KR870009459A - Ic 배선의 접속방법 및 그 장치 - Google Patents
Ic 배선의 접속방법 및 그 장치Info
- Publication number
- KR870009459A KR870009459A KR1019870002629A KR870002629A KR870009459A KR 870009459 A KR870009459 A KR 870009459A KR 1019870002629 A KR1019870002629 A KR 1019870002629A KR 870002629 A KR870002629 A KR 870002629A KR 870009459 A KR870009459 A KR 870009459A
- Authority
- KR
- South Korea
- Prior art keywords
- connection method
- wiring connection
- wiring
- connection
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67138—Apparatus for wiring semiconductor or solid state device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/94—Laser ablative material removal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/961—Ion beam source and generation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12361—All metal or with adjacent metals having aperture or cut
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7097986A JPH0763064B2 (ja) | 1986-03-31 | 1986-03-31 | Ic素子における配線接続方法 |
JP61-70979 | 1986-03-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870009459A true KR870009459A (ko) | 1987-10-26 |
KR940002765B1 KR940002765B1 (ko) | 1994-04-02 |
Family
ID=13447151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870002629A Expired - Lifetime KR940002765B1 (ko) | 1986-03-31 | 1987-03-23 | Ic 배선의 접속방법 및 그 장치 |
Country Status (3)
Country | Link |
---|---|
US (4) | US4868068A (ko) |
JP (1) | JPH0763064B2 (ko) |
KR (1) | KR940002765B1 (ko) |
Families Citing this family (70)
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US6379998B1 (en) * | 1986-03-12 | 2002-04-30 | Hitachi, Ltd. | Semiconductor device and method for fabricating the same |
US5297260A (en) * | 1986-03-12 | 1994-03-22 | Hitachi, Ltd. | Processor having a plurality of CPUS with one CPU being normally connected to common bus |
JPH0763064B2 (ja) * | 1986-03-31 | 1995-07-05 | 株式会社日立製作所 | Ic素子における配線接続方法 |
JPS62281349A (ja) * | 1986-05-29 | 1987-12-07 | Seiko Instr & Electronics Ltd | 金属パタ−ン膜の形成方法及びその装置 |
US6753253B1 (en) * | 1986-06-18 | 2004-06-22 | Hitachi, Ltd. | Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams |
US5055423A (en) * | 1987-12-28 | 1991-10-08 | Texas Instruments Incorporated | Planarized selective tungsten metallization system |
JP2631290B2 (ja) * | 1987-12-29 | 1997-07-16 | セイコー電子工業株式会社 | イオンビーム加工装置 |
JP2696216B2 (ja) * | 1988-01-11 | 1998-01-14 | セイコーインスツルメンツ株式会社 | イオンビーム加工装置 |
JP2807715B2 (ja) * | 1988-01-22 | 1998-10-08 | セイコーインスツルメンツ株式会社 | イオンビーム加工装置 |
US5182231A (en) * | 1988-04-07 | 1993-01-26 | Hitachi, Ltd. | Method for modifying wiring of semiconductor device |
JPH02312237A (ja) * | 1989-05-29 | 1990-12-27 | Hitachi Ltd | 半導体装置とその配線修正方法および配線修正装置 |
US5225771A (en) * | 1988-05-16 | 1993-07-06 | Dri Technology Corp. | Making and testing an integrated circuit using high density probe points |
US5103557A (en) * | 1988-05-16 | 1992-04-14 | Leedy Glenn J | Making and testing an integrated circuit using high density probe points |
US6288561B1 (en) * | 1988-05-16 | 2001-09-11 | Elm Technology Corporation | Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus |
