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KR830010402A - 감광성 중합체 조성물 - Google Patents

감광성 중합체 조성물 Download PDF

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Publication number
KR830010402A
KR830010402A KR1019820001615A KR820001615A KR830010402A KR 830010402 A KR830010402 A KR 830010402A KR 1019820001615 A KR1019820001615 A KR 1019820001615A KR 820001615 A KR820001615 A KR 820001615A KR 830010402 A KR830010402 A KR 830010402A
Authority
KR
South Korea
Prior art keywords
amine compound
polymer composition
photosensitive polymer
weight
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019820001615A
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English (en)
Other versions
KR860000071B1 (ko
Inventor
후미오 가다오까
소지후사지
이사오 오바라
잇세이 다께모도
히또시 요꼬노
도끼오 이소가이
미쯔마사 고지마
Original Assignee
미다 가쓰시게루
가부시기 가이샤 히다찌 세이사꾸쇼
다까기 다다시
히다찌 가세이 고교 가부시기 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미다 가쓰시게루, 가부시기 가이샤 히다찌 세이사꾸쇼, 다까기 다다시, 히다찌 가세이 고교 가부시기 가이샤 filed Critical 미다 가쓰시게루
Publication of KR830010402A publication Critical patent/KR830010402A/ko
Application granted granted Critical
Publication of KR860000071B1 publication Critical patent/KR860000071B1/ko
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/47—Organic layers, e.g. photoresist
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/128—Radiation-activated cross-linking agent containing

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Macromonomer-Based Addition Polymer (AREA)

Abstract

내용 없음

Description

감광성 중합체 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (1)

  1. (a)폴리아미드산 100중량부와, (b)비스아지도 0.1~100중량부와, (c)분자중에 3급 탄소와 그것에 결합한 수소로 이루어진 기를 함유하는 아민화합물, 2급 탄소와 그것에 결합한 수소로 이루어지는 기를 함유하는 아민화합, 물분자중에 불포화 결합을 갖는 아민화합물 중에서 선택된 한종류의 아민화합물 1~400중량부와, (d)필요에 따라 가하는 증감제로 이루어진 것을 특징으로 하는 감광성 중합체조성물
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8201615A 1981-04-13 1982-04-13 감광성 중합체 조성물 Expired KR860000071B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP56054408A JPS57168942A (en) 1981-04-13 1981-04-13 Photosensitive polymer composition
JP54408 1981-04-13
JP81-54408 1981-04-13

Publications (2)

Publication Number Publication Date
KR830010402A true KR830010402A (ko) 1983-12-30
KR860000071B1 KR860000071B1 (ko) 1986-02-06

Family

ID=12969869

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8201615A Expired KR860000071B1 (ko) 1981-04-13 1982-04-13 감광성 중합체 조성물

Country Status (5)

Country Link
US (1) US4565767A (ko)
EP (1) EP0065352B1 (ko)
JP (1) JPS57168942A (ko)
KR (1) KR860000071B1 (ko)
DE (1) DE3268753D1 (ko)

