KR840003629A - 피라졸술포닐우레아 유도체의 제조방법과 이를 함유하는 제초체 조성물 및 본 제초체에 의한 초목의 구제(驅除)방법 - Google Patents
피라졸술포닐우레아 유도체의 제조방법과 이를 함유하는 제초체 조성물 및 본 제초체에 의한 초목의 구제(驅除)방법 Download PDFInfo
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- C07D231/14—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
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Abstract
Description
Claims (36)
- 다음 일반식(Ⅳ)로 표시되는 피라졸술포닐 이소시아네이트와 일반식(Ⅴ)로 표시되는 화합물과 반응시킴을 특징으로 하는, 다음 일반식(Ⅰ)로 표시되는 화합물의 합성법.
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- 상기식에서, A:수소원자, C1∼C8알킬기 또는 페닐기, B,C: 독립하여 각각 수소원자, 할로겐원자, 니트로기, C1∼C8알킬기, 아릴알킬기(aryl alkyl), C1∼C8알콕시기, 할로겐화알킬기, -CO2R(R은 수소원자, C1∼C8알킬기, 아릴기 또는 푸로파르길이를 나타낸다), -CONR1R2(R1은 수소원자, C1∼C8알킬기 또는 페닐기를 나타내고, R2는 수소원자 또는 C1∼C8알킬기를 나타내지만, 혹은 R1, R2가 함께 -(CH2)m-, -CH2CH2OCH2CH2- 또는 -CH2CH2N(CH3)CH2CH2를 나타낸다. 단, m은 4.5 또는 6을 나타낸다), -S(0n)R3(R3는 C1∼C8알킬기, 페닐기 또는 아릴알킬기를 나타내고, n은 0.1 또는 2를 나타낸다), -SO2NR4R5(R4는 C1∼C8알킬기를 나타내고, R5는 수소원자 또는 C1∼C8알킬기를 나타내든가 또는 R4,R5가 함께 -(CH2)P-, -CH2CH2OCH2CH2- 또는 -CH2CH2N(CH3)CH2CH2-를 나타낸다. 단, P는 4,5 또는 6을 나타낸다, 또는 C1∼C8알킬기, 할로겐원자 또는 니트로기로 치환되어도 좋은 페닐기.
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- 상기식에서, D:수소원자 또는 C1∼C8알킬기, X,Y: 독립하여 각각 수소원자, 할로겐원자, C1∼C8알킬기, C1∼C8알콕시기, C1∼C8알콕시알킬기, -CF3기, C1∼C8할로알콕시기, 알킬아미노기, 디알킬아미노기 또는(R6,R7은 각각 수소원자 또는 C1∼C8알킬기를 나타낸다)를 나타내거나, 또는 X나 Y의 어느 것이 Z와 함께 산소원자를 포함하는 5원환구조를 형성하여도 좋다.
- Z:질소원자 또는 C-R8(R8은 수소원자, 할로켄화알킬기 또는 X나 Y의 어느 것과 함께 산소원자를 포함하는 5원환 구조를 형성한다.
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- 상기식에서, A:수소원자, C1∼C8알킬기 또는 페닐기, B,C: 독립하여 각각 수소원자, 할로겐원자, 니트로기, C1∼C8알킬기, 아릴알킬기(aryl alkyl), C1∼C8알콕시기, 할로겐화알킬기, -CO2R(R은 수소원자, C1∼C8알킬기, 아릴기 또는 푸로파르길이를 나타낸다), -CONR1R2(R1은 수소원자, C1∼C8알킬기 또는 페닐기를 나타내고, R2는 수소원자 또는 C1∼C8알킬기를 나타내지만, 또는 R1, R2가 함께 -(CH2)m-, -CH2CH2OCH2CH2- 또는 -CH2CH2N(CH3)CH2CH2를 나타낸다. 단, m은 4,5 또는 6을 나타낸다), -S(0n)R3(R3는 C1∼C8알킬기, 페닐기 또는 아릴알킬기를 나타내고, n은 0.1 또는 2를 나타낸다), -SO2NR4R5(R4는 C1∼C8알킬기를 나타내고, R5는 수소원자 또는 C1∼C8알킬기를 나타내든가 또는 R4,R5가 함께 -(CH2)P-, -CH2CH2OCH2CH2- 또는 -CH2CH2N(CH3)CH2CH2-를 나타낸다. 단, P는 4,5 또는 6을 나타낸다), 또는 C1∼C8알킬기, 할로겐원자 또는 니트로기로 치환되어도 좋은 페닐기.