US5139963A (en) * | 1988-07-02 | 1992-08-18 | Hitachi, Ltd. | Method and a system for assisting mending of a semiconductor integrated circuit, and a wiring structure and a wiring method suited for mending a semiconductor integrated circuit |
JP2569139B2 (ja) * | 1988-08-24 | 1997-01-08 | 株式会社日立製作所 | イオンビーム加工方法 |
US5083033A (en) * | 1989-03-31 | 1992-01-21 | Kabushiki Kaisha Toshiba | Method of depositing an insulating film and a focusing ion beam apparatus |
US5052102A (en) * | 1989-06-19 | 1991-10-01 | Shell Oil Company | Laser induced electrical connection of integrated circuits |
JP3009157B2 (ja) * | 1989-07-07 | 2000-02-14 | 株式会社日立製作所 | 配線膜形成方法及びその装置 |
JP2567952B2 (ja) * | 1989-09-05 | 1996-12-25 | 株式会社日立製作所 | Lsi補修配線方法 |
JP2658431B2 (ja) * | 1989-10-04 | 1997-09-30 | 日本電気株式会社 | レーザcvd装置 |
JP3325456B2 (ja) | 1996-05-22 | 2002-09-17 | 株式会社アドバンテスト | メモリリペア方法ならびにそのメモリリペア方法が適用される電子ビームメモリリペア装置およびメモリ冗長回路 |
ATE197746T1 (de) * | 1990-05-31 | 2000-12-15 | Canon Kk | Verfahren zur verdrahtung eines halbleiterbauelementes |
JP2731288B2 (ja) * | 1990-08-28 | 1998-03-25 | 株式会社日立製作所 | 多層配線方法 |
JP2886649B2 (ja) * | 1990-09-27 | 1999-04-26 | 株式会社日立製作所 | イオンビーム加工方法及びその装置 |
US5683547A (en) * | 1990-11-21 | 1997-11-04 | Hitachi, Ltd. | Processing method and apparatus using focused energy beam |
KR920015542A (ko) * | 1991-01-14 | 1992-08-27 | 김광호 | 반도체장치의 다층배선형성법 |
US5156997A (en) * | 1991-02-11 | 1992-10-20 | Microelectronics And Computer Technology Corporation | Method of making semiconductor bonding bumps using metal cluster ion deposition |
US5331172A (en) * | 1991-02-11 | 1994-07-19 | Microelectronics And Computer Technology Corporation | Ionized metal cluster beam systems and methods |
DE4203804C2 (de) * | 1991-03-22 | 1994-02-10 | Siemens Ag | Verfahren zur Herstellung von Kontakten auf einer mit einer UV-transparenten Isolationsschicht bedeckten leitenden Struktur in höchstintegrierten Schaltkreisen |
FR2675309A1 (fr) * | 1991-03-22 | 1992-10-16 | Siemens Ag | Procede pour eliminer localement des couches isolantes transparentes aux ultraviolets, situees sur un substrat semiconducteur. |
DE4229399C2 (de) * | 1992-09-03 | 1999-05-27 | Deutsch Zentr Luft & Raumfahrt | Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements |
US5429730A (en) * | 1992-11-02 | 1995-07-04 | Kabushiki Kaisha Toshiba | Method of repairing defect of structure |
US5316803A (en) * | 1992-12-10 | 1994-05-31 | International Business Machines Corporation | Method for forming electrical interconnections in laminated vias |
US5454161A (en) * | 1993-04-29 | 1995-10-03 | Fujitsu Limited | Through hole interconnect substrate fabrication process |
US6518088B1 (en) * | 1994-09-23 | 2003-02-11 | Siemens N.V. And Interuniversitair Micro-Electronica Centrum Vzw | Polymer stud grid array |
US6409828B1 (en) * | 1994-10-31 | 2002-06-25 | Texas Instruments Incorporated | Method and apparatus for achieving a desired thickness profile in a flow-flange reactor |
US5516722A (en) * | 1994-10-31 | 1996-05-14 | Texas Instruments Inc. | Method for increasing doping uniformity in a flow flange reactor |
US6159753A (en) * | 1996-12-20 | 2000-12-12 | Intel Corporation | Method and apparatus for editing an integrated circuit |
