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KR850001780Y1 - Driving circuit of power transistor - Google Patents

Driving circuit of power transistor Download PDF

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Publication number
KR850001780Y1
KR850001780Y1 KR2019830009932U KR830009932U KR850001780Y1 KR 850001780 Y1 KR850001780 Y1 KR 850001780Y1 KR 2019830009932 U KR2019830009932 U KR 2019830009932U KR 830009932 U KR830009932 U KR 830009932U KR 850001780 Y1 KR850001780 Y1 KR 850001780Y1
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South Korea
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transistor
base
resistor
power
diode
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KR850004522U (en
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박종진
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삼성전자주식회사
정재은
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)

Abstract

내용 없음.No content.

Description

파워 트랜지스터의 구동회로Driving circuit of power transistor

제1도는 본 고안의 회로도.1 is a circuit diagram of the present invention.

제2도, 제3도는 본 고안의 실시예.2 and 3 is an embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

PC : 포토 커플러 R1∼R6: 저항PC: Photocoupler R 1 to R 6 : Resistance

C0: 콘덴서 D0∼D2: 다이오드C 0 : condenser D 0 ~ D 2 : diode

TR1∼TR3: 트랜지스터 TR4: 파워트랜지스터TR 1 to TR 3 : Transistor TR 4 : Power Transistor

Vcc : 동작전원.Vcc: operating power.

본 고안은 전력용으로 사용되는 파워 트랜지스터를 구동시키기 위한 전자회로에 관한 것이다.The present invention relates to an electronic circuit for driving a power transistor used for power.

주로 안정화 전원회로등에 이용되는 종래의 파워 트랜지스터는 일반적으로 스위칭타임이 느리기 때문에 파워 트랜지스터의 구동시 열저항이 커지고, 회로내에 설치된 트랜지스터를 파괴시키는 경우가 종종 발생하는 등의 단점이 있었다.Conventional power transistors mainly used for stabilizing power supply circuits have a disadvantage in that, since the switching time is generally slow, the thermal resistance increases when the power transistor is driven, and the transistors installed in the circuit are often destroyed.

본 고안은 상기한 단점들을 개선한 것으로써, 파워트랜지스터의 스위칭타임을 빠르게 하기 위해서 파워트랜지스터의 베이스에 서로 교대로 동작하는 트랜지스터를 설치하고 파워 트랜지스터의 턴-오프(turn-off)시 파워트랜지스터의 베이스에 역전류를 흐르게하므로써 트랜지스터간의 단락을 방지하고 트랜지스터와 내부회로를 보호하며 회로의 안정도를 높여주는 파워 트랜지스터의 구동회로를 제공함에 고안의 목적이 있다.The present invention improves the above-mentioned disadvantages, and in order to speed up the switching time of the power transistors, transistors which alternately operate on the base of the power transistors are alternately installed, and the power transistors are turned off when the power transistors are turned off. It is an object of the present invention to provide a driving circuit of a power transistor that prevents short circuit between transistors, protects the transistor and internal circuits, and improves circuit stability by allowing reverse current to flow through the base.

이하 본 고안의 구성 및 작용, 효과를 예시도면에 의거하여 상세히 설명하면 다음과 같다.Hereinafter, the configuration, operation, and effects of the present invention will be described in detail with reference to the accompanying drawings.

