A1 (de) 1987-09-13 1988-06-25 Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
DEP3821585.3 1988-06-25

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KR960014054B1 KR960014054B1 (ko) 1996-10-11

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US (1) US5403697A (ko)
EP (1) EP0318649B1 (ko)
JP (1) JPH01106039A (ko)
KR (1) KR960014054B1 (ko)
AT (1) ATE132635T1 (ko)
DE (2) DE3821585A1 (ko)
HK (1) HK143196A (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3821584A1 (de) * 1988-06-25 1989-12-28 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
DE3907953A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
EP0502819A1 (de) * 1991-03-01 1992-09-09 Ciba-Geigy Ag Säurekatalytisch vernetzbare Copolymere
US5348838A (en) * 1991-07-31 1994-09-20 Kabushiki Kaisha Toshiba Photosensitive composition comprising alkali soluble binder and photoacid generator having sulfonyl group
EP0659781A3 (de) * 1993-12-21 1995-09-27 Ciba Geigy Ag Maleinimidcopolymere, insbesonder für Photoresists.
US5370988A (en) * 1994-02-28 1994-12-06 Minnesota Mining And Manufacturing Company Print stabilizers and antifoggants for photothermography
WO1995032091A1 (en) * 1994-05-24 1995-11-30 Exxon Chemical Patents Inc. Fibers and fabrics incorporating lower melting propylene polymers
KR101719550B1 (ko) 2008-07-02 2017-03-24 브리티쉬 콜롬비아 캔써 에이전시 브랜치 디글리시드 에테르 유도체 치료법 및 이의 사용 방법
CA2786319C (en) 2010-01-06 2019-03-12 British Columbia Cancer Agency Branch Bisphenol derivatives and their use as androgen receptor activity modulators
US9365510B2 (en) 2012-04-16 2016-06-14 British Columbia Cancer Agency Branch Aziridine bisphenol ethers and related compounds and methods for their use
EP2994451A4 (en) 2013-05-10 2016-10-05 British Columbia Cancer Agency ESTER DERIVATIVES OF ANDROGEN RECEPTOR MODULATORS AND METHOD FOR THEIR USE
KR20160054523A (ko) 2013-09-09 2016-05-16 브리티쉬 콜롬비아 캔써 에이전시 브랜치 암 영상화 및 치료용 할로겐화 화합물, 및 이들의 사용 방법
AU2016206412B2 (en) 2015-01-13 2020-10-08 British Columbia Cancer Agency Branch Heterocyclic compounds for cancer imaging and treatment and methods for their use
WO2016141458A1 (en) 2015-03-12 2016-09-15 British Columbia Cancer Agency Branch Bisphenol ether derivatives and methods for using the same
US20170298033A1 (en) 2016-04-15 2017-10-19 The University Of British Columbia Bisphenol derivatives and their use as androgen receptor activity modulators
WO2019226991A1 (en) 2018-05-25 2019-11-28 Essa Pharma, Inc. Androgen receptor modulators and methods for their use
AU2019362061B2 (en) 2018-10-18 2024-09-26 Essa Pharma Inc Androgen receptor modulators and methods for their use
WO2020198712A1 (en) 2019-03-28 2020-10-01 Essa Pharma, Inc. Pharmaceutical compositions and combinations comprising inhibitors of the androgen receptor and uses thereof
CN111153774B (zh) * 2020-01-16 2022-11-11 江苏理工学院 一种同时合成四溴双酚a单甲基醚和二甲基醚的制备方法
CN115916170A (zh) 2020-04-17 2023-04-04 埃萨制药股份有限公司 固体形式的n-末端结构域雄激素受体抑制剂及其用途