US5700526A (en) * | 1995-05-04 | 1997-12-23 | Schlumberger Technologies Inc. | Insulator deposition using focused ion beam |
US5630880A (en) * | 1996-03-07 | 1997-05-20 | Eastlund; Bernard J. | Method and apparatus for a large volume plasma processor that can utilize any feedstock material |
JP2785803B2 (ja) * | 1996-05-01 | 1998-08-13 | 日本電気株式会社 | フォトマスクの白点欠陥修正方法および装置 |
JPH09320961A (ja) * | 1996-05-31 | 1997-12-12 | Nec Corp | 半導体製造装置及び薄膜トランジスタの製造方法 |
US5904486A (en) * | 1997-09-30 | 1999-05-18 | Intel Corporation | Method for performing a circuit edit through the back side of an integrated circuit die |
US6132561A (en) * | 1997-10-13 | 2000-10-17 | Mincher; Bruce J. | Process for the solvent extraction for the radiolysis and dehalogenation of halogenated organic compounds in soils, sludges, sediments and slurries |
JP2926132B1 (ja) * | 1998-01-23 | 1999-07-28 | セイコーインスツルメンツ株式会社 | 集束イオンビームによる二次イオン像観察方法 |
JP3027968B2 (ja) * | 1998-01-29 | 2000-04-04 | 日新電機株式会社 | 成膜装置 |
US6171944B1 (en) * | 1998-05-07 | 2001-01-09 | Advanced Micro Devices, Inc. | Method for bringing up lower level metal nodes of multi-layered integrated circuits for signal acquisition |
US6936531B2 (en) | 1998-12-21 | 2005-08-30 | Megic Corporation | Process of fabricating a chip structure |
WO2000065644A1 (fr) * | 1999-04-21 | 2000-11-02 | Seiko Instruments Inc. | Technique de restauration d'une interconnexion et dispositif a faisceau ionique focalise |
JP4137329B2 (ja) * | 2000-01-11 | 2008-08-20 | エスアイアイ・ナノテクノロジー株式会社 | 集束イオンビーム加工方法 |
US6580072B1 (en) | 2000-05-03 | 2003-06-17 | Xilinx, Inc. | Method for performing failure analysis on copper metallization |
US6696363B2 (en) * | 2000-06-06 | 2004-02-24 | Ekc Technology, Inc. | Method of and apparatus for substrate pre-treatment |
US6838380B2 (en) * | 2001-01-26 | 2005-01-04 | Fei Company | Fabrication of high resistivity structures using focused ion beams |
US7932603B2 (en) * | 2001-12-13 | 2011-04-26 | Megica Corporation | Chip structure and process for forming the same |
US6692995B2 (en) * | 2002-04-05 | 2004-02-17 | Intel Corporation | Physically deposited layer to electrically connect circuit edit connection targets |
JP4302933B2 (ja) * | 2002-04-22 | 2009-07-29 | 株式会社日立ハイテクノロジーズ | イオンビームによる穴埋め方法及びイオンビーム装置 |
US6894246B2 (en) * | 2002-07-25 | 2005-05-17 | Medtronic, Inc. | Variable environment laser weld system |
JP4141785B2 (ja) * | 2002-10-07 | 2008-08-27 | 株式会社アドバンテスト | パターン幅測長装置、パターン幅測長方法、及び電子ビーム露光装置 |
JP4405865B2 (ja) | 2004-06-24 | 2010-01-27 | 富士通マイクロエレクトロニクス株式会社 | 多層配線構造の製造方法及びfib装置 |
ATE532203T1 (de) * | 2004-08-27 | 2011-11-15 | Fei Co | Lokalisierte plasmabehandlung |
KR100673979B1 (ko) * | 2005-03-17 | 2007-01-24 | 안강호 | 초미립자 제조장치 및 그 방법 |
JP2006317726A (ja) * | 2005-05-13 | 2006-11-24 | Nec Lcd Technologies Ltd | 断線修正方法及びアクティブマトリックス基板の製造方法並びに表示装置 |
TWI341872B (en) * | 2006-08-07 | 2011-05-11 | Ind Tech Res Inst | Plasma deposition apparatus and depositing method thereof |
JP4735491B2 (ja) * | 2006-09-21 | 2011-07-27 | 株式会社日立製作所 | 不良検査方法および装置 |
DE102006054695B4 (de) * | 2006-11-17 | 2014-05-15 | Carl Von Ossietzky Universität Oldenburg | Verfahren zur Regelung nanoskaliger elektronenstrahlinduzierter Abscheidungen |
