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KR880010523A - Semiconductor laser device - Google Patents

Semiconductor laser device Download PDF

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Publication number
KR880010523A
KR880010523A KR1019880001238A KR880001238A KR880010523A KR 880010523 A KR880010523 A KR 880010523A KR 1019880001238 A KR1019880001238 A KR 1019880001238A KR 880001238 A KR880001238 A KR 880001238A KR 880010523 A KR880010523 A KR 880010523A
Authority
KR
South Korea
Prior art keywords
semiconductor laser
reflector
laser device
laser
light receiving
Prior art date
Application number
KR1019880001238A
Other languages
Korean (ko)
Other versions
KR900008629B1 (en
Inventor
고오슈우 마스구찌
Original Assignee
이우에 사또시
산요덴끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이우에 사또시, 산요덴끼 가부시끼가이샤 filed Critical 이우에 사또시
Publication of KR880010523A publication Critical patent/KR880010523A/en
Application granted granted Critical
Publication of KR900008629B1 publication Critical patent/KR900008629B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/14—Heads, e.g. forming of the optical beam spot or modulation of the optical beam specially adapted to record on, or to reproduce from, more than one track simultaneously
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)

Abstract

내용 없음No content

Description

반도체 레이저 장치Semiconductor laser device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 실시도로서 제2도의 B-B′선 단면도.1 is a cross-sectional view taken along the line B-B 'of FIG. 2 as an embodiment of the present invention.

제2도는 본 발명의 실시도로서 제1도의 A-A′선 단면도.2 is a cross-sectional view taken along the line A-A 'of FIG. 1 as an embodiment of the present invention.

Claims (1)

각각 두 방향으로 레이저 비임을 사출하는 복수의 반도체 레이저 칩(24)-(26)을 반사기 형상으로 구성한 반도체 레이저 반사기(23)와 상기 반도체 레이저 반사기(23)의 각 레이저 비임을 검출하는 수광 소자와 상기 반도체 레이저 반사기(23)와 상기 수광 소자(27)와의 사이에 배치되고, 상기 각 레이저 비임을 수광 소자(27)로 인도하는 복수의 도파홈(32)-(34)이 형성된 도파부재(31)로 형성되는 반도체 레이저 장치에 있어서, 상기 도파홈(32)-(34)은 그 연산하여 있는 방향이 상기 반도체 레이저 칩(24)-(26)으로부터 사출되는 레이저 광(24a)-(26a)의 사출방향에 대하여 각도를 가지는 것 만큼 폭을 넓게한 것을 특징으로 하는 반도체 레이저 장치.A semiconductor laser reflector 23 having a plurality of semiconductor laser chips 24-26 emitting laser beams in two directions, respectively, in a reflector shape, and a light receiving element for detecting each laser beam of the semiconductor laser reflector 23; A waveguide member 31 disposed between the semiconductor laser reflector 23 and the light receiving element 27, and having a plurality of waveguide grooves 32-34 leading to each of the laser beams. In the semiconductor laser device, the waveguides 32-34 are laser beams 24a-26a which are computed from the semiconductor laser chips 24-26. A semiconductor laser device, characterized in that the width is widened as long as it has an angle with respect to the ejection direction. ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the initial application.
KR1019880001238A 1987-02-20 1988-02-10 Semiconductor laser system KR900008629B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-38251 1987-02-20
JP?62-38251 1987-02-20
JP62038251A JPH0728092B2 (en) 1987-02-20 1987-02-20 Semiconductor laser device

Publications (2)

Publication Number Publication Date
KR880010523A true KR880010523A (en) 1988-10-10
KR900008629B1 KR900008629B1 (en) 1990-11-26

Family

ID=12520093

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880001238A KR900008629B1 (en) 1987-02-20 1988-02-10 Semiconductor laser system

Country Status (2)

Country Link
JP (1) JPH0728092B2 (en)
KR (1) KR900008629B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0297081A (en) * 1988-10-03 1990-04-09 Mitsubishi Electric Corp Semiconductor array laser
JPH0323959U (en) * 1989-07-20 1991-03-12
JPH06169136A (en) * 1992-11-30 1994-06-14 Canon Inc Light emitting device, optical semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS63204781A (en) 1988-08-24
KR900008629B1 (en) 1990-11-26
JPH0728092B2 (en) 1995-03-29

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