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KR880008417A - Method and apparatus for measuring ion implantation dose of semiconductor crystals - Google Patents

Method and apparatus for measuring ion implantation dose of semiconductor crystals Download PDF

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Publication number
KR880008417A
KR880008417A KR870010951A KR870010951A KR880008417A KR 880008417 A KR880008417 A KR 880008417A KR 870010951 A KR870010951 A KR 870010951A KR 870010951 A KR870010951 A KR 870010951A KR 880008417 A KR880008417 A KR 880008417A
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semiconductor crystal
fundamental wavelength
light energy
harmonic
sensing
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KR870010951A
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Korean (ko)
Inventor
로렌스 봄 백 존
빅터 제임스 존
첸딩 왕 찰즈
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원본미기재
포오드 모우터 캄파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8461—Investigating impurities in semiconductor, e.g. Silicon

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Electromagnetism (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Measurement Of Radiation (AREA)

Abstract

내용 없음.No content.

Description

반도체결정의 이온주입 선량(線量)을 측정하는 방법 및 장치Method and apparatus for measuring ion implantation dose of semiconductor crystals

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 이 발명에 이용된 장치의 실시예.1 is an embodiment of a device used in the present invention.

제2도는 제1도에 보인 장치로 진공과 공기매체에서 취해진 이온 선량 강도의 도표,FIG. 2 is a plot of ion dose intensity taken from vacuum and air media with the apparatus shown in FIG.

제3도는 규정된 이온 선량 경계가 있는 시험 웨이퍼를 나타내는 도면.3 shows a test wafer with defined ion dose boundaries.

Claims (12)

간섭성 빛에너지의 비임을 소정 기본파장으로 제공하는 수단, 상기 간섭성 빛 에너지 비임을 맥동시켜 소정 펄스폭과 반복율을 가진 빛에너지의 펄스들을 제공하는 수단, 상기 맥동 간섭성 빛에너지 비임을 반도체결정의 정의된 지역으로 지향시키는 수단, 상기 반도체결정의 상기 정의 지역으로 부터 반사된 상기 기본 파장의 제3고조파를 감지하는 수단, 및 상기 감지수단에 연결되어 상기 반도체 결정으로부터 반사된 에너지의 상기 제3고조파의 강도를 측정하는 수단으로 구성된, 반도체결정의 이온주입 선량을 측정하는 장치.Means for providing a beam of coherent light energy at a predetermined fundamental wavelength; means for pulsating the coherent light energy beam to provide pulses of light energy having a predetermined pulse width and repetition rate; Means for directing to a defined region of the signal, means for sensing a third harmonic of the fundamental wavelength reflected from the defined region of the semiconductor crystal, and the third of energy reflected from the semiconductor crystal connected to the sensing means. An apparatus for measuring the ion implantation dose of a semiconductor crystal, comprising means for measuring the intensity of harmonics. 제1항에 있어서, 상기 지향수단이, 상기 비임제공수단과 상기 반도체결정 사이에서 상기 기본파장은 상기 반도체 결정을 향해 반사하고 상기 기본파장의 상기 제3고조파는 투과시키도록 배향된 다이크로익 미러를 포함하는 장치.2. The dichroic mirror of claim 1, wherein the directing means is oriented such that between the beam providing means and the semiconductor crystal, the fundamental wavelength is reflected toward the semiconductor crystal and the third harmonic of the fundamental wavelength is transmitted. Device comprising a. 제2항에 있어서, 상기 다이크로익 미러가 또한 상기 감지수단과 상기 반도체결정 사이에서 상기 기본파장의 제3고조파만을 투과시키도록 위치된 장치.3. An apparatus according to claim 2, wherein said dichroic mirror is also positioned to transmit only the third harmonic of said fundamental wavelength between said sensing means and said semiconductor crystal. 제3항에 있어서, 상기 지향수단이 상기 간섭성 빛에너지의 비임을 반도체결정의 표면에 수직인 입사각을 갖도록 지향시키는 장치.4. The apparatus of claim 3, wherein the directing means directs the beam of coherent light energy to have an angle of incidence perpendicular to the surface of a semiconductor crystal. 제4항에 있어서, 상기 감지수단이 반도체결정 표면에 수직한 방향으로 상기 반도체결정으로부터 반사된 상기 기본파장의 제3고조파를 수신하는 장치.An apparatus according to claim 4, wherein said sensing means receives a third harmonic of said fundamental wavelength reflected from said semiconductor crystal in a direction perpendicular to a surface of said semiconductor crystal. 제5항에 있어서, 상기 지향수단과 반도체결정의 표면사이의 매체가 공기이고 상기 다이크로익 미러와 반도체결정의 표면 사이의 거리가 공기중의 제3고조파발생의 코히어런스 길이의 짝수배와 같은 장치.6. A medium according to claim 5, wherein the medium between the directing means and the surface of the semiconductor crystal is air and the distance between the dichroic mirror and the surface of the semiconductor crystal is an even multiple of the coherence length of the third harmonic generation in the air. Same device. 간섭성 빛에너지의 비임을 소정 기본파장으로 발생시키는 소오스르 제공하는 단계, 상기 간섭성 빛에너지 비임을 맥동시켜 소정 펄스폭과 반복율을 가진 빛에너지의 펄스들을 제공하는 단계, 상기 맥동 간섭성 빛에너지 비임을 상기 반도체결정의 정의된 지역으로 지역시키는 단계, 상기 반도체결정의 상기 정의 지역으로부터 반사된 상기 기본파장의 제3고조파를 감지하는 단계, 및 상기 반도체결정으로부터 반사된 에너지의 상기 제3고주파의 강도를 측정하는 단계로 구성된, 반도체결정의 이온주입 선량을 측정하는 방법.Providing a source for generating a beam of coherent light energy at a predetermined fundamental wavelength, pulsating the coherent light energy beam to provide pulses of light energy having a predetermined pulse width and repetition rate, the pulsating coherent light energy Localizing a beam to a defined region of the semiconductor crystal, sensing a third harmonic of the fundamental wavelength reflected from the defined region of the semiconductor crystal, and of the third frequency of energy reflected from the semiconductor crystal A method for measuring the ion implantation dose of a semiconductor crystal, comprising measuring the strength. 제7항에 있어서, 상기 지향단계가 상기 비임 소오스와 상기 반도체결정 사이에도 위치되고 상기 기본 파장을 상기 반도체결정을 향해 반사하고 상기 기본파장의 상기 제3고조파를 투과시키도록 배향된 다이크로익 미러를 제공하는 단계를 포함하는 단계.8. The dichroic mirror of claim 7, wherein the directing step is also located between the beam source and the semiconductor crystal and is oriented to reflect the fundamental wavelength toward the semiconductor crystal and to transmit the third harmonic of the fundamental wavelength. Providing a step. 제8항에 있어서, 상기 감지 단계가, 빛에너지를 감지하는 수단을 제공하는 단계를 포함하고, 상기 다이크로익 미러가 상기 감지수단과 상기 반도체결정 사이에 제공되고 위치되어 상기 기본파장의 제3고조파만을 상기 감지수단으로 투과시키는 방법.9. The method of claim 8, wherein said sensing step comprises providing means for sensing light energy, said dichroic mirror being provided and positioned between said sensing means and said semiconductor crystal to form a third of said fundamental wavelength. Transmitting only harmonics to said sensing means. 제9항에 있어서, 상기 지향단계가 상기 간섭성 빛에너의 비임을 반도체결정의 표면에 수직인 입사각을 갖도록 지향시키도록 실행되는 방법.10. The method of claim 9, wherein said directing step is performed to direct the beam of coherent light energy to have an angle of incidence perpendicular to the surface of a semiconductor crystal. 제10항에 있어서, 상기 감지수단이 반도체 결정표면에 수직한 방향으로 상기 반도체결정으로부터 반사된 상기 기본파장의 제3고조파를 수신하도록 제공되는 방법.The method of claim 10, wherein said sensing means is provided to receive a third harmonic of said fundamental wavelength reflected from said semiconductor crystal in a direction perpendicular to a semiconductor crystal surface. 제11항에 있어서, 상기 지향수단과 반도체결정의 표면 사이에 매체가 공기이고, 상기 다이크로익 미러가 공기중의 제3고조파발생의 코히어런스 길이의 짝수배와 같은 거리만큼 반도체 결정의 표면으로부터 떨어진 곳에 제공되는 방법.12. The surface of the semiconductor crystal according to claim 11, wherein the medium is air between the directing means and the surface of the semiconductor crystal, and the dichroic mirror is an even number of times the coherence length of the third harmonic generation in air. Provided away from. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR870010951A 1986-12-02 1987-09-30 Method and apparatus for measuring ion implantation dose of semiconductor crystals Withdrawn KR880008417A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/937,158 US4755049A (en) 1986-12-02 1986-12-02 Method and apparatus for measuring the ion implant dosage in a semiconductor crystal
US937158 1986-12-02