- D : 수소원자, C1∼C8알킬기 또는 알킬기,
- X,Y : 독립적으로 각각 수소원자, 할로겐원자, C1∼C8알킬기, C1∼C8알콕시기, C1∼C8알콕시알킬기, -CF3기, C1∼C8할로알콕시기, 알킬아미노기, 디알킬아미노기 또는(R6,R7은 각각 수소원자 또는 C1∼C8알킬기를 나타낸다)을 나타내고, 혹은 X나 Y의 어느 쪽이 Z와 함께 산소원자를 함유하는 5원환구조를 형성)이다.
- Z : 질소원자 또는 C-R8(R8은 수소원자, 할로켄화알킬기 또는 X나 Y의 어느 것과 함께 산소원자를 포함하는 5원환 구조를 형성)이다.
- 다음 일반식(Ⅶ)로 표시되는 N-피라졸술포닐카아바메이트와, 다음 일반식(Ⅴ)로 되어 있는 화합물과를 반응시킴을 특징으로 하는 다음 일반식(Ⅰ)로 표시되는 화합물의 합성법.
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- 상기식에서, A:수소원자, C1∼C8알킬기 또는 페닐기, B,C: 독립적으로 각각 수소원자, 할로겐원자, 니트로기, C1∼C8알킬기, 아릴알킬기(aryl alkyl), C1∼C8알콕시기, 할로겐화알킬기, -CO2R(R은 수소원자, C1∼C8알킬기, 아릴기 또는 푸로파르길기를 나타낸다), -CONR1R2(R1은 수소원자, C1∼C8알킬기 또는 페닐기를 나타내고, R2는 수소원자 또는 C1∼C8알킬기를 나타내지만, 또는 R1, R2가 함께 -(CH2)m-, -CH2CH2OCH2CH2- 또는 -CH2CH2N(CH3)CH2CH2를 나타내고, 단, m은 4,5 또는 6을 나타낸다), -S(0n)R3(R3는 C1∼C8알킬기, 페닐기 또는 아릴알킬기를 나타내고, n은 0.1 또는 2를 나타낸다), -SO2NR4R5(R4는 C1∼C8알킬기를 나타내고, R5는 수소원자 또는 C1∼C8알킬기를 나타내든가 또는 R4,R5가 함께 -(CH2)P-, -CH2CH2OCH2CH2- 또는 -CH2CH2N(CH3)CH2CH2-를 나타낸다. 단, P는 4,5 또는 6을 나타낸다), 또는 C1∼C8알킬기, 할로겐원자 또는 니트로기로 치환되어도 적당한 페닐기.
- R9: 알킬기 또는 페닐기이다.
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- 상기 식에서,D : 수소원자, C1∼C8알킬기 또는 알킬기, X,Y : 독립적으로 각각 수소원자, 할로겐원자, C1∼C8알킬기, C1∼C8알콕시기, C1∼C8알콕시알킬기, -CF3기, C1∼C8할로알콕시기, 알킬아미노기, 디알킬아미노기 또는(R6,R7은 각각 수소원자 또는 C1∼C8알킬기를 나타낸다)을 나타내고, 또는 X나 Y의 어느 것이 Z와 함께 산소원자를 포함하는 5원환구조를 형성하여도 적당하다).
- Z : 질소원자 또는 C-R8(R8은 수소원자, 할로겐화알킬기 또는 X나 Y의 어느 것과 함께 산소원자를 포함하는 5원환 구조를 형성한다.
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- 상기식에서, A : 수소원자, C1∼C8알킬기 또는 페닐기, B,C : 독립적으로 각각 수소원자, 할로겐원자, 니트로기, C1∼C8알킬기, 아릴알킬기(aryl alkyl), C1∼C8알콕시기, 할로겐화알킬기, -CO2R(R은 수소원자, C1∼C8알킬기, 아릴기 또는 푸로파르길기를 나타낸다), -CONR1R2(R1은 수소원자, C1∼C8알킬기 또는 페닐기를 나타내고, R2는 수소원자 또는 C1∼C8알킬기를 나타내지만, 또는 R1, R2가 함께 -(CH2)m-, -CH2CH2OCH2CH2- 또는 -CH2CH2N(CH3)CH2CH2를 나타내고, 단, m은 4,5 또는 6을 나타낸다), -S(0n)R3(R3는 C1∼C8알킬기, 페닐기 또는 아릴알킬기를 나타내고, n은 0.1 또는 2를 나타낸다), -SO2NR4R5(R4는 C1∼C8알킬기를 나타내고, R5는 수소원자 또는 C1∼C8알킬기를 나타내지만, 혹은 R4,R6가 함께 -(CH2)P-, -CH2CH2OCH2CH2- 또는 -CH2CH2N(CH3)CH2CH2-를 나타낸다. 단, P는 4,5 또는 6을 나타낸다), 또는 C1∼C8알킬기, 할로겐원자 또는 니트로기로 치환되어도 적당한 페닐기.