JP2007142453A (ja) * | 2007-01-25 | 2007-06-07 | Renesas Technology Corp | 半導体デバイスの断面観察方法及び断面観察装置 |
US8617668B2 (en) * | 2009-09-23 | 2013-12-31 | Fei Company | Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition |
US20120263887A1 (en) * | 2011-04-13 | 2012-10-18 | Varian Semiconductor Equipment Associates, Inc. | Technique and apparatus for ion-assisted atomic layer deposition |
EP2749863A3 (en) * | 2012-12-31 | 2016-05-04 | Fei Company | Method for preparing samples for imaging |
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US3597834A (en) * | 1968-02-14 | 1971-08-10 | Texas Instruments Inc | Method in forming electrically continuous circuit through insulating layer |
JPS5144871B2 (ko) * | 1971-09-25 | 1976-12-01 | ||
US4259367A (en) * | 1979-07-30 | 1981-03-31 | International Business Machines Corporation | Fine line repair technique |
GB2073951B (en) * | 1980-04-11 | 1984-10-03 | Hitachi Ltd | Multilayer interconnections for an integrated circuit |
JPS5856332A (ja) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | マスクの欠陥修正方法 |
JPS5966124A (ja) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | 表面処理方法および装置 |
GB2135123B (en) * | 1983-02-10 | 1987-05-20 | Rca Corp | Multi-level metallization structure for semiconductor device and method of making same |
US4569122A (en) * | 1983-03-09 | 1986-02-11 | Advanced Micro Devices, Inc. | Method of forming a low resistance quasi-buried contact |
JPS59168652A (ja) * | 1983-03-16 | 1984-09-22 | Hitachi Ltd | 素子修正方法及びその装置 |
JPS6052022A (ja) * | 1983-08-31 | 1985-03-23 | Nec Corp | マスクパタ−ン修正方法 |
JPS60143649A (ja) * | 1983-12-29 | 1985-07-29 | Hitachi Ltd | 半導体装置の多層配線構造 |
JPS60216555A (ja) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | 半導体装置の製造方法 |
JPS60245227A (ja) * | 1984-05-21 | 1985-12-05 | Seiko Instr & Electronics Ltd | パタ−ン膜の形成方法 |
US4657778A (en) * | 1984-08-01 | 1987-04-14 | Moran Peter L | Multilayer systems and their method of production |
JPS6151940A (ja) * | 1984-08-22 | 1986-03-14 | Nec Corp | 半導体装置の配線構造 |
DE3672378D1 (de) * | 1985-04-23 | 1990-08-09 | Seiko Instr Inc | Vorrichtung zur abscheidung eines elektrisch leitenden und/oder nichtleitenden materials auf einem gegenstand. |
JPH0763064B2 (ja) * | 1986-03-31 | 1995-07-05 | 株式会社日立製作所 | Ic素子における配線接続方法 |
US4900695A (en) * | 1986-12-17 | 1990-02-13 | Hitachi, Ltd. | Semiconductor integrated circuit device and process for producing the same |
-
1986
- 1986-03-31 JP JP7097986A patent/JPH0763064B2/ja not_active Expired - Fee Related
-
1987
- 1987-03-23 KR KR1019870002629A patent/KR940002765B1/ko not_active Expired - Lifetime
- 1987-03-31 US US07/032,753 patent/US4868068A/en not_active Expired - Lifetime
-
1994
- 1994-05-06 US US08/238,888 patent/US5472507A/en not_active Expired - Lifetime
- 1994-10-05 US US08/318,267 patent/US5497034A/en not_active Expired - Fee Related
-
1995
- 1995-11-21 US US08/561,310 patent/US5824598A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5472507A (en) | 1995-12-05 |
US4868068A (en) | 1989-09-19 |
KR940002765B1 (ko) | 1994-04-02 |
US5497034A (en) | 1996-03-05 |
JPS62229956A (ja) | 1987-10-08 |
JPH0763064B2 (ja) | 1995-07-05 |
US5824598A (en) | 1998-10-20 |
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