Publications (1)

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KR880008417A true KR880008417A (en) 1988-08-31

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KR870010951A Withdrawn KR880008417A (en) 1986-12-02 1987-09-30 Method and apparatus for measuring ion implantation dose of semiconductor crystals

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US (1) US4755049A (en)
JP (1) JPS63151042A (en)
KR (1) KR880008417A (en)
CA (1) CA1262291A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5074669A (en) * 1989-12-12 1991-12-24 Therma-Wave, Inc. Method and apparatus for evaluating ion implant dosage levels in semiconductors
US5185273A (en) * 1991-09-30 1993-02-09 Motorola, Inc. Method for measuring ions implanted into a semiconductor substrate
TW394977B (en) * 1998-04-21 2000-06-21 United Microelectronics Corp A recycle method for the monitor control chip
US7029933B2 (en) * 2004-06-22 2006-04-18 Tech Semiconductor Singapore Pte. Ltd. Method for monitoring ion implant doses
US7250313B2 (en) * 2004-09-30 2007-07-31 Solid State Measurements, Inc. Method of detecting un-annealed ion implants
KR100699889B1 (en) * 2005-12-29 2007-03-28 삼성전자주식회사 Method for manufacturing semiconductor device with variable ion implantation conditions
US8415620B2 (en) * 2010-01-11 2013-04-09 International Business Machines Corporation Determining doping type and level in semiconducting nanostructures
US8581204B2 (en) * 2011-09-16 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for monitoring ion implantation
US10019565B2 (en) 2015-12-17 2018-07-10 Honeywell Federal Manufacturing & Technologies, Llc Method of authenticating integrated circuits using optical characteristics of physically unclonable functions
US11041827B2 (en) * 2019-04-12 2021-06-22 International Business Machines Corporation Carrier-resolved photo-hall system and method

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US4755049A (en) 1988-07-05
CA1262291A (en) 1989-10-10
JPH0318340B2 (en) 1991-03-12
JPS63151042A (en) 1988-06-23

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19870930

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