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KR840004825A - Broadband Gap p Amorphous Silicon Alloy with Oxygen and Devices Using the Same - Google Patents

Broadband Gap p Amorphous Silicon Alloy with Oxygen and Devices Using the Same Download PDF

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KR840004825A
KR840004825A KR1019830001784A KR830001784A KR840004825A KR 840004825 A KR840004825 A KR 840004825A KR 1019830001784 A KR1019830001784 A KR 1019830001784A KR 830001784 A KR830001784 A KR 830001784A KR 840004825 A KR840004825 A KR 840004825A
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alloy
band gap
oxygen
state density
amorphous silicon
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카넬라 빈센트
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원본미기재
에너지 컨버전 디바이시즈, 아이 엔 시
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

내용 없음No content

Description

산소를 갖는 광대역 갭 p 비결정 실리콘 합금 및 이를 이용한 소자Broadband Gap p Amorphous Silicon Alloy with Oxygen and Devices Using the Same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 광전 소자를 만들기 위하여 본 발명의 방법을 실시하는데 이용되는 글로우 방전 용착 장치의 개략도.1 is a schematic diagram of a glow discharge welding apparatus used to implement the method of the present invention to make the photoelectric device of the present invention.

제2도는 제1도의 선 2―2를 따라 취해진 제1도의 장치의 일부에 대한 단면도.FIG. 2 is a cross-sectional view of a portion of the apparatus of FIG. 1 taken along line 2-2 of FIG.

제4도는 본 발명의 p―i―n광전 소자의 단면도.4 is a cross-sectional view of a p-i-n photoelectric device of the present invention.

Claims (47)