- D : 수소원자, C1∼C8알킬기 또는 페닐기, X,Y : 독립적으로 각각 수소원자, 할로겐원자, C1∼C8알킬기, C1∼C8알콕시기, C1∼C8알콕시알킬기, -CF3기, C1∼C8할로알콕시기, 알킬아미노기, 디알킬아미노기 또는(R6,R7은 각각 수소원자 또는 C1∼C8알킬기를 나타낸다)을 나타내거나, 또는 X나 Y의 어느 것이 Z와 함께 산소원자를 포함하는 5원환구조를 형성하여도 적당하다.)
- Z:질소원자 또는 C-R8(R8은 수소원자, 할로겐화알킬기 또는 X나 Y의 어느 것과 함께 산소원자를 포함하는 5원환 구조를 형성한다)이다.
- 다음 일반식(Ⅵ)으로 표시되는 피라졸술폰아미드와 일반식(Ⅹ)으로 표시되는 이소시아네이트를 반응시킴을 특징으로 하는, 다음 일반식(Ⅸ)로 표시되는 화합물의 합성법.
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- A : 수소원자, C1∼C8알킬기 또는 페닐기, B,C : 독립하여 각각 수소원자, 할로겐원자, 니트로기, C1∼C8알킬기, 아릴알킬기(aryl alkyl), C1∼C8알콕시기, 할로겐화알킬기, -CO2R(R은 수소원자, C1∼C8알킬기, 아릴기 또는 푸로파르길이를 나타낸다), -CONR1R2(R1은 수소원자, C1∼C8알킬기 또는 페닐기를 나타내고, R2는 수소원자 또는 C1∼C8알킬기를 나타내든가, 또는 R1, R2가 함께 -(CH2)m-, -CH2CH2OCH2CH2- 또는 -CH2CH2N(CH3)CH2CH2를 나타낸다. 단, m은 4,5 또는 6을 나타낸다), -S(0n)R3(R3는 C1∼C8알킬기, 페닐기 또는 아릴알킬기를 나타내고, n은 0.1 또는 2를 나타낸다), -SO2NR4R5(R4는 C1∼C8알킬기를 나타내고, R5는 수소원자 또는 C1∼C8알킬기를 나타내지만, 또는 R4,R5가 함께 -(CH2)P-, -CH2CH2OCH2CH2- 또는 -CH2CH2N(CH3)CH2CH2-를 나타내고 단, p는 4,5 또는 6을 나타낸다), 또는 C1∼C8알킬기, 할로겐원자, 또는 니트로기로 치환되어도 적당한 페닐기.
-
- 상기식에서, E : 할로겐원자, G : H, Cl, Br, C1∼C4알킬, -CF3, 메톡시메틸 또는 메톡시에틸. Z : 질소원자 또는 C-R8(R8은 수소원자, 할로겐화알킬기 또는 X나 Y의 어느 것과 함께 산소원자를 포함하는 5원환 구조를 형성한다.
-
- 상기식에서, A : 수소원자, C1∼C8알킬기 또는 페닐기,
- B,C : 독립적으로 각각 수소원자, 할로겐원자, 니트로기, C1∼C8알킬기, 아릴알킬기(aryl alkyl), C1∼C8알콕시기, 할로겐화알킬기, -CO2R(R은 수소원자, C1∼C8알킬기, 알릴기 또는 푸로파르길기를 나타낸다), -CONR1R2(R1은 수소원자, C1∼C8알킬기 또는 페닐기를 나타내고, R2는 수소원자 또는 C1∼C8알킬기를 나타내든가, 또는 R1, R2가 함께 -(CH2)m-, -CH2CH2OCH2CH2- 또는 -CH2N(CH3)CH2CH2를 나타내며, 단, m은 4,5 또는 6을 나타낸다), -S(0n)R3(R3는 C1∼C8알킬기, 페닐기 또는 아릴알킬기를 나타내고, n은 0.1 또는 2를 나타낸다), -SO2NR4R5(R4는 C1∼C8알킬기를 나타내고, R5는 수소원자 또는 C1∼C8알킬기를 나타내든가, 또는 R8,R5가 함께 -(CH2)P-, -CH2CH2OCH2CH2- 또는 -CH2CH2N(CH3)CH2CH2-를 나타내며, 단, P는 4,5 또는 6을 나타낸다), 또는 C1∼C8알킬기, 할로겐원자 또는 니트로기로 치환되어도 좋은 페닐기.
