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KR850006737A - 전류원 장치 - Google Patents

전류원 장치 Download PDF

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Publication number
KR850006737A
KR850006737A KR1019850001245A KR850001245A KR850006737A KR 850006737 A KR850006737 A KR 850006737A KR 1019850001245 A KR1019850001245 A KR 1019850001245A KR 850001245 A KR850001245 A KR 850001245A KR 850006737 A KR850006737 A KR 850006737A
Authority
KR
South Korea
Prior art keywords
transistor
base
resistor
collector
emitter junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019850001245A
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English (en)
Other versions
KR920009548B1 (ko
Inventor
시비닉 에베르트
Original Assignee
아이. 엠. 레르너
엔.브이.필립스 글로아이람펜 파브리켄
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Filing date
Publication date
Application filed by 아이. 엠. 레르너, 엔.브이.필립스 글로아이람펜 파브리켄 filed Critical 아이. 엠. 레르너
Publication of KR850006737A publication Critical patent/KR850006737A/ko
Application granted granted Critical
Publication of KR920009548B1 publication Critical patent/KR920009548B1/ko
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/227—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the supply voltage

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)

Abstract

내용 없음

Description

전류원 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예인 전류원 장치.
제2도는 본 발명의 제2실시예인 전류원 장치.
제3도는 제2도에 도시된 장치의 전류-전압특성.
* 도면의 주요부분에 대한 부호의 설명
2 : 정전원 공급단자 3 : 부전원 공급단자
10 : 정전원 공급단자 11 : 부전원 공급단자

Claims (3)

  1. 제1 및 제2전원공급단자 사이에서 제1저항과 제1트랜지스터의 베이스-에미터 접합의 직렬장치를 구비하는 전류원 장치에서, 출력 전류통로의 전류는 일정한 상수인수를 곱한 제1저항을 통해 흐르는 전류와 같게 발생되며, 제1트랜지스터의 베이스-에미터 접합을 통해 흐르는 전압과 같은 전압이 인가된 제2저항을 통해 흐르는 전류는 상기 출력 전류통로의 전류에 합산되며, 제2저항의 저항치는 상기 직렬장치에서 베이스-에미터의 수에 상기 증배상수를 곱한 값으로 제1저항의 저항치를 나눈 몫과 같은 것을 특징으로 하는 전류원장치.
  2. 제1항의 장치에서, 제2저항과 제2트랜지스터의 베이스-에미터 접합은 제1트랜지스터의 베이스-에미터 접합과 병렬로 연결되어 있으며, 콜렉터가 제2트랜지스터의 콜렉터에 연결된 제3트랜지스터의 베이스-에미터 접합은 제1트랜지스터의 콜렉터와 베이스사이에 장치되어 있는 것을 특징으로 하는 전류원장치.
  3. 제1항의 장치에 있어서, 출력전류통로는 제1트랜지스터의 콜렉터를 구비하며, 상기 콜렉터는 베이스와 콜렉터사이의 낮은 임피던스 연결을 가진 제2트랜지스터를 구비하는 제1전류미터회로의 입력에 결합되어 있고, 제2저항과 제3트랜지스터의 베이스-에미터 접합이 제2트랜지스터의 베이스-에미터 접합과 병렬로 연결되어 있으며, 상기 제3트랜지스터는 콜렉터가 제2전류미터회로의 입력에 결합되어 있고, 상기 미터회로의 출력은 제1트랜지스터의 베이스에 결합되어 있는 것을 특징으로 하는 전류원장치.
    ※ 참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019850001245A 1984-02-29 1985-02-27 전류원 장치 Expired KR920009548B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8400636 1984-02-29
NL8400636A NL8400636A (nl) 1984-02-29 1984-02-29 Stroombronschakeling.

Publications (2)

Publication Number Publication Date
KR850006737A true KR850006737A (ko) 1985-10-16
KR920009548B1 KR920009548B1 (ko) 1992-10-19

Family

ID=19843565

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850001245A Expired KR920009548B1 (ko) 1984-02-29 1985-02-27 전류원 장치

Country Status (9)

Country Link
US (1) US4605892A (ko)
EP (1) EP0155039B1 (ko)
JP (1) JPH0682308B2 (ko)
KR (1) KR920009548B1 (ko)
CA (1) CA1210091A (ko)
DE (1) DE3573848D1 (ko)
HK (1) HK86691A (ko)
NL (1) NL8400636A (ko)
SG (1) SG85890G (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2186140B (en) * 1986-01-30 1989-11-01 Plessey Co Plc Current source circuit
US4743833A (en) * 1987-04-03 1988-05-10 Cross Technology, Inc. Voltage regulator
US4882533A (en) * 1987-08-28 1989-11-21 Unitrode Corporation Linear integrated circuit voltage drop generator having a base-10-emitter voltage independent current source therein
GB2217937A (en) * 1988-04-29 1989-11-01 Philips Electronic Associated Current divider circuit
US4864216A (en) * 1989-01-19 1989-09-05 Hewlett-Packard Company Light emitting diode array current power supply
JPH03113613A (ja) * 1989-09-28 1991-05-15 Sumitomo Electric Ind Ltd 広ダイナミックレンジ電流源回路
US4958122A (en) * 1989-12-18 1990-09-18 Motorola, Inc. Current source regulator
JP2001092545A (ja) * 1999-09-24 2001-04-06 Mitsubishi Electric Corp セルフバイアス回路
FR2821443B1 (fr) * 2001-02-26 2003-06-20 St Microelectronics Sa Source de courant apte a fonctionner sous faible tension d'alimentation et a variation de courant avec la tension d'alimentation quasi nulle
US6741119B1 (en) * 2002-08-29 2004-05-25 National Semiconductor Corporation Biasing circuitry for generating bias current insensitive to process, temperature and supply voltage variations

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886435A (en) * 1973-08-03 1975-05-27 Rca Corp V' be 'voltage voltage source temperature compensation network
JPS5922245B2 (ja) * 1975-12-05 1984-05-25 日本電気株式会社 テイデンアツバイアスカイロ
JPS5482647A (en) * 1977-12-14 1979-07-02 Sony Corp Transistor circuit
US4172992A (en) * 1978-07-03 1979-10-30 National Semiconductor Corporation Constant current control circuit
US4443753A (en) * 1981-08-24 1984-04-17 Advanced Micro Devices, Inc. Second order temperature compensated band cap voltage reference
JPS5866129A (ja) * 1981-10-15 1983-04-20 Toshiba Corp 定電流源回路

Also Published As

Publication number Publication date
EP0155039A1 (en) 1985-09-18
JPS60204019A (ja) 1985-10-15
HK86691A (en) 1991-11-08
DE3573848D1 (en) 1989-11-23
KR920009548B1 (ko) 1992-10-19
EP0155039B1 (en) 1989-10-18
SG85890G (en) 1991-01-04
CA1210091A (en) 1986-08-19
US4605892A (en) 1986-08-12
NL8400636A (nl) 1985-09-16
JPH0682308B2 (ja) 1994-10-19

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