기질상에 최소한 실리콘을 포함하는 재료를 용착하고, 그 재료에 최소한 하나의 상태 밀도 감소 원소와 P―형 도우펀트를 사용하고, 대역 갭 증가 원소를 도입하는 개선된 광 대역 갭 P 비결정 실리콘 해금 제조 방법에 있어서, 상기 대역 갭 증가 원소가 산소로 되어 산소를 1―30%의 범위로 포함하는 P―형 비결정 실리콘 합금을 만들어내는 것을 특징으로 하는 방법.Fabrication of an improved broad bandgap P amorphous silicon anneal that deposits at least a silicon-containing material on a substrate, employs at least one state density reducing element and a P-type dopant in the material, and introduces a bandgap increasing element. The method according to claim 1, wherein the band gap increasing element becomes oxygen to produce a P-type amorphous silicon alloy containing oxygen in the range of 1-30%. 제1항에 있어서, 상기 최소한 하나의 상태 밀도 감소 원소는 수소인 것을 특징으로 하는 방법.The method of claim 1 wherein the at least one state density reducing element is hydrogen. 제1항에 있어서, 상기 최소한 하나의 상태 밀도 감소 원소는 불소인 것을 특징으로 하는 방법.The method of claim 1 wherein said at least one state density reducing element is fluorine. 제3항에 있어서, 제2의 상태 밀도 감소 원소를 도입하고, 그 원소가 수소인 것을 또한 특징으로 하는 방법.4. A method according to claim 3, wherein a second state density reducing element is introduced and the element is hydrogen. 제4항에 있어서, 상기 두 상태 밀도 감소 원소 모두가 산소와 거의 동시에 상기 용착된 합금에 사용되는 것을 또한 특징으로 하는 방법.5. The method of claim 4, wherein both state density reducing elements are used in the deposited alloy at about the same time as oxygen. 제1항에서 제5항까지의 어느 한 항에 있어서, 상기 P―형 도우펀드가 불소인 것을 또한 특징으로 하는 방법.The method of claim 1, wherein the P-type dopant is also fluorine. 제1항에서 제6항 까지의 어느 한 항에 있어서, 상기 합금이 최소한 SiH4B2H6및 산소의 혼합물로 부터 글로우 방전 용착되어지는 것을 또한 특징으로 하는 방법.The method according to claim 1, wherein the alloy is glow discharged from at least a mixture of SiH 4 B 2 H 6 and oxygen. 제7항에 있어서, 상기 혼합물에서 산소의 농도는 0.01―1%의 범위내인 것을 또한 특징으로 하는 방법.8. The method of claim 7, wherein the concentration of oxygen in the mixture is further in the range of 0.01-1%. 제8항에 있어서, 상기 산소는 상기 혼합물 내에서 아르곤 가스로 희석되는 것을 또한 특징으로 하는 방법.9. The method of claim 8, wherein the oxygen is further diluted with argon gas in the mixture. 제7항에서 제9항 까지의 어느 한 항에 있어서, 상기 혼합물이 94.6%의 SiH4, 대략 5.2%의 B2H6및 대략 0.2%의 산소를 포함하는 방법.The method of claim 7, wherein the mixture comprises 94.6% SiH 4 , approximately 5.2% B 2 H 6 and approximately 0.2% oxygen. 제1항에서 제6항까지의 어느 한 항에 있어서, 상기 합금이 최소한 SiF4, SiH4, B2H6및 산소의 혼합물로 부터 글로우 방전용착되는 것을 또한 특징으로 하는 방법.The method according to claim 1, wherein the alloy is also glow discharge welded from a mixture of at least SiF 4 , SiH 4 , B 2 H 6 and oxygen. 제11항에 있어서, 상기 혼합물에서 산소의 농도가 0.01―1%범위내인 것을 또한 특징으로 하는 방법.12. The method of claim 11, wherein the concentration of oxygen in the mixture is in the range of 0.01-1%. 제12항에 있어서, 상기 산소가 상기 혼합물에서 아르곤가스로 희석되어지는 것을 또한 특징으로 하는 방법.13. The method of claim 12, wherein said oxygen is diluted with argon gas in said mixture. 제1항에서 제13항가지의 어느 한 항에 있어서, 상기 산소의 사용량에 비해 작은량의 제2대역 갭 증가 원소를 사용하고, 그 제2 대역 갭 증가 원소가 탄소인 것을 또한 특징으로 하는 방법.The method according to any one of claims 1 to 13, further comprising using a small amount of the second band gap increasing element relative to the amount of oxygen used, and wherein the second band gap increasing element is carbon. . 제1항에 따른 방법으로 만들어지는 것을 특징으로하는 비결정 합금.An amorphous alloy made by the method according to claim 1. 제2항에 따른 방법으로 만들어지는 것을 특징으로하는 비결정 합금.An amorphous alloy made by the method according to claim 2. 제3항에 따른 방법으로 만들어지는 것을 특징으로하는 비결정 합금.Amorphous alloy made by the method according to claim 3. 제4항에 따른 방법으로 만들어지는 것을 특징으로하는 비결정 합금.An amorphous alloy made by the method according to claim 4. 제5항에 따른 방법으로 만들어지는 것을 특징으로하는 비결정 합금.Amorphous alloy made by the method according to claim 5. 제14항에 따른 방법으로 만들어지는 것을 특징으로하는 비결정 합금.An amorphous alloy made by the method according to claim 14. 실리콘을 포함하고 최소한 하나의 상태 밀도 감소 원소와 P―형 도우펀트를 사용하는 개선된 광대역 갭 P 비결정 실리콘 합금에 있어서, 그 개선점은 상기 합금이 그안에 최소한 하나의대역 갭 증가 원소를 사용하고, 그 원소가 산소이며, 사기 합금이 산소를 1―30%의 범위내로 포함하는 것이 특징인 합금.In an improved broadband gap P amorphous silicon alloy comprising silicon and using at least one state density reducing element and a P-type dopant, the improvement is that the alloy uses at least one band gap increasing element therein, The alloy is characterized in that the element is oxygen, and the fructose alloy contains oxygen in the range of 1-30%. 