- E : 할로겐원자,
- G : H, Cl, Br, C1∼C4알킬, -CF3, 메톡시메틸 또는 메톡시에틸.
- Z : 질소원자 또는 C-R8(R8은 수소원자, 할로겐화알킬기 또는 X나 Y의 어느 것과 함께 산소원자를 포함하는 5원환 구조를 형성한다.)이다.
- 청구범위 1항에서 정의된 일반식(의) 피라졸술폰아미드 유도체를 활성성분으로 함유하는 것을 특징으로 하는, 제초제 조성물.
- 청구범위 1항에서 정의한 일반식(Ⅰ)인 화합물의 유효량을 보호될 지역에 시용(施用)하는 것을 특징으로 하여, 부적당한 초목의 생장을 억제하는 방법.
- ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3137782A JPS58148879A (ja) | 1982-02-27 | 1982-02-27 | ピラゾ−ルスルホニルウレア誘導体、その製造法および該誘導体を含有する除草剤 |
JP57-31377 | 1982-02-27 | ||
JP14206982A JPS5931775A (ja) | 1982-08-18 | 1982-08-18 | ピラゾールスルホニルウレア誘導体および除草剤 |
JP57-142069 | 1982-08-18 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890000594 Division | 1989-01-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR840003629A true KR840003629A (ko) | 1984-09-15 |
KR890000728B1 KR890000728B1 (ko) | 1989-03-30 |
Family
ID=26369825
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019830000788A KR890000728B1 (ko) | 1982-02-27 | 1983-02-26 | 피라졸술포닐우레아 유도체의 제조방법 |
KR1019890000594D KR890001546B1 (ko) | 1982-02-27 | 1983-02-26 | 피라졸 술폰아미드 유도체의 제조방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890000594D KR890001546B1 (ko) | 1982-02-27 | 1983-02-26 | 피라졸 술폰아미드 유도체의 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4954164A (ko) |
EP (1) | EP0087780B2 (ko) |
KR (2) | KR890000728B1 (ko) |
AU (1) | AU614485B2 (ko) |
BR (1) | BR8300975A (ko) |
DE (1) | DE3382437D1 (ko) |
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CS315491A3 (en) * | 1990-10-19 | 1992-05-13 | Ici Australia Operations | Derivatives of sulfonyl urea, process of their preparation and herbicidal compositions containing said derivatives |
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DE3330602A1 (de) * | 1983-08-25 | 1985-03-21 | Hoechst Ag, 6230 Frankfurt | Neue pyrazolyl- und isoxazolylsulfonylharnstoffe |
-
1983
- 1983-02-24 US US06/469,458 patent/US4954164A/en not_active Expired - Lifetime
- 1983-02-24 AU AU11811/83A patent/AU614485B2/en not_active Expired
- 1983-02-25 EP EP83101870A patent/EP0087780B2/en not_active Expired - Lifetime
- 1983-02-25 DE DE8383101870T patent/DE3382437D1/de not_active Expired - Lifetime
- 1983-02-26 KR KR1019830000788A patent/KR890000728B1/ko not_active IP Right Cessation
- 1983-02-26 KR KR1019890000594D patent/KR890001546B1/ko active
- 1983-02-28 BR BR8300975A patent/BR8300975A/pt not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0087780A2 (en) | 1983-09-07 |
AU614485B2 (en) | 1991-09-05 |
KR890000728B1 (ko) | 1989-03-30 |
DE3382437D1 (de) | 1991-11-28 |
KR890001546B1 (ko) | 1989-05-08 |
AU1181183A (en) | 1983-09-01 |
EP0087780B2 (en) | 1995-02-15 |
US4954164A (en) | 1990-09-04 |
BR8300975A (pt) | 1983-11-16 |
EP0087780B1 (en) | 1991-10-23 |
EP0087780A3 (en) | 1984-05-30 |
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