본 고안은 전원(Vcc1)에 연결된 포토 커플러(PC)의 컬렉터는 저항(R1)을 통해 트랜지스터(TR1)의 베이스에 연결하고, 전원( Vcc1)은 저항(R2)과 다이오드(D1)를 통해 트랜지스터(TR2)의 베이스에 연결하며, 또한 저항(R2)은 다이오드(D2)를 통해 트랜지스터(TR3)의 컬렉터에 연결하되 다이오드(D2)의 일측은 저항(R3)을 통해 트랜지스터(TR1)의 베이스에 연결하고, 포토 커플러(PC)의 에미터는 저항(R4)을 통해 트랜지스터(TR3)의 베이스에 연결하되 일측이 트랜지스터(TR3)의 베이스에 연결된 저항(R5)의 타측을 트랜지스터(TR2)의 에미터에 연결하며, 트랜지스터(TR3)의 에미터에는 콘덴서(C0)와 다이오드(D0)를 연결해서 그 일측을 트랜지스터(TR4)의 에미터에 연결하고, 트랜지스터(TR2)의 컬렉터는 일측이 트랜지스터(TR1)의 컬렉터에 연결된 저항(R6)과 트랜지스터(TR4)의 베이스에 각각 연결시킨 구조로 되어있다.According to the present invention, the collector of the photo coupler PC connected to the power supply Vcc 1 is connected to the base of the transistor TR 1 through the resistor R 1 , and the power supply Vcc1 is connected to the resistor R 2 and the diode D. 1) and connected to the base of the transistor (TR 2) through, and one side of the resistance (R 2) is a diode (D 2) but connected to the collector of the transistor (TR 3) via a diode (D 2) is the resistance (R 3 ) is connected to the base of the transistor TR 1 , and the emitter of the photo coupler PC is connected to the base of the transistor TR 3 via a resistor R 4 , but one side is connected to the base of the transistor TR 3 . The other side of the connected resistor R 5 is connected to the emitter of the transistor TR 2 , and the emitter of the transistor TR 3 is connected to the capacitor C 0 and the diode D 0 by connecting one side thereof to the transistor TR. 4 ) and the collector of transistor TR 2 has a resistor ( 1 side connected to the collector of transistor TR 1 ). R 6 ) and the base of the transistor TR 4 .

미설명부호 Cnt는 제어부, S1∼S3, S1'∼S'3는 각 구동회로의 입력단, M은 부하를 나타낸다.Reference numeral Cnt denotes a control unit, S 1 to S 3 , S 1 'to S' 3 denote an input terminal of each driving circuit, and M denotes a load.

제1도는 본 고안의 회로도를 나타낸 것으로써, 제어부(Cnt)에서 포토 커플러(PC)의 포토 다이오드로 하이레벨의 신호를 입력시키면 포토 트랜지스터가 턴-온(turn-on)됨에 따라 트랜지스터(TR3)의 베이스에는 저항(R4)(R5)에 의해서 동작전원(Vcc1)이 바이어스전압으로 인가되기 때문에 트랜지스터(TR3)는 턴-온 된다. 따라서 저항(R2)을 통과하는 전류는 주로 다이오드(D2)와 트랜지스터(TR3)로 흐르고 다이오드(D1)쪽으로는 미약한 전류만 흘러서 트랜지스터(TR2)는 턴-오프(turn-off) 상태에 놓여있게 된다. 또한, 트랜지스터(TR3)가 턴-온된 상태에 있으므로 저항(R1)(R3)과 트랜지스터(TR2)로 이어지는 회로가 구성되나 저항(R1) 값은 저항(R3)값보다 훨씬 크게 설정되어 있기 때문에 트랜지스터(TR1)의 베이스에는 로우레벨의 전압이 인가되어서 트랜지스터(TR1)는 턴-온된다. 그러면, 트랜지스터(TR1)의 에미터와 컬렉터 및 저항(R6)을 통해서 파워 트랜지스터(TR4)의 베이스로 전류가 흘러서 파워 트랜지스터(TR4)를 턴-온시킨다. 따라서 내부회로에는 파워 트랜지스터(TR4)를 통해서 전력이 공급된다.FIG. 1 is a circuit diagram of the present invention. When a high level signal is input from the control unit Cnt to the photodiode of the photocoupler PC, the phototransistor is turned on and thus the transistor TR 3 is turned on. The transistor TR 3 is turned on because the operating power supply Vcc 1 is applied as a bias voltage to the base of the resistor R 4 and R 5 . Therefore, the current passing through the resistor R 2 mainly flows to the diode D 2 and the transistor TR 3 , and only a slight current flows toward the diode D 1 so that the transistor TR 2 is turned off. ) Into the state. In addition, since the transistor TR 3 is in the turned-on state, a circuit is formed that leads to the resistors R 1 (R 3 ) and the transistors TR 2 , but the value of the resistor R 1 is much higher than the value of the resistor R 3 . since the zoom is set to be the base of the transistor (TR 1) it is applied with a voltage of low level, and the transistor (TR 1) is turned on. Then, turning the transistor (TR 1) the emitter and collector and a resistor (R 6) a power transistor (TR 4) current flows into the base of the power transistor (TR 4) of the through-turns on. Therefore, power is supplied to the internal circuit through the power transistor TR 4 .