제21항에 있어서, 상기 최소한 하나의 상태 밀도 감소원소가 수소인 것이 또한 특정한 합금.22. The alloy of claim 21, wherein the at least one state density reducing element is hydrogen. 제21항에 있어서, 상기 최소한 하나의 상태 밀도 감소원소가 불소인 것이 또한 특정한 합금.22. The alloy of claim 21, wherein the at least one state density reducing element is fluorine. 제23항에 있어서, 사용되는 또 하나의 상태 밀도 감소원소가 사용되고, 그 원소가 수소인 것이 또한 특정한 합금.24. The alloy of claim 23, wherein another state density reducing element used is used and the element is hydrogen. 제21항에서 제24항까지의 어느 한 항에 있어서, 상기 P―형 도우펀트가 불소인 것이 특징인 합금.The alloy according to any of claims 21 to 24, wherein the P-type dopant is fluorine. 제21항에서 제25항까지의 어느 한 항에 있어서, 산소의 농도에 비해 또 하나의 대역 갭 증가 원소가 농도가 낮으며, 그 원소가 탄소인 것이 특징인 합금.The alloy according to any one of claims 21 to 25, wherein another zone gap increasing element has a lower concentration than that of oxygen, and the element is carbon. 방사선이 출돌하여 전하 캐리어를 생성하는 순수한 활성광감응성 층을 형성하는 비결정 반도체 합금체를 포함하는 기질상에 용착되는 여러 재료의 중첨된 층을 포함하는 광감응성 소자에 있어서, 상기 순수층에 인접한 광 대역 갭 P 비결정 실리콘 합금층이 최소한 하나의 상태 밀도 감소 원소, P―형 도우펀트, 및 최소한 하나의 대역 갭 증가 원소를 포함하고, 상기 대역 갭 증가 원소는 산소이며, 상기 광 대역 갭 비결정 실리콘 합금이 상기 산소를 1―30%의 범위내로 포함하는 것을 특징으로 하는 개선된 소자.A photosensitive device comprising a superimposed layer of various materials deposited onto a substrate comprising an amorphous semiconductor alloy body in which radiation is incident to form a pure active photosensitive layer that generates charge carriers, the light adjacent to the pure layer. The band gap P amorphous silicon alloy layer includes at least one state density reducing element, a P-type dopant, and at least one band gap increasing element, the band gap increasing element is oxygen, and the wide band gap amorphous silicon alloy An improved device comprising this oxygen in the range of 1-30%. 제27항에 있어서, n―형 비결정 실리콘 합금층이 상기 순수층에 상기 광 대역 밴드 갭 P 비결정 실리콘 합금층의 반대측으로 인접해 있는 것을 특징으로 하는 소자.28. The device of claim 27, wherein an n-type amorphous silicon alloy layer is adjacent to the pure layer opposite to the wide band band gap P amorphous silicon alloy layer. 제28항에 있어서, 이면 반사층이 상기 기질에 인접하고 상기 기질과 상기 비결정 실리콘 합금층의 하나와의 사이에 놓이는 것을 또한 특징으로 하는 소자.29. The device of claim 28, wherein a back reflective layer is adjacent to the substrate and lies between the substrate and one of the amorphous silicon alloy layers. 제27항에서 제29항까지의 어느 한 항에 있어서, 상기 상태 밀도 감소 원소가 수소인 것을 또한 특징으로 하는 소자.The device according to any one of claims 27 to 29, wherein the state density reducing element is hydrogen. 제27항에서 제29항까지의 어느 한 항에 있어서, 상기 상태 밀도 감소 원소가 불소인 것을 또한 특징으로 하는 소자.The device according to any one of claims 27 to 29, wherein the state density reducing element is fluorine. 제31항에 있어서, 상기 광 대역 갭 P 비결정 실리콘 합금층이 또 하나의 상태 밀도 감소 원소를 포함하며, 그 원소가 수소인 것을 또한 특징으로 하는 소자.32. The device of claim 31, wherein the wide band gap P amorphous silicon alloy layer comprises another state density reducing element, wherein the element is hydrogen. 제27항에서 제32항 까지의 어느 한 항에 있어서, 상기 P―형 도우펀트가 불소인 것을 또한 특정으로 하는 소자.33. A device in accordance with any one of claims 27 to 32 wherein the P-type dopant is also fluorine. 제27항에서 제33항 까지의 어느 한 항에 있어서, 상기 광 대역 갭 P 비결정 실리콘 합금층이 또 하나의 대역 갭 증가 원소를 상기 산소의 농도에 비해 작은 농도로 포함하고, 그 원소가 탄소인 것을 특징으로 하는 소자.34. The method according to any one of claims 27 to 33, wherein the wide band gap P amorphous silicon alloy layer contains another band gap increasing element at a smaller concentration than the concentration of oxygen, and the element is carbon. Device characterized in that. 