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KR890005555A - EL light emitting device using superlattice - Google Patents

EL light emitting device using superlattice Download PDF

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Publication number
KR890005555A
KR890005555A KR870010702A KR870010702A KR890005555A KR 890005555 A KR890005555 A KR 890005555A KR 870010702 A KR870010702 A KR 870010702A KR 870010702 A KR870010702 A KR 870010702A KR 890005555 A KR890005555 A KR 890005555A
Authority
KR
South Korea
Prior art keywords
superlattice
light emitting
emitting device
layer
type semiconductor
Prior art date
Application number
KR870010702A
Other languages
Korean (ko)
Other versions
KR940001182B1 (en
Inventor
박철홍
Original Assignee
최근선
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 최근선, 주식회사 금성사 filed Critical 최근선
Priority to KR1019870010702A priority Critical patent/KR940001182B1/en
Publication of KR890005555A publication Critical patent/KR890005555A/en
Application granted granted Critical
Publication of KR940001182B1 publication Critical patent/KR940001182B1/en

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

내용 없음No content

Description

초격자를 이용한 이엘(EL)발광소자EL light emitting device using superlattice

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 동작원리를 나타낸 초격자의 설명도로서,2 is an explanatory diagram of a superlattice showing the principle of operation of the present invention,

(a)는 에너지 밴드 설명도.(a) is an energy band explanatory diagram.

(b)는 초격자의 구조도.(b) is a schematic diagram of a superlattice.

제3도는 본 발명의 EL발광소자의 개략구성도.3 is a schematic configuration diagram of an EL light emitting device of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

31 : 금속전극 32, 35 : N형 반도체31 metal electrode 32, 35 N-type semiconductor

33 : 초격자층 34 : 발광층33: superlattice layer 34: light emitting layer

36 : 투명전극 37 : 글라스36 transparent electrode 37 glass

Claims (2)

금속전극(31) 및 N형 반도체(32), 초격자층(33), ZnSe : Mn의 발광층(34), N형반도체(35), 투명전극(36), 글라스(37)를 순차적으로 적층하여 구성함을 특징으로 하는 초격자를 이용한 EL발광소자.Metal electrode 31 and N-type semiconductor 32, superlattice layer 33, ZnSe: Mn emitting layer 34, N-type semiconductor 35, transparent electrode 36, glass 37 are sequentially stacked EL light emitting device using a superlattice, characterized in that configured by. 제1항에 있어서, 상기 초격자층(33)이 CaXSr1-XF2의 재료로 구성됨을 특징으로 하는 초격자를 이용한 EL발광소자.The EL light emitting device using a superlattice according to claim 1, wherein the superlattice layer (33) is made of a material of Ca X Sr 1-X F 2 . ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870010702A 1987-09-26 1987-09-26 EL light emitting device using superlattice KR940001182B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019870010702A KR940001182B1 (en) 1987-09-26 1987-09-26 EL light emitting device using superlattice

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870010702A KR940001182B1 (en) 1987-09-26 1987-09-26 EL light emitting device using superlattice

Publications (2)

Publication Number Publication Date
KR890005555A true KR890005555A (en) 1989-05-15
KR940001182B1 KR940001182B1 (en) 1994-02-16

Family

ID=19264762

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870010702A KR940001182B1 (en) 1987-09-26 1987-09-26 EL light emitting device using superlattice

Country Status (1)

Country Link
KR (1) KR940001182B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100787930B1 (en) * 2006-05-22 2007-12-24 경희대학교 산학협력단 Organic light emitting diode having superlattice structure and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100787930B1 (en) * 2006-05-22 2007-12-24 경희대학교 산학협력단 Organic light emitting diode having superlattice structure and manufacturing method thereof

Also Published As

Publication number Publication date
KR940001182B1 (en) 1994-02-16

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