그러나, 포토 커플러(PC)의 발광부인 포토 다이오드에 로우레벨의 신호가 인가되면 포토 트랜지스터가 동작을 하지 않으므로, 트랜지스터(TR3)의 베이스로 전류가 공급되지 못해서 트랜지스터(TR3)는 턴-오프된다.However, when applying a low level signal to the light emitting denied photodiodes of the photo coupler (PC) phototransistor is does not operate, the transistor did not get (TR 3) of no current is supplied to the base transistor (TR 3) is turned off do.

그리하여 저항(R2)을 통해 흐르던 전류는 다이오드(D2)쪽으로 흐르지 않고 다이오드(D1)로 흐르며 이 전류는 트랜지스터(TR2)의 베이스 전류로 공급되어 트랜지스터(TR2)가 턴-온 되기 때문에 트랜지스터(TR2)의 컬렉터전위는 제로레벨에 가깝게 된다. 또한 트랜지스터(TR3)가 턴-오프된 상태이므로 저항(R1)으로 흐르는 하이레벨의 전류는 트랜지스터(TR1)의 베이스로 흘러서 트랜지스터(TR1)를 턴-오프시킨다.Thus, the resistance (R 2) flowing electrical current through the flows to not flow into the diode (D 2) the diode (D 1), the current is supplied to the base current of the transistor (TR 2) the transistor (TR 2) is turned to ON Therefore, the collector potential of the transistor TR 2 is close to zero level. In addition, the transistor (TR 3) is turned on, so the OFF state of the high level current through a resistance (R 1) is flowed into the base of the transistor (TR 1) turns on the transistor (TR 1) - it is turned off.

따라서, 파워 트랜지스터(TR4)의 베이스전위는 제로레벨에 가까운 트랜지스터(TR2)의 컬렉터전위와 같게 되어서 파워 트랜지스터(TR4)는 턴-오프된다.Therefore, being equal to the collector potential of the power transistor (TR 4) close to the transistor (TR 2) to the base potential is the zero level of the power transistor (TR 4) is turned off.

위와 같이 트랜지스터(TR1)와 트랜지스터(TR2)는 서로 상보관계에 놓여 있으므로 파워트랜지스터(TR4)의 스위칭타임을 단축시키게 되고, 다이오드(D0)와 콘덴서(C0)는 파워 트랜지스터(TR4)의 베이스와 에미터사이에 역바이어스전위를 형성하므로 파워 트랜지스터(TR4)가 턴-오프되었을때 파워 트랜지스터(TR4)의 베이스에 충분한 역전류를 공급하게 되어서 파워 트랜지스터(TR4)의 스위칭손실을 절감시키게 된다.As described above, since the transistor TR 1 and the transistor TR 2 are in a complementary relationship, the switching time of the power transistor TR 4 is shortened, and the diode D 0 and the capacitor C 0 are the power transistor TR. Since a reverse bias potential is formed between the base and the emitter 4 ), when the power transistor TR 4 is turned off, sufficient reverse current is supplied to the base of the power transistor TR 4 so that the power transistor TR 4 The switching loss is reduced.

제2도는 본 고안에 따른 일실시예로써 3상 파워 트랜지스터 인버터를 나타낸다.Figure 2 shows a three-phase power transistor inverter as an embodiment according to the present invention.

제3도는 제2도의 3상 파워 트랜지스터 인버터를 동작시키기 위한 베이스 구동회로를 나타내는데 이는 제1도의 구동회로를 6개 사용한 것이다.FIG. 3 shows a base drive circuit for operating the three-phase power transistor inverter of FIG. 2, which uses six drive circuits of FIG.

제어부(Cnt)에서는 제3도에 도시한 구동회로의 각 입력단(S1)(S2)(S3)에 위상이 120°씩 늦는 신호를 각각 입력시키고, 또한 입력단(S1)과 입력단(S'1), 입력단(S'2)과 입력단(S'2), 입려단(S'3)과 입력단(S'3)에는 180°의 위상차를 갖는 신호가 각각 입력된다.The control unit Cnt inputs a signal having a phase delay of 120 ° to each of the input terminals S 1 , S 2 , and S 3 of the driving circuit shown in FIG. 3 , and also inputs the input terminal S 1 and the input terminal ( S '1), the input terminal (S' 2) and an input terminal (S '2), the mouth ryeodan (S' 3) and the input terminal (S '3) are input respectively, a signal having a phase difference of 180 °.