기질상에 용착되는 비결정 반도체 합금이 복수 층들로 형성되는 다중 셀 광전 소자에 있어서, 직렬로 배열되는 다수의 단일셀 유니트로 구성되고, 그 단일 셀각각은 제1의 도우핑된 비결정 반도체 합금층, 그 제1의 도우핑된 층에 용착되는 순수 비결정 반도체 합금체, 상기 순수 합금체에 용착되며, 상기 제1의 도우핑된 비결정 반도체 합금층에 대한 반대 도전성인 또 하나의 도우핑된 비결정 반도체 합금층을 포함하고, 상기 단일 셀 유니트들 중의 최소한 하나의 상기 도우핑된 비결정 반도체 합금층들 중 최소한 하나는 최소한 하나의 상태 밀도 감소 원소, P―형 도우펀트, 및 최소한 하나의 대역 갭 증가 원소를 포함하며, 그 대역 갭 증가 원소는 산소로 되고, 상기 광 대역 갭 P 비결정 실리콘 합금이 상기 산소를 1―30%의 범위로 포함하는 것을 특징으로 하는 다중셀 광전소자.A multi-cell photovoltaic device in which an amorphous semiconductor alloy deposited on a substrate is formed of a plurality of layers, comprising a plurality of single cell units arranged in series, each single cell comprising a first doped amorphous semiconductor alloy layer, A pure amorphous semiconductor alloy deposited on the first doped layer, another doped amorphous semiconductor alloy deposited on the pure alloy and opposite in conductivity to the first doped amorphous semiconductor alloy layer At least one of the doped amorphous semiconductor alloy layers of at least one of the single cell units comprises at least one state density reducing element, a P-type dopant, and at least one band gap increasing element. Wherein the band gap increasing element is oxygen, and the wide band gap P amorphous silicon alloy includes the oxygen in the range of 1-30%. Multi-cell photoelectric device. 제35항에 있어서, 상기 광대 역 갭 P 비결정 실리콘 합금은 또 하나의 대역 갭 증가 원소를 상기 산소의 농도에 비해 작은 농도로 포함하고, 그 또 하나의 대역 갭 증가 원소가 탄소인 것을 특징으로 하는 소자.36. The method of claim 35, wherein the wide-gap P amorphous silicon alloy includes another band gap increasing element at a smaller concentration than the concentration of oxygen, and the another band gap increasing element is carbon. device. 제35항 또는 제36항 중의 어느 한 항에 있어서, 상기 상태 밀도 감소 원소가 수소인 것을 또한 특징으로 하는 소자.37. An element according to any one of claims 35 to 36, wherein said state density reducing element is hydrogen. 제35항 또는 제36항 중의 어느 한 항에 있어서, 상기 상태 밀도 감소 원소가 불소인 것을 또한 특징으로 하는 소자.37. An element according to any one of claims 35 to 36, wherein said state density reducing element is fluorine. 제38항에 있어서, 상기 광 대역 갭 P 비결정 실리콘 합금이 또 하나의 상태 밀도 감소 원소를 포함하고, 그 원소가 수소인 것을 또한 특징으로 하는 소자.39. The device of claim 38, wherein the wide band gap P amorphous silicon alloy comprises another state density reducing element, wherein the element is hydrogen. 제35항에서 제39항 까지의 어느 한 항에 있어서, 상기 기질에 바로 인접한 이면 반사층을 또한 특징으로 하는 소자.40. The device of any one of claims 35 to 39, further comprising a back reflective layer immediately adjacent the substrate. 제40항에 있어서, 상기 광 대역 갭 P 비결정 실리콘 합금층이 상기 이면 반사층의 상기 기질에 반대편 측데 인접해 있는 것을 또한 특징으로 하는 소자.41. The device of claim 40, wherein the wide band gap P amorphous silicon alloy layer is adjacent to the opposite side of the substrate of the back reflective layer. 제40항에 있어서, 상기 광 대역 갭 P 비결정 실리콘 합금층이 상기 기질에 대한 최상부의 비결정 반도체 합금층을 형성하는 것을 또한 특징으로 하는 소자.41. The device of claim 40, wherein the wide band gap P amorphous silicon alloy layer forms a top amorphous semiconductor alloy layer for the substrate. 제35항에서 제42항까지의 어느 한 항에 있어서, 상기 순수 합금체 각각은 대역 갭을 가지며 그 순수 합금체 중의 최소한 하나는 특정한 광 감응 파장 특성에 대해 조절된 대역 갭을 갖는 것을 또한 특징으로 하는 소자.43. The method of any one of claims 35 to 42, wherein each of the pure alloys has a band gap and at least one of the pure alloys has a band gap adjusted for a particular light sensitive wavelength characteristic. Element. 제43항에 있어서, 상기 최소한 하나의 순수 합금체는 감소된 대역 갭을 갖는 것을 또한 특징으로 하는 소자.44. The device of claim 43, wherein said at least one pure alloy has a reduced band gap. 제44항에 있어서, 상기 최소한 하나의 순수 합금체는 게르마늄, 주석 또는 납의 그룹에서 선정된 최소한 하나의 대역 갭 감소 원소를 포함하는 것을 또한 특징으로 하는 소자.45. The device of claim 44, wherein the at least one pure alloy comprises at least one band gap reducing element selected from the group of germanium, tin or lead. 제43항에 있어서, 상기 최소한 하나의 순수 합금체는 증가된 대역 갭을 갖는 것을 또한 특징으로 하는 소자.The device of claim 43, wherein the at least one pure alloy has an increased band gap. 제46항에 있어서, 상기 최소한 하나의 순수 합금체는 탄소와 질소의 그룹에서 선정된 최소한 하나의 대역 갭 증가 원소를 포함하는 것을 또한 특징으로 하는 소자.The device of claim 46, wherein the at least one pure alloy comprises at least one band gap increasing element selected from the group of carbon and nitrogen. ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the initial application.
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