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JPS57170929A (en) * 1982-03-19 1982-10-21 Hitachi Ltd Photosensitive polymeric composition
EP0092524B1 (de) * 1982-04-21 1987-08-12 Ciba-Geigy Ag Strahlungsempfindliches Beschichtungsmittel und seine Verwendung
DE3234301A1 (de) * 1982-09-16 1984-03-22 Merck Patent Gmbh, 6100 Darmstadt Neue bisazidoverbindungen, diese enthaltende lichtempfindliche zusammensetzungen und verfahren zur erzeugung von reliefstrukturen
US4548891A (en) * 1983-02-11 1985-10-22 Ciba Geigy Corporation Photopolymerizable compositions containing prepolymers with olefin double bonds and titanium metallocene photoinitiators
DE3463576D1 (en) * 1983-03-03 1987-06-11 Toray Industries Radiation sensitive polymer composition
JPS59160139A (ja) * 1983-03-04 1984-09-10 Hitachi Ltd 感光性重合体組成物
JPS6042425A (ja) * 1983-08-17 1985-03-06 Toray Ind Inc 化学線感応性重合体組成物
US4515887A (en) * 1983-08-29 1985-05-07 General Electric Company Photopatternable dielectric compositions, method for making and use
US4656116A (en) * 1983-10-12 1987-04-07 Ciba-Geigy Corporation Radiation-sensitive coating composition
US4578328A (en) * 1984-07-09 1986-03-25 General Electric Company Photopatternable polyimide compositions and method for making
US4741988A (en) * 1985-05-08 1988-05-03 U.S. Philips Corp. Patterned polyimide film, a photosensitive polyamide acid derivative and an electrophoretic image-display cell
JPH0798900B2 (ja) * 1986-05-14 1995-10-25 日立化成工業株式会社 感光性重合体組成物
US4830953A (en) * 1986-08-18 1989-05-16 Ciba-Geigy Corporation Radiation-sensitive coating composition with polyazide and polyimide and process of photo-crosslinking the coating
JP2559720B2 (ja) * 1986-12-19 1996-12-04 株式会社日立製作所 感光性重合体組成物
US4782009A (en) * 1987-04-03 1988-11-01 General Electric Company Method of coating and imaging photopatternable silicone polyamic acid
US4803147A (en) * 1987-11-24 1989-02-07 Hoechst Celanese Corporation Photosensitive polyimide polymer compositions
DE3808927A1 (de) * 1988-03-17 1989-10-05 Ciba Geigy Ag Negativ-fotoresists von polyimid-typ mit 1,2-disulfonen
JP2626696B2 (ja) * 1988-04-11 1997-07-02 チッソ株式会社 感光性重合体
US4908096A (en) * 1988-06-24 1990-03-13 Allied-Signal Inc. Photodefinable interlevel dielectrics
JP2906637B2 (ja) 1989-10-27 1999-06-21 日産化学工業株式会社 ポジ型感光性ポリイミド樹脂組成物
EP0431971B1 (en) * 1989-12-07 1995-07-19 Kabushiki Kaisha Toshiba Photosensitive composition and resin-encapsulated semiconductor device
US5173542A (en) * 1989-12-08 1992-12-22 Raychem Corporation Bistriazene compounds and polymeric compositions crosslinked therewith
US5270453A (en) * 1989-12-08 1993-12-14 Raychem Corporation Aromatic bistriazene compounds
EP0450189B1 (de) * 1990-03-29 1996-10-30 Siemens Aktiengesellschaft Hochwärmebeständige Negativresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen
US6045975A (en) * 1990-04-16 2000-04-04 Fujitsu Limited Photosensitive, heat-resistant resin composition for forming patterns
US5851736A (en) * 1991-03-05 1998-12-22 Nitto Denko Corporation Heat-resistant photoresist composition, photosensitive substrate, and process for forming heat-resistant positive or negative pattern
JP2814442B2 (ja) * 1991-10-25 1998-10-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 感光性ポリイミドプリカーサー組成物
WO1993012055A2 (en) * 1991-12-10 1993-06-24 The Dow Chemical Company Photocurable cyclobutarene compositions
US5472823A (en) * 1992-01-20 1995-12-05 Hitachi Chemical Co., Ltd. Photosensitive resin composition
US5614354A (en) * 1993-02-03 1997-03-25 Toray Industries, Inc. Method of forming positive polyimide patterns
JP3687988B2 (ja) * 1993-09-03 2005-08-24 日立化成工業株式会社 ｉ線ステッパ用感光性樹脂組成物
TWI249650B (en) * 1997-05-16 2006-02-21 Toray Industries Actinic radiation sensitive polymer composition and method of preparing a polyimide precursor composition for an actinic radiation sensitive polymer composition
US6677099B1 (en) 1999-11-30 2004-01-13 Nissan Chemical Industries, Ltd. Positive type photosensitive polyimide resin composition
JP4390028B2 (ja) 2000-10-04 2009-12-24 日産化学工業株式会社 ポジ型感光性ポリイミド樹脂組成物
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JPS5952822B2 (ja) * 1978-04-14 1984-12-21 東レ株式会社 耐熱性感光材料
DE2967162D1 (en) * 1978-09-29 1984-09-13 Hitachi Ltd Light-sensitive polymer composition
JPS5624344A (en) * 1979-08-06 1981-03-07 Hitachi Ltd Photosensitive heat-resistant polymer composition
DE2933827A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung.
JPS5664335A (en) * 1979-10-29 1981-06-01 Fuji Photo Film Co Ltd Photosensitive composition
GB2092164B (en) * 1980-12-17 1984-12-05 Hitachi Ltd Loght or radiation-sensitive polymer composition

Also Published As

Publication number Publication date
EP0065352A3 (en) 1983-07-20
EP0065352B1 (en) 1986-01-29
KR860000071B1 (ko) 1986-02-06
EP0065352A2 (en) 1982-11-24
DE3268753D1 (en) 1986-03-13
JPS57168942A (en) 1982-10-18
US4565767A (en) 1986-01-21

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