그러면, 각각의 구동회로는 전술한 바와 같은 동작을 하여서 각각의 트랜지스터(Q1)(Q2)(Q3)는 120°의 위상차이를 두고 교대로 턴-온되는데 이에 따라 부하(M)에는 120°의 위상 차이를 갖는 교류가 공급되는 것이다.Then, each driving circuit operates as described above, so that each of the transistors Q 1 , Q 2 , and Q 3 is alternately turned on with a phase difference of 120 °, so that the load M Alternating current having a phase difference of 120 ° is supplied.

상기한 바와 같이 본 고안은 파워 트랜지스터의 턴-오프타임을 빠르게 하므로써 트랜지스터간의 단락을 방지하여 트랜지스터가 파괴되는 것을 방지하고, 트랜지스터의 스위칭손실을 줄일 수 있으며, 또한 내부회로가 보호됨으로 인해서 안정도가 증가되는 장점이 있다.As described above, the present invention speeds up the turn-off time of a power transistor, thereby preventing a short circuit between transistors, thereby preventing the transistor from being destroyed, reducing the switching loss of the transistor, and increasing stability due to the protection of the internal circuit. It has the advantage of being.

Claims (1)

전원(Vcc)에 연결된 포포 커플러(PC)의 컬렉터는 저항(R1)을 통해 트랜지스터(TR1)의 베이스에 연결하고, 전원(Vcc1)은 저항(R2)과 다이오드(D1)를 통해 트랜지스터(TR2)의 베이스에 연결하며, 또한 저항(R2)은 다이오드(D2)를 통해 트랜지스터(TR3)의 컬렉터에 연결하되 다이오드(D2)의 일측은 저항(R3)을 통해 트랜지스터(TR1)의 베이스에 연결하고, 포토 커플러(PC)의 에미터는 저항(R4)을 통해 트랜지스터(TR3)의 베이스에 연결하되 일측이 트랜지스터(TR3)의 베이스에 연결된 저항(R5)의 타측을 트랜지스터(TR2)(TR3)의 에미터에 연결하며, 트랜지스터(TR2)의 에미터에는 콘덴서(C0)와 다이오드(D0)를 연결해서 그 일측을 트랜지스터(TR4)의 에미터에 연결하고, 트랜지스터(TR2)의 컬렉터는 일측이 트랜지스터(TR1)의 컬렉터에 연결된 저항(R6)과 트랜지스터(TR4)의 베이스에 각각연결시켜서 된 파워 트랜지스터의 구동회로.The collector of the popup coupler PC connected to the power supply Vcc is connected to the base of the transistor TR 1 via a resistor R 1 , and the power supply Vcc1 is connected via a resistor R 2 and a diode D 1 . connected to the base of the transistor (TR 2), and also one end of the resistor (R 2) is a diode (D 2) but connected to the collector of the transistor (TR 3) via a diode (D 2) is via a resistor (R 3) Is connected to the base of the transistor TR 1 , and the emitter of the photo coupler PC is connected to the base of the transistor TR 3 through a resistor R 4 , but one side of the resistor R is connected to the base of the transistor TR 3 . 5 ) The other side of the transistor (TR 2 ) (TR 3 ) is connected to the emitter of the transistor (TR 2 ), the emitter of the transistor (TR 2 ) is connected to the capacitor (C 0 ) and diode (D 0 ) one side of the transistor (TR) connected to the emitter of 4), and the transistor (TR 2) the collector side of the transistors (resistor connected to the collector of TR 1) (R 6) and Transistors in the drive circuit of the power transistor by, respectively connected to the base of (TR 4).
KR2019830009932U 1983-11-24 1983-11-24 Driving circuit of power transistor Expired KR850001780Y1 (en)

Priority Applications (1)

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KR2019830009932U KR850001780Y1 (en) 1983-11-24 1983-11-24 Driving circuit of power transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019830009932U KR850001780Y1 (en) 1983-11-24 1983-11-24 Driving circuit of power transistor

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KR850004522U KR850004522U (en) 1985-07-22
KR850001780Y1 true KR850001780Y1 (en) 1985-08-19

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KR2019830009932U Expired KR850001780Y1 (en) 1983-11-24 1983-11-24 Driving circuit of power transistor

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KR850004522U (en) 1985-07-22

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