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3518175A (en) * 1965-05-12 1970-06-30 Du Pont Process of forming crosslinkable copolymers of polyesters and substituted benzophenones and product thereof
US3536489A (en) * 1966-09-16 1970-10-27 Minnesota Mining & Mfg Heterocyclic iminoaromatic-halogen containing photoinitiator light sensitive compositions
US3515552A (en) * 1966-09-16 1970-06-02 Minnesota Mining & Mfg Light-sensitive imaging sheet and method of using
US3374160A (en) * 1966-10-26 1968-03-19 Gen Motors Corp Photopolymerization with o-bromoacetophenone as a photoinitiator
US3754911A (en) * 1970-07-08 1973-08-28 Keuffel & Esser Co Photoimaging method comprising crosslinking of alkoxy methyl polyamides
US3987037A (en) * 1971-09-03 1976-10-19 Minnesota Mining And Manufacturing Company Chromophore-substituted vinyl-halomethyl-s-triazines
US3888804A (en) * 1971-11-02 1975-06-10 Bio Degradable Plastics Photodegradable hydrocarbon polymers
US3779778A (en) * 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
DE2342068A1 (de) * 1972-08-21 1974-04-04 Fuji Photo Film Co Ltd Lichtempfindliche druckplatte und verfahren zum erzeugen unloeslicher bilder
CH621416A5 (ko) * 1975-03-27 1981-01-30 Hoechst Ag
DE2718259C2 (de) * 1977-04-25 1982-11-25 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliches Gemisch
DE2718254C3 (de) * 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
DE2742631A1 (de) * 1977-09-22 1979-04-05 Hoechst Ag Lichtempfindliche kopiermasse
US4289845A (en) * 1978-05-22 1981-09-15 Bell Telephone Laboratories, Inc. Fabrication based on radiation sensitive resists and related products
DE2829511A1 (de) * 1978-07-05 1980-01-24 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE2928636A1 (de) * 1979-07-16 1981-02-12 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE3008411A1 (de) * 1980-03-05 1981-09-10 Merck Patent Gmbh, 6100 Darmstadt Neue aromatisch-aliphatische ketone, ihre verwendung als photoinitiatoren sowie photopolymerisierbare systeme enthaltend solche ketone
DE3021590A1 (de) * 1980-06-09 1981-12-17 Hoechst Ag, 6000 Frankfurt 4-halogen-5-(halogenmethyl-phenyl)-oxazol-derivate, ein verfahren zu ihrer herstellung und sie enthaltenden strahlungsempfindliche massen
US4368253A (en) * 1981-01-28 1983-01-11 Ciba-Geigy Corporation Image formation process
DE3107109A1 (de) * 1981-02-26 1982-09-09 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial
DE3144499A1 (de) * 1981-11-09 1983-05-19 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes lichtempfindliches kopiermaterial
DE3151078A1 (de) * 1981-12-23 1983-07-28 Hoechst Ag, 6230 Frankfurt Verfahren zur herstellung von reliefbildern
US4398001A (en) * 1982-03-22 1983-08-09 International Business Machines Corporation Terpolymer resist compositions
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE3246106A1 (de) * 1982-12-13 1984-06-14 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial
DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
GB8413395D0 (en) * 1984-05-25 1984-07-04 Ciba Geigy Ag Production of images
DE3445276A1 (de) * 1984-12-12 1986-06-19 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch, daraus hergestelltes lichtempfindliches aufzeichnungsmaterial und verfahren zur herstellung einer flachdruckform
CA1307695C (en) * 1986-01-13 1992-09-22 Wayne Edmund Feely Photosensitive compounds and thermally stable and aqueous developablenegative images
US4863827A (en) * 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist

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US5403697A (en) 1995-04-04
EP0318649A2 (de) 1989-06-07
EP0318649A3 (de) 1991-08-07
ATE132635T1 (de) 1996-01-15
HK143196A (en) 1996-08-09
DE3854858D1 (de) 1996-02-15
JPH01106039A (ja) 1989-04-24
EP0318649B1 (de) 1996-01-03
DE3821585A1 (de) 1989-03-23
KR960014054B1 (ko) 1996-10-11

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